公开(公告)号：US6153013A

公开(公告)日：2000-11-28

申请号：US800512

申请日：1997-02-14

申请人： Akira Sakai ,  Shotaro Okabe ,  Masahiro Kanai ,  Yuzo Kohda ,  Tadashi Hori ,  Tomonori Nishimoto ,  Takahiro Yajima

发明人： Akira Sakai ,  Shotaro Okabe ,  Masahiro Kanai ,  Yuzo Kohda ,  Tadashi Hori ,  Tomonori Nishimoto ,  Takahiro Yajima

IPC分类号： C23C16/44 ,  C23C16/54 ,  H01L31/0392 ,  H01L31/20 ,  C23C16/06

CPC分类号： C23C16/4409 ,  C23C16/44 ,  C23C16/545 ,  H01L31/03921 ,  H01L31/202 ,  H01L31/206 ,  Y02E10/50 ,  Y02P70/521

摘要： The deposited-film-forming apparatus of the present invention is an apparatus for forming deposited films while continuously passing a belt-like member through the insides of a plurality of vacuum chambers connected via connecting members and superposingly forming a plurality of different thin films on the surface of the belt-like member by plasma-assisted CVD, wherein the vacuum chambers are fixed to a stand for supporting the vacuum chambers, and a mechanism for relaxing stress acting in the transport direction of the belt-like member, generated in the vacuum chambers by the action of expansion and contraction due to thermal expansion of the vacuum chambers, is provided between each vacuum chamber and each connecting member.

摘要翻译： 本发明的沉积膜形成装置是一种用于形成沉积膜的装置，同时连续地通过带状构件穿过连接件的多个真空室的内部并在其上重叠地形成多个不同的薄膜 通过等离子体辅助CVD形成带状构件的表面，其中真空室被固定到用于支撑真空室的支架上，以及用于放松在真空中产生的带状构件的传送方向上作用的应力的机构 在每个真空室和每个连接构件之间设置由于真空室的热膨胀而引起的膨胀和收缩的作用的腔室。

公开(公告)号：US5720826A

公开(公告)日：1998-02-24

申请号：US657066

申请日：1996-05-29

申请人： Ryo Hayashi ,  Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Jinsho Matsuyama ,  Akira Sakai ,  Yuzo Koda ,  Tadashi Hori ,  Takahiro Yajima

发明人： Ryo Hayashi ,  Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Jinsho Matsuyama ,  Akira Sakai ,  Yuzo Koda ,  Tadashi Hori ,  Takahiro Yajima

IPC分类号： H01L31/04 ,  H01L31/0392 ,  H01L31/075 ,  H01L31/20

CPC分类号： H01L31/076 ,  H01L31/03921 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： Provided are a photovoltaic element suitable for practical use, low in cost, high in reliability, and high in photoelectric conversion efficiency, and a fabrication process thereof. In the photovoltaic element having stacked layers of non-single-crystal semiconductors, at least an i-type semiconductor layer and a second conductivity type semiconductor layer are stacked on a first conductivity type semiconductor layer, and the second conduction type semiconductor layer has a layer A formed by exposing the surface of the i-type semiconductor layer to a plasma containing a valence electron controlling agent and a layer B deposited on the layer A by a CVD process using at least the valence electron controlling agent and the main constituent elements of the i-type semiconductor layer.

摘要翻译： 提供适用于实际使用，成本低，可靠性高，光电转换效率高的光电元件及其制造方法。 在具有非单晶半导体层叠的光电元件中，在第一导电型半导体层上层叠至少i型半导体层和第二导电型半导体层，第二导电型半导体层具有层 A通过使用至少化合价电子控制剂和主要构成元素的CVD工艺将i型半导体层的表面暴露于含有价电子控制剂和沉积在层A上的层B的等离子体 i型半导体层。

公开(公告)号：US5589007A

公开(公告)日：1996-12-31

申请号：US523169

申请日：1995-09-05

申请人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Hideo Tamura ,  Atsushi Yasuno ,  Akira Sakai ,  Tadashi Hori

发明人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Hideo Tamura ,  Atsushi Yasuno ,  Akira Sakai ,  Tadashi Hori

IPC分类号： H01L21/205 ,  H01L31/075 ,  H01L31/20

CPC分类号： H01L31/076 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/075 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： A photovoltaic element comprises a first non-monocrystalline silicon-containing semiconductor layer of a first-conductivity type, a first i-type non-monocrystalline silicon-containing semiconductor layer formed by microwave plasma CVD, a second i-type non-monocrystalline silicon-containing semiconductor layer formed by high-frequency plasma CVD, and a second non-monocrystalline silicon-containing semiconductor layer of a conductivity type opposite to the first-conductivity type, wherein the second semiconductor layer is formed by plasma doping.

