公开(公告)号：US20120218241A1

公开(公告)日：2012-08-30

申请号：US13034458

申请日：2011-02-24

申请人： Chan-Long Shieh ,  Gang Yu

发明人： Chan-Long Shieh ,  Gang Yu

IPC分类号： G06F3/038

CPC分类号： G09G3/3225 ,  G09G2310/063 ,  G09G2320/0204

摘要： A method of driving a display device includes providing an array of pixels including rows and columns of pixels, each pixel including a switching/driving transistor circuit and at least one light emitting device. Each row of pixels has a scan line and each column of pixels has a data line. The method further includes defining a frame period during which each pixel in the array of pixels is addressed and dividing the frame period into a write subframe, a display subframe, and a rest subframe. A scan pulse is supplied to each scan line, a data signal to each data line and the light emitting devices are disabled during the write subframe. The light emitting devices are enabled during the display subframe and the switching/driving transistor circuits are disabled. A rest pulse is supplied to all scan lines and the light emitting devices are disabled during the rest subframe.

摘要翻译： 一种驱动显示装置的方法包括提供包括行和列的像素的像素阵列，每个像素包括开关/驱动晶体管电路和至少一个发光器件。 每行像素具有扫描线，并且每列像素具有数据线。 该方法还包括定义帧期间，在该帧周期期间，像素阵列中的每个像素被寻址并且将帧周期划分为写子帧，显示子帧和剩余子帧。 向每条扫描线提供扫描脉冲，在写入子帧期间，对每个数据线的数据信号和发光器件禁用。 发光器件在显示子帧期间被使能，并且开关/驱动晶体管电路被禁止。 向所有扫描线提供静止脉冲，并且在其余子帧期间禁用发光装置。

公开(公告)号：US20110037054A1

公开(公告)日：2011-02-17

申请号：US12542599

申请日：2009-08-17

申请人： Chan-Long Shieh ,  Gang Yu

发明人： Chan-Long Shieh ,  Gang Yu

IPC分类号： H01L51/10 ,  H01L51/40

CPC分类号： H01L27/3244 ,  H01L27/3204 ,  H01L27/3246

摘要： An active matrix organic light emitting display includes a plurality of pixels with each pixel including at least one organic light emitting diode circuit. Each diode circuit producing a predetermined amount of light lm in response to power W applied to the circuit and including n organic light emitting diodes cascaded in series so as to increase voltage dropped across the cascaded diodes by the factor of n, where n is an integer greater than one. Each diode of the n organic light emitting diodes produces approximately 1/n of the predetermined amount of light lm so as to reduce current flowing in the diodes by 1/n. The organic light emitting diode circuit of each pixel includes a thin film transistor current driver with the cascaded diodes connected in the source/drain circuit so the current driver provides the current flowing in the diodes.

摘要翻译： 有源矩阵有机发光显示器包括多个像素，每个像素包括至少一个有机发光二极管电路。 每个二极管电路响应于施加到电路的功率W而产生预定量的光lm，并且包括串联级联的n个有机发光二极管，以便增加跨越级联二极管的电压以n为因子，其中n是整数 大于一。 n个有机发光二极管的每个二极管产生大约1 / n的预定量的光lm，以便将在二极管中流动的电流减少1 / n。 每个像素的有机发光二极管电路包括薄膜晶体管电流驱动器，其中级联二极管连接在源极/漏极电路中，因此电流驱动器提供流过二极管的电流。

公开(公告)号：US20100019656A1

公开(公告)日：2010-01-28

申请号：US12178209

申请日：2008-07-23

申请人： Gang Yu ,  Chan-Long Shieh

发明人： Gang Yu ,  Chan-Long Shieh

IPC分类号： H01L51/52 ,  B05D5/12 ,  H01J9/02

CPC分类号： H01L27/322 ,  H01L27/3244

摘要： A full-color active matrix organic light emitting display including a transparent substrate, a color filter positioned on an upper surface of the substrate, a spacer layer formed on the upper surface of the color filter, a metal oxide thin film transistor backpanel formed on the spacer layer and defining an array of pixels, and an array of single color, organic light emitting devices formed on the backpanel and positioned to emit light downwardly through the backpanel, the spacer layer, the color filter, and the substrate in a full-color display.

