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241 条记录 (耗时 0.025 秒)

    Semiconductor light-emitting device
    61.
    发明授权
    Semiconductor light-emitting device 有权
    半导体发光装置

    公开(公告)号：US07468528B2

    公开(公告)日：2008-12-23

    申请号：US11329589

    申请日：2006-01-10

    申请人： Jun Suzuki ,  Masato Doi ,  Hiroyuki Okuyama ,  Goshi Biwa

    发明人： Jun Suzuki ,  Masato Doi ,  Hiroyuki Okuyama ,  Goshi Biwa

    IPC分类号： H01L33/00

    CPC分类号： H01L33/20 ,  Y10S257/918

    摘要： A semiconductor light-emitting device is provided. The semiconductor light-emitting device includes a laminated semiconductor structure portion composed of at least a first conductivity type first cladding layer, an active layer and a second conductivity type second cladding layer, wherein an outer peripheral surface of this laminated semiconductor structure portion is formed as a curved surface shape which is protrusively curved or bent with respect to the outside of the laminated direction.

    摘要翻译： 提供了一种半导体发光器件。 半导体发光装置包括由至少第一导电型第一包层，有源层和第二导电型第二包层构成的层叠半导体结构部，其中，该层叠半导体结构部的外周面形成为 相对于层叠方向的外侧突出地弯曲或弯曲的曲面形状。

    Apparatus and method for driving LED
    63.
    发明申请
    Apparatus and method for driving LED 有权
    LED驱动装置及方法

    公开(公告)号：US20070159472A1

    公开(公告)日：2007-07-12

    申请号：US11651459

    申请日：2007-01-10

    申请人： Seong Park

    发明人： Seong Park

    IPC分类号： G09G5/00 ,  G09G3/14

    CPC分类号： G09G3/3413 ,  G09G2310/0235 ,  G09G2320/0242 ,  Y10S257/918

    摘要： Provided are an apparatus and method for driving LEDs. The apparatus comprise a plurality of red, green, and blue light emitting diodes connected, respectively; switching units turned on or off by an inputted pulse to turn on or off the red, green and blue light emitting diodes, respectively; and a control unit outputting respective pulses to sequentially delay a turn-on or turn-off time between the switching units.

    摘要翻译： 提供了用于驱动LED的装置和方法。 该装置包括分别连接的多个红色，绿色和蓝色发光二极管; 开关单元通过输入脉冲打开或关闭，分别打开或关闭红色，绿色和蓝色发光二极管; 以及控制单元，输出各个脉冲以顺序地延迟开关单元之间的接通或关断时间。

    LIGHT EMITTING ELEMENT ARRAY AND IMAGE FORMING APPARATUS
    64.
    发明申请
    LIGHT EMITTING ELEMENT ARRAY AND IMAGE FORMING APPARATUS 有权
    发光元件阵列和图像形成装置

    公开(公告)号：US20070131950A1

    公开(公告)日：2007-06-14

    申请号：US11609595

    申请日：2006-12-12

    申请人： Tetsuya Takeuchi

    发明人： Tetsuya Takeuchi

    IPC分类号： H01L33/00 ,  H01L31/12

    CPC分类号： H01L27/153 ,  B41J2/45 ,  H01L33/145 ,  H01L2924/0002 ,  Y10S257/918 ,  H01L2924/00

    摘要： A light emitting element array including an active layer commonly used for light emitting element regions, carrier injection layers which are electrically isolated from each other and which are provided in the respective light emitting element regions, and a resistive layer which has a resistance higher than that of the carrier injection layers and which is provided between the active layer and the carrier injection layers.

    摘要翻译： 包括通常用于发光元件区域的有源层的发光元件阵列，彼此电隔离并设置在各个发光元件区域中的并且设置在各个发光元件区域中的载流子注入层以及电阻高于其的电阻层。 并且设置在有源层和载流子注入层之间。

    LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
    65.
    发明申请
    LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 有权
    发光装置及其制造方法

    公开(公告)号：US20070029554A1

    公开(公告)日：2007-02-08

    申请号：US11459768

    申请日：2006-07-25

    申请人： Osamu NAKAMURA ,  Miyuki HIGUCHI ,  Yasuko WATANABE ,  Yasuyuki ARAI

    发明人： Osamu NAKAMURA ,  Miyuki HIGUCHI ,  Yasuko WATANABE ,  Yasuyuki ARAI

    IPC分类号： H01L29/04

    CPC分类号： H01L27/1266 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/14645 ,  H01L27/3227 ,  H01L27/3253 ,  H01L27/3288 ,  H01L2227/326 ,  Y10S257/918

    摘要： To prevent a point defect and a line defect in forming a light-emitting device, thereby improving the yield. A light-emitting element and a driver circuit of the light-emitting element, which are provided over different substrates, are electrically connected. That is, a light-emitting element and a driver circuit of the light-emitting element are formed over different substrates first, and then electrically connected. By providing a light-emitting element and a driver circuit of the light-emitting element over different substrates, the step of forming the light-emitting element and the step of forming the driver circuit of the light-emitting element can be performed separately. Therefore, degrees of freedom of each step can be increased, and the process can be flexibly changed. Further, steps (irregularities) on the surface for forming the light-emitting element can be reduced than in the conventional technique.

