公开(公告)号：US07844941B2

公开(公告)日：2010-11-30

申请号：US12508642

申请日：2009-07-24

申请人： Yasushi Takahashi

发明人： Yasushi Takahashi

IPC分类号： G06F17/50 ,  G21K5/10 ,  H01J37/08 ,  H01L21/027

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/31776

摘要： When a space, sandwiched by large patterns having a predetermined size or more, is exposed using a charged particle beam, the space sandwiched by the large patterns is exposed using a common block mask having the space and edge portions of the large patterns on both sides of the space, and portions other than the edge portions of the large patterns on both sides are exposed by a variable rectangular beam or by using another block mask.

摘要翻译： 当使用具有预定尺寸或更大尺寸的大图案夹持的空间使用带电粒子束曝光时，使用具有两侧的大图案的空间和边缘部分的公共阻挡掩模来曝光由大图案夹持的空间 并且两侧的大图案的边缘部分之外的部分通过可变的矩形光束或通过使用另一个块掩模曝光。

公开(公告)号：US07812464B2

公开(公告)日：2010-10-12

申请号：US12149183

申请日：2008-04-29

申请人： Toshinori Hirashima ,  Munehisa Kishimoto ,  Toshiyuki Hata ,  Yasushi Takahashi

发明人： Toshinori Hirashima ,  Munehisa Kishimoto ,  Toshiyuki Hata ,  Yasushi Takahashi

IPC分类号： H01L23/28 ,  H01L27/088

CPC分类号： H01L21/561 ,  H01L21/565 ,  H01L23/4951 ,  H01L23/49562 ,  H01L24/81 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/16245 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2224/81801 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/05541 ,  H01L2224/05005 ,  H01L2224/05624 ,  H01L2224/05099 ,  H01L2924/00012

摘要： A semiconductor device and method having high output and having reduced external resistance is reduced and improved radiating performance. A MOSFET (70) has a connecting portion for electrically connecting a surface electrode of a semiconductor pellet and a plurality of inner leads, a resin encapsulant (29), a plurality of outer leads (37), (38) protruding in parallel from the same lateral surface of the resin encapsulant (29) and a header (28) bonded to a back surface of the semiconductor pellet and having a header protruding portion (28c) protruding from a lateral surface of the resin encapsulant (29) opposite to the lateral surface from which the outer leads protrude, wherein the header (28) has an exposed surface (28b) exposed from the resin encapsulant (29); the outer leads (37), (38) are bent; and the exposed of the outer leads (37), (38) are provided at substantially the same height.

摘要翻译： 具有高输出并且具有降低的外部电阻的半导体器件和方法被降低并且改善了辐射性能。 MOSFET（70）具有用于电连接半导体芯片的表面电极和多个内部引线的连接部分，树脂密封剂（29），与外部引线平行突出的多个外部引线（37），（38） 树脂密封剂（29）的相同的侧表面和接合到半导体芯片的背面的集管（28），并且具有从树脂密封剂（29）的与侧面相反的侧表面突出的集管突出部分（28c） 外引线突出的表面，其中集管（28）具有从树脂密封剂（29）暴露的暴露表面（28b）; 外引线（37），（38）弯曲; 并且暴露的外引线（37），（38）设置在基本相同的高度。

公开(公告)号：USD622367S1

公开(公告)日：2010-08-24

申请号：US29313497

申请日：2008-11-14

申请人： Yasushi Takahashi ,  Masahiro Maruhashi

设计人： Yasushi Takahashi ,  Masahiro Maruhashi

公开(公告)号：USD620566S1

公开(公告)日：2010-07-27

申请号：US29346126

申请日：2009-10-27

申请人： Rina Ogata ,  Yasushi Takahashi ,  Hiroyuki Takeuchi

设计人： Rina Ogata ,  Yasushi Takahashi ,  Hiroyuki Takeuchi

公开(公告)号：US07717002B2

公开(公告)日：2010-05-18

申请号：US11915525

申请日：2006-05-23

申请人： Yasushi Takahashi

发明人： Yasushi Takahashi

IPC分类号： G01N1/10

CPC分类号： G01N1/2252 ,  G01N2001/2264

摘要： An exhaust gas dilution device 1 is to prevent a temperature of dilution gas from being raised under the influence of the temperature of the exhaust gas before the dilution gas is mixed with the exhaust gas. The exhaust gas dilution device 1 comprises an exhaust gas circulation pipe 101 to circulate the exhaust gas G, a mixing section 102 that is arranged in the exhaust gas circulation pipe 101 and that has an orifice 17, and a dilution gas supply pipe 14 that opens at the mixing section 102 and that supplies dilution gas W to the exhaust gas circulation pipe 101. The dilution gas supply pipe 14 is arranged spaced apart from the exhaust gas circulation pipe 101 until it reaches the mixing section 102.