摘要翻译： 一种全色有源矩阵有机发光显示器，包括透明基板，位于基板上表面的滤色器，形成在滤色器上表面上的间隔层，金属氧化物薄膜晶体管背板 间隔层和限定像素阵列，以及形成在背板上的单色有机发光器件的阵列，并被定位成以全色的方式通过背板，间隔层，滤色器和衬底向下发光。 显示。

公开(公告)号：US20180108693A1

公开(公告)日：2018-04-19

申请号：US15296586

申请日：2016-10-18

申请人： Chan-Long Shieh ,  Gang Yu ,  Guangming Wang

发明人： Chan-Long Shieh ,  Gang Yu ,  Guangming Wang

IPC分类号： H01L27/146

CPC分类号： H01L27/14616 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14658 ,  H01L27/14689 ,  H01L27/1469 ,  H01L27/14692

摘要： A method of fabricating a structure including a high mobility backplane and a-Si photodiode imager includes forming a matrix of metal oxide thin film transistors on the surface of a rigid support member, depositing a planarizing layer on the matrix of transistors that is either porous or permissive/diffusive to oxygen at temperatures below approximately 200° C., and fabricating a matrix of passivated a-Si photodiodes over the matrix of transistors and electrically connected one each photodiode to each of the transistors. A continuous path is provided through the planarizing layer from the exterior of the structure to each of the transistors and the structure is annealed at a temperature below 200° C. in an oxygen ambient to move oxygen from the oxygen ambient to an active layer of each of the transistors and repair loss of oxygen damage to the transistors caused by the fabrication of the passivated a-Si photodiodes.

公开(公告)号：US20160247704A1

公开(公告)日：2016-08-25

申请号：US15143748

申请日：2016-05-02

申请人： Chan-Long Shieh ,  Gang Yu

发明人： Chan-Long Shieh ,  Gang Yu

IPC分类号： H01L21/683 ,  H01L21/687 ,  H01L25/075 ,  H01L27/12 ,  H01L33/44 ,  H01L33/58 ,  H01L33/62 ,  H01L21/677 ,  H01L25/00

CPC分类号： H01L21/6836 ,  H01L21/67144 ,  H01L21/67721 ,  H01L21/68757 ,  H01L21/68778 ,  H01L25/042 ,  H01L25/0753 ,  H01L25/50 ,  H01L27/1222 ,  H01L27/1225 ,  H01L31/18 ,  H01L33/0095 ,  H01L33/44 ,  H01L33/58 ,  H01L33/62 ,  H01L2224/83 ,  H01L2224/95 ,  H01L2225/06527 ,  H01L2225/06555 ,  H01L2924/0002 ,  H01L2933/0025 ,  H01L2933/0058 ,  H01L2933/0066 ,  Y10T156/171 ,  H01L2924/00

摘要： A method of dispersing semiconductor chips from a wafer of semiconductor chips onto a substrate while preserving the neighboring relationship of each chip to each adjacent chip is disclosed. The method includes dispersing the wafer into sequential columns of semiconductor chips with a first pitch between columns while preserving the neighboring relationship and sequentially dispersing the columns of semiconductor chips into rows of individual chips with a second pitch between rows onto a substrate while preserving the neighboring relationship.

摘要翻译： 公开了将半导体芯片从半导体芯片的晶片分散到基板上同时保持每个芯片与每个相邻芯片的相邻关系的方法。 该方法包括将晶片分散在具有列之间的第一间距的顺序的半导体芯片列中，同时保持相邻关系，并将半导体芯片的列顺序地分散到具有行之间的第二间距的单个芯片行到基板上，同时保持相邻关系 。

公开(公告)号：US09401431B2

公开(公告)日：2016-07-26

申请号：US13366503

申请日：2012-02-06

申请人： Chan-Long Shieh ,  Gang Yu

发明人： Chan-Long Shieh ,  Gang Yu

IPC分类号： H01L21/04 ,  H01L21/02 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L29/45

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/1225 ,  H01L27/1259 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78606

摘要： A method of fabricating metal oxide TFTs on transparent substrates includes the steps of positioning an opaque gate metal area on the front surface of the substrate, depositing transparent gate dielectric and transparent metal oxide semiconductor layers overlying the gate metal and a surrounding area, depositing transparent passivation material on the semiconductor material, depositing photoresist on the passivation material, exposing and developing the photoresist to remove exposed portions, etching the passivation material to leave a passivation area defining a channel area, depositing transparent conductive material over the passivation area, depositing photoresist over the conductive material, exposing and developing the photoresist to remove unexposed portions, and etching the conductive material to leave source and drain areas on opposed sides of the channel area.

