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143 条记录 (耗时 0.042 秒)

    InP based high temperature lasers with InAsP quantum well layers and barrier layers of Gax(ALIn)1-xP
    72.
    发明授权
    InP based high temperature lasers with InAsP quantum well layers and barrier layers of Gax(ALIn)1-xP 失效
    基于InP的高温激光器，具有InAsP量子阱层和Gax（ALIn）1-xP的阻挡层

    公开(公告)号：US06730944B1

    公开(公告)日：2004-05-04

    申请号：US10354276

    申请日：2003-01-30

    申请人： Ashish Tandon ,  Ying-Ian Chang ,  Scott W. Corzine ,  David P. Bour ,  Michael R. T. Tan

    发明人： Ashish Tandon ,  Ying-Ian Chang ,  Scott W. Corzine ,  David P. Bour ,  Michael R. T. Tan

    IPC分类号： H01L2906

    CPC分类号： B82Y20/00 ,  H01S5/3406 ,  H01S5/3407 ,  H01S5/34306 ,  H01S5/3434 ,  H01S5/3436 ,  H01S2302/00

    摘要： The invention provides a laser structure that operates at a wavelength of 1.3 &mgr;m and at elevated temperatures and a method of making same. The laser structure includes a quantum well layer of InAsP. The quantum well layer is sandwiched between a first barrier layer and a second barrier layer. Each barrier layer exhibits a higher bandgap energy than the quantum well layer. Also, each barrier layer comprises Gax(AlIn)1−xP in which x 0. This material has a higher bandgap energy than conventional barrier layer materials, such as InGaP. The resulting larger conduction band discontinuity leads to improved high temperature performance without increasing the threshold current of the laser structure.

    摘要翻译： 本发明提供了在1.3μm波长和高温下工作的激光结构及其制造方法。 激光器结构包括InAsP的量子阱层。 量子阱层夹在第一阻挡层和第二阻挡层之间。 每个阻挡层表现出比量子阱层更高的带隙能量。 此外，每个阻挡层包括其中x 0的Gax（AlIn）1-xP。该材料具有比诸如InGaP的常规阻挡层材料更高的带隙能量。 所产生的更大的导带不连续性导致改善的高温性能而不增加激光器结构的阈值电流。

    Light-emitting devices including polycrystalline gan layers and method of forming devices
    74.
    发明授权
    Light-emitting devices including polycrystalline gan layers and method of forming devices 有权
    包括多晶层的发光器件和形成器件的方法

    公开(公告)号：US06288417B1

    公开(公告)日：2001-09-11

    申请号：US09226114

    申请日：1999-01-07

    申请人： Norbert H. Nickel ,  Christian G. Van de Walle ,  David P. Bour ,  Ping Mei

    发明人： Norbert H. Nickel ,  Christian G. Van de Walle ,  David P. Bour ,  Ping Mei

    IPC分类号： H01L3300

    CPC分类号： H01L33/18 ,  H01L33/32

    摘要： Polycrystalline group III-nitride semiconductor materials such as GaN and alloys of GaN and other group III-nitrides are deposited as layers on polycrystalline and non-crystalline substrates. The polycrystalline GaN layers can be formed by solid-phase crystallizing amorphous material or by directly depositing polycrystalline material on the substrates. The polycrystalline GaN material can be incorporated in light-emitting devices such as light-emitting diodes (LEDs). LED arrays can be formed on large-area substrates to provide large-area, full-color active-matrix displays.

    摘要翻译： 多晶III族氮化物半导体材料如GaN和GaN和其他III族氮化物的合金作为层沉积在多晶和非晶体衬底上。 多晶GaN层可以通过固相结晶的非晶材料或通过在基片上直接沉积多晶材料来形成。 多晶GaN材料可以结合在诸如发光二极管（LED）的发光器件中。 LED阵列可以形成在大面积基板上，以提供大面积的全色有源矩阵显示器。

    Fabrication of group III-V nitrides on mesas
    75.
    发明授权
    Fabrication of group III-V nitrides on mesas 失效
    在台面上制备III-V族氮化物

    公开(公告)号：US06163557A

    公开(公告)日：2000-12-19

    申请号：US82154

    申请日：1998-05-21

    申请人： Clarence J. Dunnrowicz ,  Linda T. Romano ,  David P. Bour

    发明人： Clarence J. Dunnrowicz ,  Linda T. Romano ,  David P. Bour

    IPC分类号： C30B25/02 ,  H01L21/20 ,  H01L33/00 ,  H01S5/02 ,  H01S5/323 ,  H01L31/0312 ,  H01S5/00

    CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L33/007 ,  H01S5/0207 ,  H01S5/0213 ,  H01S5/0217 ,  H01S5/3202 ,  H01S5/32341

    摘要： Group III-V nitride films are fabricated on mesas patterned either on substrates such as sapphire substrates, or on mesas patterned on group III-V nitride layers grown on substrates. The mesas provide reduced area surfaces for epitaxially growing group III-V nitride films, to reduce thermal film stresses in the films to reduce cracking. The surfaces of the mesas on which the films are grown are dimensioned and oriented to reduce the number of thin film crack planes that can grow on the mesas. Further cracking reduction in the films can be achieved by thinning the substrate to form membranes. The reduced substrate thickness at the membranes reduces the thermal expansion mismatch tensile stress in the films. The mesas can reduce or eliminate the occurrence of cracks in GaN or AlGaN epitaxial films grown on the mesas, for percentages of aluminum in the AlGaN films of up to about 18%. The improved group III-V nitride films can be used in optoelectronic devices including LEDs and edge and surface emitting laser diodes.

