公开(公告)号：US08674491B2

公开(公告)日：2014-03-18

申请号：US13103107

申请日：2011-05-09

申请人： Chun-Kai Liu ,  John H. Lau ,  Ming-Ji Dai ,  Ra-Min Tain

发明人： Chun-Kai Liu ,  John H. Lau ,  Ming-Ji Dai ,  Ra-Min Tain

IPC分类号： H01L23/02

CPC分类号： H01L23/38 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/53276 ,  H01L25/0657 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06589

摘要： A semiconductor device including a silicon substrate, a plurality of silicon nanowire clusters, a first circuit layer and a second circuit layer. The silicon substrate has a first surface, a second surface opposite to the first surface and a plurality of through holes. The silicon nanowire clusters are disposed in the through holes of the silicon substrate, respectively. The first circuit layer is disposed on the first surface and connected to the silicon nanowire clusters. The second circuit layer is disposed on the second surface and connected to the silicon nanowire clusters.

摘要翻译： 一种半导体器件，包括硅衬底，多个硅纳米线簇，第一电路层和第二电路层。 硅衬底具有第一表面，与第一表面相对的第二表面和多个通孔。 硅纳米线簇分别设置在硅衬底的通孔中。 第一电路层设置在第一表面上并连接到硅纳米线簇。 第二电路层设置在第二表面上并连接到硅纳米线簇。

公开(公告)号：US08552554B2

公开(公告)日：2013-10-08

申请号：US13332144

申请日：2011-12-20

申请人： Ra-Min Tain ,  Ming-Ji Dai ,  Yon-Hua Tzeng

发明人： Ra-Min Tain ,  Ming-Ji Dai ,  Yon-Hua Tzeng

IPC分类号： H01L23/48

CPC分类号： H01L23/3677 ,  H01L23/3735 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/00

摘要： A heat dissipation structure for an electronic device includes a body having a first surface and a second surface opposite to the first surface. A silicon-containing insulating layer is disposed on the first surface of the body. A chemical vapor deposition (CVD) diamond film is disposed on the silicon-containing insulating layer. A first conductive pattern layer is disposed on the silicon-containing insulating layer, wherein the first conductive pattern layer is enclosed by and spaced apart from the CVD diamond film. A method for fabricating a heat dissipation structure for an electronic device and an electronic package having the heat dissipation structure are also disclosed.

摘要翻译： 电子设备的散热结构包括具有与第一表面相对的第一表面和第二表面的主体。 含硅绝缘层设置在主体的第一表面上。 化学气相沉积（CVD）金刚石膜设置在含硅绝缘层上。 第一导电图案层设置在含硅绝缘层上，其中第一导电图案层被CVD金刚石膜包围并与其间隔开。 还公开了一种用于制造用于电子设备的散热结构的方法和具有散热结构的电子封装。

公开(公告)号：US08536701B2

公开(公告)日：2013-09-17

申请号：US13411639

申请日：2012-03-05

申请人： Ra-Min Tain ,  Ming-Ji Dai ,  John H. Lau

发明人： Ra-Min Tain ,  Ming-Ji Dai ,  John H. Lau

IPC分类号： H01L23/48 ,  H01L29/40

CPC分类号： H01L23/3171 ,  H01L23/481 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/45 ,  H01L24/48 ,  H01L29/4175 ,  H01L29/41766 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/0603 ,  H01L2224/06051 ,  H01L2224/06102 ,  H01L2224/06181 ,  H01L2224/06505 ,  H01L2224/13 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48824 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/73253 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/10253 ,  H01L2924/00 ,  H01L2224/48744 ,  H01L2224/05552 ,  H01L2224/45015 ,  H01L2924/207

摘要： An electronic device packaging structure is provided. The semiconductor device includes a semiconductor base, an emitter, a collector, and a gate. The emitter and the gate are disposed on a first surface of the semiconductor base. The collector is disposed on a second surface of the semiconductor base. A first passivation layer is located on the first surface of the semiconductor base surrounding the gate. A first conductive pad is disposed on the first passivation layer. A second conductive pad is disposed on the collector on the second surface. At least one conductive through via structure penetrates the first passivation layer, the first and second surfaces of the semiconductor base, and the collector to electrically connect the first and second conductive pads.

