公开(公告)号：US20060220044A1

公开(公告)日：2006-10-05

申请号：US11396922

申请日：2006-04-04

申请人： Hideto Sugawara ,  Chie Hongo

发明人： Hideto Sugawara ,  Chie Hongo

IPC分类号： H01L33/00

CPC分类号： H01L29/7371 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/36 ,  H01L29/66318 ,  H01L29/66462 ,  H01L33/025 ,  H01L33/305 ,  H01S5/22 ,  H01S5/32341

摘要： A gallium nitride based semiconductor device comprises: a first gallium nitride based semiconductor film doped with magnesium; and a second gallium nitride based semiconductor film provided on the first gallium nitride based semiconductor film and doped with magnesium. The first gallium nitride based semiconductor film has substantially flat distributions of magnesium concentration and hydrogen atom concentration, and the magnesium concentration is higher than the hydrogen atom concentration. The second gallium nitride based semiconductor film has a first region in which the magnesium concentration decreases and the hydrogen atom concentration increases toward the surface, and the magnesium concentration in the first region is higher than the hydrogen atom concentration in the first region and higher than the magnesium concentration in the first gallium nitride based semiconductor film.

摘要翻译： 氮化镓基半导体器件包括：掺杂有镁的第一氮化镓基半导体膜; 以及设置在第一氮化镓基半导体膜上并掺杂有镁的第二氮化镓基半导体膜。 第一氮化镓基半导体膜具有镁浓度和氢原子浓度基本平坦的分布，并且镁浓度高于氢原子浓度。 第二氮化镓系半导体膜具有其中镁浓度降低并且氢原子浓度朝向表面增加的第一区域，并且第一区域中的镁浓度高于第一区域中的氢原子浓度，并且高于 第一氮化镓基半导体膜中的镁浓度。

公开(公告)号：US20050056857A1

公开(公告)日：2005-03-17

申请号：US10958910

申请日：2004-10-04

申请人： Haruhiko Okazaki ,  Hideto Sugawara

发明人： Haruhiko Okazaki ,  Hideto Sugawara

IPC分类号： H01L21/28 ,  H01L33/06 ,  H01L33/10 ,  H01L33/32 ,  H01L33/40 ,  H01L33/00

CPC分类号： H01L33/40 ,  H01L24/73 ,  H01L33/32 ,  H01L33/405 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/12041 ,  H01L2924/3025 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099

摘要： An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle over (1)} an Ni layer for forming an ohmic contact with a p-GaN layer, {circle over (2)} an Mo layer having a barrier function of preventing diffusion of impurities, {circle over (3)} an Al layer as a high-reflection electrode, {circle over (4)} a Ti layer having a barrier function, and {circle over (5)} an Au layer for improving the contact with a submount on a lead frame. The p-side electrode having this five-layered structure realizes an ohmic contact and high reflectance at the same time.

摘要翻译： 在蓝宝石衬底上形成InGaN有源层。 在InGaN有源层上形成p侧电极，以向该InGaN有源层提供电流。 p侧电极包括{圆形（1个用于与p-GaN层形成欧姆接触的Ni层，{圆周（2个具有防止杂质扩散的阻挡功能的Mo层，{圆周（3个 Al层作为高反射电极{圆形（4个具有阻挡功能的Ti层）和{圆上（5个Au层，用于改善与引线框架上的基座的接触），具有该反射电极的p侧电极 五层结构同时实现欧姆接触和高反射率。

公开(公告)号：US20050051786A1

公开(公告)日：2005-03-10

申请号：US10946787

申请日：2004-09-22

申请人： Haruhiko Okazaki ,  Hideto Sugawara

发明人： Haruhiko Okazaki ,  Hideto Sugawara

IPC分类号： H01L21/28 ,  H01L33/06 ,  H01L33/10 ,  H01L33/32 ,  H01L33/40 ,  H01L29/22

CPC分类号： H01L33/40 ,  H01L24/73 ,  H01L33/32 ,  H01L33/405 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/12041 ,  H01L2924/3025 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099

摘要： An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle over (1)} an Ni layer for forming an ohmic contact with a p-GaN layer, {circle over (2)} an Mo layer having a barrier function of preventing diffusion of impurities, {circle over (3)} an Al layer as a high-reflection electrode, {circle over (4)} a Ti layer having a barrier function, and {circle over (5)} an Au layer for improving the contact with a submount on a lead frame. The p-side electrode having this five-layered structure realizes an ohmic contact and high reflectance at the same time.