摘要翻译： 排气稀释装置1是在稀释气体与废气混合之前，在排气温度的影响下，防止稀释气体的温度升高。 废气稀释装置1包括使排气G循环的排气循环管101，配置在排气循环管101中并具有孔17的混合部102和打开的稀释气体供给管14 并且将稀释气体W供给到排气循环管道101.稀释气体供给管14与排气循环管101间隔开配置，直至到达混合部102。

公开(公告)号：US07627823B2

公开(公告)日：2009-12-01

申请号：US11602874

申请日：2006-11-21

申请人： Yasushi Takahashi ,  Kazuo Sugiyama ,  Makoto Watanabe

发明人： Yasushi Takahashi ,  Kazuo Sugiyama ,  Makoto Watanabe

IPC分类号： G06F3/00

CPC分类号： H04N5/262 ,  G06K9/00751 ,  G11B27/024 ,  G11B27/026 ,  G11B27/031 ,  G11B27/032 ,  G11B27/034 ,  G11B27/11 ,  G11B2220/216 ,  G11B2220/2575 ,  G11B2220/90 ,  H04N9/8045

摘要： A regular edition video of a video title is split into shots or scenes with time codes, and provided information, which is the semantic evaluation of the story, is added to the respective scenes to organize the scene score. Necessary scenes for each purpose are extracted on the basis of the scene score and a threshold value (process Pr14). Video characteristic evaluation information is added for each shot constituting each of the extracted scenes so as to organize the shot score (process Pr16). Optimum shots for each of the extracted scenes are selected on the basis of a predetermined rule suitable for the purpose (process Pr16). The optimum shots are sequentially cut out from the regular edition video (process Pr21), thus automatically organizing a preview video suitable for the purpose (process Pr22).

摘要翻译： 视频标题的常规视频被分割成具有时间码的镜头或场景，并且将提供的信息作为故事的语义评估添加到各个场景中以组织场景得分。 基于场景分数和阈值（处理Pr14）提取用于各目的的必要场景。 为构成每个提取的场景的每个镜头添加视频特征评估信息，以组织拍摄分数（处理Pr16）。 基于适合于该目的的预定规则（处理Pr16）来选择每个提取的场景的最佳拍摄。 从常规视频（处理Pr21）顺序地切出最佳照片，从而自动组织适合于目的的预览视频（处理Pr22）。

公开(公告)号：US20080211082A1

公开(公告)日：2008-09-04

申请号：US12149183

申请日：2008-04-29

申请人： Toshinori Hirashima ,  Munehisa Kishimoto ,  Toshiyuki Hata ,  Yasushi Takahashi

发明人： Toshinori Hirashima ,  Munehisa Kishimoto ,  Toshiyuki Hata ,  Yasushi Takahashi

IPC分类号： H01L23/52

CPC分类号： H01L21/561 ,  H01L21/565 ,  H01L23/4951 ,  H01L23/49562 ,  H01L24/81 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/16245 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2224/81801 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/05541 ,  H01L2224/05005 ,  H01L2224/05624 ,  H01L2224/05099 ,  H01L2924/00012

摘要： A semiconductor device and method having high output and having reduced external resistance is reduced and improved radiating performance. A MOSFET (70) has a connecting portion for electrically connecting a surface electrode of a semiconductor pellet and a plurality of inner leads, a resin encapsulant (29), a plurality of outer leads (37), (38) protruding in parallel from the same lateral surface of the resin encapsulant (29) and a header (28) bonded to a back surface of the semiconductor pellet and having a header protruding portion (28c) protruding from a lateral surface of the resin encapsulant (29) opposite to the lateral surface from which the outer leads protrude, wherein the header (28) has an exposed surface (28b) exposed from the resin encapsulant (29); the outer leads (37), (38) are bent; and the exposed of the outer leads (37), (38) are provided at substantially the same height.

