公开(公告)号：US11848229B2

公开(公告)日：2023-12-19

申请号：US17971217

申请日：2022-10-21

Applicant: Applied Materials, Inc.

Inventor： Michael L. McSwiney ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Drew Phillips ,  Aaron Dangerfield ,  David Thompson ,  Kevin Kashefi ,  Xiangjin Xie

IPC: H01L21/768 ,  B05D1/00 ,  H01L21/02

CPC classification number: H01L21/76829 ,  B05D1/60 ,  H01L21/02118 ,  H01L21/02205 ,  H01L21/76846 ,  H01L21/76877

Abstract: Methods for selectively depositing on metallic surfaces are disclosed. Some embodiments of the disclosure utilize a hydrocarbon having at least two functional groups, at least one functional group selected from amino groups, hydroxyl groups, ether linkages or combinations thereof to form a self-assembled monolayer (SAM) on metallic surfaces.

公开(公告)号：US11643721B2

公开(公告)日：2023-05-09

申请号：US16129232

申请日：2018-09-12

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Hua Chung ,  Schubert Chu ,  Mei Chang ,  Jeffrey W. Anthis ,  David Thompson

IPC: C23C16/42 ,  C23C16/513 ,  C23C16/455 ,  C23C16/52 ,  C23C16/507 ,  C23C16/14

CPC classification number: C23C16/42 ,  C23C16/14 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/507 ,  C23C16/513 ,  C23C16/52

Abstract: Processing methods for forming iridium-containing films at low temperatures are described. The methods comprise exposing a substrate to iridium hexafluoride and a reactant to form iridium metal or iridium silicide films. Methods for enhancing selectivity and tuning the silicon content of some films are also described.

公开(公告)号：US11450525B2

公开(公告)日：2022-09-20

申请号：US16131931

申请日：2018-09-14

Applicant: Applied Materials, Inc.

Inventor： Liqi Wu ,  Hung Nguyen ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Feng Q. Liu ,  David Thompson

IPC: H01L21/00 ,  H01L21/02 ,  C23C16/04 ,  C23C16/20

Abstract: Methods of depositing films are described. Specifically, methods of depositing metal oxide films are described. A metal oxide film is selectively deposited on a metal layer relative to a dielectric layer by exposing a substrate to an organometallic precursor followed by exposure to an oxidant.

公开(公告)号：US11384648B2

公开(公告)日：2022-07-12

申请号：US16843358

申请日：2020-04-08

Applicant: Applied Materials, Inc.

Inventor： Yuriy Melnik ,  Sukti Chatterjee ,  Kaushal Gangakhedkar ,  Jonathan Frankel ,  Lance A. Scudder ,  Pravin K. Narwankar ,  David Alexander Britz ,  Thomas Knisley ,  Mark Saly ,  David Thompson

IPC: F01D5/28 ,  F01D9/02 ,  C23C16/455 ,  C23C16/34 ,  C23C16/40 ,  C23C16/30 ,  C23C16/56 ,  F01D25/12 ,  F01D25/28 ,  F23R3/28 ,  C07F11/00 ,  F01D25/14

Abstract: Protective coatings on an aerospace component are provided. An aerospace component includes a surface containing nickel, nickel superalloy, aluminum, chromium, iron, titanium, hafnium, alloys thereof, or any combination thereof, and a coating disposed on the surface, where the coating contains a nanolaminate film stack having two or more pairs of a first deposited layer and a second deposited layer. The first deposited layer contains chromium oxide, chromium nitride, aluminum oxide, aluminum nitride, or any combination thereof, the second deposited layer contains aluminum oxide, aluminum nitride, silicon oxide, silicon nitride, silicon carbide, yttrium oxide, yttrium nitride, yttrium silicon nitride, hafnium oxide, hafnium nitride, hafnium silicide, hafnium silicate, titanium oxide, titanium nitride, titanium silicide, titanium silicate, or any combination thereof, and the first deposited layer and the second deposited layer have different compositions from each other.