摘要翻译： 光电元件包括​​第一导电类型的第一非单晶硅含硅半导体层，通过微波等离子体CVD形成的第一i型非单晶含硅半导体层，第二i型非单晶硅含硅半导体层， 通过高频等离子体CVD形成的含硅半导体层和与第一导电型相反的导电类型的第二非单晶硅含量半导体层，其中通过等离子体掺杂形成第二半导体层。

公开(公告)号：US5510151A

公开(公告)日：1996-04-23

申请号：US943991

申请日：1992-09-11

申请人： Jinsho Matsuyama ,  Toshimitsu Kariya ,  Yasushi Fujioka ,  Tetsuya Takei ,  Katsumi Nakagawa ,  Masahiro Kanai ,  Hiroshi Echizen

发明人： Jinsho Matsuyama ,  Toshimitsu Kariya ,  Yasushi Fujioka ,  Tetsuya Takei ,  Katsumi Nakagawa ,  Masahiro Kanai ,  Hiroshi Echizen

IPC分类号： C23C16/511 ,  C23C16/54 ,  H01J37/32 ,  H01L21/205 ,  H01L29/872 ,  H01L31/076 ,  H01L31/20 ,  C23C16/00

CPC分类号： H01L31/076 ,  C23C16/511 ,  C23C16/545 ,  H01J37/32192 ,  H01J37/32229 ,  H01J37/3277 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/872 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： A microwave plasma CVD method for continuously forming a large area and length functional deposited film, the method comprises: continuously moving a substrate web in the longitudinal direction by paying out it by a pay-out mechanism and taking it up by a take-up mechanism; establishing a substantially enclosed film-forming chamber by curving and projecting the moving substrate web to form a columnar portion to be the circumferential wall of the film-forming chamber as the substrate is moving from the pay-out mechanism toward the take-up mechanism; introducing a film-forming raw material gas through a gas feeder into the film-forming chamber; and simultaneously, radiating a microwave energy in the film-forming chamber by using a microwave applicator, which is so designed that it can radiate a microwave energy in the direction parallel to the microwave propagating direction, to generate plasma in the film-forming chamber, thereby continuously forming a deposited film on the inner wall face of the continuously moving circumferential wall exposed to the plasma.

摘要翻译： 一种用于连续地形成大面积和长度的功能性沉积膜的微波等离子体CVD方法，所述方法包括：通过用放出机构支付并通过卷取机构将其沿着纵向方向延伸移动， ; 通过弯曲和突出移动的基材卷材来形成基本上封闭的成膜室，以形成作为基板从放出机构朝向卷取机构移动的成膜室的圆周壁的柱状部分; 将成膜原料气体通过气体供给器引入成膜室; 并且同时通过使用微波施加器在成膜室内辐射微波能量，微波施加器被设计成能够沿与微波传播方向平行的方向辐射微波能量，以在成膜室中产生等离子体， 从而在暴露于等离子体的连续移动的周壁的内壁面上连续地形成沉积膜。

公开(公告)号：US5266116A

公开(公告)日：1993-11-30

申请号：US858410

申请日：1992-03-27

申请人： Yasushi Fujioka ,  Takashi Kurokawa ,  Masahiro Kanai ,  Masafumi Sano ,  Takehito Yoshino ,  Yuzo Kohda

发明人： Yasushi Fujioka ,  Takashi Kurokawa ,  Masahiro Kanai ,  Masafumi Sano ,  Takehito Yoshino ,  Yuzo Kohda

IPC分类号： H01L21/205 ,  C23C16/507 ,  C23C16/54 ,  H01L31/04 ,  C23C16/50

CPC分类号： C23C16/507 ,  C23C16/545 ,  Y10S438/907

摘要： An apparatus continuously manufactures a semiconductor device. A plurality of glow discharge regions are connected by gas gates. A sufficiently long belt-shaped substrate having a desired width is arranged along a path in which the substrate sequentially penetrates the glow discharge regions. The belt-shaped substrate is continuously conveyed in a longitudinal direction while depositing a semi-conductor layer of a conductivity type in each of the glow discharge regions, thereby continuously manufacturing the device having a semiconductor junction. A plurality of rotatable rollers are arranged in a slit-shaped separating passage of the gas gates so as to support the back surface of the belt-shaped substrate while rotating the rollers.

