公开(公告)号：US09638940B2

公开(公告)日：2017-05-02

申请号：US15163178

申请日：2016-05-24

Applicant: STMICROELECTRONICS SA

Inventor： Jean-Robert Manouvrier

IPC: G02F1/01 ,  G01J9/00 ,  G01J9/02 ,  G02F1/025 ,  H04B10/50 ,  G02F1/21 ,  G02F1/225

CPC classification number: G02F1/0123 ,  G01J9/00 ,  G01J9/02 ,  G02F1/025 ,  G02F1/218 ,  G02F1/2257 ,  G02F2001/212 ,  G02F2201/58 ,  G02F2203/50 ,  H04B10/5053 ,  H04B10/50575

Abstract: An optical modulator uses an optoelectronic phase comparator configured to provide, in the form of an electrical signal, a measure of a phase difference between two optical waves. The phase comparator includes an optical directional coupler having two coupled channels respectively defining two optical inputs for receiving the two optical waves to be compared. Two photodiodes are configured to respectively receive the optical output powers of the two channels of the directional coupler. An electrical circuit is configured to supply, as a measure of the optical phase shift, an electrical signal proportional to the difference between the electrical signals produced by the two photodiodes.

公开(公告)号：US20170092678A1

公开(公告)日：2017-03-30

申请号：US15280544

申请日：2016-09-29

Applicant: STMicroelectronics SA ,  STMicroelectronics (Crolles 2) SAS ,  Commissariat A L'Energie Atomique et aux Energies Alternatives

Inventor： Romain Girard Desprolet ,  Michel Marty ,  Salim Boutami ,  Sandrine Lhostis

IPC: H01L27/146 ,  G02B5/20 ,  H01L21/311

CPC classification number: H01L27/14625 ,  B82Y20/00 ,  G02B5/008 ,  G02B5/201 ,  G02B5/204 ,  G02B2207/101 ,  G02F1/133509 ,  G02F1/133516 ,  H01L21/311 ,  H01L27/14621 ,  H01L27/14685

Abstract: A spectral filter is manufactured using a process wherein a first rectangular bar is formed within a first layer made of a first material, said first rectangular bar being made of a second material having a different optical index. The process further includes, in a second layer over the first layer, a second rectangular bar made of the second material. The second rectangular bar is positioned in contact with the first rectangular bar. The second layer is also made of the first material.

公开(公告)号：US09589968B2

公开(公告)日：2017-03-07

申请号：US14952662

申请日：2015-11-25

Applicant: STMicroelectronics SA

Inventor： Stéphane Denorme ,  Philippe Candelier

IPC: H01L27/112 ,  H01L29/66 ,  H01L21/28 ,  H01L29/40 ,  H01L29/49

CPC classification number: H01L27/11206 ,  H01L21/28052 ,  H01L21/28097 ,  H01L21/7624 ,  H01L21/823418 ,  H01L21/84 ,  H01L23/5252 ,  H01L27/0629 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/401 ,  H01L29/4933 ,  H01L29/4975 ,  H01L29/66181 ,  H01L29/66507 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66628 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An integrated circuit includes a silicon on insulator substrate having a semiconductor film located above a buried insulating layer. At least one memory cell of the one-time-programmable type includes an MOS capacitor having a first electrode region including a gate region at least partially silicided and flanked by an insulating lateral region, a dielectric layer located between the gate region and the semiconductor film, and a second electrode region including a silicided zone of the semiconductor film, located alongside the insulating lateral region and extending at least partially under the dielectric layer.

Abstract translation: 集成电路包括具有位于掩埋绝缘层上方的半导体膜的绝缘体上硅衬底。 一次可编程类型的至少一个存储单元包括具有第一电极区域的MOS电容器，该第一电极区域包括至少部分硅化并且侧壁为绝缘横向区域的栅极区域，位于栅极区域和半导体膜之间的电介质层 以及包括半导体膜的硅化物区域的第二电极区域，位于绝缘横向区域旁边并且至少部分地延伸到介电层下方。

公开(公告)号：US09571160B2

公开(公告)日：2017-02-14

申请号：US14821053

申请日：2015-08-07

Applicant: STMicroelectronics SA

Inventor： Philippe Galy

IPC: H04B3/54 ,  H04L7/033 ,  H03M9/00 ,  H04L25/49

CPC classification number: H04B3/548 ,  H03M9/00 ,  H04L7/033 ,  H04L25/4917

Abstract: A data transmission circuit transmits a data signal over a transmission line. A digital to analog converter (DAC) operates to receive N-bit input digital values for conversion to corresponding ones of 2N different DC voltage levels. The DAC selects, for each N-bit input digital value, one of the 2N DC voltage levels. An analog to digital converter (ADC) operates to sense the DC voltage on the transmission line for conversion to a corresponding N-bit output digital value.

