公开(公告)号：US10421665B2

公开(公告)日：2019-09-24

申请号：US16183192

申请日：2018-11-07

Applicant: Infineon Technologies AG

Inventor： Guenther Ruhl ,  Matthias Koenig

IPC: C01B32/194 ,  G01R33/07 ,  B81C1/00 ,  H04R19/01

Abstract: A process for the formation of a graphene membrane component includes arranging a graphene membrane in a relaxed condition of the graphene membrane on a surface of a supportive substrate. The graphene membrane extends across a cut-out with an opening at the surface of the supportive substrate. The graphene membrane is moreover arranged so that a first portion of the graphene membrane is arranged on the surface of the supportive substrate and a second portion of the graphene membrane is arranged over the opening of the cut-out. The process further includes tensioning of the second portion of the graphene membrane, in order to convert the second portion of the graphene membrane to a tensioned condition, so that the second portion of the graphene membrane is permanently in the tensioned condition in an operating temperature range of the graphene membrane component.

公开(公告)号：US20190244850A1

公开(公告)日：2019-08-08

申请号：US16264265

申请日：2019-01-31

Applicant: Infineon Technologies AG

Inventor： Rudolf Berger ,  Wolfgang Lehnert ,  Gerhard Metzger-Brueckl ,  Guenther Ruhl ,  Roland Rupp

IPC: H01L21/683 ,  H01L21/02

CPC classification number: H01L21/6835 ,  H01L21/02002 ,  H01L29/66712 ,  H01L29/7813 ,  H01L2221/68318 ,  H01L2221/6835 ,  H01L2221/68381

Abstract: This application relates to a method for producing a semiconductor component, in which a wafer composite is provided. The wafer composite includes a donor substrate, an auxiliary substrate and a separation layer arranged between the auxiliary substrate and the donor substrate. The separation layer has a support structure and sacrificial material, which is formed laterally between elements of the support structure. The auxiliary substrate is separated from the donor substrate. The separation includes a selective removal of the sacrificial material in relation to the support structure.

公开(公告)号：US10150674B2

公开(公告)日：2018-12-11

申请号：US15872772

申请日：2018-01-16

Applicant: Infineon Technologies AG

Inventor： Guenther Ruhl ,  Matthias Koenig

IPC: C01B32/194 ,  B81C1/00 ,  G01R33/07 ,  H04R19/01

Abstract: A process for the formation of a graphene membrane component includes arranging a graphene membrane in a relaxed condition of the graphene membrane on a surface of a supportive substrate. The graphene membrane extends across a cut-out with an opening at the surface of the supportive substrate. The graphene membrane is moreover arranged so that a first portion of the graphene membrane is arranged on the surface of the supportive substrate and a second portion of the graphene membrane is arranged over the opening of the cut-out. The process further includes tensioning of the second portion of the graphene membrane, in order to convert the second portion of the graphene membrane to a tensioned condition, so that the second portion of the graphene membrane is permanently in the tensioned condition in an operating temperature range of the graphene membrane component.

公开(公告)号：US20180201511A1

公开(公告)日：2018-07-19

申请号：US15872772

申请日：2018-01-16

Applicant: Infineon Technologies AG

Inventor： Guenther Ruhl ,  Matthias Koenig

IPC: C01B32/194

CPC classification number: C01B32/194 ,  B81C1/00658 ,  C01B2204/02 ,  C01B2204/22 ,  G01R33/07 ,  H04R19/016

Abstract: A process for the formation of a graphene membrane component includes arranging a graphene membrane in a relaxed condition of the graphene membrane on a surface of a supportive substrate. The graphene membrane extends across a cut-out with an opening at the surface of the supportive substrate. The graphene membrane is moreover arranged so that a first portion of the graphene membrane is arranged on the surface of the supportive substrate and a second portion of the graphene membrane is arranged over the opening of the cut-out. The process further includes tensioning of the second portion of the graphene membrane, in order to convert the second portion of the graphene membrane to a tensioned condition, so that the second portion of the graphene membrane is permanently in the tensioned condition in an operating temperature range of the graphene membrane component.

公开(公告)号：US10024831B2

公开(公告)日：2018-07-17

申请号：US14751660

申请日：2015-06-26

Applicant: Infineon Technologies AG

Inventor： Guenther Ruhl ,  Thomas Hirsch ,  Alexander Zoepfl

IPC: G01N33/00 ,  G01N27/12

Abstract: A gas sensor for measuring a concentration of carbon dioxide in a gas environment (GE) is provided. The gas sensor includes a graphene layer having a side facing towards the gas environment (GE), an electrode layer including a plurality of electrodes electrically connected to the graphene layer, and a chalcogenide layer covering at least a part of the side of the graphene layer facing towards the gas environment (GE).