摘要翻译： 设备连续制造半导体器件。 多个辉光放电区域由气门连接。 沿着基板顺序地穿透辉光放电区域的路径布置具有期望宽度的足够长的带状基板。 带状基板沿长度方向连续输送，同时在每个辉光放电区域中沉积导电类型的半导体层，从而连续制造具有半导体结的器件。 多个可旋转辊布置在气门的狭缝形分隔通道中，以便在旋转辊的同时支撑带状基底的后表面。

公开(公告)号：US5178905A

公开(公告)日：1993-01-12

申请号：US882238

申请日：1992-05-08

申请人： Masahiro Kanai ,  Atsushi Yamagami

发明人： Masahiro Kanai ,  Atsushi Yamagami

IPC分类号： C23C16/22 ,  C23C16/24 ,  C23C16/26 ,  C23C16/28 ,  C23C16/32 ,  C23C16/452 ,  C23C16/513 ,  H01L21/205 ,  H01L31/20

CPC分类号： H01L21/02422 ,  C23C16/22 ,  C23C16/24 ,  C23C16/26 ,  C23C16/28 ,  C23C16/325 ,  C23C16/452 ,  C23C16/513 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/50 ,  Y02P70/521

摘要： A process for forming a functional deposited film which comprises: introducing a precursor composed mainly of Group IV elements to be constituents for a deposited film to be formed into a substantially enclosed film-forming space being kept at 0.1 to 50 mTorr into which hydrogen gas plasma is drawn in a sheet-like state and a substrate is positioned parallel to said sheet-like hydrogen gas plasma, and exhausting the gases in the film-forming space in the direction perpendicular to the sheet-like hydrogen gas plasma and the substrate, said precursor being generated in an precursor generation space situated separately from said film-forming space, said sheet-like hydrogen gas plasma being formed such that a distance (L) of 5 to 50 mm is established between the boundary thereof and the surface of the substrate, said precursor being introduced through gas feed means positioned substantially in said distance (L).

摘要翻译： 一种形成功能沉积膜的方法，包括：将主要由IV族元素组成的前体引入成为沉积膜的成分，以形成基本上封闭的成膜空间，保持在0.1至50mTorr，氢气等离子体 被拉伸成片状状态，并且将基板平行于所述片状氢气等离子体定位，并且在垂直于片状氢气等离子体和基板的方向上排出成膜空间中的气体，所述 在与所述成膜空间分开设置的前体产生空间中产生前体，所述片状氢气等离子体形成为在其边界与基板表面之间建立5〜50mm的距离（L） 所述前体通过基本上位于所述距离（L）中的气体供给装置引入。

公开(公告)号：US5038713A

公开(公告)日：1991-08-13

申请号：US354856

申请日：1989-05-22

申请人： Soichiro Kawakami ,  Masahiro Kanai ,  Takayoshi Arai ,  Tsutomu Murakami

发明人： Soichiro Kawakami ,  Masahiro Kanai ,  Takayoshi Arai ,  Tsutomu Murakami

IPC分类号： B01J19/08 ,  C23C16/27 ,  C23C16/50 ,  C23C16/511 ,  C23F4/00 ,  C30B29/04 ,  H01J37/32 ,  H01L21/205 ,  H01L21/31 ,  H05H1/46

CPC分类号： H01J37/32357 ,  H05H1/46

摘要： A microwave plasma treating apparatus comprising a vacuum vessel, a device for introducing a microwave to the inside of the vacuum vessel by way of a microwave transmission circuit, a device for supplying a starting gas to the inside of the vacuum vessel, a device for evacuating the inside of the vacuum vessel, and a specimen holder for maintaining a specimen substrate to the inside of the vacuum vessel, wherein a cavity resonator integrated with two matching circuits is disposed in the microwave transmission circuit and a magnetic field generator is disposed to the outside of the cavity resonator, and having the following main features: (a) matching facilitated by a plunger for adjusting the axial length of the cavity resonator and cylindrical sling type irises, E-H tuner or three-stub tuner disposed at the portion of the cylindrical cavity resonator where the microwave is introduced, (b) a bell jar disposed within the cavity resonator to excite TM mode and (c) a magnetic field generator disposed to the outside of the cavity resonator to prepare a region of a great magnetic flux density in the discharging space at the inside of the cavity resonator.