摘要翻译： 在透明基板上制造金属氧化物TFT的方法包括以下步骤：在衬底的前表面上定位不透明栅极金属区域，沉积覆盖栅极金属和周围区域的透明栅极电介质和透明金属氧化物半导体层，沉积透明钝化 在所述半导体材料上沉积光致抗蚀剂，在所述钝化材料上沉积光致抗蚀剂，曝光和显影所述光致抗蚀剂以去除暴露部分，蚀刻所述钝化材料以留下限定沟道区的钝化区，在所述钝化区上沉积透明导电材料， 导电材料，曝光和显影光致抗蚀剂以去除未曝光部分，并且蚀刻导电材料以在沟道区域的相对侧上留下源极和漏极区域。

公开(公告)号：US09397282B2

公开(公告)日：2016-07-19

申请号：US14620910

申请日：2015-02-12

申请人： Chan-Long Shieh ,  Gang Yu

发明人： Chan-Long Shieh ,  Gang Yu

IPC分类号： H01L21/00 ,  H01L33/64 ,  H01L27/12 ,  H01L33/00 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62 ,  H01L31/0368 ,  H01L27/146 ,  H01L31/0376 ,  H01L31/20

CPC分类号： H01L33/642 ,  H01L23/3677 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1262 ,  H01L27/1463 ,  H01L27/14663 ,  H01L27/14692 ,  H01L31/0368 ,  H01L31/0376 ,  H01L31/20 ,  H01L33/0075 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2933/0075

摘要： A method of fabricating a pixelated projector display includes providing a wafer with a supporting substrate, a first semiconductive layer, an emission layer, and a second semiconductive layer. The wafer is patterned into an array of LEDs/LDs and a planarization layer is deposited over the array. One via for each LED/LD element is formed through the planarization layer. A MOTFT backplane is positioned on the planarization layer, one driver circuit in controlling electrical communication with each via through the planarization layer. A passivation layer is deposited over the MOTFT backplane and heat plugs are extended through the passivation layer, the MOTFT backplane, the planarization layer, and the III-V LED/LD wafer partially through the first semiconductive layer to thermally couple heat from the array of LEDs/LDs to the surface of the passivation layer. An upper end of the heat plugs is accessible for thermal coupling to a heat spreader and/or a heatsink.

摘要翻译： 制造像素化投影仪显示器的方法包括向晶片提供支撑衬底，第一半导体层，发射层和第二半导体层。 将晶片图案化成LED / LD阵列，并且平坦化层沉积在阵列上。 通过平坦化层形成每个LED / LD元件的一个通孔。 MFTFT背板位于平坦化层上，一个驱动电路通过平坦化层控制与每个通孔的电连通。 钝化层沉积在MOTFT背板上，并且热插塞通过钝化层，MOTFT背板，平坦化层和III-V LED / LD晶片部分延伸穿过第一半导体层，以热耦合来自 LED / LDs到钝化层的表面。 散热器和/或散热器的热连接可以接近热塞的上端。

公开(公告)号：US09331230B2

公开(公告)日：2016-05-03

申请号：US13663519

申请日：2012-10-30

申请人： Chan-Long Shieh ,  Gang Yu

发明人： Chan-Long Shieh ,  Gang Yu

IPC分类号： H05K3/30 ,  H01L31/18 ,  H01L21/67 ,  H01L33/00 ,  H01L25/04 ,  H01L25/075

CPC分类号： H01L21/6836 ,  H01L21/67144 ,  H01L21/67721 ,  H01L21/68757 ,  H01L21/68778 ,  H01L25/042 ,  H01L25/0753 ,  H01L25/50 ,  H01L27/1222 ,  H01L27/1225 ,  H01L31/18 ,  H01L33/0095 ,  H01L33/44 ,  H01L33/58 ,  H01L33/62 ,  H01L2224/83 ,  H01L2224/95 ,  H01L2225/06527 ,  H01L2225/06555 ,  H01L2924/0002 ,  H01L2933/0025 ,  H01L2933/0058 ,  H01L2933/0066 ,  Y10T156/171 ,  H01L2924/00

摘要： A method of dispersing semiconductor chips from a wafer of semiconductor chips onto a substrate while preserving the neighboring relationship of each chip to each adjacent chip is disclosed. The method includes dispersing the wafer into sequential columns of semiconductor chips with a first pitch between columns while preserving the neighboring relationship and sequentially dispersing the columns of semiconductor chips into rows of individual chips with a second pitch between rows onto a substrate while preserving the neighboring relationship.

