公开(公告)号：US07387717B2

公开(公告)日：2008-06-17

申请号：US10631726

申请日：2003-08-01

申请人： Junji Kunisawa ,  Mitsuko Odagaki ,  Natsuki Makino ,  Koji Mishima ,  Kenji Nakamura ,  Hiroaki Inoue ,  Norio Kimura ,  Tetsuo Matsuda ,  Hisashi Kaneko ,  Nobuo Hayasaka ,  Katsuya Okumura ,  Manabu Tsujimura ,  Toshiyuki Morita

发明人： Junji Kunisawa ,  Mitsuko Odagaki ,  Natsuki Makino ,  Koji Mishima ,  Kenji Nakamura ,  Hiroaki Inoue ,  Norio Kimura ,  Tetsuo Matsuda ,  Hisashi Kaneko ,  Nobuo Hayasaka ,  Katsuya Okumura ,  Manabu Tsujimura ,  Toshiyuki Morita

IPC分类号： C25D7/12

CPC分类号： H01L21/6719 ,  C25D7/123 ,  C25D17/001 ,  C25D17/12 ,  C25D17/14 ,  H01L21/2885 ,  H01L21/67046 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/6715 ,  H01L21/6723 ,  H01L21/76877 ,  H01L21/76879 ,  H01L2924/0002 ,  H05K3/423 ,  H01L2924/00

摘要： A plating method and apparatus for a substrate fills a metal, e.g., copper, into a fine interconnection pattern formed in a semiconductor substrate. The apparatus has a substrate holding portion 36 horizontally holding and rotating a substrate with its surface to be plated facing upward. A seal material 90 contacts a peripheral edge portion of the surface, sealing the portion in a watertight manner. A cathode electrode 88 passes an electric current upon contact with the substrate. A cathode portion 38 rotates integrally with the substrate holding portion 36. An electrode arm portion 30 is above the cathode portion 38 and movable horizontally and vertically and has an anode 98 face-down. Plating liquid is poured into a space between the surface to be plated and the anode 98 brought close to the surface to be plated. Thus, plating treatment and treatments incidental thereto can be performed by a single unit.

摘要翻译： 用于衬底的电镀方法和装置将诸如铜的金属填充到形成在半导体衬底中的精细互连图案中。 该装置具有基板保持部分36，其水平地保持并旋转基板，其表面被面向上。 密封材料90接触表面的周缘部分，以水密的方式密封该部分。 阴极电极88在与基板接触时通过电流。 阴极部38与基板保持部36一体地旋转。电极臂部30在阴极部38的上方，水平且垂直地移动，阳极98面朝下。 将电镀液注入被镀表面与接近待镀表面的阳极98之间的空间中。 因此，电镀处理和附带的处理可以通过单个单元进行。

公开(公告)号：US20080090001A1

公开(公告)日：2008-04-17

申请号：US11987653

申请日：2007-12-03

申请人： Shinichi Ito ,  Tatsuhiko Ema ,  Kei Hayasaki ,  Rempei Nakata ,  Nobuhide Yamada ,  Katsuya Okumura

发明人： Shinichi Ito ,  Tatsuhiko Ema ,  Kei Hayasaki ,  Rempei Nakata ,  Nobuhide Yamada ,  Katsuya Okumura

IPC分类号： C23C14/54 ,  B05C11/00

CPC分类号： H01L21/6715 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/288 ,  H01L21/31633

摘要： There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10−5 qγ (mm) given with respect to a surface tension γ (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10−5 (m·sec/N).

摘要翻译： 公开了一种成膜方法，其特征在于，连续地排出通过设置在喷嘴中的排出口将调整后的液体以一定量向基板扩散至基板，使喷嘴和基板相对移动， 将所述溶液供给到所述基板上以形成液膜，其中所述喷嘴的排出口与所述基板之间的距离h被设定为不小于2mm并且在小于5×10 -5的范围内， 相对于溶液的表面张力γ（N / m）给出的SUP> qgamma（mm），通过排出口连续排出的溶液的排出速度q（m / sec）和5×10 -6 5（m.sec / N）。

公开(公告)号：US20070275178A1

公开(公告)日：2007-11-29

申请号：US11630440

申请日：2005-07-13

申请人： Takanori Nishi ,  Takahiro Kitano ,  Katsuya Okumura

发明人： Takanori Nishi ,  Takahiro Kitano ,  Katsuya Okumura

IPC分类号： B05D1/18 ,  B05B5/00

CPC分类号： G03F7/38 ,  H01L21/67109 ,  H01L21/67748

摘要： A substrate heating apparatus for heating a substrate coated with a film of chemically amplified resist within a period after exposure and before development, having a mounting table to mount the substrate substantially horizontal with the resist-coated film faced up, a fluid supply mechanism for supplying glycerin to the substrate, and a heating mechanism for heating the substrate on a mounting table, in a state that glycerin contacts a resist-coated film, wherein the substrate on a mounting table is heated, in a state that glycerin contacts the resist-coated film.