公开(公告)号：US4951602A

公开(公告)日：1990-08-28

申请号：US442511

申请日：1989-11-28

申请人： Masahiro Kanai

发明人： Masahiro Kanai

IPC分类号： H01L21/205 ,  C23C16/50 ,  C23C16/54 ,  H01L21/00 ,  H01L31/04 ,  H01L31/075 ,  H01L31/20

CPC分类号： H01L21/67173 ,  C23C16/50 ,  C23C16/545 ,  H01L21/67017 ,  H01L21/67207 ,  H01L21/67236 ,  H01L31/075 ,  H01L31/202 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： An apparatus for continuously preparing semiconductor devices each comprising a plurality of semiconductor layers being stacked on a moving substrate web; said apparatus comprising a plurality of film-forming chambers by a number equal to the number of said stacked semiconductor layers, each of said film-forming chambers having a film-forming space and beingprovided with means For evacuating said film-forming space, means for supporting said substrate web in said film-forming space, means for maintaining said substrate web at a desired temperature and means for supplying a film-forming raw material gas into said film-forming space; each of said film-forming chambers being provided with a plasma-generating chamber for generating a plasma reactive with said film-forming raw material gas to cause the formation of a semiconductior film on said substrate web in said film-forming space; said plasma-generating chamber comprising a microwave permeable bell jar disposed in a cavity resonator integrated with two impedance matching circuits in a microwave circuit, said plasma-generating chamber being provided with a porous metal thin plate adjacent to said means for supplying a film-forming raw material gas, said plasma-generating chamber being provided with means for supplying a plasma-generating raw material gas selected from the group consisting of a hydrogen gas and a gaseous mixture composed of a hydrogen gas and a rare gas into said plasma-generating chamber; said apparatus being provided with a substrate web pay-out chamber provided with a mechanism for paying out said substrate web and a substrate take-up chamber provided with a mechanism for taking up said substrate web; said apparatus being provided with a substrate web-processing chamber at least between said substrate web pay-out chamber and the first film-forming chamber; each two of said chambers being connected by means of a connection pipe through which said substrate web can be moved; and said connection pipe being provided with means for preventing the gas of one of said chambers from entering into other chamber with an inert gas.

公开(公告)号：US4908330A

公开(公告)日：1990-03-13

申请号：US302245

申请日：1989-01-27

申请人： Takayoshi Arai ,  Masahiro Kanai ,  Soichiro Kawakami ,  Tsutomu Murakami

发明人： Takayoshi Arai ,  Masahiro Kanai ,  Soichiro Kawakami ,  Tsutomu Murakami

IPC分类号： C23C16/452 ,  C23C16/511 ,  C23C16/52

CPC分类号： C23C16/511 ,  C23C16/452 ,  C23C16/52

摘要： A process for the formation of a functional deposited film as a thin semiconductor film constituted with the group IV element or a thin semiconductor film constituted with group IV element alloy, by introducing, into a film forming space, a compound as the film-forming raw material and, if required, a compound containing an element capable of controlling valence electrons for the deposited film as the constituent element each in a gaseous state, or in a state where at least one of the compounds is activated, while forming hydrogen atoms in an excited state causing chemical reaction with at least one of the compounds in the gaseous state or in the activated state in an activation space different from the film forming space and introducing them into the film forming space, thereby forming a deposited film on a substrate, wherein the hydrogen atoms in the excited state are formed from a hydrogen gas or a gas mixture composed of a hydrogen gas and a rare gas by means of a microwave plasma generated in a plasma generation chamber disposed in a cavity resonator integrated with two impedance matching circuits in a microwave circuit and the excited state of the hydrogen atoms is controlled.

公开(公告)号：US4851302A

公开(公告)日：1989-07-25

申请号：US221761

申请日：1988-07-20

申请人： Katsumi Nakagawa ,  Shunichi Ishihara ,  Kozo Arao ,  Yasushi Fujioka ,  Akira Sakai ,  Masahiro Kanai

发明人： Katsumi Nakagawa ,  Shunichi Ishihara ,  Kozo Arao ,  Yasushi Fujioka ,  Akira Sakai ,  Masahiro Kanai

IPC分类号： H01L31/04 ,  G06F9/48 ,  H01L21/205 ,  H01L21/365 ,  H01L31/0248 ,  H01L31/0296 ,  H01L31/0392 ,  H01L31/068 ,  H01L31/18

CPC分类号： H01L31/02963 ,  H01L21/0237 ,  H01L21/0256 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/02631 ,  H01L31/0392 ,  H01L31/068 ,  H01L31/1828 ,  Y02E10/543 ,  Y02E10/547 ,  Y10T428/12528 ,  Y10T428/12792

摘要： There is provided a functional ZnSe:H deposited film composed of zinc atoms, selenium atoms, and at least hydrogen atoms, with the content of hydrogen atoms being 1 to 4 atomic % and the ratio of crystal grains per unit volume being 65 to 85 vol %. It is capable of efficient doping and is stable to irradiation. It can be made into a high conductivity p-type of n-type ZnSe:H:M film by doping. It can be efficiently deposited on a non-single crystal substrate such as metal, glass, and synthetic resin which was incapable of efficient depositing. Thus the invention makes it possible to form a high-functional device such as a photovoltaic element of ZnSe film on a non-single crystal substrate.

摘要翻译： 提供了由锌原子，硒原子和至少氢原子组成的功能性ZnSe：H沉积膜，氢原子的含量为1〜4原子％，单位体积的结晶比为65〜85体积％ ％。 它能够高效掺杂，对辐照稳定。 可以通过掺杂制成高导电性p型n型ZnSe：H：M膜。 它可以有效地沉积在不能有效沉积的非单晶衬底如金属，玻璃和合成树脂上。 因此，本发明使得可以在非单晶衬底上形成诸如ZnSe膜的光电元件的高功能器件。