公开(公告)号：US4782035A

公开(公告)日：1988-11-01

申请号：US119724

申请日：1987-11-12

Applicant: Masatoshi Fujiwara

Inventor： Masatoshi Fujiwara

IPC: H01S5/00 ,  H01S5/12 ,  H01S3/19 ,  H01L21/208

CPC classification number: H01S5/1228 ,  Y10S148/048 ,  Y10S148/095 ,  Y10S148/119 ,  Y10S148/143

Abstract: A method for producing a semiconductor laser comprising depositing a first semiconductor layer comprising n-type InP on an n-type InP substrate, depositing a diffraction grating of InGaAsP which includes or excludes doping impurities on the first semiconductor layer with irradiating interference fringes by a light excitation crystalline growth means, and burying a portion of the diffraction grating with InGaAsP including or excluding doping impurities with irradiating interference fringes reverse in light and darkness from said interference fringes used in depositing the diffraction grating.

Abstract translation: 一种制造半导体激光器的方法，包括在n型InP衬底上沉积包含n型InP的第一半导体层，在第一半导体层上沉积包含或排除掺杂杂质的InGaAsP衍射光栅，用光照射干涉条纹 激发晶体生长手段，并且包括或排除掺杂杂质的InGaAsP的一部分衍射光栅，其在来自用于沉积衍射光栅的所述干涉条纹的光和黑暗中具有相反的干涉条纹。

公开(公告)号：US4745607A

公开(公告)日：1988-05-17

申请号：US916498

申请日：1986-10-08

Applicant: Thomas L. Koch

Inventor： Thomas L. Koch

IPC: G02B6/122 ,  G02B6/12 ,  H01L31/103 ,  H01S5/00 ,  H01S5/04 ,  H01S5/10 ,  H01S5/12 ,  H01S3/19

CPC classification number: G02B6/12007 ,  G02B6/12002 ,  H01L31/1035 ,  H01S5/1032 ,  H01S5/041 ,  H01S5/1228

Abstract: A grating in the upper reflecting layer (103 or 203) of an antiresonant reflecting optical waveguide is used to extract energy of a selected wavelength from the waveguiding layer (102 or 202) into the reflecting layer. In one embodiment the reflecting layer (103) is designed as a gain medium which is pumped in the region of a grating (120) and optically terminated at each end of the device such that the embodiment serves as a laser having a long cavity provided by the waveguiding layer (102) with the gain provided in the short grating region. In a second embodiment the reflecting layer (203) in the region of a grating (211) has an opposite conductivity dopant from that of the waveguiding layer (202) such that the device in this region may be backbiased to serve as a wavelength selective photodetector. By placing two wavelength photodetectors in tandem with gratings (211 and 212)of different pitches a wavelength demultiplexing photodetector is provided.

Abstract translation: 使用反谐振反射光波导的上反射层（103或203）中的光栅将所选波长的能量从波导层（102或202）提取到反射层。 在一个实施例中，反射层（103）被设计为增益介质，该增益介质被泵浦在光栅（120）的区域中并在设备的每个端部处光学端接，使得该实施例用作具有由 具有增益的波导层（102）设置在短光栅区域中。 在第二实施例中，光栅（211）区域中的反射层（203）具有与波导层（202）的反射层相反的导电性掺杂剂，使得该区域中的器件可以被反偏置以用作波长选择性光电探测器 。 通过将两个波长光电探测器与不同间距的光栅（211和212）串联，提供了一个波长解复用光电探测器。

公开(公告)号：US4305048A

公开(公告)日：1981-12-08

申请号：US89036

申请日：1979-10-29

Applicant: John A. Copeland, III

Inventor： John A. Copeland, III

IPC: H01S5/00 ,  H01S5/12 ,  H01S5/20 ,  H01S5/30 ,  H01S3/19

CPC classification number: H01S5/20 ,  H01S5/1228 ,  H01S5/305 ,  H01S5/2059 ,  H01S5/2063 ,  H01S5/3068

Abstract: Longitudinal mode control is achieved in a heterojunction semiconductor laser (201-208) by doping the active region (203) of the laser with a deep level electron or hole trap. The trap is chosen to have a carrier capture cross section .sigma..sub.e and an optical cross section .sigma..sub.o such that the ratio of P, the average number of photons per cubic centimeter, to P.sub.s is between 0.1 and 100 where P.sub.s is equal to (N.sigma..sub.e V/.sigma..sub.o C.sub.o), N is the carrier density, V is the carrier thermal velocity, and C.sub.o is the speed of light in the material. In a specific embodiment the active region is bombarded by photons to achieve deep level electron traps in the active region.