摘要翻译： 一种基板加热装置，用于在曝光和显影之前的一段时间内加热涂覆有化学放大型抗蚀剂膜的基板，该基板加热装置具有安装台，用于将基板保持在水平面上，使抗蚀剂涂覆膜面朝上;流体供应机构，用于供应 甘油与基材的加热机构，以及加热机构，其用于在甘油接触抗蚀剂涂布膜的状态下将载体加热到安装台上，其中，在甘油接触抗蚀剂涂布的状态下，将载置台上的基板加热 电影。

公开(公告)号：US20070181556A1

公开(公告)日：2007-08-09

申请号：US11508156

申请日：2006-08-23

申请人： Yoshiki Yamanishi ,  Muneo Harada ,  Takahiro Kitano ,  Tatsuzo Kawaguchi ,  Yoshihiro Hirota ,  Kenji Matsuda ,  Kinji Yamada ,  Tomotaka Shinoda ,  Daohai Wang ,  Katsuya Okumura

发明人： Yoshiki Yamanishi ,  Muneo Harada ,  Takahiro Kitano ,  Tatsuzo Kawaguchi ,  Yoshihiro Hirota ,  Kenji Matsuda ,  Kinji Yamada ,  Tomotaka Shinoda ,  Daohai Wang ,  Katsuya Okumura

IPC分类号： F27B5/14

CPC分类号： H01L28/55

摘要： Atmosphere in processing apparatus is adjusted to, for example, oxygen atmosphere, by gas supply source and the like. Interior of thermal processing apparatus is set to oxygen atmosphere and raised to predetermined temperature. A wafer boat containing wafer W having dielectric precursor layer formed is loaded into thermal processing apparatus at speed at which no defects are produced in wafer W. Thereafter, reaction tube of thermal processing apparatus has its internal temperature raised to baking temperature, to perform baking for predetermined time. The wafer W is cooled to predetermined temperature in thermal processing apparatus and then to room temperature in processing apparatus, and carried out from processing apparatus. Before dielectric precursor layer is baked, it is maintained for predetermined time at temperature higher than temperature at which solvent in dielectric precursor layer is volatilized and lower than temperature at which dielectric precursor layer starts crystallization to vaporize residual solvent.

摘要翻译： 处理装置中的气氛通过气体供给源等调节为例如氧气氛。 热处理装置的内部设定为氧气氛并升温至规定温度。 包含形成有电介质前体层的晶片W的晶片舟以晶片W中没有产生缺陷的速度装载到热处理装置中。之后，热处理装置的反应管的内部温度升高到烘烤温度，进行烘烤 预定时间 将晶片W在热处理装置中冷却至规定温度，然后在处理装置中冷却至室温，并从处理装置进行。 在电介质前体层被烘烤之前，在高于电介质前体层中的溶剂挥发并且低于电介质前体层开始结晶以蒸发残留溶剂的温度的温度下将其保持预定时间。

公开(公告)号：US20070122291A1

公开(公告)日：2007-05-31

申请号：US11581464

申请日：2006-10-17

申请人： Katsuya Okumura ,  Tetsuya Toyoda ,  Tomohiro Ito ,  Akira Murakumo ,  Atsuyuki Sakai

发明人： Katsuya Okumura ,  Tetsuya Toyoda ,  Tomohiro Ito ,  Akira Murakumo ,  Atsuyuki Sakai

IPC分类号： F04B49/00

CPC分类号： F04B49/08

摘要： [Problem] To always perform accurate pressure feedback control, and control the discharge flow rate of liquid chemical with high precision, even in situations in which the pressure setting value of the operation pressure differs due to changes in the type of liquid chemical, etc. [Means of solution] A pump 11 has a pump chamber 13 and an operation chamber 14 separated by a diaphragm 12 comprised of a flexible membrane, and performs the intake and discharge of liquid chemical in accordance with the change in pressure inside the operation chamber 14. An electro-pneumatic regulator 32 supplies operation air to the operation chamber 14. In addition, in the present system, a plurality of pressure sensors 51, 63 having different pressure detection ranges is provided as pressure detection means for detecting the operation air pressure. A controller 40 selectively employs any of the detection results of the plurality of sensors 51, 63 in accordance with the pressure setting value of the operation air that is set for each use, and performs pressure feedback control.