Abstract translation: 数据传输电路通过传输线传输数据信号。 数模转换器（DAC）用于接收N位输入数字值，以转换为2N个不同直流电压电平中的相应的数字值。 DAC为每个N位输入数字值选择2N直流电压电平之一。 模数转换器（ADC）用于检测传输线上的直流电压，以转换为相应的N位输出数字值。

公开(公告)号：US20170012043A1

公开(公告)日：2017-01-12

申请号：US15041593

申请日：2016-02-11

Applicant: STMicroelectronics SA

Inventor： Philippe Galy ,  Sotirios Athanasiou

IPC: H01L27/092 ,  H01L21/84 ,  H01L23/528 ,  H01L21/8238 ,  H01L27/12

CPC classification number: H01L27/092 ,  H01L21/8238 ,  H01L21/823871 ,  H01L21/84 ,  H01L23/528 ,  H01L27/1203 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/165 ,  H01L29/66772 ,  H01L29/78603 ,  H01L29/78615 ,  H01L29/78648 ,  H01L29/78654

Abstract: A substrate contact land for a first MOS transistor is produced in and on an active zone of a substrate of silicon on insulator type using a second MOS transistor without any PN junction that is also provided in the active zone. A contact land on at least one of a source or drain region of the second MOS transistor forms the substrate contact land.

Abstract translation: 使用第二MOS晶体管在绝缘体上的硅衬底的有源区中及其上产生用于第一MOS晶体管的衬底接触区，而没有任何PN结的也在激活区中提供。 第二MOS晶体管的源极或漏极区域中的至少一个上的接触焊盘形成衬底接触区域。

公开(公告)号：US09536622B2

公开(公告)日：2017-01-03

申请号：US14844442

申请日：2015-09-03

Applicant: STMicroelectronics SA

Inventor： Stephane Lacouture ,  Joel Damiens

IPC: G11C17/16 ,  G11C16/18 ,  G11C17/14 ,  G11C17/18 ,  G11C5/14

CPC classification number: G11C17/18 ,  G11C5/145 ,  G11C17/16 ,  G11C17/165

Abstract: For programming an antifuse memory, the power consumption of the memory is assessed during programming mode. The power consumption is compared with a threshold. When the threshold is exceeded, indicative of successful programming of the antifuse memory cell, the programming mode is terminated.

Abstract translation: 为了编程反熔丝存储器，在编程模式下评估存储器的功耗。 将功耗与阈值进行比较。 当超过阈值时，指示反熔丝存储器单元的成功编程，编程模式被终止。

公开(公告)号：US20160370815A1

公开(公告)日：2016-12-22

申请号：US14960052

申请日：2015-12-04

Applicant: STMicroelectronics SA

Inventor： Philippe Galy ,  Sotirios Athanasiou ,  Julien Le Coz ,  Sylvain Engels

IPC: G05F1/46

CPC classification number: G05F1/463 ,  H01L23/345 ,  H01L27/0251 ,  H01L27/0629 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An electronic device includes an integrated circuit with a MOS transistor and a heating circuit electrically coupled to at least two points of one of the source or drain semiconductive region of the transistor. A portion of the source or drain semiconductive region between the two points forms a resistive element. The heating circuit is configured to cause a current to circulate through the resistive element between the two points to heat an active region of the transistor.