    摘要翻译： 为了防止形成发光装置的点缺陷和线缺陷，从而提高产量。 设置在不同基板上的发光元件的发光元件和驱动电路电连接。 也就是说，发光元件的发光元件和驱动电路首先形成在不同的基板上，然后电连接。 通过在不同的基板上设置发光元件的发光元件和驱动电路，可以分别进行形成发光元件的步骤和形成发光元件的驱动电路的步骤。 因此，能够提高各步的自由度，能够灵活地变更处理。 此外，与传统技术相比，可以减少用于形成发光元件的表面上的台阶（凹凸）。

    Electrode structure, semiconductor light-emitting device having the same and method of manufacturing the same
    66.
    发明申请
    Electrode structure, semiconductor light-emitting device having the same and method of manufacturing the same 审中-公开
    电极结构，半导体发光装置及其制造方法

    公开(公告)号：US20060252165A1

    公开(公告)日：2006-11-09

    申请号：US11476680

    申请日：2006-06-29

    申请人： Mi-yang Kim ,  Joon-seop Kwak

    发明人： Mi-yang Kim ,  Joon-seop Kwak

    IPC分类号： H01L21/00

    CPC分类号： H01L33/40 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/021 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/2231 ,  H01S5/34333 ,  H01S2304/00 ,  Y10S257/918 ,  Y10S257/93

    摘要： A semiconductor light emitting device including a p-type electrode structure and having a low contact resistance and high reflectance is provided. The semiconductor light emitting device comprises a transparent substrate, an electron injection layer having first and second regions on the transparent substrate, an active region formed on the first region, a hole injection layer on the active layer, a first electrode structure on the second region, and a second electrode structure on the hole injection layer, and comprises a first layer including nitrogen and a second layer including Pd. The low contact resistance and high reflectance can be obtained by forming a trivalent compound layer composed of Pa—Ga—N at an interface between the hole injection layer, which is composed of p-GaN, and the metal layer of the p-type electrode.

    摘要翻译： 提供了包括p型电极结构并具有低接触电阻和高反射率的半导体发光器件。 半导体发光器件包括透明衬底，在透明衬底上具有第一和第二区域的电子注入层，形成在第一区域上的有源区，有源层上的空穴注入层，第二区域上的第一电极结构 以及空穴注入层上的第二电极结构，并且包括包含氮的第一层和包含Pd的第二层。 低接触电阻和高反射率可以通过在由p-GaN组成的空穴注入层与p型电极的金属层之间的界面处形成由Pa-Ga-N组成的三价化合物层来获得 。

    Light-activated semiconductor switches
    67.
    发明授权
    Light-activated semiconductor switches 有权
    光激活半导体开关

    公开(公告)号：US07057214B2

    公开(公告)日：2006-06-06

    申请号：US10611447

    申请日：2003-07-01

    申请人： David M. Giorgi ,  Tajchai Navapanich

    发明人： David M. Giorgi ,  Tajchai Navapanich

    IPC分类号： H01L29/417 ,  H01L29/74 ,  H01L31/111

    CPC分类号： G02B6/4204 ,  Y10S257/918

    摘要： Semiconductor switches, such as thyristors, may be light activated by introducing the light into the switch via a groove having a sloped surface to receive the triggering light. The use of a sloped surface increases the surface path length between points of different electrical potential in the groove and, therefore, reduces the likelihood of electrical breakdown on the groove wall. In one particular embodiment, a light-activated thyristor includes a semiconductor anode layer, an n-base layer, a p-base layer and a semiconductor cathode layer disposed parallel to a thyristor plane. A thyristor axis lies perpendicular to the thyristor plane. A groove having a light refracting side wall extends into the thyristor from the anode layer. A portion of the light refracting side wall is disposed non-parallel to the thyristor plane and to the thyristor axis, and extends in the n-drift layer.

