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    METHOD TO DEFINE MULTIPLE LAYER PATTERNS USING DOUBLE EXPOSURES
    61.
    发明申请
    METHOD TO DEFINE MULTIPLE LAYER PATTERNS USING DOUBLE EXPOSURES 有权
    使用双重曝光定义多层图案的方法

    公开(公告)号：US20170052445A1

    公开(公告)日：2017-02-23

    申请号：US14832931

    申请日：2015-08-21

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Ming-Huei Weng ,  Ching-Yu Chang ,  Chun-Kuang Chen

    IPC: G03F7/00 ,  G03F7/32 ,  G03F7/38 ,  G03F7/20

    CPC classification number: G03F7/0035 ,  G03F7/091 ,  G03F7/095 ,  G03F7/11 ,  G03F7/2022 ,  G03F7/203 ,  G03F7/32 ,  G03F7/38

    Abstract: A method of fabricating a semiconductor device includes forming a first photoresist layer over a substrate, over which a protective layer material is deposited to form a protective layer. A second photoresist layer is formed over the protective layer. A first lithography exposure process is performed, through a first mask, to expose the first and second photoresist layers, and to form a bottom latent pattern. A second lithography exposure process is performed, through a second mask, to expose the first and second photoresist layers, and to form a top latent pattern, where the top latent pattern at least partially overlaps the bottom latent pattern. The first and second photoresist layers and the protective layer are developed to form a first main feature and a second main feature from the bottom and top latent patterns respectively, and an opening in the protective layer vertically aligned with the second main feature.

    Abstract translation: 制造半导体器件的方法包括在衬底上形成第一光致抗蚀剂层，在其上沉积保护层材料以形成保护层。 在保护层上形成第二光致抗蚀剂层。 通过第一掩模执行第一光刻曝光工艺以暴露第一和第二光致抗蚀剂层，并形成底部潜图案。 通过第二掩模执行第二光刻曝光工艺以暴露第一和第二光致抗蚀剂层，并且形成顶部潜图案，其中顶部潜图案至少部分地与底部潜图案重叠。 显影第一和第二光致抗蚀剂层和保护层以分别从底部和顶部潜像形成第一主要特征和第二主要特征，以及与第二主要特征垂直对齐的保护层中的开口。

    Method of preparing and using photosensitive material
    63.
    发明授权
    Method of preparing and using photosensitive material 有权
    制备和使用感光材料的方法

    公开(公告)号：US09529265B2

    公开(公告)日：2016-12-27

    申请号：US14310656

    申请日：2014-06-20

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： An-Ren Zi ,  Chen-Hau Wu ,  Ching-Yu Chang

    IPC: G03F7/26 ,  G03F7/32 ,  G03F7/039 ,  G03F7/30 ,  G03F7/004 ,  G03F7/038 ,  G03F7/11 ,  G03F7/20

    CPC classification number: G03F7/322 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/30

    Abstract: Provided in one embodiment is a method that includes selecting a photoresist that is one of a positive-tone photoresist and a negative-tone photoresist. A first additive or a second additive is selected based on the photoresist. The first additive has a fluorine component and a base component attached to a polymer and is selected if the a positive-tone resist is provided. The second additive has the fluorine component and an acid component attached to the polymer and is selected with a negative-tone resist is provided. The selected photoresist and the selected additive material are applied to a target substrate.

