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公开(公告)号：US20080146007A1
公开(公告)日：2008-06-19
申请号：US11610991
申请日：2006-12-14
Applicant: Mihaela Balseanu , Victor T. Nguyen , Li-Qun Xia , Vladimir Zubkov , Derek R. Witty , Hichem M'Saad
Inventor： Mihaela Balseanu , Victor T. Nguyen , Li-Qun Xia , Vladimir Zubkov , Derek R. Witty , Hichem M'Saad
IPC: H01L21/20
CPC classification number: H01L21/02167 , H01L21/0206 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/3148 , H01L21/3185 , H01L21/823807 , H01L29/7843
Abstract: A method for forming a compressive stress carbon-doped silicon nitride layer is provided. The method includes forming an initiation layer and a bulk layer thereon, wherein the bulk layer has a compressive stress of between about −0.1 GPa and about −10 GPa. The initiation layer is deposited from a gas mixture that includes a silicon and carbon-containing precursor and optionally a nitrogen and/or source but does not include hydrogen gas. The bulk layer is deposited from a gas mixture that includes a silicon and carbon-containing precursor, a nitrogen source, and hydrogen gas. The initiation layer is a thin layer that allows good transfer of the compressive stress of the bulk layer therethrough to an underlying layer, such as a channel of a transistor.
Abstract translation: 提供了形成压应力碳掺杂氮化硅层的方法。 该方法包括在其上形成起始层和本体层，其中本体层的压应力在约-0.1GPa和约-10GPa之间。 起始层由包含硅和含碳前体以及任选的氮和/或源的气体混合物沉积，但不包括氢气。 本体层由包含硅和碳的前体，氮源和氢气的气体混合物沉积。 引发层是允许体层的压应力通过其传递到诸如晶体管的通道的下层的薄层。
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72.发明申请公开(公告)号：US20070295272A1
公开(公告)日：2007-12-27
申请号：US11680278
申请日：2007-02-28
Applicant: Deenesh Padhi , Chiu Chan , Sudha Rathi , Ganesh Balasubramanian , Jianhua Zhou , Karthik Janakiraman , Martin J. Seamons , Visweswaren Sivaramakrishnan , Derek R. Witty , Hichem M'Saad
Inventor： Deenesh Padhi , Chiu Chan , Sudha Rathi , Ganesh Balasubramanian , Jianhua Zhou , Karthik Janakiraman , Martin J. Seamons , Visweswaren Sivaramakrishnan , Derek R. Witty , Hichem M'Saad
CPC classification number: C23C16/45565 , C23C16/0254 , C23C16/26 , C23C16/4404
Abstract: An article having a protective coating for use in semiconductor applications and methods for making the same are provided. In certain embodiments, a method of coating an aluminum surface of an article utilized in a semiconductor processing chamber is provided. The method comprises providing a processing chamber; placing the article into the processing chamber; flowing a first gas comprising a carbon source into the processing chamber; flowing a second gas comprising a nitrogen source into the processing chamber; forming a plasma in the chamber; and depositing a coating material on the aluminum surface. In certain embodiments, the coating material comprises an amorphous carbon nitrogen containing layer. In certain embodiments, the article comprises a showerhead configured to deliver a gas to the processing chamber.
Abstract translation: 提供了具有用于半导体应用的保护涂层的制品及其制造方法。 在某些实施例中，提供了在半导体处理室中使用的制品的铝表面的涂覆方法。 该方法包括提供处理室; 将物品放入处理室; 将包含碳源的第一气体流入所述处理室; 将包含氮源的第二气体流入所述处理室; 在室内形成等离子体; 以及在铝表面上沉积涂层材料。 在某些实施方案中，涂层材料包含无定形含碳氮层。 在某些实施例中，制品包括构造成将气体输送到处理室的喷头。
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73.发明申请METHOD TO MITIGATE IMPACT OF UV AND E-BEAM EXPOSURE ON SEMICONDUCTOR DEVICE FILM PROPERTIES BY USE OF A BILAYER FILM 失效通过使用双层膜减少紫外线和电子束接触对半导体器件膜特性的影响的方法公开(公告)号：US20070281497A1
公开(公告)日：2007-12-06
申请号：US11751516
申请日：2007-05-21
Applicant: Yijun Liu , Huiwen Xu , Li-Qun Xia , Chad Peterson , Hichem M'saad
Inventor： Yijun Liu , Huiwen Xu , Li-Qun Xia , Chad Peterson , Hichem M'saad
IPC: H01L21/469 , H01L21/4763
CPC classification number: H01L21/022 , H01L21/02126 , H01L21/02167 , H01L21/02304 , H01L21/02348 , H01L21/02351 , H01L21/3105 , H01L21/31144 , H01L21/3148 , H01L21/7681 , H01L21/76825 , H01L21/76832
Abstract: Methods are provided for processing a substrate comprising a bilayer barrier film thereon. In one aspect, a method comprises depositing a first barrier layer, depositing a second barrier layer on the first barrier layer, depositing a dielectric layer on the bilayer barrier film formed by the first barrier layer and the second barrier layer, and ultraviolet curing the dielectric layer. In another aspect, a method comprises depositing a first barrier layer, depositing a second barrier layer on the first barrier layer, depositing a dielectric layer on the bilayer barrier film formed by the first barrier layer and the second barrier layer, and curing the dielectric layer with an electron beam treatment.
