公开(公告)号：US07233022B2

公开(公告)日：2007-06-19

申请号：US10980838

申请日：2004-11-04

申请人： Kyung-bae Park ,  Takashi Noguchi ,  Se-young Cho ,  Do-young Kim ,  Jang-yeon Kwon

发明人： Kyung-bae Park ,  Takashi Noguchi ,  Se-young Cho ,  Do-young Kim ,  Jang-yeon Kwon

IPC分类号： H01L29/10

CPC分类号： H01L29/66757 ,  H01L29/78603 ,  H01L29/78606

摘要： In a method of forming a polysilicon film, a thin film transistor including a polysilicon film, and a method of manufacturing a thin film transistor including a polysilicon film, the thin film transistor includes a substrate, a first heat conduction film on the substrate, a second heat conduction film adjacent to the first heat conduction film, the second heat conduction film having a lower thermal conductivity than the first heat conduction film, a polysilicon film on the second heat conduction film and the first heat conduction film adjacent to the second heat conduction film, and a gate stack on the polysilicon film. The second heat conduction film may either be on the first heat conduction film or, alternatively, the first heat conduction film may be non-contiguous and the second heat conduction film may be interposed between portions of the non-contiguous first heat conduction film.

摘要翻译： 在形成多晶硅膜的方法中，包括多晶硅膜的薄膜晶体管和包括多晶硅膜的薄膜晶体管的制造方法，薄膜晶体管包括基板，基板上的第一导热膜， 与所述第一导热膜相邻的所述第二导热膜，所述第二导热膜的热导率低于所述第一导热膜，所述第二导热膜上的多晶硅膜和与所述第二导热膜相邻的所述第一导热膜 膜和多晶硅膜上的栅极堆叠。 第二导热膜可以在第一导热膜上，或者第一导热膜可以不连续，并且第二导热膜可以介于不连续的第一导热膜的部分之间。

公开(公告)号：US20070048983A1

公开(公告)日：2007-03-01

申请号：US11498693

申请日：2006-08-03

申请人： Do-Young Kim ,  Jong-man Kim ,  Ji-sim Jung ,  Takashi Noguchi ,  Jang-yeon Kwon

发明人： Do-Young Kim ,  Jong-man Kim ,  Ji-sim Jung ,  Takashi Noguchi ,  Jang-yeon Kwon

IPC分类号： H01L21/265

CPC分类号： H01L21/02381 ,  C23C14/165 ,  C23C14/5813 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02631

摘要： A method of fabricating a high-quality silicon thin layer includes making Xe ions generated by RF power collide with a silicon target material layer to generate silicon particles from the silicon target material layer; and depositing the silicon particles on a predetermined substrate. The method is performed under a pressure of about 5 mTorr or lower and at an RF power of about 200 W or more. In this method, the silicon thin layer is thermally stabilized, and the amount of gas captured in silicon crystals during the sputtering process is greatly reduced.

摘要翻译： 制造高质量硅薄层的方法包括使由RF功率产生的Xe离子与硅靶材料层碰撞，从硅靶材料层产生硅颗粒; 并将硅颗粒沉积在预定的衬底上。 该方法在约5mTorr或更低的压力和约200W或更高的RF功率下进行。 在该方法中，硅薄层被热稳定化，并且溅射过程中在硅晶体中捕获的气体量大大降低。

公开(公告)号：US20070048912A1

公开(公告)日：2007-03-01

申请号：US11493182

申请日：2006-07-26

申请人： Takashi Noguchi ,  Wenxu Xianyu ,  Xiaoxin Zhang ,  Hans Cho ,  Kyung-bae Park

发明人： Takashi Noguchi ,  Wenxu Xianyu ,  Xiaoxin Zhang ,  Hans Cho ,  Kyung-bae Park

IPC分类号： H01L21/84

CPC分类号： H01L21/02639 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/02667 ,  H01L27/1281 ,  H01L29/66772

摘要： Provided are a method of forming a single crystalline silicon layer, a structure including the same, and method of fabricating a thin film transistor (“TFT”) using the same. The method of forming the single crystalline silicon layer includes forming a silicon nitride layer on a substrate, forming an insulating layer on the silicon nitride layer, forming a hole in the insulating layer to a predetermined dimension, depositing a first silicon layer on an exposed bottom of the hole using a selective deposition process, depositing a second silicon layer on the insulating layer and the first silicon layer formed in the hole, and crystallizing the second silicon layer using a thermal process. In this method, a high-quality single crystalline silicon layer can be obtained.

