摘要:
In one aspect, a method of forming a silicon layer on a substrate is provided, including the steps providing a substrate; and introducing hydrogen and silane into a chamber containing the substrate such that a layer of silicon is deposited on the substrate; wherein the silane is less than about 99.999% pure. Numerous other aspects are provided.
摘要:
Systems, methods, and apparatus involve a plasma processing chamber for depositing a film on a substrate. The plasma processing chamber includes a lid assembly having a ground plate, a backing plate, and a non-uniformity existing between the ground plate and the backing plate. The non-uniformity may interfere with RF wave uniformity and cause an impedance imbalance between portions of the ground plate and backing plate. The non-uniformity may include a structure or a reduced spacing of non-uniform surfaces. A reduced spacing of non-uniform surfaces may exist where a first distance between the ground plate and the backing plate at a first end is different from a second distance between the ground plate and the backing plate at a second end. The structure may be from 2 cm to 10 cm thick, cover from 20% to 50% of the backing plate, and be located away from a discontinuity existing inside the chamber.
摘要:
Blue inks for displays are provided. In one aspect, the blue inks include one or more blue organic pigments, one or more monomers, one or more polymeric dispersants, and one or more organic solvents. In another aspect, the blue inks include one or more blue organic pigments, one or more violet pigments, one or more monomers, one or more polymeric dispersants, and one or more organic solvents. Methods of forming displays that include dispensing the blue inks by inkjetting onto a substrate and displays that include the blue inks are also provided.
摘要:
The present invention generally includes a chamber liner spaced from a chamber wall to permit processing gases to be pulled between the chamber liner and the chamber wall when withdrawing gases from the processing chamber. When the vacuum pump is below the susceptor, processing gases will be drawn below the susceptor and may lead to undesired deposition onto process chamber components. Additionally, the processing gases will be pulled past the slit valve opening and potentially deposit within the slit valve opening. When material deposits in the slit valve opening, flaking may occur and contaminate the substrates. By drawing the processing gases along the sidewalls other than the one having the slit valve opening therethrough, undesired deposition on the slit valve opening may be reduced.
摘要:
A thin film multi-junction photovoltaic structure is presented as well as methods and apparatus for forming the same. The photovoltaic structure comprises first and second NIP junctions formed over a translucent substrate.
摘要:
Apparatus and methods are provided that are adapted to match the impedance of an electrical load to an impedance of an electrical signal generator. The invention includes providing a plurality of electrical components adapted to collectively match the impedance of the electrical load to the impedance of the electrical signal generator. The electrical components are arranged symmetrically and concentrically about an axis. Additionally, the invention may also include a first connector adapted to electrically couple the electrical signal generator to the electrical components. Additionally, the invention may also include a second connector adapted to electrically couple the load to the electrical components. Numerous other aspects are provided.
摘要:
The present invention generally relates to a sectioning module positioned within an automated solar cell device fabrication system. The solar cell device fabrication system is adapted to receive a single large substrate and form multiple silicon thin film solar cell devices from the single large substrate.
摘要:
The present invention generally comprises a method and an apparatus for guiding the flow of processing gases away from chamber walls and slit valve opening. By controlling the flow path of the process gases within a processing chamber, undesirable deposition upon chamber walls and within slit valve openings may be reduced. By reducing deposition in slit valve openings, flaking may be reduced. By reducing deposition on chamber walls, the time between chamber cleaning may be increased. Thus, guiding the flow of processing gases within the processing chamber may increase substrate throughput.
摘要:
Methods and apparatus having a flow gradient created from a gas distribution plate are provided. In one embodiment, the method and apparatus are particularly useful for, but not limited to, depositing a silicon film for solar cell applications. The apparatus for depositing a uniform film for solar cell applications includes a processing chamber, and a quadrilateral gas distribution plate disposed in the processing chamber and having at least four corners separated by four sides. The gas distribution plate further includes a first plurality of chokes formed through the gas distribution plate, the first plurality of chokes located in the corners, and a second plurality of chokes formed through the gas distribution plate, the second plurality of chokes located along the sides of the gas distribution plate between the corner regions, wherein the first plurality of chokes have a greater flow resistance than that of the second plurality of chokes.
摘要:
Apparatus and methods for printing are provided. A printing apparatus includes a platform adapted to rotate about a rotational axis and a plurality of longitudinally aligned print heads coupled to the platform. In one or more embodiments, each of the plurality of print heads includes a set of nozzles arranged in a line having a nozzle line length and the print heads are separated longitudinally by a clearing distance equal to approximately an integer times the nozzle line length.