公开(公告)号：US06846686B2

公开(公告)日：2005-01-25

申请号：US10429462

申请日：2003-05-05

申请人： Ryo Saeki ,  Hideto Sugawara ,  Yukio Watanabe ,  Tamotsu Jitosho

发明人： Ryo Saeki ,  Hideto Sugawara ,  Yukio Watanabe ,  Tamotsu Jitosho

IPC分类号： H01L33/42 ,  H01L21/205 ,  H01L33/00 ,  H01L33/06 ,  H01L33/12 ,  H01L33/14 ,  H01L33/16 ,  H01L33/30 ,  H01L21/00

CPC分类号： H01L33/16 ,  H01L33/0079 ,  H01L33/30

摘要： A semiconductor light-emitting device, including a first substrate of a first conductivity type, a first bonding layer provided on the first substrate and consisting essentially of a GaP material of the first conductivity type, a second bonding layer provided on the first bonding layer, coincident with the first bonding layer in the planar direction of the crystal, having the first conductivity type, and consisting essentially of a material represented by a formula InxGayP, where 0≦x, y≦1, and x+y=1, and a light-emitting layer comprising a first cladding layer, an active layer, and a second cladding layer, which are successively provided on the second bonding layer, each of the active layer and first and second cladding layers consisting essentially of a material represented by a formula InxGayAlzP, where x+y+z=1, and 0≦x, y, z≦1.

摘要翻译： 一种半导体发光器件，包括第一导电类型的第一衬底，设置在第一衬底上并基本上由第一导电类型的GaP材料组成的第一接合层，设置在第一接合层上的第二接合层， 与晶体的平面方向上的第一结合层重合，具有第一导电类型，并且基本上由由式InxGayP表示的材料组成，其中0 <= x，y <= 1，x + y = 1， 以及连续设置在所述第二接合层上的包括第一包层，有源层和第二包层的发光层，所述有源层和所述第一和第二包层中的每一个基本上由以 公式InxGayAlzP，其中x + y + z = 1，0 <= X，Y，Z＆LE; 1。

公开(公告)号：US06627521B2

公开(公告)日：2003-09-30

申请号：US10281852

申请日：2002-10-28

申请人： Chisato Furukawa ,  Hideto Sugawara ,  Nobuhiro Suzuki

发明人： Chisato Furukawa ,  Hideto Sugawara ,  Nobuhiro Suzuki

IPC分类号： H01L2120

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/08 ,  H01L33/501 ,  H01L33/508 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/00

摘要： There is disclosed a semiconductor light emitting element formed by selective growth and being high in light emitting efficiency, in which at least one GaN-based layer grown by ELO is stacked/formed on a sapphire substrate, and a fluorescent substance for converting an ultraviolet light to a visible light is contained in a selective growth mask material layer for use in this case. Since this fluorescent substance converts the ultraviolet light to the visible light, a binding efficiency of the ultraviolet light to the fluorescent substance is enhanced in either one of a center light emitting type and UV light emitting type of light emitting elements. By further containing the fluorescent substance into a passivation film, the efficiency is further enhanced.