摘要翻译： 提供了形成单晶硅层的方法，包括其的结构，以及使用其制造薄膜晶体管（“TFT”）的方法。 形成单晶硅层的方法包括在衬底上形成氮化硅层，在氮化硅层上形成绝缘层，在绝缘层中形成预定尺寸的孔，在暴露的底部上沉积第一硅层 使用选择性沉积工艺，在绝缘层上沉积第二硅层和在孔中形成的第一硅层，并使用热处理使第二硅层结晶。 在该方法中，可以获得高品质的单晶硅层。

公开(公告)号：US07157344B2

公开(公告)日：2007-01-02

申请号：US10204386

申请日：2001-12-20

申请人： Hideo Yamagata ,  Takeyoshi Koumoto ,  Kenji Atsuumi ,  Yoichi Negoro ,  Tatsushiro Hirata ,  Takashi Noguchi

发明人： Hideo Yamagata ,  Takeyoshi Koumoto ,  Kenji Atsuumi ,  Yoichi Negoro ,  Tatsushiro Hirata ,  Takashi Noguchi

IPC分类号： H01L21/331

CPC分类号： H01L21/02505 ,  C30B25/02 ,  C30B29/52 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636 ,  H01L29/66242

摘要： In a vapor-phase growth method in which a silicon-germanium mixed crystal layer is deposited on a semiconductor substrate, the vapor-phase growth method comprises a first step of introducing silicon raw material gas into a reaction furnace in such a manner that a silicon raw material gas partial pressure increases in proportion to a time to thereby deposit a first semiconductor layer of a silicon layer on the semiconductor substrate under reduced pressure, a second step of introducing silicon raw material gas and germanium raw material gas into the reaction furnace in such a manner that a desired germanium concentration may be obtained to thereby deposit a second semiconductor layer of a silicon-germanium mixed crystal layer on the first semiconductor layer under reduced pressure and a third step of introducing silicon raw material gas into the reaction furnace under reduced pressure to thereby deposit a third semiconductor layer of a silicon layer on the second semiconductor layer. Thus, there can be obtained a semiconductor layer in which a misfit dislocation can be improved.

公开(公告)号：US20060177638A1

公开(公告)日：2006-08-10

申请号：US11348235

申请日：2006-02-07

申请人： Munehiro Shibuya ,  Takashi Noguchi ,  Toshihito Kanai

发明人： Munehiro Shibuya ,  Takashi Noguchi ,  Toshihito Kanai

IPC分类号： B32B7/02

CPC分类号： G02B1/14 ,  C23C14/0021 ,  G02B1/105 ,  G02B1/115 ,  Y02T50/67 ,  Y10T428/24942

摘要： A method for manufacturing a plastic optical component having an optical multilayer film. The optical multilayer film has a low refractive index layer and a high refractive index layer, and a layer containing titanate of a rare earth element is formed in a vacuum atmosphere at pressure more than 1×10−4 Pa and less than 1×10−2 Pa as the high refractive index layer of the optical multilayer film.

摘要翻译： 一种具有光学多层膜的塑料光学部件的制造方法。 该光学多层膜具有低折射率层和高折射率层，并且在超过1×10 -4 Pa或更低的压力的真空气氛中形成包含稀土元素的钛酸盐层 超过1×10 -2 Pa作为光学多层膜的高折射率层。

公开(公告)号：US07078265B2

公开(公告)日：2006-07-18

申请号：US10717934

申请日：2003-11-21

申请人： Makoto Terui ,  Yasuo Tanaka ,  Takashi Noguchi

发明人： Makoto Terui ,  Yasuo Tanaka ,  Takashi Noguchi

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC分类号： H01L21/568 ,  H01L21/561 ,  H01L21/6835 ,  H01L23/3114 ,  H01L23/3677 ,  H01L23/3733 ,  H01L24/27 ,  H01L24/81 ,  H01L29/0657 ,  H01L2224/04026 ,  H01L2224/274 ,  H01L2224/73253 ,  H01L2224/81801 ,  H01L2924/01029 ,  H01L2924/10158 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/00

摘要： A fabricating method for a semiconductor device includes forming a heat spreading material on rear surface of the semiconductor wafer. The semiconductor wafer has a plurality of device areas and scribe lines which are arranged between the device areas. After the heat spreading material is formed on rear surface of the semiconductor wafer, the semiconductor wafer is separated at the scribe lines.

摘要翻译： 一种半导体器件的制造方法包括在半导体晶片的后表面上形成散热材料。 半导体晶片具有布置在器件区域之间的多个器件区域和划线。 在半导体晶片的后表面上形成散热材料之后，半导体晶片在划线处被分离。

公开(公告)号：US20060144323A1

公开(公告)日：2006-07-06

申请号：US11311228

申请日：2005-12-20

申请人： Wenxu Xianyu ,  Takashi Noguchi ,  Young-soo Park ,  Hans Cho ,  Huaxiang Yin

发明人： Wenxu Xianyu ,  Takashi Noguchi ,  Young-soo Park ,  Hans Cho ,  Huaxiang Yin

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： H01L21/26506 ,  H01L21/268 ,  H01L21/32134 ,  H01L21/76254 ,  H01L21/76256 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/66772

摘要： A method of fabricating a large substrate with a locally integrated single crystalline silicon layer is provided. The method includes: forming a buffer layer on a support plate; separately fabricating a single crystalline silicon layer; attaching the single crystalline silicon layer having a predetermined thickness, which is separately fabricated, to a predetermined portion in the support plate; forming a non-single crystalline silicon layer having a predetermined thickness to cover the single crystalline silicon layer and the buffer layer; and processing the non-single crystalline silicon layer to expose a surface of the non-single crystalline silicon layer and to level the surface of the non-single crystalline silicon layer with a surface of the amorphous silicon layer.