    摘要翻译： 诸如晶闸管的半导体开关可以通过经由具有倾斜表面的凹槽将光引入开关而被激活，以接收触发光。 倾斜表面的使用增加了凹槽中不同电位点之间的表面路径长度，因此减小了在凹槽壁上电击穿的可能性。 在一个特定实施例中，光激活晶闸管包括半导体阳极层，n基极层，p基极层和平行于晶闸管平面设置的半导体阴极层。 晶闸管轴垂直于晶闸管平面。 具有光折射侧壁的凹槽从阳极层延伸到晶闸管中。 光折射侧壁的一部分设置成不平行于晶闸管平面和晶闸管轴线，并在n漂移层中延伸。

    Semiconductor light emitting device
    68.
    发明授权
    Semiconductor light emitting device 失效
    半导体发光器件

    公开(公告)号：US07019323B2

    公开(公告)日：2006-03-28

    申请号：US10690580

    申请日：2003-10-23

    申请人： Yukio Shakuda ,  Yukio Matsumoto ,  Nobuaki Oguro

    发明人： Yukio Shakuda ,  Yukio Matsumoto ,  Nobuaki Oguro

    IPC分类号： H01L29/06

    CPC分类号： H01L33/405 ,  Y10S257/918

    摘要： A semiconductor light emitting device is formed by adhering a semiconductor layered portion having a light emitting layer forming portion to a conductive substrate via a metal layer. The metal layer has at least a first metal layer for ohmic contact with the semiconductor layered portion, a second metal layer made of Ag, and a third metal layer made of a metal which allows adhesion to the conductive substrate at a low temperature. As a result, the rate of reflection of light from the metal layer increases due to the presence of Ag in the metal layer. Further, the metal in the metal layer is prohibited from diffusing into the semiconductor layer, so that the semiconductor layer does not absorb light. And therefore the brightness of the semiconductor light emitting device can further be increased.

    摘要翻译： 通过将具有发光层形成部分的半导体层叠部分经由金属层粘附到导电基板来形成半导体发光器件。 金属层至少具有用于与半导体层叠部分欧姆接触的第一金属层，由Ag制成的第二金属层和由金属制成的第三金属层，其允许在低温下粘附到导电基板。 结果，由于在金属层中存在Ag，来自金属层的光的反射率增加。 此外，金属层中的金属被禁止扩散到半导体层中，使得半导体层不吸收光。 因此，能够进一步提高半导体发光元件的亮度。

    Light emitting device and method of fabricating the same
    69.
    发明授权
    Light emitting device and method of fabricating the same 失效
    发光元件及其制造方法

    公开(公告)号：US06995401B2

    公开(公告)日：2006-02-07

    申请号：US10690479

    申请日：2003-10-22

    申请人： Masato Yamada ,  Nobuhiko Noto ,  Masanobu Takahashi ,  Kingo Suzuki ,  Shinji Nozaki ,  Kazuo Uchida ,  Hiroshi Morisaki

    发明人： Masato Yamada ,  Nobuhiko Noto ,  Masanobu Takahashi ,  Kingo Suzuki ,  Shinji Nozaki ,  Kazuo Uchida ,  Hiroshi Morisaki

    IPC分类号： H01L27/15

    CPC分类号： H01L33/14 ,  H01L33/20 ,  H01L33/42 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  Y10S257/918 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A light emitting device having an oxide transparent electrode layer as an emission drive electrode, and designed so that damage possibly occurs during bonding of electrode wires to the bonding pads is less influential to a light emitting layer portion is disclosed. The light emitting device has the light emitting layer portion composed of a compound semiconductor and has a double heterostructure in which a first-conductivity-type cladding layer, an active layer and a second-conductivity-type cladding layer are stacked in this order; and the light emitting layer portion is applied with emission drive voltage through an oxide transparent electrode layer formed so as to cover the main surface of the second-conductivity-type cladding layer. A bonding pad composed of a metal is disposed on the oxide transparent electrode layer, and to the bonding pad an electrode wire for current supply is bonded. Between the second-conductivity cladding layer and the oxide transparent electrode layer, a cushion layer composed of a compound semiconductor having a dopant concentration lower than that of the second-conductivity-type cladding layer is disposed.

    摘要翻译： 公开了一种具有氧化物透明电极层作为发光驱动电极的发光元件，其设计成使得在电极线接合到接合焊盘时可能发生的损伤对于发光层部分影响较小。 发光器件具有由化合物半导体构成的发光层部分，并且具有双重异质结构，其中第一导电型包层，有源层和第二导电型包覆层依次层叠; 并且通过形成为覆盖第二导电型包层的主表面的氧化物透明电极层施加发光驱动电压。 在氧化物透明电极层上设置由金属构成的接合焊盘，并且接合用于电流供给用的电极线。 在第二导电率包层和氧化物透明电极层之间设置由掺杂剂浓度低于第二导电型包覆层的化合物半导体构成的缓冲层。