公开(公告)号：US20120007132A1

公开(公告)日：2012-01-12

申请号：US12832184

申请日：2010-07-08

Applicant: Hung-Pin Chang ,  Chen-Hua Yu

Inventor： Hung-Pin Chang ,  Chen-Hua Yu

IPC: H01L33/38 ,  H01L21/3065

CPC classification number: H01L33/647 ,  H01L21/486 ,  H01L23/147 ,  H01L23/3677 ,  H01L23/49827 ,  H01L23/49838 ,  H01L24/48 ,  H01L33/642 ,  H01L2224/131 ,  H01L2224/16 ,  H01L2224/16238 ,  H01L2224/451 ,  H01L2224/48227 ,  H01L2224/48229 ,  H01L2924/0001 ,  H01L2924/00014 ,  H01L2924/12041 ,  H01L2924/1461 ,  H01L2933/0075 ,  H01L2924/013 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00015 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: The patterns (or layout), and pattern densities of TSVs described above provide layout of TSVs that could be etched with reduced etch microloading effect(s) and with good within-die uniformity. The patterns and pattern densities of TSVs for different groups of TSVs (or physically separated groups, or groups with different functions) should be fairly close amongst different groups. Different groups of TSVs (or TSVs with different functions, or physically separated TSV groups) should have relatively close shapes, sizes, and depths to allow the aspect ratio of all TSVs to be within a controlled (and optimal) range. The size(s) and depths of TSVs should be carefully selected to optimize the etching time and the metal gap-fill time.

Abstract translation: 上述TSV的图形（或布局）和图案密度提供可以用减少的蚀刻微载荷效应并且具有良好的管芯内均匀性而被蚀刻的TSV的布局。 不同组别的TSV（或物理上分离的组或具有不同功能的组）的TSV的模式和模式密度在不同组中应该相当接近。 不同组的TSV（或具有不同功能的TSV或物理分离的TSV组）应具有相对较近的形状，尺寸和深度，以允许所有TSV的纵横比在受控（和最佳）范围内。 应仔细选择TSV的尺寸和深度，以优化蚀刻时间和金属间隙填充时间。

公开(公告)号：US08085983B2

公开(公告)日：2011-12-27

申请号：US12344796

申请日：2008-12-29

Applicant: Yin-Pin Chang ,  Tai-Chang Yang ,  Hong-Long Chou

Inventor： Yin-Pin Chang ,  Tai-Chang Yang ,  Hong-Long Chou

IPC: G06K9/00

CPC classification number: G06K9/3233 ,  G06K9/00221

Abstract: A method of adjusting selected window size of an image object is applicable for tracking a target object in a video. The video includes a plurality of frames, and the target object has a display range changing with the playback of each frame. According to a variation trend of the display range of the target object, whether a variation times corresponding to the variation trend reaches a threshold value or not is recorded, and then the selected window size is reset, such that the target object is enclosed with a selected window having a size closer to the target object.

Abstract translation: 调整图像对象的选定窗口大小的方法适用于跟踪视频中的目标对象。 视频包括多个帧，并且目标对象具有随着每个帧的重放而改变的显示范围。 根据目标对象的显示范围的变化趋势，记录与变化趋势对应的变化时间是否达到阈值，然后重新设定所选择的窗口尺寸，使得目标对象被包围在 所选择的窗口具有更接近目标对象的尺寸。

公开(公告)号：US08074346B2

公开(公告)日：2011-12-13

申请号：US11849925

申请日：2007-09-04

Applicant: Jiangyuan Qian ,  Hung-Pin Chang ,  Bedri A. Cetiner ,  Mark Bachman ,  Franco DeFlaviis ,  Guann-Pyng Li

Inventor： Jiangyuan Qian ,  Hung-Pin Chang ,  Bedri A. Cetiner ,  Mark Bachman ,  Franco DeFlaviis ,  Guann-Pyng Li

IPC: H01H11/00 ,  H01H65/00

CPC classification number: H01H59/0009 ,  H01G5/16 ,  H01G5/40 ,  H01H2001/0084 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49117 ,  Y10T29/49128 ,  Y10T29/49155 ,  Y10T29/49156

