公开(公告)号：US20170098722A1

公开(公告)日：2017-04-06

申请号：US15282482

申请日：2016-09-30

申请人： LG ELECTRONICS INC.

发明人： Jaewon CHANG ,  Jinsung KIM ,  Philwon YOON ,  Ilhyoung JUNG ,  Seunghun LEE ,  Seunghwan SHIM ,  Jinah KIM

IPC分类号： H01L31/0224 ,  H01L31/0236 ,  H01L31/02

CPC分类号： H01L31/022441 ,  H01L31/02008 ,  H01L31/02167 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/02363 ,  H01L31/032 ,  H01L31/074 ,  Y02E10/50

摘要： Disclosed is a solar cell including a semiconductor substrate including a semiconductor material, a tunneling layer disposed over one surface of the semiconductor substrate, a first conductive area and a second conductive area disposed over the tunneling layer and having opposite conductive types, and an electrode including a first electrode electrically connected to the first conductive area and a second electrode electrically connected to the second conductive area. At least one of the first conductive area and the second conductive area is configured as a metal compound layer.

公开(公告)号：US09608156B2

公开(公告)日：2017-03-28

申请号：US14795461

申请日：2015-07-09

申请人： SolAero Technologies Corp.

发明人： Marvin B. Clevenger ,  Benjamin C. Richards ,  Cory Tourino

IPC分类号： H01L21/00 ,  H01L31/0725 ,  H01L31/041 ,  H01L31/0735 ,  H01L31/048 ,  H01L31/0304 ,  H01L31/074 ,  H01L31/18 ,  H01L31/049

CPC分类号： H01L31/0725 ,  H01L31/03046 ,  H01L31/041 ,  H01L31/048 ,  H01L31/049 ,  H01L31/0508 ,  H01L31/0735 ,  H01L31/074 ,  H01L31/18 ,  Y02E10/544 ,  Y02P70/521

摘要： The present disclosure provides a method of fabricating a solar cell panel in an automated process by applying an adhesive pattern to a support, positioning a solar cell assembly over the pattern, and applying pressure to adhere the assembly to the support.

公开(公告)号：US09548409B2

公开(公告)日：2017-01-17

申请号：US14459062

申请日：2014-08-13

申请人： SunPower Corporation

发明人： Peter John Cousins

IPC分类号： H01L31/028 ,  H01L31/0392 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/0224 ,  H01L31/0376 ,  H01L31/068 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/074

CPC分类号： H01L31/02008 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/02366 ,  H01L31/03682 ,  H01L31/03762 ,  H01L31/03921 ,  H01L31/068 ,  H01L31/074 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/50 ,  Y02E10/548 ,  Y02P70/521

摘要： A silicon solar cell has doped amorphous silicon contacts formed on a tunnel silicon oxide layer on a surface of a silicon substrate. High temperature processing is unnecessary in fabricating the solar cell.

摘要翻译： 硅太阳能电池已经在硅衬底的表面上形成在隧道氧化硅层上的掺杂非晶硅接触。 制造太阳能电池时不需要高温处理。

公开(公告)号：US20160276515A1

公开(公告)日：2016-09-22

申请号：US15071923

申请日：2016-03-16

申请人： LG ELECTRONICS INC.

发明人： Jaewon CHANG ,  Ilhyoung JUNG ,  Jinah KIM ,  Hyunjung PARK ,  Seunghwan SHIM

IPC分类号： H01L31/062 ,  H01L31/0224

CPC分类号： H01L31/062 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/032 ,  H01L31/074 ,  Y02E10/50

摘要： Disclosed is a solar cell including a semiconductor substrate, a first conductive area disposed on one surface of the semiconductor substrate, the first conductive area being of a first conductive type, a second conductive area of a second conductive type opposite to the first conductive type, a first electrode connected to the first conductive area, and a second electrode connected to the second conductive area. At least one of the first conductive area and the second conductive area is formed of a metal compound layer.