公开(公告)号：US09972613B2

公开(公告)日：2018-05-15

申请号：US14796682

申请日：2015-07-10

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Guenther Ruhl ,  Hans-Joerg Timme

IPC: H01L29/06 ,  H01L27/02 ,  H01L23/373 ,  H01L23/367 ,  H01L23/427 ,  H01L23/495 ,  H01L29/78 ,  H01L29/739 ,  H01L29/861 ,  H01L27/24 ,  H01L45/00 ,  H01L29/43 ,  H01L23/62 ,  H01L23/525 ,  H01L23/00 ,  H01L29/417 ,  H01L29/423 ,  H01L29/16

CPC classification number: H01L27/0251 ,  H01L23/367 ,  H01L23/3738 ,  H01L23/427 ,  H01L23/4275 ,  H01L23/49562 ,  H01L23/525 ,  H01L23/62 ,  H01L24/32 ,  H01L27/24 ,  H01L27/2436 ,  H01L29/0634 ,  H01L29/1608 ,  H01L29/41725 ,  H01L29/42376 ,  H01L29/435 ,  H01L29/7393 ,  H01L29/7397 ,  H01L29/7801 ,  H01L29/7803 ,  H01L29/7813 ,  H01L29/7827 ,  H01L29/861 ,  H01L29/8611 ,  H01L45/128 ,  H01L2224/32245 ,  H01L2924/0002 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/00

Abstract: A semiconductor device includes a transistor having a plurality of transistor cells in a semiconductor body. Each transistor cell includes a control terminal and first and second load terminals. The transistor further includes a phase change material exhibiting a solid-solid phase change at a phase transition temperature Tc between 150° C. and 400° C. The control terminals of the plurality of transistor cells are electrically connected to one another.

公开(公告)号：US09793255B2

公开(公告)日：2017-10-17

申请号：US14595669

申请日：2015-01-13

Applicant: Infineon Technologies AG

Inventor： Joachim Mahler ,  Ralf Otremba ,  Hans-Joachim Schulze ,  Guenther Ruhl ,  Hans-Joerg Timme

IPC: H01L29/06 ,  H01L27/02 ,  H01L27/088 ,  H01L27/06 ,  H01L23/427 ,  H01L23/367 ,  H01L29/49 ,  H01L29/78 ,  H01L23/525 ,  H01L29/861 ,  H01L29/739

CPC classification number: H01L27/0248 ,  H01L23/3677 ,  H01L23/4275 ,  H01L23/525 ,  H01L27/0676 ,  H01L27/088 ,  H01L29/49 ,  H01L29/4983 ,  H01L29/7397 ,  H01L29/7813 ,  H01L29/8611 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A power semiconductor device includes a wiring structure adjoining at least one side of a semiconductor body and comprising at least one electrically conductive compound. The power semiconductor device further includes a cooling material in the wiring structure. The cooling material is characterized by a change in structure by means of absorption of energy at a temperature TC ranging between 150° C. and 400° C.

公开(公告)号：US20170288145A1

公开(公告)日：2017-10-05

申请号：US15626234

申请日：2017-06-19

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Peter Irsigler ,  Guenther Ruhl

IPC: H01L51/00

CPC classification number: H01L51/0048 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/16 ,  C01B32/184 ,  C01B32/188 ,  H01L21/02373 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02527 ,  H01L21/02587 ,  H01L21/02612 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/1606 ,  H01L29/66045 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/7781 ,  H01L51/0002 ,  H01L51/0026 ,  H01L51/003 ,  H01L51/0558 ,  H01L51/057 ,  Y10S977/742 ,  Y10S977/842 ,  Y10S977/932

Abstract: In various embodiments, a method of forming a graphene structure is provided. The method may include forming a body including at least one protrusion, and forming a graphene layer at an outer peripheral surface of the at least one protrusion.

公开(公告)号：US09748611B2

公开(公告)日：2017-08-29

申请号：US14311489

申请日：2014-06-23

Applicant: Infineon Technologies AG

Inventor： Klaus Elian ,  Jochen Dangelmaier ,  Manfred Fries ,  Juergen Hoegerl ,  Georg Meyer-Berg ,  Thomas Mueller ,  Guenther Ruhl ,  Horst Theuss ,  Mathias Vaupel

IPC: H01M10/48 ,  G01R31/36 ,  H01M6/50

CPC classification number: H01M10/48 ,  G01R31/3689 ,  H01M6/505 ,  H01M10/488

Abstract: An apparatus for determining a state of a rechargeable battery or of a battery has a sensor device and an evaluation device. The sensor device brings about an interaction between an optical signal and a part of the rechargeable battery or of the battery, which part indicates optically acquirable information about a state of the rechargeable battery or of the battery, and detects an optical signal caused by the interaction. The sensor device furthermore provides a detection signal having information about the detected optical signal. The evaluation device determines information about a state of the rechargeable battery or of the battery on the basis of the information of the detection signal. Furthermore, the evaluation device provides a state signal having the information about the determined state.

公开(公告)号：US09590044B2

公开(公告)日：2017-03-07

申请号：US13860612

申请日：2013-04-11

Applicant: Infineon Technologies AG

Inventor： Guenther Ruhl ,  Wolfgang Lehnert ,  Rudolf Berger

IPC: H01L29/76 ,  B82Y10/00 ,  H01L27/00 ,  H01L31/10 ,  B82Y20/00 ,  H01L29/16 ,  H01L29/40 ,  H01L29/778 ,  H01L29/861

CPC classification number: H01L29/1606 ,  H01L29/408 ,  H01L29/778 ,  H01L29/7788 ,  H01L29/7789 ,  H01L29/861

Abstract: In various embodiments, an electronic component is provided. The electronic component may include a dielectric structure; and a two-dimensional material containing structure over the dielectric structure. The dielectric structure is doped with dopants to change the electric characteristic of the two-dimensional material containing structure.

Abstract translation: 在各种实施例中，提供电子部件。 电子部件可以包括电介质结构; 以及在电介质结构上包含结构的二维材料。 电介质结构掺杂有掺杂剂以改变含二维材料结构的电特性。