摘要翻译： 公开了通过选择性生长和发光效率高而形成的半导体发光元件，其中至少一个由ELO生长的GaN基层堆叠/形成在蓝宝石衬底上，以及用于转换紫外线的荧光物质 在这种情况下使用的选择性生长掩模材料层中包含可见光。 由于该荧光物质将紫外光转换成可见光，因此在中心发光型和紫外线发光型发光元件中的任意一种中增加紫外线对荧光物质的结合效率。 通过进一步将荧光物质包含在钝化膜中，效率进一步提高。

公开(公告)号：US06191439B1

公开(公告)日：2001-02-20

申请号：US09351897

申请日：1999-07-13

申请人： Hideto Sugawara

发明人： Hideto Sugawara

IPC分类号： H01L3300

CPC分类号： H01L33/32 ,  H01L33/14 ,  H01L33/38

摘要： An object of the present invention is to provide a semiconductor light emitting device that an emission efficiency is high and it is possible to emit lights at an ultraviolet wave length. The semiconductor light emitting device according to the present invention is constituted by laminating a buffer layer, an n-GaN contact layer, a clad layer including n-AlGaN, a GaN active layer, a clad layer including p-AlGaN, and a p-GaN contact layer on a sapphire substrate. Each portion of the clad layer including n-AlGaN, the GaN active layer 5, the clad layer including p-AlGaN, and the p-GaN contact layer is eliminated by etching; as a result, the n-GaN contact layer 3 is exposed. Next, An n-side electrode for current injection is formed on the n-GaN contact layer 3. Next, an n-GaN current block layer 9 is formed on a portion of an upper face of the p-GaN contact layer 7. Next, a p-side electrode for current injection is formed on upper faces of the p-GaN contact layer and the n-GaN current block layer. The GaN active layer is set to a thickness equal to or more than 50 nm. An current injection area injected via the electrode for current injection is set equal to or less than 5×10−4 cm2.

摘要翻译： 本发明的目的是提供一种发射效率高并且可以以紫外线波长发光的半导体发光器件。 根据本发明的半导体发光器件通过层叠缓冲层，n-GaN接触层，包含n-AlGaN的覆盖层，GaN有源层，包括p-AlGaN的覆层和p- 蓝宝石衬底上的GaN接触层。 通过蚀刻来消除包括n-AlGaN，GaN有源层5，包层p-AlGaN和p-GaN接触层的包层的每个部分。 结果，露出n-GaN接触层3。 接下来，在n-GaN接触层3上形成用于电流注入的n侧电极。接下来，在p-GaN接触层7的上表面的一部分上形成n-GaN电流阻挡层9。 在p-GaN接触层和n-GaN电流阻挡层的上表面上形成用于电流注入的p侧电极。 GaN活性层的厚度设定为50nm以上。 通过电极注入的电流注入区域设定为5×10 -4 cm 2以下。

公开(公告)号：US5410159A

公开(公告)日：1995-04-25

申请号：US128643

申请日：1993-09-30

申请人： Hideto Sugawara ,  Kazuhiko Itaya

发明人： Hideto Sugawara ,  Kazuhiko Itaya

IPC分类号： H01L21/203 ,  H01L33/06 ,  H01L33/14 ,  H01L33/30 ,  H01L33/40 ,  H01S5/18 ,  H01S5/343 ,  H01L29/205 ,  H01L33/00 ,  H01S3/19

CPC分类号： H01L33/30 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/34326 ,  H01S5/18

摘要： A light-emitting diode, in which light is emitted from a side opposite to a substrate, includes a compound semiconductor substrate of a first conductivity type, a lower cladding layer formed on the substrate end consisting of InGaAlP of the first conductivity type, a light-emitting layer formed on the lower cladding layer and having a quantum well structure constituted by alternately stacking barrier layers and eight or more quantum well layers, and an upper cladding layer formed on the light-emitting layer and consisting of InGaAlP of a second conductivity type.

摘要翻译： 从与衬底相反的一侧发射光的发光二极管包括第一导电类型的化合物半导体衬底，形成在由第一导电类型的InGaAlP组成的衬底端上的下包层， 并且具有通过交替层叠阻挡层和八个以上的量子阱层而构成的量子阱结构，以及形成在发光层上并由第二导电型的InGaAlP构成的上部包层 。

公开(公告)号：US08247794B2

公开(公告)日：2012-08-21

申请号：US12952758

申请日：2010-11-23

申请人： Hideto Sugawara

发明人： Hideto Sugawara

IPC分类号： H01L29/06

CPC分类号： H01L29/2003 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02639 ,  H01L29/0657 ,  H01L29/205 ,  H01L29/7787 ,  H01L33/007 ,  H01L33/20