Abstract: The methods described herein provide for a radio frequency micro-electromechanical systems switch having two or more resonant frequencies. The switch can be configured as a capacitive shunt switch having a deflectable member coupled between two electrodes over a transmission line. A first insulator can be located between one of the electrodes and the deflectable member to form a capacitive element. The deflectable member can be deflectable between an up-state and a down-state, the down-state capacitively coupling the deflectable member with the transmission line. The degree by which the deflectable member overlaps the first insulator can be adjusted to adjust the capacitance of the capacitive element and the resulting resonant frequency.

Abstract translation: 本文描述的方法提供具有两个或更多个谐振频率的射频微机电系统开关。 开关可以被配置为具有通过传输线耦合在两个电极之间的可偏转构件的电容分流开关。 第一绝缘体可以位于电极之间和可偏转构件之间，以形成电容元件。 可偏转构件可以在上升状态和下降状态之间偏转，下降状态将可偏转构件与传输线电容耦合。 可以调节可偏转构件与第一绝缘体重叠的程度，以调整电容元件的电容和所得到的谐振频率。

公开(公告)号：US20110279443A1

公开(公告)日：2011-11-17

申请号：US12797609

申请日：2010-06-10

Applicant: Yu-Pin Chang ,  Chih-Peng Hsia ,  Tsung-Yin Yu

Inventor： Yu-Pin Chang ,  Chih-Peng Hsia ,  Tsung-Yin Yu

IPC: G09G5/00

CPC classification number: G09G3/3688 ,  G09G3/3614 ,  G09G2310/0251 ,  G09G2310/0283 ,  G09G2320/0233 ,  G09G2320/0242

Abstract: The present invention discloses a driving module for a liquid crystal display device. The driving module includes a data line signal processing unit, for generating a plurality of data driving signals, a scan line signal processing unit, for generating a plurality of gate driving signals, and a control unit, for controlling the data line signal processing unit and the gate line signal processing unit, such that a plurality of sub-pixels corresponding to a data line are with different charging orders in different frames, or are charged with different charging periods in a same frame.

Abstract translation: 本发明公开了一种液晶显示装置的驱动模块。 驱动模块包括用于产生多个数据驱动信号的数据线信号处理单元，用于产生多个栅极驱动信号的扫描线信号处理单元，以及用于控制数据线信号处理单元和 栅极线信号处理单元，使得与数据线对应的多个子像素在不同帧中具有不同的计费顺序，或者在同一帧中以不同的充电周期充电。

公开(公告)号：US07990595B1

公开(公告)日：2011-08-02

申请号：US12827039

申请日：2010-06-30

Applicant: Ming-Chieh Chou ,  Pin Chang ,  Hung-Chung Li ,  Chung-De Chen

Inventor： Ming-Chieh Chou ,  Pin Chang ,  Hung-Chung Li ,  Chung-De Chen

IPC: G02B26/08

CPC classification number: G02B26/085 ,  G02B26/101

Abstract: An optical multi-ring scanner is disclosed, which comprises: a substrate; an outer ring driving element, disposed inside the substrate and configured symmetrically at two sides thereof with a pair of first arms that are connected respectively to the substrate; at least one inner ring driving element, each configured with a first inner ring driver in a manner that the first inner ring driver has a pair of second arms symmetrically disposed at a top side and a bottom side thereof while being connected to the outer ring driving element; and a mirror element, disposed inside the first inner ring driver and having a pair of third arms symmetrically disposed at a top side of a bottom side thereof; wherein, the third arm is disposed coaxial with the second arm while enabling the first arm to be disposed perpendicular to the second arm and the third arm.