公开(公告)号：US20060134894A1

公开(公告)日：2006-06-22

申请号：US11283874

申请日：2005-11-22

申请人： Huaxiang Yin ,  Takashi Noguchi ,  Wenxu Xianyu ,  Kyung-bae Park

发明人： Huaxiang Yin ,  Takashi Noguchi ,  Wenxu Xianyu ,  Kyung-bae Park

IPC分类号： H01L21/84 ,  H01L21/20

CPC分类号： H01L21/02675 ,  H01L21/2026 ,  H01L21/84 ,  H01L27/11 ,  H01L27/1108 ,  H01L27/12 ,  H01L27/1281

摘要： A method of manufacturing a polycrystalline Si film and a method of manufacturing a stacked transistor are provided. The method of manufacturing the polycrystalline Si film includes preparing an insulating substrate on which is formed a transistor that includes a poly-Si active layer, a gate insulating layer, and a gate, sequentially formed, forming an interconnection metal line separated from the gate, forming an insulating layer that covers the transistor and the interconnection metal line, forming an amorphous silicon layer on the insulating layer; and annealing the amorphous silicon layer.

摘要翻译： 提供一种制造多晶Si膜的方法和制造堆叠晶体管的方法。 制造多晶Si膜的方法包括制备绝缘基板，其上形成有依次形成的多晶硅，具有多晶硅有源层，栅极绝缘层和栅极，形成与栅极分离的互连金属线， 形成覆盖晶体管和互连金属线的绝缘层，在绝缘层上形成非晶硅层; 并退火非晶硅层。

公开(公告)号：US20060099777A1

公开(公告)日：2006-05-11

申请号：US11270607

申请日：2005-11-10

申请人： Takashi Noguchi ,  Wenxu Xianyu

发明人： Takashi Noguchi ,  Wenxu Xianyu

IPC分类号： H01L21/20 ,  H01L21/30

CPC分类号： H01L27/1266 ,  H01L21/26506 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/66772

摘要： A method for forming a single-crystal silicon film of high quality is provided. The method includes the operations of: growing single-crystal silicon to a predetermined thickness of a crystal growth plate; depositing a buffer layer on the single-crystal silicon layer; forming a partition layer at a predetermined depth in the single-crystal silicon layer by implanting hydrogen ions in the single-crystal silicon layer from an upper portion of an insulating layer; attaching a substrate onto the buffer layer; and cutting the partition layer of the single-crystal silicon layer by heating the partition layer from the crystal growth plate to obtain a single-crystal silicon layer of a predetermined thickness on the substrate.

摘要翻译： 提供了一种形成高质量单晶硅膜的方法。 该方法包括以下操作：将单晶硅生长至预定厚度的晶体生长板; 在单晶硅层上沉积缓冲层; 通过从绝缘层的上部注入单晶硅层中的氢离子，在单晶硅层中形成预定深度的分隔层; 将衬底附着到缓冲层上; 以及通过从晶体生长板加热分隔层来切割单晶硅层的分隔层，以在基板上获得预定厚度的单晶硅层。

公开(公告)号：US20060068507A1

公开(公告)日：2006-03-30

申请号：US11233363

申请日：2005-09-23

申请人： Wenxu Xianyu ,  Takashi Noguchi ,  Hans Cho ,  Jang-Yeon Kwon ,  Huaxiang Yin

发明人： Wenxu Xianyu ,  Takashi Noguchi ,  Hans Cho ,  Jang-Yeon Kwon ,  Huaxiang Yin

IPC分类号： H01L21/00 ,  H01L21/8242

CPC分类号： H01L21/02356 ,  H01L21/02197 ,  H01L21/31691 ,  H01L21/84 ,  H01L27/11502 ,  H01L27/12

摘要： A method of forming a material (e.g., ferroelectric) film, a method of manufacturing a capacitor, and a method of forming a semiconductor memory device using the method of forming the (e.g., ferroelectric) film are provided. Pursuant to an example embodiment of the present invention, a method of forming a ferroelectric film includes preparing a substrate, depositing an amorphous ferroelectric film on the substrate, and crystallizing the amorphous ferroelectric film by irradiating it with a laser beam. According to still another example embodiment of the present invention, a method of forming a ferroelectric film may reduce the thermal damage to other elements because the ferroelectric film may be formed at a temperature lower than about 500° C. to about 550°C.

摘要翻译： 提供了形成材料（例如铁电体）膜的方法，制造电容器的方法，以及使用形成（例如铁电体）膜的方法形成半导体存储器件的方法。 根据本发明的示例性实施例，形成铁电体膜的方法包括制备基板，在基板上沉积非晶铁电体膜，并通过用激光束照射非晶强电介质膜使其结晶。 根据本发明的另一示例性实施例，形成铁电体膜的方法可以减少对其它元件的热损伤，因为铁电体膜可以在低于约500℃至约550℃的温度下形成。