摘要： According to one embodiment, a nitride semiconductor device includes a substrate, an Alx1Ga1-x1N first buried layer, an InyAlzGa1-y-zN buried layer and an Alx2Ga1-x2N second buried layer. The substrate has protrusions formed in an in-plane direction on a first major surface, and a depression between adjacent ones of the protrusions. The first buried layer is formed on the depression and one of the protrusions. The InyAlzGa1-y-zN buried layer is formed on the first buried layer. The second buried layer is formed on the InyAlzGa1-y-zN buried layer. A portion of the first buried layer formed on the depression and a portion of the first buried layer formed on the one of the protrusions are not connected to each other. A portion of the InyAlzGa1-y-zN buried layer formed above the depression and a portion of the InyAlzGa1-y-zN buried layer formed above the one of the protrusions are connected to each other.

摘要翻译： 根据一个实施例，氮化物半导体器件包括衬底，Al x Ga 1-x N 1第一掩埋层，In y Al z Ga 1-y-z N埋层和Al x Ga 1-x 2 N第二掩埋层。 基板具有在第一主表面上沿面内方向形成的突起，以及相邻突起之间的凹陷。 第一掩埋层形成在凹部和突起之一中。 InyAlzGa1-y-zN掩埋层形成在第一掩埋层上。 在InyAlzGa1-y-zN掩埋层上形成第二掩埋层。 形成在凹部上的第一掩埋层的一部分和形成在一个突起上的第一掩埋层的一部分没有彼此连接。 形成在凹部上方的InyAlzGa1-y-zN掩埋层的一部分和形成在上述一个突起上的InyAlzGa1-y-zN掩埋层的一部分彼此连接。

公开(公告)号：US08004065B2

公开(公告)日：2011-08-23

申请号：US12250767

申请日：2008-10-14

申请人： Hideto Sugawara

发明人： Hideto Sugawara

IPC分类号： H01L33/00 ,  H01L21/20

CPC分类号： H01L21/02639 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02642 ,  H01L33/0075 ,  H01L33/16 ,  H01S5/3202 ,  H01S5/3203 ,  H01S2304/12

摘要： A nitride semiconductor includes: a substrate having a major surface including a first crystal polarity surface and a second crystal polarity surface different from the first crystal polarity surface; and a single polarity layer provided above the major surface and having a single crystal polarity.

摘要翻译： 氮化物半导体包括：具有包括第一晶体极性表面和与第一晶体极性表面不同的第二晶体极性表面的主表面的基板; 以及设置在主表面上并具有单晶极性的单极性层。

公开(公告)号：US20080176353A1

公开(公告)日：2008-07-24

申请号：US11875777

申请日：2007-10-19

申请人： Hideto Sugawara ,  Yukio Watanabe ,  Hirohisa Abe ,  Kuniaki Konno

发明人： Hideto Sugawara ,  Yukio Watanabe ,  Hirohisa Abe ,  Kuniaki Konno

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/16 ,  H01L33/22 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/10155 ,  H01L2924/00014 ,  H01L2924/00

摘要： A high-luminance light emitting element is manufactured by a method comprising: forming a light emitting layer on a first surface of a GaP substrate including the first surface and a second surface opposed to the first surface and having an area smaller than the first area, the light emitting layer emitting light of a wavelength λ permitted to pass through the GaP substrate; forming a plurality of side surfaces on the GaP substrate to be respectively aslant by substantially the same angle to become narrower toward the second surface; and forming a plurality of depressions and protrusions as high as 0.1λ to 3λ on the side surfaces.

摘要翻译： 通过以下方法制造高亮度发光元件，该方法包括：在包括第一表面的GaP基板的第一表面和与第一表面相对的第二表面上形成发光层，并且具有小于第一区域的面积， 所述发光层发射允许通过所述GaP衬底的波长λ的光; 在所述GaP基板上形成多个侧表面，以相对于所述第二表面变窄的方式分别倾斜大致相同的角度; 并且在侧表面上形成高达0.1λ至3λ的多个凹陷和突起。