Abstract translation: 电子器件包括具有MOS晶体管的集成电路和与该晶体管的源极或半导体半导体区域中的至少两个点的至少两个点电耦合的加热电路。 两点之间的源极或漏极半导体区域的一部分形成电阻元件。 加热电路被配置为使电流在两个点之间循环通过电阻元件，以加热晶体管的有源区。

公开(公告)号：US20160366758A1

公开(公告)日：2016-12-15

申请号：US14956512

申请日：2015-12-02

Applicant: STMICROELECTRONICS (CROLLES 2) SAS ,  STMICROELECTRONICS SA

Inventor： Nicolas HOTELLIER ,  François GUYADER ,  Vincent FIORI ,  Richard FOURNEL ,  Frédéric GIANESELLO

IPC: H05K1/02 ,  H05K1/11 ,  H05K3/00 ,  H05K1/18

CPC classification number: H05K1/0216 ,  H01L21/762 ,  H01L21/7624 ,  H01L21/764 ,  H01L24/03 ,  H01L24/05 ,  H01L29/0657 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2924/00014 ,  H05K1/111 ,  H05K1/181 ,  H05K3/0011 ,  H01L2224/05599

Abstract: An electronic device has a rear plate that includes a substrate rear layer, a substrate front layer and a dielectric intermediate layer between the substrate rear and front layers. An electronic structure is on the substrate front layer and includes electronic components and electrical connections. The substrate rear layer includes a solid local region and a hollowed-out local region. The hollowed-out local region extends over all of the substrate rear layer. The substrate rear layer does not cover at least one local zone of the dielectric intermediate layer corresponding to the hollowed-out local region.

Abstract translation: 电子设备具有背板，其包括基板后层，基板前层和介于基板后层与前层之间的电介质中间层。 电子结构位于基板前层上，并且包括电子部件和电连接。 基板后层包括固体局部区域和中空的局部区域。 中空的局部区域在所有基板后层上延伸。 基板后层不覆盖与中空的局部区域对应的介电中间层的至少一个局部区域。

公开(公告)号：US20160343638A1

公开(公告)日：2016-11-24

申请号：US14958623

申请日：2015-12-03

Applicant: STMicroelectronics SA

Inventor： Pierre Bar ,  Perceval Coudrain

IPC: H01L23/373 ,  H01L23/498 ,  H01L21/48

CPC classification number: H01L23/373 ,  H01L21/4846 ,  H01L21/486 ,  H01L21/4882 ,  H01L21/76898 ,  H01L23/473 ,  H01L23/481 ,  H01L23/498 ,  H01L23/49827 ,  H01L25/0657 ,  H01L25/50 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06568 ,  H01L2225/06589

Abstract: A three-dimensional integrated structure includes a first and a second element each having an interconnection part formed by metallization levels encased in an insulating region. The first and second elements are attached to one another by the respective interconnection parts. The first element includes an electrical connection via passing through a substrate. A thermal cooling system includes at least one cavity having a first part located in the insulating region of the interconnection part of the first element and a second part located in the insulating region of the interconnection part of the second element and at least one through channel extending from a rear face of the first element to open into the at least one cavity.

Abstract translation: 三维集成结构包括第一和第二元件，每个元件具有通过金属化等级封装在绝缘区域中形成的互连部件。 第一和第二元件通过相应的互连部件彼此附接。 第一元件包括通过基板的电连接。 热冷却系统包括至少一个腔，其具有位于第一元件的互连部分的绝缘区域中的第一部分和位于第二元件的互连部分的绝缘区域中的第二部分，以及至少一个贯穿通道 从第一元件的后表面开始进入至少一个空腔。

公开(公告)号：US20160313177A1

公开(公告)日：2016-10-27

申请号：US14920373

申请日：2015-10-22

Applicant: STMicroelectronics SA

Inventor： Hani Sherry

IPC: G01J1/42 ,  G01J1/44

CPC classification number: G01J1/4228 ,  G01J1/42 ,  G01J1/44 ,  H03K3/0315

Abstract: The present disclosure concerns a high frequency imager including a pixel matrix, each pixel including a high frequency oscillator, a transmission line positioned at a distance from an active surface of the imager smaller than the operating wavelength of the oscillator, a first end of the line being coupled to the oscillator, and a read circuit coupled to a second end of the line.

Abstract translation: 本公开涉及包括像素矩阵的高频成像器，每个像素包括高频振荡器，位于与成像器的有源表面相距一定距离处的传输线小于振荡器的工作波长，线的第一端 耦合到所述振荡器，以及耦合到所述线路的第二端的读取电路。