Abstract:
This invention provides a treatment device for lowering electron affinity, said treatment device being capable of performing an EA surface treatment on a photocathode material or an EA surface retreatment on a photocathode, and an electron-beam device provided with said treatment device. An activation chamber (20) used in a treatment device for lowering electron affinity by vaporizing a surface-treatment material (30) and using the vaporized surface-treatment material (30) to perform an electron-affinity lowering treatment on a photocathode material (52) or an electron-affinity lowering retreatment on a photocathode (52), said activation chamber (20) being characterized by containing holes through which electrons can pass.
Abstract:
An electron microscope is disclosed which has a laser-driven photocathode and an arbitrary waveform generator (AWG) laser system (“laser”). The laser produces a train of temporally-shaped laser pulses each being of a programmable pulse duration, and directs the laser pulses to the laser-driven photocathode to produce a train of electron pulses. An image sensor is used along with a deflector subsystem. The deflector subsystem is arranged downstream of the target but upstream of the image sensor, and has a plurality of plates. A control system having a digital sequencer controls the laser and a plurality of switching components, synchronized with the laser, to independently control excitation of each one of the deflector plates. This allows each electron pulse to be directed to a different portion of the image sensor, as well as to enable programmable pulse durations and programmable inter-pulse spacings.
Abstract:
A scalable, integrated photoemitter device and method of manufacture using conventional CMOS manufacturing techniques. The photoemitter device has a first semiconductor substrate having a plurality of photonic sources formed on top in a first material layer, the plurality of photonic sources and the material layer forming a planar surface. A second substrate is bonded to the planar surface, the second substrate having a plurality of photoemitter structures formed on top in a second material layer, each photoemitter structure in alignment with a respective photonic source of the first substrate and configured to generate particle beams responsive to light from a respective light source. Additionally provided is a multi-level photoemitter of tapered design for implementation in the scalable, integrated photoemitter device. Conventional CMOS manufacturing techniques are also implemented to build the multi-level photoemitter of tapered design.
Abstract:
An electron microscope is provided. In another aspect, an electron microscope employs a radio frequency which acts upon electrons used to assist in imaging a specimen. Furthermore, another aspect provides an electron beam microscope with a time resolution of less than 1 picosecond with more than 105 electrons in a single shot or image group. Yet another aspect employs a super-cooled component in an electron microscope.
Abstract:
A gun configured to generate charged particles, comprising a ring-cathode (200) electrically configured to generate a charged particle beam; a lens arranged to focus the charged particle beam on a specimen; and at least one correction focusing electrode (1406) arranged to generate at least one electrostatic/magnetic field to further divergently/convergently focus the charged particle beam for correcting in-plane geometric aberrations associated with the lens, the focusing being based on the in-plane geometric aberrations associated with the lens. A related method is also disclosed.
Abstract:
An electron microscope is provided. In another aspect, an electron microscope employs a radio frequency which acts upon electrons used to assist in imaging a specimen. Furthermore, another aspect provides an electron beam microscope with a time resolution of less than 1 picosecond with more than 105 electrons in a single shot or image group. Yet another aspect employs a super-cooled component in an electron microscope.
Abstract:
A method suitable for preparing a specimen for inspection, the method comprising the steps of: irradiating a photocathode so that the photocathode emits electrons from a surface of the photocathode, wherein the emitted electrons each follow a trajectory, and the trajectories of the electrons are such that they can be extrapolated to intersect at a region within the photocathode, the region defining a virtual source, and wherein the photocathode comprises a rounded tip which has a radius of curvature; configuring the emitted electrons so that they form an electron beam; focusing the electron beam onto a specimen to form an image of the virtual source on the specimen. There is further provided a corresponding electron beam apparatus.
Abstract:
A method for aligning the axis of an atom beam with the orientation of an electric field at a particular location within an enclosure for use in creating a charged particle source by photoionizing a cold atom beam. The method includes providing an atom beam in the enclosure, providing a plurality of electrically conductive devices in said enclosure, evacuating the enclosure to a pressure below about 10−6 millibar, and aligning the axis of the atom beam with the orientation of the electric field, relative to each other, within less than about two degrees. Alignment may be facilitated by applying at least one voltage to the electrically conductive devices, mechanically tilting the atom beam's axis orientation of the electric field relative to each other and/or causing a deflection of the atom beam.
Abstract:
An electron beam inspection device observes a sample by irradiating the sample set on a stage with electron beams and detecting the electron beams from the sample. The electron beam inspection device has one electron column which irradiates the sample with the electron beams, and detects the electron beams from the sample. In this one electron column, a plurality of electron beam irradiation detecting systems are formed which each form electron beam paths in which the electron beams with which the sample is irradiated and the electron beams from the sample pass. The electron beam inspection device inspects the sample by simultaneously using a plurality of electron beam irradiation detecting systems and simultaneously irradiating the sample with the plurality of electron beams.
Abstract:
An embodiment includes an electron beam source system having a first electron beam source unit with a substrate having a substrate-top end and a substrate-bottom end; and a first lens coupled to the substrate-bottom end defining a first aperture and having a lens-top end and a lens-bottom end. Further embodiments comprise an electron-emission region at the substrate-bottom end and aligned with the first aperture, the electron-emission region being operable to emit one or more electrons due to one or more photons contacting the electron-emission region, which may include passing through the substrate and into the electron-emission region, wherein the electron-emission region comprises a first doped portion of the substrate.