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71.发明授权公开(公告)号：US11555256B2
公开(公告)日：2023-01-17
申请号：US16444147
申请日：2019-06-18
申请人： Robert T. Bondokov , James R. Grandusky , Jianfeng Chen , Shichao Wang , Toru Kimura , Thomas Miebach , Keisuke Yamaoka , Leo J. Schowalter
发明人： Robert T. Bondokov , James R. Grandusky , Jianfeng Chen , Shichao Wang , Toru Kimura , Thomas Miebach , Keisuke Yamaoka , Leo J. Schowalter
IPC分类号： C30B29/40 , H01L33/32 , C30B23/06 , C30B33/02 , C01B21/072
摘要： In various embodiments, single-crystal aluminum nitride boules and substrates have low Urbach energies and/or absorption coefficients at deep-ultraviolet wavelengths. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers.
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公开(公告)号：US11355664B2
公开(公告)日：2022-06-07
申请号：US16929634
申请日：2020-07-15
申请人： James R. Grandusky , Leo J. Schowalter , Craig Moe
发明人： James R. Grandusky , Leo J. Schowalter , Craig Moe
摘要： In various embodiments, extraction efficiency of light-emitting devices fabricated on aluminum nitride substrates is enhanced via removal of at least a portion of the substrate.
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公开(公告)号：US10971665B2
公开(公告)日：2021-04-06
申请号：US16801358
申请日：2020-02-26
摘要： In various embodiments, a rigid lens is attached to a light-emitting semiconductor die via a layer of encapsulant having a thickness insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die.
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公开(公告)号：US10446391B2
公开(公告)日：2019-10-15
申请号：US13298570
申请日：2011-11-17
IPC分类号： H01L29/06 , H01L21/02 , H01L33/12 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/02
摘要： In various embodiments, a semiconductor device includes an aluminum nitride single-crystal substrate, a pseudomorphic strained layer disposed thereover that comprises at least one of AlN, GaN, InN, or an alloy thereof, and, disposed over the strained layer, a semiconductor layer that is lattice-mismatched to the substrate and substantially relaxed.
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公开(公告)号：US10347805B2
公开(公告)日：2019-07-09
申请号：US15898347
申请日：2018-02-16
申请人： Ken Kitamura , Masato Toita , Hironori Ishii , Yuting Wang , Leo J. Schowalter , Jianfeng Chen , James R. Grandusky
发明人： Ken Kitamura , Masato Toita , Hironori Ishii , Yuting Wang , Leo J. Schowalter , Jianfeng Chen , James R. Grandusky
摘要： In various embodiments, a layer of organic encapsulant is provided over a surface of an ultraviolet (UV) light-emitting semiconductor die, and at least a portion of the encapsulant is exposed to UV light to convert at least some of said portion of the encapsulant into non-stoichiometric silica material. The non-stoichiometric silica material includes silicon, oxygen, and carbon, and a carbon content of the non-stoichiometric silica material is greater than 1 ppm and less than 40 atomic percent.
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76.发明授权公开(公告)号：US10106913B2
公开(公告)日：2018-10-23
申请号：US15410915
申请日：2017-01-20
摘要： In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.
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公开(公告)号：US20180190883A1
公开(公告)日：2018-07-05
申请号：US15898347
申请日：2018-02-16
申请人： Ken Kitamura , Masato Toita , Hironori Ishii , Yuting Wang , Leo J. Schowalter , Jianfeng Chen , James R. Grandusky
发明人： Ken Kitamura , Masato Toita , Hironori Ishii , Yuting Wang , Leo J. Schowalter , Jianfeng Chen , James R. Grandusky
CPC分类号： H01L33/56 , H01L33/54 , H01L33/58 , H01L2933/005 , H01L2933/0058
摘要： In various embodiments, a layer of organic encapsulant is provided over a surface of an ultraviolet (UV) light-emitting semiconductor die, and at least a portion of the encapsulant is exposed to UV light to convert at least some of said portion of the encapsulant into non-stoichiometric silica material. The non-stoichiometric silica material includes silicon, oxygen, and carbon, and a carbon content of the non-stoichiometric silica material is greater than 1 ppm and less than 40 atomic percent.
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78.发明申请GROWTH OF LARGE ALUMINUM NITRIDE SINGLE CRYSTALS WITH THERMAL-GRADIENT CONTROL 有权具有热梯度控制的大型氮化铝单晶的生长公开(公告)号：US20150218728A1
公开(公告)日：2015-08-06
申请号：US14686812
申请日：2015-04-15
CPC分类号： C30B23/002 , C30B23/06 , C30B29/403
摘要： In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.
摘要翻译： 在各种实施例中，在形成半导体晶体期间，在两个热梯度（平行于垂直）的比率小于10的生长室内形成基本平行且基本垂直于生长方向的生长室内的非零热梯度，其中两个热梯度（平行于垂直）的比例小于10， ，例如在生长室外设置热屏蔽。
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79.发明申请公开(公告)号：US20140264263A1
公开(公告)日：2014-09-18
申请号：US14208379
申请日：2014-03-13
CPC分类号： H01L33/0075 , H01L33/04 , H01L33/06 , H01L33/12 , H01L33/14 , H01L33/22 , H01L33/32 , H01L33/325 , H01L33/387 , H01L33/40 , H01L33/405 , H01L33/42 , H01L33/46 , H01L33/60 , H01L2933/0016 , H01L2933/0025 , H01L2933/0058
摘要： In various embodiments, light-emitting devices incorporate smooth contact layers and polarization doping (i.e., underlying layers substantially free of dopant impurities) and exhibit high photon extraction efficiencies.
摘要翻译： 在各种实施例中，发光器件包括平滑的接触层和偏振掺杂（即，基本上不含掺杂剂杂质的下层）并且表现出高的光子提取效率。
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公开(公告)号：US20100314551A1
公开(公告)日：2010-12-16
申请号：US12813293
申请日：2010-06-10
IPC分类号： C02F1/32
CPC分类号： C02F1/32 , C02F2201/3222 , C02F2201/326 , C02F2209/005 , C02F2303/04
摘要： A UV source is regulated according to one or more purification parameters to produce a desired germicidal effect in a liquid while minimizing wasted power.
摘要翻译： 根据一个或多个净化参数调节UV源以在液体中产生期望的杀菌效果，同时最小化浪费的功率。
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