    Abstract translation: 在一个实施方案中提供了一种方法，其包括选择作为正色调光致抗蚀剂和负色光致抗蚀剂之一的光致抗蚀剂。 基于光致抗蚀剂选择第​​一添加剂或第二添加剂。 第一添加剂具有氟成分和连接到聚合物上的基础成分，并且如果提供正性抗蚀剂则被选择。 第二添加剂具有氟成分，并且附着在聚合物上的酸成分并且被提供为负色调抗蚀剂。 将所选择的光致抗蚀剂和所选择的添加剂材料施加到目标基底。

    Method and Apparatus for Planarization of Substrate Coatings
    66.
    发明申请
    Method and Apparatus for Planarization of Substrate Coatings 审中-公开
    基材涂层平面化方法与装置

    公开(公告)号：US20160260623A1

    公开(公告)日：2016-09-08

    申请号：US15153593

    申请日：2016-05-12

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Wen-Yun Wang ,  Cheng-Han Wu ,  Yu-Chung Su ,  Ching-Yu Chang

    IPC: H01L21/67 ,  H01L21/02 ,  G03F7/16 ,  B05B13/02 ,  B05B12/02 ,  H01L21/3105 ,  H01L21/027

    CPC classification number: H01L21/67063 ,  B05B12/02 ,  B05B13/0228 ,  B05D1/005 ,  G03F7/162 ,  H01L21/02282 ,  H01L21/0273 ,  H01L21/31051 ,  H01L21/31055 ,  H01L21/31058 ,  H01L21/67028 ,  H01L21/6715

    Abstract: A system for forming a coating comprises applying a first coating to a substrate having a plurality of topographical features, planarizing a top surface of the first coating, and drying the first coating after planarizing the top surface. The first coating may be applied over the plurality of topographical features, and may be substantially liquid during application. The first coating may optionally be a conformal coating over topographical features of the substrate. The conformal coating may be dried prior to planarizing the top surface of the first coating. A solvent may be applied to the conformal coating, with the top surface of the conformal coating being substantially planar after application of the solvent. The first coating may have a planar surface prior to drying the first coating, and the first coating may be dried without substantial spin-drying by modifying an environment of the first coating.

    Abstract translation: 用于形成涂层的系统包括将第一涂层施加到具有多个形貌特征的基底，平面化第一涂​​层的顶表面，以及在平坦化顶表面之后干燥第一涂层。 第一涂层可以施加在多个形貌特征上，并且在施加期间可以是基本上液体的。 第一涂层可以任选地是基底的形貌特征上的保形涂层。 可以在使第一涂层的顶表面平坦化之前干燥保形涂层。 可以将溶剂施加到保形涂层，在施加溶剂之后，保形涂层的顶表面基本上是平面的。 第一涂层可以在干燥第一涂层之前具有平坦表面，并且可以通过改变第一涂层的环境来干燥第一涂层而无需实质的旋转干燥。

    Patterning process and chemical amplified photoresist composition
    67.
    发明授权
    Patterning process and chemical amplified photoresist composition 有权
    图案化工艺和化学放大光致抗蚀剂组合物

    公开(公告)号：US09389510B2

    公开(公告)日：2016-07-12

    申请号：US14080430

    申请日：2013-11-14

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Chien-Wei Wang ,  Ching-Yu Chang

    IPC: G03F7/095 ,  G03F7/038 ,  G03F7/039 ,  G03F7/004 ,  G03F7/20 ,  G03F7/30 ,  G03F7/32 ,  G03F7/38 ,  G03F7/11

    CPC classification number: G03F7/095 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/30 ,  G03F7/322 ,  G03F7/38

    Abstract: A lithography method includes forming a photosensitive layer on a substrate, exposing the photosensitive layer, baking the photosensitive layer, and developing the exposed photosensitive layer. The photosensitive layer includes a polymer that turns soluble to a base solution in response to reaction with acid, a plurality of photo—acid generators (PAGs) that decompose to form acid in response to radiation energy, and a plurality of quenchers having boiling points distributed between about 200 C and about 350 C. The quenchers also have molecular weights distributed between 300 Dalton and about 20000 Dalton, and are vertically distributed in the photosensitive layer such that a first concentration C1 at a top portion of the photosensitive layer is greater than a second concentration C2 at a bottom portion of the photosensitive layer.

