Method and apparatus for vacuum diode-based devices with
electride-coated electrodes
    72.
    发明授权
    Method and apparatus for vacuum diode-based devices with electride-coated electrodes 失效
    具有电极涂覆电极的基于真空二极管的器件的方法和装置

    公开(公告)号:US5675972A

    公开(公告)日:1997-10-14

    申请号:US719792

    申请日:1996-09-25

    Abstract: Vacuum diode-based devices, including Vacuum Diode Heat Pumps and Vacuum Thermionic Generators, are described in which the electrodes are coated with an electride. These materials have low work functions, which means that contact potential difference between cathode and anode may be set against the effects of space charge, resulting in an improved device whereby anode and cathode may be set at a greater distance from each other than has been previously envisaged.

    Abstract translation: 描述了真空二极管的装置,其中包括真空二极管热泵和真空热电偶发生器,其中电极涂覆有电极。 这些材料具有低功函数,这意味着阴极和阳极之间的接触电位差可以针对空间电荷的影响来设定,从而得到改进的装置,由此阳极和阴极可以被设置在彼此之前比之前更大的距离 设想了

    Selectively shaped field emission electron beam source, and phosphor
array for use therewith
    75.
    发明授权
    Selectively shaped field emission electron beam source, and phosphor array for use therewith 失效
    选择形状的场发射电子束源和与其​​一起使用的荧光体阵列

    公开(公告)号:US5583393A

    公开(公告)日:1996-12-10

    申请号:US217416

    申请日:1994-03-24

    Applicant: Gary W. Jones

    Inventor: Gary W. Jones

    Abstract: A field emitter device for selective emission of an electron and/or ion beam comprising a substrate member having an array of field emitter elements thereon, in which the field emitter elements and/or substrate member have a varied conformation producing a beam of appropriate focused and/or directional character. Also disclosed is a display article for producing an output in response to impingement of electron beams thereon, comprising a substrate member on which is disposed an array of phosphor elements, with a diamond-like film coated on the phosphor elements to maintain the phosphor elements in position on the substrate member. Also disclosed is a field emission apparatus comprising such field emitter device and display article, such as a flat panel display.

    Abstract translation: 一种用于选择性地发射电子和/或离子束的场发射器件,包括其上具有阵列的场发射极元件的衬底构件,其中场发射极元件和/或衬底构件具有变化的构象,产生适当聚焦的光束, /或方向角色。 还公开了一种用于响应于其上的电子束的撞击而产生输出的显示器件,包括:衬底构件,荧光体元件阵列上布置有金刚石膜,以将荧光体元件保持在 位置。 还公开了包括这样的场发射器装置和显示制品的场致发射装置,例如平板显示器。

    Triode structure flat panel display employing flat field emission cathode
    76.
    发明授权
    Triode structure flat panel display employing flat field emission cathode 失效
    采用平场发射阴极的三极结构平板显示器

    公开(公告)号:US5548185A

    公开(公告)日:1996-08-20

    申请号:US458854

    申请日:1995-06-02

    Abstract: A flat panel display of a field emission type having a triode (three terminal) structure and useful as a device for displaying visual information is disclosed. The display includes a plurality of corresponding light-emitting anodes and field-emission cathodes, each of the anodes emitting light in response to emission from each of the corresponding cathodes, each of the cathodes including a layer of low work function material having a relatively flat emission surface which includes a plurality of distributed localized electron emission sites and a grid assembly positioned between the corresponding anodes and cathodes to thereby control emission levels to the anodes from the corresponding cathodes. In the preferred embodiment of the invention, the layer of low work function material is amorphic diamond film. The grid assembly includes a conductive layer deposited between the plurality of anodes and cathodes and over interstices between the cathodes, the conductive layer having apertures therein, the cathodes aligned with, and of the same size as, the apertures.

    Abstract translation: 公开了一种具有三极管(三端子)结构的场发射型平板显示器,并且可用作显示视觉信息的装置。 显示器包括多个对应的发光阳极和场发射阴极,每个阳极响应于每个相应阴极的发射而发光,每个阴极包括具有相对平坦的低功函数材料层 发射表面,其包括多个分布的局部电子发射位点和位于相应阳极和阴极之间的栅格组件,从而控制来自相应阴极的阳极的发射水平。 在本发明的优选实施例中,低功函数材料层是非晶金刚石膜。 栅格组件包括沉积在多个阳极和阴极之间的导电层以及阴极之间的间隙,导电层在其中具有孔,阴极与孔对准并具有与孔相同的尺寸。

    Method for making a silicon field emission device
    80.
    发明授权
    Method for making a silicon field emission device 失效
    制造硅场致发射器件的方法

    公开(公告)号:US5401676A

    公开(公告)日:1995-03-28

    申请号:US114134

    申请日:1993-08-30

    Applicant: Kang-ok Lee

    Inventor: Kang-ok Lee

    CPC classification number: H01J9/025 H01J2201/30426 H01J2209/0226

    Abstract: A method is disclosed for making a silicon emission emitter for use as electron sources for various display elements, light sources, high-speed switching devices, and micro-sensors. The method relates to the formation of a tip portion of an emitter and an electron range by using a silicide material having a high melting point and a low work function. The emitter tip and electron range formed by the silicide material is a predetermined distance away from an oxide film, therefore, the emission characteristic of the emitter is efficiently strengthened, and the leakage current is, thereby, reduced due to the prevention of the metallic contamination to the insulating layers.

    Abstract translation: 公开了一种用于制造用作各种显示元件,光源,高速开关器件和微传感器的电子源的硅发射发射器的方法。 该方法涉及通过使用具有高熔点和低功函数的硅化物材料形成发射极的尖端部分和电子范围。 由硅化物材料形成的发射极尖端和电子范围距离氧化膜预定距离,因此,发射极的发射特性被有效地加强,并且由于防止金属污染而使漏电流减小 到绝缘层。

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