摘要翻译： [问题]为了始终进行精确的压力反馈控制，并且即使在由于液体化学品的类型的变化而导致的操作压力的设定值不同的情况下也能够高精度地控制液体化学品的排出流量。 [解决方案]泵11具有由柔性膜构成的隔膜12隔开的泵室13和操作室14，并根据操作室14内的压力变化进行液体化学品的进出。 。 电动气动调节器32将操作空气供给到操作室14。 此外，在本系统中，具有不同压力检测范围的多个压力传感器51,63被设置为用于检测操作空气压力的压力检测装置。 控制器40根据为每次使用设定的操作空气的压力设定值选择性地使用多个传感器51,63的检测结果中的任一个，并进行压力反馈控制。

公开(公告)号：US07084005B2

公开(公告)日：2006-08-01

申请号：US10855889

申请日：2004-05-28

申请人： Katsuya Okumura ,  Koji Maruyama ,  Kazuya Nagaseki ,  Akiteru Rai

发明人： Katsuya Okumura ,  Koji Maruyama ,  Kazuya Nagaseki ,  Akiteru Rai

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00 ,  H01L2924/00012

摘要： The present invention relates to a semiconductor device in which an electrode of a device formed on a substrate such as a semiconductor wafer and an electrode of a wiring structure such as an interposer are connected to each other through a connecting electrode extending through the substrate, and a method of manufacturing the same. A semiconductor device according to the present invention includes a first substrate including a front surface and a back surface, a first device having a first electrode being formed on the front surface; and a wiring structure formed with a second electrode, the wiring structure having a principal surface. The first electrode of the first device and the second electrode of the wiring structure are connected to each other by a connecting electrode extending through the first substrate from the front surface to the back surface thereof. Substantially all the back surface of the first substrate is bonded to the principal surface of the wiring structure. A dielectric film formed between the first substrate and the wiring structure may be an adhesive layer.

摘要翻译： 本发明涉及一种半导体器件，其中形成在诸如半导体晶片的基板上的器件的电极和诸如中介层之类的布线结构的电极通过延伸穿过衬底的连接电极相互连接， 其制造方法。 根据本发明的半导体器件包括：第一衬底，其包括前表面和后表面;第一器件，具有形成在前表面上的第一电极; 以及形成有第二电极的布线结构，所述布线结构具有主表面。 第一器件的第一电极和布线结构的第二电极通过从第一衬底的前表面延伸到后表面的连接电极彼此连接。 基本上所有的第一基板的所有后表面被结合到布线结构的主表面。 形成在第一基板和布线结构之间的电介质膜可以是粘合剂层。

公开(公告)号：US20060131696A1

公开(公告)日：2006-06-22

申请号：US11350027

申请日：2006-02-09

申请人： Tsunetoshi Arikado ,  Masao Iwase ,  Soichi Nadahara ,  Yuso Udo ,  Yukihiro Ushiku ,  Shinichi Nitta ,  Moriya Miyashita ,  Junji Sugamoto ,  Hiroaki Yamada ,  Hajime Nagano ,  Katsujiro Tanzawa ,  Hiroshi Matsushita ,  Norihiko Tsuchiya ,  Katsuya Okumura

发明人： Tsunetoshi Arikado ,  Masao Iwase ,  Soichi Nadahara ,  Yuso Udo ,  Yukihiro Ushiku ,  Shinichi Nitta ,  Moriya Miyashita ,  Junji Sugamoto ,  Hiroaki Yamada ,  Hajime Nagano ,  Katsujiro Tanzawa ,  Hiroshi Matsushita ,  Norihiko Tsuchiya ,  Katsuya Okumura

IPC分类号： H01L29/06 ,  H01L23/02

CPC分类号： H01L23/544 ,  H01L2223/54406 ,  H01L2223/54413 ,  H01L2223/54433 ,  H01L2223/54493 ,  H01L2924/0002 ,  Y10S438/974 ,  H01L2924/00

摘要： A semiconductor wafer has a bevel contour formed along the periphery thereof, products formed on the wafer, and an ID mark formed on the bevel contour. The ID mark shows at least the properties, manufacturing conditions, and test results of the products.