摘要翻译： 公开了一种太阳能电池，包括半导体衬底，设置在半导体衬底的一个表面上的第一导电区域，第一导电区域，第一导电类型，与第一导电类型相反的第二导电类型的第二导电区域， 连接到第一导电区域的第一电极和连接到第二导电区域的第二电极。 第一导电区域和第二导电区域中的至少一个由金属化合物层形成。

公开(公告)号：US20160133773A1

公开(公告)日：2016-05-12

申请号：US14997564

申请日：2016-01-17

申请人： AZUR SPACE Solar Power GMBH

发明人： Matthias MEUSEL ,  Gerhard STROBL ,  Frank DIMROTH ,  Andreas BETT

IPC分类号： H01L31/054 ,  H01L31/0304 ,  H01L31/0687 ,  H01L31/047

CPC分类号： H01L31/0725 ,  H01L31/02168 ,  H01L31/02327 ,  H01L31/03046 ,  H01L31/047 ,  H01L31/052 ,  H01L31/0547 ,  H01L31/056 ,  H01L31/0687 ,  H01L31/0735 ,  H01L31/074 ,  Y02E10/52 ,  Y02E10/544

摘要： A monolithic multiple solar cell includes at least three partial cells, with a semiconductor mirror placed between two partial cells. The aim of the invention is to improve the radiation stability of said solar cell. For this purpose, the semiconductor mirror has a high degree of reflection in at least one part of a spectral absorption area of the partial cell which is arranged above the semiconductor mirror and a high degree of transmission within the spectral absorption range of the partial cell arranged below the semiconductor mirror.

摘要翻译： 单片多重太阳能电池包括至少三个部分电池，半导体镜放置在两个部分电池之间。 本发明的目的是提高所述太阳能电池的辐射稳定性。 为此目的，半导体镜在部分单元的光谱吸收区域的至少一部分中具有高度反射，该区域单元布置在半导体反射镜上方，并且在部分单元的光谱吸收范围内的高透射率被布置 半导体镜下方。

公开(公告)号：US20160118525A1

公开(公告)日：2016-04-28

申请号：US14982991

申请日：2015-12-29

申请人： International Business Machines Corporation

发明人： Stephen W. Bedell ,  Bahman Hekmatshoartabari ,  Devendra K. Sadana ,  Davood Shahrjerdi

IPC分类号： H01L31/074 ,  H01L31/0216 ,  H01L31/0224

CPC分类号： H01L31/074 ,  H01L31/02167 ,  H01L31/022466 ,  H01L31/0304 ,  H01L31/036 ,  H01L31/077 ,  H01L31/20 ,  Y02E10/50 ,  Y02E10/544 ,  Y02P70/521

摘要： Solar cell structures that have improved carrier collection efficiencies at a heterointerface are provided by low temperature epitaxial growth of silicon on a III-V base. Additionally, a solar cell structure having improved open circuit voltage includes a shallow junction III-V emitter formed by epitaxy or diffusion followed by the epitaxy of SixGe1−x passivated by amorphous SiyGe1−y:H.

公开(公告)号：US20160087138A1

公开(公告)日：2016-03-24

申请号：US14954831

申请日：2015-11-30

申请人： SolarCity Corporation

发明人： Jianming Fu ,  Zheng Xu ,  Jiunn Benjamin Heng ,  Chentao Yu

IPC分类号： H01L31/074 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/0224

CPC分类号： H01L31/074 ,  H01L31/02167 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/072 ,  H01L31/075 ,  H01L31/1804 ,  H01L31/1868 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： One embodiment of the present invention provides a solar cell. The solar cell includes a Si base layer, a passivation layer situated above the Si base layer, a layer of heavily doped amorphous Si (a-Si) situated above the passivation layer, a first transparent-conducting-oxide (TCO) layer situated above the heavily doped a-Si layer, a back-side electrode situated below the Si base layer, and a front-side electrode situated above the first TCO layer. The first TCO layer comprises at least one of: GaInO, GaInSnO, ZnInO, and ZnInSnO.