摘要翻译： 提供一种电子设备包装结构。 半导体器件包括半导体基底，发射极，集电极和栅极。 发射极和栅极设置在半导体基底的第一表面上。 集电体设置在半导体基底的第二表面上。 第一钝化层位于围绕栅极的半导体基底的第一表面上。 第一导电焊盘设置在第一钝化层上。 第二导电焊盘设置在第二表面上的集电器上。 至少一个导电贯通孔结构穿透第一钝化层，半导体基底的第一和第二表面以及集电器，以电连接第一和第二导电焊盘。

公开(公告)号：US08438847B2

公开(公告)日：2013-05-14

申请号：US12641324

申请日：2009-12-18

申请人： Yao-Shun Chen ,  Wen-Yang Peng ,  Ra-Min Tain

发明人： Yao-Shun Chen ,  Wen-Yang Peng ,  Ra-Min Tain

IPC分类号： F03C1/00 ,  F03B13/00 ,  F02B43/08

CPC分类号： C25B9/00 ,  C25B1/04 ,  F01K27/00 ,  F02B43/10 ,  H02K7/1823 ,  Y02E60/366 ,  Y02P20/129

摘要： A heat-pipe electric power generating device includes a heat pipe having an evaporating end and a condensing end, a non-magnetic shell connected to the condensing end, a generator stator coil disposed at the outer of the non-magnetic shell, a turbine disposed in the heat pipe, a driving axle connected to the turbine and extended into the non-magnetic shell, and a magnetic element disposed at the driving axle and located in the non-magnetic shell. A vapor flow flowing to the condensing end is generated at the evaporating end. The vapor flow drives the turbine to move the magnetic element, such that the generator stator coil generates an induced current. In addition, a hydrogen/oxygen gas generating apparatus and an internal combustion engine system having the heat-pipe electric power generating device are also provided.

摘要翻译： 一种热管式发电装置，具备：具有蒸发端和冷凝端的热管，与冷凝端连接的非磁性壳，配置在非磁性壳外侧的发电机定子线圈， 在热管中，连接到涡轮机并延伸到非磁性壳体中的驱动轴和设置在驱动轴处并位于非磁性壳体中的磁性元件。 在蒸发端产生流到冷凝端的蒸气流。 蒸气流驱动涡轮以移动磁性元件，使得发电机定子线圈产生感应电流。 此外，还提供了具有热管发电装置的氢/氧气发生装置和内燃机系统。

公开(公告)号：US08418456B2

公开(公告)日：2013-04-16

申请号：US12390512

申请日：2009-02-23

申请人： Ra-Min Tain ,  Wen-Yang Peng ,  Yao-Shun Chen

发明人： Ra-Min Tain ,  Wen-Yang Peng ,  Yao-Shun Chen

IPC分类号： F03C1/00 ,  F03B13/00 ,  F02B43/08

CPC分类号： F01N5/02 ,  C25B1/04 ,  C25B9/00 ,  F01K27/00 ,  F02B43/10 ,  F02B2043/106 ,  F02G2260/00 ,  H02K7/1823 ,  Y02E60/366 ,  Y02T10/16 ,  Y02T10/32

摘要： A heat-pipe electric power generating device including a fan disposed between an evaporating end and a condensing end of a heat-pipe is provided. A magnetic substance is disposed on the fan to form a magnetic field. A stator coil of a generator is disposed at the outer of the heat-pipe, which is corresponding to the position of the fan. An induced current is generated by the stator coil of the generator when the magnetic substance spins. Since the heat-pipe is made of copper, and the magnetic field is not shielded by copper, a current is induced when a relative motion between the magnetic substance on the fan and the stator coil of the generator at the outer of the heat-pipe is generated. Further, the heat-pipe electric power generating device can be applied on a hydrogen/oxygen gas generating apparatus and an internal combustion engine system of a motor vehicle.