Abstract translation: 提供了用于处理其上包含双层阻挡膜的基材的方法。 一方面，一种方法包括沉积第一阻挡层，在第一阻挡层上沉积第二阻挡层，在由第一阻挡层和第二阻挡层形成的双层阻挡膜上沉积介电层，以及紫外线固化电介质 层。 在另一方面，一种方法包括沉积第一阻挡层，在第一阻挡层上沉积第二阻挡层，在由第一阻挡层和第二阻挡层形成的双层阻挡膜上沉积介电层，以及使介电层 用电子束处理。
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公开(公告)号：US20070207275A1
公开(公告)日：2007-09-06
申请号：US11508544
申请日：2006-08-23
Applicant: Thomas Nowak , Kang Sub Yim , Sum-Yee Betty Tang , Kwangduk Douglas Lee , Vu Ngoc Tran Nguyen , Dennis Singleton , Martin Jay Seamons , Karthik Janakiraman , Ganesh Balasubramanian , Mohamed Ayoub , Wendy H. Yeh , Alexandros T. Demos , Hichem M'Saad
Inventor： Thomas Nowak , Kang Sub Yim , Sum-Yee Betty Tang , Kwangduk Douglas Lee , Vu Ngoc Tran Nguyen , Dennis Singleton , Martin Jay Seamons , Karthik Janakiraman , Ganesh Balasubramanian , Mohamed Ayoub , Wendy H. Yeh , Alexandros T. Demos , Hichem M'Saad
IPC: H05H1/24
CPC classification number: C23C16/4405 , B08B7/0035 , H01J37/32357 , H01J37/32862
Abstract: Methods for cleaning semiconductor processing chambers used to process carbon-containing films, such as amorphous carbon films, barrier films comprising silicon and carbon, and low dielectric constant films including silicon, oxygen, and carbon are provided. The methods include using a remote plasma source to generate reactive species that clean interior surfaces of a processing chamber in the absence of RF power in the chamber. The reactive species are generated from an oxygen-containing gas, such as O2, and/or a halogen-containing gas, such as NF3. An oxygen-based ashing process may also be used to remove carbon deposits from the interior surfaces of the chamber before the chamber is exposed to the reactive species from the remote plasma source.
Abstract translation: 提供了用于处理用于处理含碳膜的半导体处理室的方法，例如非晶碳膜，包含硅和碳的阻挡膜以及包括硅，氧和碳的低介电常数膜。 这些方法包括使用远程等离子体源来产生在腔室中没有RF功率的情况下清洁处理室的内表面的反应物质。 反应性物质由含氧气体（例如O 2）和/或含卤素气体如NF 3 N产生。 在室暴露于来自远程等离子体源的反应物质之前，还可以使用氧基灰化方法从室的内表面去除碳沉积物。
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公开(公告)号：US07259381B2
公开(公告)日：2007-08-21
申请号：US11006305
申请日：2004-12-06
Applicant: Josephine J. Liu , Alexandros T. Demos , Hichem M'Saad
Inventor： Josephine J. Liu , Alexandros T. Demos , Hichem M'Saad
IPC: G21K5/10
CPC classification number: H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/32935
Abstract: The Grunn equation: Depth = 0.046 ( V acc ) n ρ is modified to accurately predict depth of electron beam penetration into a target material. A two-layer stack is formed comprising a thickness of the target material overlying a detection material exhibiting greater sensitivity to the electron beam than the target material. The target material is exposed to electron beam radiation of different energies, with the threshold energy resulting in a changed physical property of the detection material below a predetermined value marking a penetration depth corresponding to the target material thickness. Utilizing the threshold energy (Vacc), the target material thickness (Depth), and the known target material density (ρ), the numerical power “n” of the Grunn equation is calculated to fit experimental results. So modified, the Grunn equation accurately predicts the depth of penetration of electron beams of varying energies into the target material.