摘要翻译： 本发明的一个实施例提供一种太阳能电池。 太阳能电池包括Si基底层，位于Si基底层之上的钝化层，位于钝化层上方的重掺杂非晶硅层（a-Si）层，位于上面的第一透明导电氧化物（TCO）层 重掺杂的a-Si层，位于Si基底层下方的背面电极和位于第一TCO层上方的前侧电极。 第一TCO层包括GaInO，GaInSnO，ZnInO和ZnInSnO中的至少一种。

公开(公告)号：US09246032B2

公开(公告)日：2016-01-26

申请号：US14500538

申请日：2014-09-29

申请人： International Business Machines Corporation

发明人： Stephen W. Bedell ,  Bahman Hekmatshoartabari ,  Devendra K. Sadana ,  Davood Shahrjerdi

IPC分类号： H01L31/20 ,  H01L31/0304 ,  H01L31/077 ,  H01L31/036

CPC分类号： H01L31/074 ,  H01L31/02167 ,  H01L31/022466 ,  H01L31/0304 ,  H01L31/036 ,  H01L31/077 ,  H01L31/20 ,  Y02E10/50 ,  Y02E10/544 ,  Y02P70/521

摘要： Solar cell structures that have improved carrier collection efficiencies at a heterointerface are provided by low temperature epitaxial growth of silicon on a III-V base. Additionally, a solar cell structure having improved open circuit voltage includes a shallow junction III-V emitter formed by epitaxy or diffusion followed by the epitaxy of SixGe1−x passivated by amorphous SiyGe1−y:H.

摘要翻译： 通过在III-V基底上的硅的低温外延生长，提供在异质界面上提高载流子收集效率的太阳能电池结构。 此外，具有改进的开路电压的太阳能电池结构包括通过外延或扩散形成的浅结III-V发射体，随后是通过非晶SiyGe1-y：H钝化的SixGe1-x的外延。

公开(公告)号：US20160013350A1

公开(公告)日：2016-01-14

申请号：US14807347

申请日：2015-07-23

申请人： The Boeing Company

发明人： Richard R. King ,  Christopher M. Fetzer ,  Nasser H. Karam

IPC分类号： H01L31/074 ,  H01L31/18 ,  H01L31/0725

CPC分类号： H01L31/074 ,  H01L31/0687 ,  H01L31/0725 ,  H01L31/0735 ,  H01L31/0745 ,  H01L31/078 ,  H01L31/18 ,  Y02E10/50 ,  Y02E10/544

摘要： Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.

公开(公告)号：US20160013339A1

公开(公告)日：2016-01-14

申请号：US14676183

申请日：2015-04-01

申请人： Chia-Gee WANG

发明人： Chia-Gee WANG

IPC分类号： H01L31/0352 ,  H01L31/18

CPC分类号： H01L31/035218 ,  H01L31/072 ,  H01L31/074 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

摘要： A photovoltaic (PV) device including: (a) a p-n junction having (i) p-type silicon substrate with an Al-doped P++ surface, (ii) a wide band intrinsic AlP region having a first side formed on the Al-doped P++ surface of the silicon substrate, and (iii) an Si-doped n++ surface formed on a second side of the AlP region that is opposite to the first side; (b) charged quantum dots formed on the Si-doped n++ surface of the p-n junction and optionally (c) an electrode connected to each side of the device; wherein the charged quantum dots are operatively linked to the p-n junction to enable electrons harvested from IR photons absorbed by the quantum dots to be harvested with electrons harvested from photons absorbed by the p-n junction and wherein the wide band intrinsic AlP region is configured to inhibit leakage of hole current. Also, a method for forming the PV device.

摘要翻译： 一种光伏（PV）装置，包括：（a）具有（i）具有Al掺杂P ++表面的p型硅衬底的pn结，（ii）宽带本征AlP区，其具有形成在Al掺杂 P ++表面，以及（iii）形成在与第一面相反的AlP区域的第二面上的Si掺杂的n ++表面; （b）在p-n结的Si掺杂的n ++表面上形成的带电量子点，并且可选地（c）连接到器件的每一侧的电极; 其中带电量子点可操作地连接到pn结，以使从由量子点吸收的IR光子获得的电子能够从由pn结吸收的光子收集的电子收获，并且其中宽带本征AlP区被配置为抑制泄漏 的空穴电流。 另外，也可以构成PV装置的方法。