公开(公告)号：US07057259B2

公开(公告)日：2006-06-06

申请号：US10101337

申请日：2002-03-20

申请人： Tsunetoshi Arikado ,  Masao Iwase ,  Soichi Nadahara ,  Yuso Udo ,  Yukihiro Ushiku ,  Shinichi Nitta ,  Moriya Miyashita ,  Junji Sugamoto ,  Hiroaki Yamada ,  Hajime Nagano ,  Katsujiro Tanzawa ,  Hiroshi Matsushita ,  Norihiko Tsuchiya ,  Katsuya Okumura

发明人： Tsunetoshi Arikado ,  Masao Iwase ,  Soichi Nadahara ,  Yuso Udo ,  Yukihiro Ushiku ,  Shinichi Nitta ,  Moriya Miyashita ,  Junji Sugamoto ,  Hiroaki Yamada ,  Hajime Nagano ,  Katsujiro Tanzawa ,  Hiroshi Matsushita ,  Norihiko Tsuchiya ,  Katsuya Okumura

IPC分类号： H01L29/06

CPC分类号： H01L23/544 ,  H01L2223/54406 ,  H01L2223/54413 ,  H01L2223/54433 ,  H01L2223/54493 ,  H01L2924/0002 ,  Y10S438/974 ,  H01L2924/00

摘要： A semiconductor wafer has a bevel contour formed along the periphery thereof, products formed on the wafer, and an ID mark formed on the bevel contour. The ID mark shows at least the properties, manufacturing conditions, and test results of the products.

公开(公告)号：US20050276928A1

公开(公告)日：2005-12-15

申请号：US11195803

申请日：2005-08-03

申请人： Katsuya Okumura ,  Shinji Himori ,  Kazuya Nagaseki ,  Hiroki Matsumaru ,  Shoichiro Matsuyama ,  Toshiki Takahashi

发明人： Katsuya Okumura ,  Shinji Himori ,  Kazuya Nagaseki ,  Hiroki Matsumaru ,  Shoichiro Matsuyama ,  Toshiki Takahashi

IPC分类号： H05H1/46 ,  B01J19/08 ,  C23C14/00 ,  C23F4/00 ,  C25D17/10 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065

CPC分类号： H01L21/3065 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/32541

摘要： A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply system is configured to supply a process gas into the process container. An electric field formation system is configured to form an RF electric field within the process container so as to generate plasma of the process gas. A number of protrusions are discretely disposed on a main surface of the first electrode and protrude toward a space where the plasma is generated.

摘要翻译： 用于在目标衬底上执行等离子体处理的等离子体处理装置包括：配置成容纳目标衬底并减少其中的压力的​​处理容器。 第一电极设置在处理容器内。 供应系统被配置为将处理气体供应到处理容器中。 电场形成系统被配置为在处理容器内形成RF电场，以产生处理气体的等离子体。 多个突起离散地设置在第一电极的主表面上，朝向产生等离子体的空间突出。

公开(公告)号：US20050244049A1

公开(公告)日：2005-11-03

申请号：US11097139

申请日：2005-04-04

申请人： Hiroyuki Onishi ,  Yasushi Sasa ,  Manabu Tsujimura ,  Toshifumi Kinba ,  Katsuya Okumura

发明人： Hiroyuki Onishi ,  Yasushi Sasa ,  Manabu Tsujimura ,  Toshifumi Kinba ,  Katsuya Okumura

IPC分类号： G01N23/225 ,  G06K9/00 ,  G06T1/00 ,  G06T5/00 ,  G06T7/00 ,  H01L21/66

CPC分类号： H01J37/26 ,  G06T7/001 ,  G06T2207/30148 ,  H01J37/222 ,  H01J37/29 ,  H01J2237/24592

摘要： In a pattern inspection apparatus (1), an electron beam emission part (31) emits an electron beam onto a substrate (9) and an image acquisition part (33) detects electrons from the substrate (9) to acquire a grayscale inspection image of the substrate (9). A binary reference image generated from design data (81) is multivalued by a grayscale image generator (52) on the basis of a histogram of pixel values in the inspection image to generate a grayscale reference image. A comparator (53) compares the inspection image with the reference image. The pattern inspection apparatus (1) can thereby perform an inspection of a very small pattern on the substrate (9) on the basis of the design data (81).

摘要翻译： 在图案检查装置（1）中，电子束发射部（31）将电子束发射到基板（9）上，图像获取部（33）从基板（9）检测电子，获得灰度检查图像 基板（9）。 基于检查图像中的像素值的直方图，通过灰度图像生成器（52）将从设计数据（81）生成的二进制参考图像多值化以生成灰度参考图像。 比较器（53）将检查图像与参考图像进行比较。 因此，图案检查装置（1）能够基于设计数据（81）在基板（9）上进行非常小的图案的检查。