Abstract translation: 通过用深电子电子或空穴陷阱掺杂激光器的有源区（203），在异质结半导体激光器（201-208）中实现纵向模式控制。 陷阱被选择为具有载体捕获截面σ和光学横截面σ，使得P，每立方厘米的平均光子数与Ps的比率在0.1和100之间，其中Ps等于（N σeV / sigma oCo），N是载流子密度，V是载流子热速度，Co是材料中的光速。 在一个具体实施方案中，有源区被光子轰击以在有源区中实现深层次的电子陷阱。

公开(公告)号：US11664640B1

公开(公告)日：2023-05-30

申请号：US17394726

申请日：2021-08-05

Applicant: United States of America as represented by the Administrator of NASA

Inventor： Mark A. Stephen ,  Bowen Song ,  Jonathan Klamkin ,  Victoria Rosborough ,  Joseph Fridlander

IPC: H01S5/00 ,  H01S5/12 ,  H01S5/125 ,  H01S5/10

CPC classification number: H01S5/1225 ,  H01S5/1021 ,  H01S5/125 ,  H01S5/1209 ,  H01S5/1228 ,  H01S5/1237 ,  H01S5/124

Abstract: A non-etched gap is introduced along the length of an integrated Bragg grating with etched grooves such that the coupling coefficient, K, of the grating is reduced by the non-etched gap. In this way, multiple grating K values may be defined within a photonic integrated circuit using a single lithography and etch step. Additionally, the non-etched gap width may be varied along the length of a single grating to implement a chirped grating.

公开(公告)号：US20190115717A1

公开(公告)日：2019-04-18

申请号：US15922611

申请日：2018-03-15

Applicant: TRUELIGHT CORPORATION

Inventor： Chien Hung Pan ,  Cheng Zu Wu

IPC: H01S5/026 ,  H01S5/028 ,  H01S5/02 ,  H01S5/12

CPC classification number: H01S5/1203 ,  H01S5/0206 ,  H01S5/0268 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/1225 ,  H01S5/1228 ,  H01S5/124 ,  H01S5/22

Abstract: A structure of distributed feedback (DFB) laser includes a grating layer having a phase-shift grating structure and a gratingless area. In addition, both side-surfaces of the DFB laser are coated with anti-reflection coating to improve SMSR and to obtain good slope efficiency (SE). The grating layer is divided by the phase-shift grating structure in a horizontal direction into a first grating area and a second grating area adjacent to a laser-out surface of the DFB laser. The phase-shift grating structure provides a phase-difference distance, such that a shift of phase exists between the micro-grating structures located within the first grating area and the other micro-grating structures located within the second grating area. The gratingless area located within the second grating area contains no micro-grating structure, and moreover, the gratingless area will not change the phase of the micro-grating structures located within the second grating area.

公开(公告)号：US20160380407A1

公开(公告)日：2016-12-29

申请号：US15039837

申请日：2013-12-27

Applicant: Matthew SYSAK ,  Jock BOVINGTON

Inventor： Matthew Sysak ,  Jock Bovington

IPC: H01S5/12 ,  H04B10/80 ,  H04B10/66 ,  H01S5/30 ,  H01S5/065

CPC classification number: H01S5/1228 ,  G02B6/1228 ,  G02B6/124 ,  H01S5/021 ,  H01S5/0654 ,  H01S5/1014 ,  H01S5/1032 ,  H01S5/1206 ,  H01S5/1225 ,  H01S5/1231 ,  H01S5/1237 ,  H01S5/22 ,  H01S5/3013 ,  H04B10/66 ,  H04B10/801