    摘要翻译： III-V族氮化物薄膜制造在图案化的基板上，例如蓝宝石衬底上，或者在生长在衬底上的III-V族氮化物层上图案化的台面上。 台面为外延生长的III-V族氮化物薄膜提供减少的面积表面，以减少薄膜中的热薄膜应力以减少开裂。 其上生长膜的台面的表面的尺寸和尺寸被定向以减少可以在台面上生长的薄膜裂纹平面的数量。 膜的进一步裂解减少可以通过使基材变薄以形成膜来实现。 在薄膜处降低的基底厚度降低了薄膜中的热膨胀失配拉伸应力。 台面可以减少或消除在台面上生长的GaN或AlGaN外延膜中的裂纹的发生，AlGaN膜中铝的百分比高达约18％。 改进的III-V族III族氮化物薄膜可用于包括LED和边缘和表面发射激光二极管在内的光电器件。

    Index guided semiconductor laser biode with shallow selective IILD
    77.
    发明授权
    Index guided semiconductor laser biode with shallow selective IILD 失效
    具有浅选择性IILD的折射率引导半导体激光生物

    公开(公告)号：US5832019A

    公开(公告)日：1998-11-03

    申请号：US345108

    申请日：1994-11-28

    申请人： Thomas L. Paoli ,  Robert L. Thornton ,  David P. Bour ,  David W. Treat

    发明人： Thomas L. Paoli ,  Robert L. Thornton ,  David P. Bour ,  David W. Treat

    IPC分类号： H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/34 ,  H01S5/343 ,  H01S3/18

    CPC分类号： B82Y20/00 ,  H01S5/20 ,  H01S5/34326 ,  H01S5/204 ,  H01S5/2059 ,  H01S5/22 ,  H01S5/3414

    摘要： An index-guided semiconductor laser diode made by impurity-induced layer disordering (IILD) of GaInP and AlGaInP heterostructures. In some embodiments, prior to the IILD, wing regions flanking an active mesa region are etched down close to the active layer so that the selective IILD involves a shallow diffusion only. High-performance, index-guided (AlGa).sub.0.5 In.sub.0.5 P lasers may be fabricated with this technique, analogous to those made in the AlGaAs material system. Also described are several techniques for reducing parasitic leakage current via the IILD regions, which include methods for providing p-n junctions or high band gap materials to reduce the parasitic leakage. In other embodiments, a planar structure is produced but with an ultra-thin upper cladding layer. Only a shallow IILD step is necessary to penetrate below the active region. Excessive out coupling and absorption losses are avoided by choosing materials that will minimize such losses, especially a pure gold metal coating as the p-contact metal.

    摘要翻译： 由GaInP和AlGaInP异质结构的杂质诱导层失调（IILD）制成的折射率引导半导体激光二极管。 在一些实施方案中，在IILD之前，侧翼于活性台面区域的翼区域被蚀刻到接近有源层，使得选择性IILD仅涉及浅扩散。 可以使用与AlGaAs材料系统中制造的那些类似的技术来制造高性能，折射率引导（AlGa）0.5In0.5P激光器。 还描述了用于减少经由IILD区域的寄生漏电流的几种技术，其包括用于提供p-n结或高带隙材料以减少寄生泄漏的方法。 在其他实施例中，制造平面结构，但是具有超薄上包层。 只有浅层的IILD步骤才能渗入活跃区域以下。 通过选择最小化这种损失的材料，特别是作为p-接触金属的纯金金属涂层，可避免过度的偶联和吸收损失。

    Loss-guided semiconductor lasers
    78.
    发明授权
    Loss-guided semiconductor lasers 失效
    损耗指导半导体激光器

    公开(公告)号：US5812576A

    公开(公告)日：1998-09-22

    申请号：US703293

    申请日：1996-08-26

    申请人： David P. Bour

    发明人： David P. Bour

    IPC分类号： H01L33/00 ,  H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S5/343 ,  H01S5/40 ,  H01S3/19

    CPC分类号： H01S5/4031 ,  H01S5/2231 ,  H01S5/2004 ,  H01S5/205 ,  H01S5/2206 ,  H01S5/32341

    摘要： The present invention relates to a short-wavelength loss-guided structure using Group III-V nitride material. Specifically, waveguiding in the lateral direction is achieved by placing a high index material in close proximity to the active layer of the laser, which gives rise to outcoupling of light from the lateral waveguides. The present invention provides higher laser beam quality and simplifies the processing technology.

    摘要翻译： 本发明涉及使用III-V族氮化物材料的短波长损耗引导结构。 具体地，通过将​​高折射率材料放置在靠近激光器的有源层的方式实现横向的波导，这导致来自横向波导的光的外耦合。 本发明提供更高的激光束质量并简化了处理技术。