Abstract translation: 公开了一种光学多环扫描器，其包括：基板; 外环驱动元件，设置在所述基板的内部，并且在其两侧对称地配置有分别连接到所述基板的一对第一臂; 至少一个内环驱动元件，每个内环驱动元件均以第一内环驱动器的形式配置，使得第一内环驱动器具有对称地设置在其顶侧和底侧的一对第二臂，同时连接到外环驱动 元件; 以及镜子元件，其设置在所述第一内圈驱动器内，并且具有对称地设置在其底侧的顶侧的一对第三臂; 其中，所述第三臂与所述第二臂同轴设置，同时能够使所述第一臂垂直于所述第二臂和所述第三臂设置。

公开(公告)号：US07981742B2

公开(公告)日：2011-07-19

申请号：US12166430

申请日：2008-07-02

Applicant: Wei-Chih Chien ,  Kuo-Pin Chang ,  Erh-Kun Lai ,  Kuang-Yeu Hsieh

Inventor： Wei-Chih Chien ,  Kuo-Pin Chang ,  Erh-Kun Lai ,  Kuang-Yeu Hsieh

IPC: H01L21/8248

CPC classification number: H01L27/11206 ,  H01L27/101 ,  H01L27/112

Abstract: A method of fabricating a semiconductor device is provided. The method comprises: (a) providing a first and a second conductor; (b) providing a conductive layer; (c) forming a part of the conductive layer into a data storage layer by a plasma oxidation process, wherein the data storage layer is positioned between the first and the second conductor.

Abstract translation: 提供一种制造半导体器件的方法。 该方法包括：（a）提供第一和第二导体; （b）提供导电层; （c）通过等离子体氧化工艺将导电层的一部分形成数据存储层，其中数据存储层位于第一和第二导体之间。

公开(公告)号：US07960224B2

公开(公告)日：2011-06-14

申请号：US12388655

申请日：2009-02-19

Applicant: Wei-Chih Chien ,  Kuo-Pin Chang ,  Yi-Chou Chen ,  Erh-Kun Lai ,  Kuang-Yeu Hsieh

Inventor： Wei-Chih Chien ,  Kuo-Pin Chang ,  Yi-Chou Chen ,  Erh-Kun Lai ,  Kuang-Yeu Hsieh

IPC: H01L21/8238

CPC classification number: G11C11/14 ,  G11C11/54 ,  G11C11/5685 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2013/009 ,  G11C2213/32 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1633

Abstract: A method for operating a memory device includes applying a sequence of bias arrangements across a selected metal-oxide memory element to change among resistance states. The sequence of bias arrangements includes a first set of one or more pulses to change the resistance state of the selected metal-oxide memory element from the first resistance state to a third resistance state, and a second set of one or more pulses to change the resistance state of the selected metal-oxide memory element from the third resistance state to the second resistance state.

Abstract translation: 一种用于操作存储器件的方法包括在所选择的金属氧化物存储器元件之间施加一系列偏置布置以在电阻状态之间改变。 偏置装置的顺序包括将所选择的金属氧化物存储元件的电阻状态从第一电阻状态改变为第三电阻状态的第一组一个或多个脉冲，以及第二组一个或多个脉冲以改变 所选择的金属氧化物存储元件从第三电阻状态到第二电阻状态的电阻状态。

公开(公告)号：US07957118B2

公开(公告)日：2011-06-07

申请号：US12433680

申请日：2009-04-30

Applicant: Yi-Pin Chang ,  Tung Long Lai ,  Soon Kang Huang

Inventor： Yi-Pin Chang ,  Tung Long Lai ,  Soon Kang Huang

IPC: H01L21/683 ,  H01T23/00

CPC classification number: H01L21/67288 ,  H01L21/6831

Abstract: A method for processing a semiconductor wafer comprises measuring data indicating an amount of warpage of the wafer. At least two different voltages are determined, based on the amount of warpage. The voltages are to be applied to respective portions of the wafer by an electrostatic chuck that is to hold the wafer. The at least two different voltages are applied to hold the respective portions of the wafer while performing a fabrication process on the wafer.