公开(公告)号：US20080169537A1

公开(公告)日：2008-07-17

申请号：US12046741

申请日：2008-03-12

申请人： Ryoichi KAJIWARA ,  Masahiro Koizumi ,  Toshiaki Morita ,  Kazuya Takahashi ,  Munehisa Kishimoto ,  Shigeru Ishii ,  Toshinori Hirashima ,  Yasushi Takahashi ,  Toshiyuki Hata ,  Hiroshi Sato ,  Keiichi Ookawa

发明人： Ryoichi KAJIWARA ,  Masahiro Koizumi ,  Toshiaki Morita ,  Kazuya Takahashi ,  Munehisa Kishimoto ,  Shigeru Ishii ,  Toshinori Hirashima ,  Yasushi Takahashi ,  Toshiyuki Hata ,  Hiroshi Sato ,  Keiichi Ookawa

IPC分类号： H01L23/495

CPC分类号： H01L23/49555 ,  H01L21/4814 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L23/28 ,  H01L23/3107 ,  H01L23/495 ,  H01L23/4952 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/49582 ,  H01L24/11 ,  H01L24/13 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/81 ,  H01L24/83 ,  H01L24/84 ,  H01L24/97 ,  H01L29/7833 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/16245 ,  H01L2224/29011 ,  H01L2224/29015 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/73253 ,  H01L2224/75251 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2224/83101 ,  H01L2224/83138 ,  H01L2224/83191 ,  H01L2224/83825 ,  H01L2224/8385 ,  H01L2224/83851 ,  H01L2224/84801 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H05K3/3426 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/01049 ,  H01L2924/01083 ,  H01L2224/29139 ,  H01L2924/3512 ,  H01L2224/48 ,  H01L2924/00012

摘要： A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.

摘要翻译： 一种半导体器件，其中第一金属部件经由包含第一贵金属的第一金属体接合到半导体元件的第一电极，并且第二金属部件经由包含第二贵金属的第二金属体接合到第二电极 金属。

公开(公告)号：US20080116671A1

公开(公告)日：2008-05-22

申请号：US10559658

申请日：2004-12-06

申请人： Yasushi Takahashi

发明人： Yasushi Takahashi

IPC分类号： B60R21/013 ,  H01L25/00

CPC分类号： H01L23/49589 ,  B60R2021/26029 ,  F42B3/13 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/05554 ,  H01L2224/32245 ,  H01L2224/40245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/8385 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19106 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012

摘要： A semiconductor device has the package structure which used the lead frame, a communication device (semiconductor chip) is arranged to the main surface side of a supporting body, and the condenser for firing is arranged to the back side of the opposite side to the main surface of said supporting body. By having such structure, a miniaturization, the reduction of a manufacturing cost, and high reliability of a semiconductor device and an ignition device can be aimed at.

摘要翻译： 半导体器件具有使用引线框架的封装结构，在支撑体的主表面侧设置有通信装置（半导体芯片），并且用于点火的冷凝器配置在与主体相反的一侧的背面 所述支撑体的表面。 通过这样的结构，可以针对半导体装置和点火装置的小型化，制造成本的降低和高可靠性。

公开(公告)号：US07342267B2

公开(公告)日：2008-03-11

申请号：US11415290

申请日：2006-05-02

申请人： Ryoichi Kajiwara ,  Masahiro Koizumi ,  Toshiaki Morita ,  Kazuya Takahashi ,  Munehisa Kishimoto ,  Shigeru Ishii ,  Toshinori Hirashima ,  Yasushi Takahashi ,  Toshiyuki Hata ,  Hiroshi Sato ,  Keiichi Ookawa

发明人： Ryoichi Kajiwara ,  Masahiro Koizumi ,  Toshiaki Morita ,  Kazuya Takahashi ,  Munehisa Kishimoto ,  Shigeru Ishii ,  Toshinori Hirashima ,  Yasushi Takahashi ,  Toshiyuki Hata ,  Hiroshi Sato ,  Keiichi Ookawa

IPC分类号： H01L29/94 ,  H01L21/00 ,  H01R9/00

CPC分类号： H01L23/49555 ,  H01L21/4814 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L23/28 ,  H01L23/3107 ,  H01L23/495 ,  H01L23/4952 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/49582 ,  H01L24/11 ,  H01L24/13 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/81 ,  H01L24/83 ,  H01L24/84 ,  H01L24/97 ,  H01L29/7833 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/16245 ,  H01L2224/29011 ,  H01L2224/29015 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/73253 ,  H01L2224/75251 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2224/83101 ,  H01L2224/83138 ,  H01L2224/83191 ,  H01L2224/83825 ,  H01L2224/8385 ,  H01L2224/83851 ,  H01L2224/84801 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H05K3/3426 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/01049 ,  H01L2924/01083 ,  H01L2224/29139 ,  H01L2924/3512 ,  H01L2224/48 ,  H01L2924/00012

摘要： A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.

摘要翻译： 一种半导体器件，其中第一金属部件经由包含第一贵金属的第一金属体接合到半导体元件的第一电极，并且第二金属部件经由包含第二贵金属的第二金属体接合到第二电极 金属。