摘要翻译： 提供一种热管发电装置，其包括设置在蒸发端和热管的冷凝端之间的风扇。 将磁性物质设置在风扇上以形成磁场。 发电机的定子线圈设置在热管的外部，其对应于风扇的位置。 当磁性物质旋转时，发电机的定子线圈产生感应电流。 由于热管由铜制成，并且磁场不被铜屏蔽，当风扇上的磁性物质与发热体的定子线圈之间在热管外部的相对运动时，会产生电流 被生成。 此外，热管式发电装置可以应用于机动车辆的氢气/氧气发生装置和内燃机系统。

公开(公告)号：US20120249176A1

公开(公告)日：2012-10-04

申请号：US13169051

申请日：2011-06-27

申请人： Heng-Chieh Chien ,  Ra-Min Tain ,  John H. Lau ,  Yu-Lin Chao ,  Ming-Ji Dai

发明人： Heng-Chieh Chien ,  Ra-Min Tain ,  John H. Lau ,  Yu-Lin Chao ,  Ming-Ji Dai

IPC分类号： G01R31/00

CPC分类号： G01N25/18

摘要： A test structure including a substrate, at least one conductive plug, a first conductive trace and a second conductive trace is provided. The substrate has a first area and a second area. The at lest one conductive plug is disposed in the substrate in the first area, wherein the conductive plug does not penetrate through the substrate.The first conductive trace is disposed on the conductive plug and on the substrate in the first area. The second conductive trace is disposed on the substrate in the second area. It is noted that the first conductive trace and the second conductive trace have the same material and the same shape. A measurement method of the above-mentioned test structure is also provided.

摘要翻译： 提供了包括基板，至少一个导电插塞，第一导电迹线和第二导电迹线的测试结构。 衬底具有第一区域和第二区域。 至少一个导电插头设置在第一区域中的基板中，其中导电插塞不穿透基板。 第一导电迹线设置在第一区域中的导电插塞和基板上。 第二导电迹线设置在第二区域中的基板上。 注意，第一导电迹线和第二导电迹线具有相同的材料和相同的形状。 还提供了上述测试结构的测量方法。

公开(公告)号：US08278755B2

公开(公告)日：2012-10-02

申请号：US12975326

申请日：2010-12-21

申请人： Ra-Min Tain ,  Ming-Ji Dai ,  I-Nan Lin

发明人： Ra-Min Tain ,  Ming-Ji Dai ,  I-Nan Lin

IPC分类号： H01L23/48 ,  H01L21/28

CPC分类号： H01L23/3732 ,  H01L23/3677 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/00

摘要： A heat dissipation structure for an electronic device includes a body having a first surface and a second surface opposite to the first surface. A silicon-containing insulating layer is disposed on the first surface of the body. An ultrananocrystalline diamond film is disposed on the silicon-containing insulating layer. A first conductive pattern layer is disposed on the silicon-containing insulating layer and enclosed by the ultrananocrystalline diamond film, wherein the ultrananocrystalline diamond film and the first conductive pattern layer do not overlap with each other as viewed from a top-view perspective. A method for fabricating a heat dissipation structure for an electronic device and an electronic package having the heat dissipation structure are also disclosed.

摘要翻译： 电子设备的散热结构包括具有与第一表面相对的第一表面和第二表面的主体。 含硅绝缘层设置在主体的第一表面上。 将超晶体金刚石膜设置在含硅绝缘层上。 第一导电图案层设置在含硅绝缘层上并由超晶体金刚石膜包围，其中从顶视角观察，超极晶体金刚石膜和第一导电图案层彼此不重叠。 还公开了一种用于制造用于电子设备的散热结构的方法和具有散热结构的电子封装。

公开(公告)号：US20120092834A1

公开(公告)日：2012-04-19

申请号：US13332144

申请日：2011-12-20

申请人： Ra-Min Tain ,  Ming-Ji Dai ,  Yon-Hua Tzeng

发明人： Ra-Min Tain ,  Ming-Ji Dai ,  Yon-Hua Tzeng

IPC分类号： H05K7/20 ,  B21D53/02

CPC分类号： H01L23/3677 ,  H01L23/3735 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/00

摘要： A heat dissipation structure for an electronic device includes a body having a first surface and a second surface opposite to the first surface. A silicon-containing insulating layer is disposed on the first surface of the body. A chemical vapor deposition (CVD) diamond film is disposed on the silicon-containing insulating layer. A first conductive pattern layer is disposed on the silicon-containing insulating layer, wherein the first conductive pattern layer is enclosed by and spaced apart from the CVD diamond film. A method for fabricating a heat dissipation structure for an electronic device and an electronic package having the heat dissipation structure are also disclosed.