公开(公告)号：US11293093B2

公开(公告)日：2022-04-05

申请号：US15863203

申请日：2018-01-05

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Feng Chen ,  Jeffrey W. Anthis ,  David Thompson ,  Mei Chang

IPC: C23C16/06 ,  C23C16/455 ,  C23C16/18 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768

Abstract: Processing methods comprising exposing a substrate to a first reactive gas comprising an ethylcyclopentadienyl ruthenium complex or a cyclohexadienyl ruthenium complex and a second reactive gas comprising water to form a ruthenium film are described.

公开(公告)号：US11094544B2

公开(公告)日：2021-08-17

申请号：US16522226

申请日：2019-07-25

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Benjamin Schmiege ,  Jeffrey W. Anthis ,  Abhijit Basu Mallick ,  Susmit Singha Roy ,  Ziqing Duan ,  Yihong Chen ,  Kelvin Chan ,  Srinivas Gandikota

IPC: H01L21/00 ,  H01L21/033 ,  C23F1/00 ,  H01L21/3213 ,  H01L21/321 ,  H01L21/768

Abstract: Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create a self-aligned via.

公开(公告)号：US20210123136A1

公开(公告)日：2021-04-29

申请号：US17084184

申请日：2020-10-29

Applicant: Applied Materials, Inc.

Inventor： Lakmal C. Kalutarage ,  Liqi Wu ,  Pratham Jain ,  Jeffrey W. Anthis ,  Mark Saly ,  Mei Chang ,  David Thompson

IPC: C23C16/455 ,  H01L21/285 ,  C23C16/34 ,  C23C16/56

Abstract: The use of a cyclic 1,4-diene reducing agent with a metal precursor and a reactant to form metal-containing films are described. Methods of forming the metal-containing film comprises exposing a substrate surface to a metal precursor, a reducing agent and a reactant either simultaneously, partially simultaneously or separately and sequentially to form the metal-containing film.

公开(公告)号：US20210066592A1

公开(公告)日：2021-03-04

申请号：US17000457

申请日：2020-08-24

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Nasrin Kazem ,  Jeffrey W. Anthis ,  Ghazal Saheli ,  David Thompson

IPC: H01L45/00 ,  H01L27/24

Abstract: Methods of depositing a metal-organic oxide film by exposing a substrate surface to a metal-organic precursor and an oxidant are described. The metal-organic oxide film has the general formula MOxCy, wherein M comprises one or more of a transition metal, a lanthanide, or a boron group element, x is a whole number in a range of 1 to 6, and y is a number in a range of greater than 0 to 0.5.

公开(公告)号：US20210028004A1

公开(公告)日：2021-01-28

申请号：US17068188

申请日：2020-10-12

Applicant: Applied Materials, Inc.

Inventor： Mark Saly ,  David Thompson ,  Thomas Knisley ,  Bhaskar Jyoti Bhuyan

IPC: H01L21/02

Abstract: Methods of forming SiCON films comprising sequential exposure to a silicon precursor and a mixture of alkanolamine and amine reactants and an optional plasma are described. Methods of forming a silicon-containing film comprising sequential exposure to a silicon precursor and an epoxide with an optional plasma exposure are also described.

公开(公告)号：US10760159B2

公开(公告)日：2020-09-01

申请号：US15649584

申请日：2017-07-13

Applicant: Applied Materials, Inc.

Inventor： Lakmal C. Kalutarage ,  Mark Saly ,  Thomas Knisley ,  Benjamin Schmiege ,  David Thompson

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/458 ,  C23C16/52 ,  C23C16/56

Abstract: Methods for depositing a yttrium-containing film through an atomic layer deposition process are described. Some embodiments of the disclosure utilize a plasma-enhanced atomic layer deposition process. Also described is an apparatus for performing the atomic layer deposition of the yttrium containing films.