Abstract translation: Grunn方程式：
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Patent Agency Ranking
76.发明申请Non-intrusive plasma monitoring system for arc detection and prevention for blanket CVD films 审中-公开用于毯式CVD膜的电弧检测和防止的非侵入式等离子体监测系统公开(公告)号：US20070042131A1
公开(公告)日：2007-02-22
申请号：US11208835
申请日：2005-08-22
Applicant: Jyr Hong Soo , Vu Ngoc Nguyen , Steven Reiter , Jason Foster , Bok Hoen Kim , Hichem M'Saad
Inventor： Jyr Hong Soo , Vu Ngoc Nguyen , Steven Reiter , Jason Foster , Bok Hoen Kim , Hichem M'Saad
CPC classification number: H01J37/32935
Abstract: Methods and systems of diagnosing an arcing problem in a semiconductor wafer processing chamber are described. The methods may include coupling a voltage probe to a process-gas distribution faceplate in the processing chamber, and activating an RF power source to generate a plasma between the faceplate and a substrate wafer. The methods may also include measuring the DC bias voltage of the faceplate as a function of time during the activation of the RF power source, where a spike in the measured voltage at the faceplate indicates an arcing event has occurred in the processing chamber. Methods and systems to reduce arcing in a semiconductor wafer processing chamber are also described.
Abstract translation: 描述了在半导体晶片处理室中诊断电弧问题的方法和系统。 所述方法可以包括将电压探针耦合到处理室中的处理气体分布面板，以及激活RF功率源以在面板和衬底晶片之间产生等离子体。 所述方法还可以包括在激活RF功率源期间测量面板的DC偏置电压作为时间的函数，其中面板中测量的电压的尖峰表示在处理室中发生了电弧事件。 还描述了用于减少半导体晶片处理室中的电弧的方法和系统。
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77.发明申请Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure 有权使用后PECVD沉积UV固化来增加氮化硅膜的拉伸应力的方法公开(公告)号：US20060269693A1
公开(公告)日：2006-11-30
申请号：US11400275
申请日：2006-04-07
Applicant: Mihaela Balseanu , Michael Cox , Li-Qun Xia , Mei-Yee Shek , Jia Lee , Vladimir Zubkov , Tzu-Fang Huang , Rongping Wang , Isabelita Roflox , Hichem M'Saad
Inventor： Mihaela Balseanu , Michael Cox , Li-Qun Xia , Mei-Yee Shek , Jia Lee , Vladimir Zubkov , Tzu-Fang Huang , Rongping Wang , Isabelita Roflox , Hichem M'Saad
CPC classification number: C23C16/345 , C23C16/45523 , C23C16/56 , H01L21/3141 , H01L21/3185 , H01L21/823412 , H01L21/82345 , H01L21/823807 , H01L21/823835
Abstract: High tensile stress in a deposited layer such as silicon nitride, may be achieved utilizing one or more techniques, employed alone or in combination. High tensile stress may be achieved by forming a silicon-containing layer on a surface by exposing the surface to a silicon-containing precursor gas in the absence of a plasma, forming silicon nitride by exposing said silicon-containing layer to a nitrogen-containing plasma, and then repeating these steps to increase a thickness of the silicon nitride created thereby. High tensile stress may also be achieved by exposing a surface to a silicon-containing precursor gas in a first nitrogen-containing plasma, treating the material with a second nitrogen-containing plasma, and then repeating these steps to increase a thickness of the silicon nitride formed thereby. In another embodiment, tensile film stress is enhanced by deposition with porogens that are liberated upon subsequent exposure to UV radiation or plasma treatment.