摘要翻译： 电子设备的散热结构包括具有与第一表面相对的第一表面和第二表面的主体。 含硅绝缘层设置在主体的第一表面上。 化学气相沉积（CVD）金刚石膜设置在含硅绝缘层上。 第一导电图案层设置在含硅绝缘层上，其中第一导电图案层被CVD金刚石膜包围并与其间隔开。 还公开了一种用于制造用于电子设备的散热结构的方法和具有散热结构的电子封装。

公开(公告)号：US20120038041A1

公开(公告)日：2012-02-16

申请号：US12975326

申请日：2010-12-21

申请人： Ra-Min Tain ,  Ming-Ji Dai ,  I-Nan Lin

发明人： Ra-Min Tain ,  Ming-Ji Dai ,  I-Nan Lin

IPC分类号： H01L23/48 ,  H01L21/28

CPC分类号： H01L23/3732 ,  H01L23/3677 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/00

摘要： A heat dissipation structure for an electronic device includes a body having a first surface and a second surface opposite to the first surface. A silicon-containing insulating layer is disposed on the first surface of the body. An ultrananocrystalline diamond film is disposed on the silicon-containing insulating layer. A first conductive pattern layer is disposed on the silicon-containing insulating layer and enclosed by the ultrananocrystalline diamond film, wherein the ultrananocrystalline diamond film and the first conductive pattern layer do not overlap with each other as viewed from a top-view perspective. A method for fabricating a heat dissipation structure for an electronic device and an electronic package having the heat dissipation structure are also disclosed.

摘要翻译： 电子设备的散热结构包括具有与第一表面相对的第一表面和第二表面的主体。 含硅绝缘层设置在主体的第一表面上。 将超晶体金刚石膜设置在含硅绝缘层上。 第一导电图案层设置在含硅绝缘层上并由超晶体金刚石膜包围，其中从顶视角观察，超极晶体金刚石膜和第一导电图案层彼此不重叠。 还公开了一种用于制造用于电子设备的散热结构的方法和具有散热结构的电子封装。

公开(公告)号：US08004079B2

公开(公告)日：2011-08-23

申请号：US12464873

申请日：2009-05-13

申请人： Ra-Min Tain ,  Yu-Lin Chao ,  Shu-Jung Yang ,  Rong-Chang Fang ,  Wei Li ,  Chih-Yuan Cheng ,  Ming-Che Hsieh

发明人： Ra-Min Tain ,  Yu-Lin Chao ,  Shu-Jung Yang ,  Rong-Chang Fang ,  Wei Li ,  Chih-Yuan Cheng ,  Ming-Che Hsieh

IPC分类号： H01L23/10 ,  H01L23/34

CPC分类号： H01L25/105 ,  H01L23/3128 ,  H01L25/0657 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2225/0652 ,  H01L2225/06541 ,  H01L2225/06589 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/1094 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/00014 ,  H01L2924/00

摘要： A chip package structure includes a substrate, a chip, a thermal conductive layer, a plurality of signal contacts, and a molding compound. The substrate includes a plurality of first thermal conductive vias, a connecting circuit, and a plurality of signal vias electrically connected to the connecting circuit, and the substrate has a chip disposing region. The chip is disposed on the chip disposing region of the substrate and electrically connected to the signal vias through the connecting circuit. The thermal conductive layer is disposed over the substrate, connected to the first thermal conductive vias, and located above the chip disposing region. Besides, the thermal conductive layer has first openings exposing the signal vias. The signal contacts are respectively disposed in the first openings and connected to the signal vias. The molding compound encapsulates the chip.

摘要翻译： 芯片封装结构包括衬底，芯片，导热层，多个信号触点和模塑料。 衬底包括多个第一导热通孔，连接电路和电连接到连接电路的多个信号通孔，并且衬底具有芯片布置区域。 芯片设置在基板的芯片布置区域上，并通过连接电路与信号通孔电连接。 导热层设置在衬底上，连接到第一导热通孔，并且位于芯片布置区域的上方。 此外，导热层具有暴露信号通孔的第一开口。 信号触点分别设置在第一开口中并连接到信号通路。 模塑料封装芯片。