摘要翻译： 公开了将半导体芯片从半导体芯片的晶片分散到基板上同时保持每个芯片与每个相邻芯片的相邻关系的方法。 该方法包括将晶片分散在具有列之间的第一间距的顺序的半导体芯片列中，同时保持相邻关系，并将半导体芯片的列顺序地分散到具有行之间的第二间距的单个芯片行到基板上，同时保持相邻关系 。

公开(公告)号：US09306078B2

公开(公告)日：2016-04-05

申请号：US12206615

申请日：2008-09-08

申请人： Chan-Long Shieh ,  Gang Yu

发明人： Chan-Long Shieh ,  Gang Yu

IPC分类号： H01L29/10 ,  H01L29/786 ,  H01L21/02 ,  H01L29/04 ,  H01L27/12 ,  H01L21/285 ,  H01L51/50 ,  H01L21/00 ,  H01L21/16

CPC分类号： H01L29/04 ,  H01L21/00 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02592 ,  H01L21/16 ,  H01L21/28556 ,  H01L27/1214 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/7869 ,  H01L29/78693 ,  H01L51/5012

摘要： A thin film semiconductor device has a semiconductor layer including a mixture of an amorphous semiconductor ionic metal oxide and an amorphous insulating covalent metal oxide. A pair of terminals is positioned in communication with the semiconductor layer and define a conductive channel, and a gate terminal is positioned in communication with the conductive channel and further positioned to control conduction of the channel. The invention further includes a method of depositing the mixture including using nitrogen during the deposition process to control the carrier concentration in the resulting semiconductor layer.

公开(公告)号：US08962377B2

公开(公告)日：2015-02-24

申请号：US13713744

申请日：2012-12-13

申请人： Chan-Long Shieh ,  Gang Yu

发明人： Chan-Long Shieh ,  Gang Yu

IPC分类号： H01L21/00 ,  H01L31/20 ,  H01L31/0368 ,  H01L31/0376

CPC分类号： H01L31/20 ,  H01L27/1225 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14663 ,  H01L27/14687 ,  H01L27/14692 ,  H01L31/0368 ,  H01L31/0376 ,  Y02E10/50

摘要： A method of fabricating a pixelated imager includes providing a substrate with bottom contact layer and sensing element blanket layers on the contact layer. The blanket layers are separated into an array of sensing elements by trenches isolating adjacent sensing elements. A sensing element electrode is formed adjacent each sensing element overlying a trench and defining a TFT. A layer of metal oxide semiconductor (MOS) material is formed on a dielectric layer overlying the electrodes and on an exposed upper surface of the blanket layers defining the sensing element adjacent each TFT. A layer of metal is deposited on each TFT and separated into source/drain electrodes on opposite sides of the sensing element electrode. The metal forming one of the S/D electrodes contacts the MOS material overlying the exposed surface of the semiconductor layer, whereby each sensing element in the array is electrically connected to the adjacent TFT by the MOS material.

摘要翻译： 制造像素化成像器的方法包括在接触层上提供底层接触层和感测元件覆盖层。 橡皮布层通过隔离相邻感测元件的沟槽分离成感测元件的阵列。 感测元件电极邻近覆盖沟槽的每个感测元件形成并且限定TFT。 一层金属氧化物半导体（MOS）材料形成在覆盖电极的电介质层上，并且在覆盖层的暴露的上表面上形成与每个TFT相邻的感测元件。 一层金属沉积在每个TFT上，并分离成在感测元件电极的相对侧上的源极/漏极。 形成S / D电极之一的金属接触覆盖半导体层的暴露表面的MOS材料，由此阵列中的每个感测元件通过MOS材料电连接到相邻的TFT。