    Abstract translation: 光刻方法包括在基板上形成感光层，曝光感光层，烘烤感光层，以及显影曝光的感光层。 感光层包括响应于与酸的反应而变成可溶于碱溶液的聚合物，响应于辐射能而分解形成酸的多个光酸发生剂（PAG），和多个具有沸点分布的猝灭剂 约200℃至约350℃。猝灭剂还具有分布在300道尔顿和约20000道尔顿之间的分子量，并且垂直分布在感光层中，使得感光层顶部的第一浓度C1大于 在感光层的底部具有第二浓度C2。

    Lithography Patterning Technique
    68.
    发明申请
    Lithography Patterning Technique 有权
    平版印刷图案技术

    公开(公告)号：US20160124310A1

    公开(公告)日：2016-05-05

    申请号：US14529944

    申请日：2014-10-31

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Chang Lilin ,  Ching-Yu Chang

    IPC: G03F7/32 ,  G03F7/20

    CPC classification number: G03F7/322 ,  G03F7/20

    Abstract: A method for lithography patterning includes providing a substrate; forming a material layer over the substrate; exposing the material layer to a radiation, resulting in an exposed material layer; and removing a portion of the exposed material layer in a developer, resulting in a patterned material layer. The developer is an alkaline aqueous solution having an organic base that is a quaternary ammonium hydroxide. In an embodiment, the organic base has a bulky group in its side chain, reducing its etching distance. In another embodiment, the organic base includes electron withdrawing groups, reducing its basicity. In yet another embodiment, the developer has a loading of the quaternary ammine ranging from about 0.01% to about 2.37%. The developer results in reduced line edge roughness and reduced line width roughness in the patterned material layer.

    Abstract translation: 一种用于光刻图案化的方法包括提供衬底; 在衬底上形成材料层; 将材料层暴露于辐射，产生暴露的材料层; 并且在显影剂中除去暴露的材料层的一部分，得到图案化的材料层。 显影剂是具有作为季铵氢氧化物的有机碱的碱性水溶液。 在一个实施方案中，有机碱在其侧链中具有大体积基团，从而减少其蚀刻距离。 在另一个实施方案中，有机碱包括吸电子基团，降低其碱度。 在另一个实施方案中，显影剂具有约0.01％至约2.37％的季铵的负载。 显影剂导致图案化材料层中的线边缘粗糙度降低和线宽粗糙度降低。

    Cut-Mask Patterning Process for FIN-Like Field Effect Transistor (FINFET) Device
    69.
    发明申请
    Cut-Mask Patterning Process for FIN-Like Field Effect Transistor (FINFET) Device 有权
    FIN型场效应晶体管（FINFET）器件的切割掩模图案化处理

    公开(公告)号：US20160124300A1

    公开(公告)日：2016-05-05

    申请号：US14991233

    申请日：2016-01-08

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Wei-De Ho ,  Ching-Yu Chang ,  Kuei-Liang Lu ,  Ming-Feng Shieh

    IPC: G03F1/38

    CPC classification number: G03F1/38 ,  G03F7/70466 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/845 ,  H01L27/1211

    Abstract: Disclosed is a mask for use in a lithography system having a defined resolution. The mask comprises first and second patterns that are greater than the defined resolution and a sub-resolution feature that is less than the defined resolution. Portions of the first and second patterns are positioned close to each other and separated by the sub-resolution feature in an intersection area. The size and shape of the sub-resolution feature are such that when the mask is used in the lithography system, a resulting pattern includes the first and second patterns interconnected with each other through the interconnection area.

    Abstract translation: 公开了一种用于具有确定分辨率的光刻系统中的掩模。 该掩模包括大于所定义的分辨率的第一和第二图案以及小于定义的分辨率的子分辨率特征。 第一和第二图案的部分彼此靠近并且在交叉区域中被子分辨率特征隔开。 子分辨率特征的尺寸和形状使得当在光刻系统中使用掩模时，所得到的图案包括通过互连区域彼此互连的第一和第二图案。

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