Abstract translation: 沉积层如氮化硅中的高拉伸应力可以利用单独使用或组合使用的一种或多种技术来实现。 可以通过在不存在等离子体的情况下将表面暴露于含硅前体气体而在表面上形成含硅层来形成高拉伸应力，通过将含硅层暴露于含氮等离子体而形成氮化硅 ，然后重复这些步骤以增加由此产生的氮化硅的厚度。 也可以通过在第一含氮等离子体中将表面暴露于含硅前体气体，用第二含氮等离子体处理该材料，然后重复这些步骤以增加氮化硅的厚度来实现高拉伸应力 由此形成。 在另一个实施方案中，拉伸膜应力通过在随后暴露于UV辐射或等离子体处理时释放的孔原子沉积而增强。
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公开(公告)号：US20060249175A1
公开(公告)日：2006-11-09
申请号：US11230975
申请日：2005-09-20
Applicant: Thomas Nowak , Juan Rocha-Alvarez , Andrzej Kaszuba , Scott Hendrickson , Dustin Ho , Sanjeev Baluja , Tom Cho , Josephine Chang , Hichem M'Saad
Inventor： Thomas Nowak , Juan Rocha-Alvarez , Andrzej Kaszuba , Scott Hendrickson , Dustin Ho , Sanjeev Baluja , Tom Cho , Josephine Chang , Hichem M'Saad
IPC: B08B3/12 , B08B7/00 , B08B9/00 , H01L21/306
CPC classification number: B08B7/0035 , C23C16/4405
Abstract: An ultraviolet (UV) cure chamber enables curing a dielectric material disposed on a substrate and in situ cleaning thereof. A tandem process chamber provides two separate and adjacent process regions defined by a body covered with a lid having windows aligned respectively above each process region. One or more UV bulbs per process region that are covered by housings coupled to the lid emit UV light directed through the windows onto substrates located within the process regions. The UV bulbs can be an array of light emitting diodes or bulbs utilizing a source such as microwave or radio frequency. The UV light can be pulsed during a cure process. Using oxygen radical/ozone generated remotely and/or in-situ accomplishes cleaning of the chamber. Use of lamp arrays, relative motion of the substrate and lamp head, and real-time modification of lamp reflector shape and/or position can enhance uniformity of substrate illumination.
Abstract translation: 紫外线（UV）固化室可固化设置在基底上的电介质材料并进行原位清洁。 串联处理室提供由覆盖有盖的主体限定的两个单独的和相邻的过程区域，所述盖子具有分别位于每个处理区域上方的窗口。 每个处理区域的一个或多个UV灯泡被耦合到盖的壳体覆盖，将通过窗口的UV光发射到位于处理区域内的衬底上。 UV灯泡可以是利用诸如微波或射频的源的发光二极管或灯泡阵列。 紫外光可以在固化过程中被脉冲。 使用远程生成的氧自由基/臭氧和/或原位实现清洁室。 灯阵列的使用，基板和灯头的相对运动以及灯反射器形状和/或位置的实时修改可以增强基板照明的均匀性。
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公开(公告)号：US20060207294A1
公开(公告)日：2006-09-21
申请号：US11422278
申请日：2006-06-05
Applicant: Hichem M'Saad , Anchuan Wang , Sang Ahn
Inventor： Hichem M'Saad , Anchuan Wang , Sang Ahn
IPC: C03B37/018 , C03B37/022
CPC classification number: G02B6/132 , C23C16/401 , C23C16/505 , G02B2006/12169 , G02B2006/12176
Abstract: Embodiments of the present invention provide a highly uniform low cost production worthy solution for manufacturing low propagation loss optical waveguides on a substrate. In one embodiment, the present invention provides a method of forming a PSG optical waveguide on an undercladding layer of a substrate that includes forming at least one silicate glass optical core on said undercladding layer using a plasma enhanced chemical vapor deposition process including a silicon source gas, an oxygen source gas, and a phosphorus source gas, wherein the oxygen source gas and silicon source gas have a ratio of oxygen atoms to silicon atoms greater than 20:1.
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80.发明授权公开(公告)号：US07080528B2
公开(公告)日：2006-07-25
申请号：US10279366
申请日：2002-10-23
Applicant: Hichem M'Saad , Anchuan Wang , Sang Ahn
Inventor： Hichem M'Saad , Anchuan Wang , Sang Ahn
IPC: C03B37/018
CPC classification number: G02B6/132 , C23C16/401 , C23C16/505 , G02B2006/12169 , G02B2006/12176
Abstract: Embodiments of the present invention provide a highly uniform low cost production worthy solution for manufacturing low propagation loss optical waveguides on a substrate. In one embodiment, the present invention provides a method of forming a PSG optical waveguide on an undercladding layer of a substrate that includes forming at least one silicate glass optical core on said undercladding layer using a plasma enhanced chemical vapor deposition process including a silicon source gas, an oxygen source gas, and a phosphorus source gas, wherein the oxygen source gas and silicon source gas have a ratio of oxygen atoms to silicon atoms greater than 20:1.
Abstract translation: 本发明的实施例提供了用于在衬底上制造低传播损耗光波导的高度均匀的低成本生产有价值的解决方案。 在一个实施例中，本发明提供了一种在衬底的下包层上形成PSG光波导的方法，该方法包括使用包括硅源气体的等离子体增强化学气相沉积工艺在所述下封层上形成至少一个硅酸盐玻璃光学芯 氧源气体和磷源气体，其中氧源气体和硅源气体的氧原子与硅原子的比例大于20:1。
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