Abstract translation: 用于处理半导体晶片的方法包括测量表示晶片的翘曲量的数据。 基于翘曲量确定至少两个不同的电压。 通过用于保持晶片的静电卡盘将电压施加到晶片的相应部分。 施加至少两个不同的电压以在晶片上执行制造工艺时保持晶片的各个部分。

公开(公告)号：US20110122649A1

公开(公告)日：2011-05-26

申请号：US12826687

申请日：2010-06-30

Applicant: Ming Huang Wen ,  Chun Pin Chang ,  Chan Chang Ni ,  Tsung Yung Hung ,  Chung Lin Tsai

Inventor： Ming Huang Wen ,  Chun Pin Chang ,  Chan Chang Ni ,  Tsung Yung Hung ,  Chung Lin Tsai

IPC: F21V7/22

CPC classification number: G02B6/0061 ,  G02B6/0036 ,  G02B6/0068 ,  G02B6/0078

Abstract: A method and a structure for improving the uniformity light emitted from a backlight module are provided. In accordance with the present invention, a plurality of optical microstructures are intermittently distributed on an LGP of a backlight module. Each of the microstructures further includes a plurality of optical sub-microstructures. The optical microstructures and the optical sub-microstructures are distributed on the LGP with varied distribution intensities in three dimensions, such that at where the optical microstructures and the optical sub-microstructures are distributed with a larger distribution intensities the LGP refracts and reflects more light, and at where the optical microstructures and the optical sub-microstructures are distributed with a smaller distribution intensities the LGP refracts and reflects less light. In such a way, by designing particular distribution intensities of the optical microstructures and the optical sub-microstructures, the light emitted from the LGP can be uniformed.

Abstract translation: 提供了一种用于改善从背光模块发出的均匀性的方法和结构。 根据本发明，多个光学微结构被间歇地分布在背光模块的LGP上。 每个微结构还包括多个光学子微结构。 光学微结构和光学亚微观结构在三维分布强度分布在LGP上，使得在光学微结构和光学亚微观结构以更大的分布强度分布的地方，LGP折射和反射更多的光， 并且在光学微结构和光学亚微结构以更小的分布强度分布的地方，LGP折射并反射较少的光。 以这种方式，通过设计光学微结构和光学子微结构的特定分布强度，从LGP发射的光可以是均匀的。

公开(公告)号：US20100171197A1

公开(公告)日：2010-07-08

申请号：US12348622

申请日：2009-01-05

Applicant: Hung-Pin Chang ,  Kuo-Ching Hsu ,  Chen-Shien Chen ,  Wen-Chih Chiou ,  Chen-Hua Yu

Inventor： Hung-Pin Chang ,  Kuo-Ching Hsu ,  Chen-Shien Chen ,  Wen-Chih Chiou ,  Chen-Hua Yu

IPC: H01L23/48 ,  H01L21/34

CPC classification number: H01L23/481 ,  H01L21/6835 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L2221/6834 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05558 ,  H01L2224/1147 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2224/13099 ,  H01L2924/00

Abstract: An isolation structure for stacked dies is provided. A through-silicon via is formed in a semiconductor substrate. A backside of the semiconductor substrate is thinned to expose the through-silicon via. An isolation film is formed over the backside of the semiconductor substrate and the exposed portion of the through-silicon via. The isolation film is thinned to re-expose the through-silicon via, and conductive elements are formed on the through-silicon via. The conductive element may be, for example, a solder ball or a conductive pad. The conductive pad may be formed by depositing a seed layer and an overlying mask layer. The conductive pad is formed on the exposed seed layer. Thereafter, the mask layer and the unused seed layer may be removed.

Abstract translation: 提供了一种用于堆叠模具的隔离结构。 在半导体衬底中形成贯通硅通孔。 半导体衬底的背面变薄以暴露通硅通孔。 在半导体衬底的背面和透硅通孔的暴露部分之后形成隔离膜。 隔离膜被稀薄以重新暴露通硅通孔，并且导电元件形成在穿硅通孔上。 导电元件可以是例如焊球或导电垫。 可以通过沉积种子层和覆盖掩模层来形成导电焊盘。 导电焊盘形成在暴露的种子层上。 此后，可以去除掩模层和未使用的种子层。