Abstract: Monolithic asymmetric optical waveguide grating resonators including an asymmetric resonant grating are disposed in a waveguide. A first grating strength is provided along a first grating length, and a second grating strength, higher than the first grating strength, is provided along a second grating length. In advantageous embodiments, the effective refractive index along first grating length is substantially matched to the effective refractive index along second grating length through proper design of waveguide and grating parameters. A well-matched effective index of refraction may permit the resonant grating to operate in a highly asymmetric single longitudinal mode (SLM). In further embodiments, an asymmetric monolithic DFB laser diode includes front and back grating sections having waveguide and grating parameters for highly asymmetric operation.

Abstract translation: 包括非对称谐振光栅的单片非对称光波导光栅谐振器设置在波导中。 沿着第一光栅长度提供第一光栅强度，并且沿着第二光栅长度提供高于第一光栅强度的第二光栅强度。 在有利的实施例中，通过波导和光栅参数的适当设计，沿着第一光栅长度的有效折射率基本上与第二光栅长度的有效折射率匹配。 良好匹配的有效折射率可以允许谐振光栅以高度不对称的单纵模（SLM）工作。 在另外的实施例中，不对称单片DFB激光二极管包括具有用于高度不对称操作的波导和光栅参数的前后光栅部分。

公开(公告)号：US20160233645A1

公开(公告)日：2016-08-11

申请号：US14614633

申请日：2015-02-05

Applicant: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.

Inventor： Martin MÖHRLE

IPC: H01S5/12 ,  H01S5/10 ,  H01S5/125

CPC classification number: H01S5/1228 ,  H01S5/0265 ,  H01S5/06256 ,  H01S5/06258 ,  H01S5/101 ,  H01S5/1085 ,  H01S5/125 ,  H01S5/141 ,  H01S5/50

Abstract: A combined Gain-SOA (Semiconductor Optical Amplifier) Chip is provided for forming a hybrid laser by a combination with an external reflector, the Gain-SOA Chip comprising a gain section and an SOA section, wherein an optical grating is arranged between the gain section and the SOA section.

Abstract translation: 提供了组合的增益SOA（半导体光放大器）芯片，用于通过与外部反射器的组合形成混合激光器，该增益SOA芯片包括增益部分和SOA部分，其中光栅布置在增益部分之间 和SOA部分。

公开(公告)号：US09385509B2

公开(公告)日：2016-07-05

申请号：US14725692

申请日：2015-05-29

Applicant: Thorlabs Quantum Electronics, Inc.

Inventor： Catherine Genevieve Caneau ,  Lawrence Charles Hughes, Jr. ,  Feng Xie ,  Chung-En Zah

IPC: H01S3/10 ,  H01S5/34 ,  H01S5/028 ,  H01S5/06 ,  H01S5/0625 ,  H01S5/12 ,  B82Y20/00 ,  H01S3/1055 ,  H01S5/00 ,  H01S5/0687 ,  H01S5/10 ,  H01S5/40

CPC classification number: H01S5/0687 ,  B82Y20/00 ,  H01S3/1055 ,  H01S5/0014 ,  H01S5/028 ,  H01S5/0612 ,  H01S5/06256 ,  H01S5/06258 ,  H01S5/1096 ,  H01S5/1218 ,  H01S5/1228 ,  H01S5/125 ,  H01S5/3401 ,  H01S5/3402 ,  H01S5/4043 ,  H01S5/4087

Abstract: A monolithic tunable mid-infrared laser has a wavelength range within the range of 3-14 μm and comprises a heterogeneous quantum cascade active region together with at least a first integrated grating. The heterogeneous quantum cascade active region comprises at least one stack, the stack comprising two, desirably at least three differing stages. Methods of operating and calibrating the laser are also disclosed.

Abstract translation: 单片可调谐中红外激光器的波长范围在3-14μm的范围内，并且包括非均质量子级联有源区以及至少第一集成光栅。 非均质量子级联有源区包括至少一个堆叠，堆叠包括两个，期望地至少三个不同的阶段。 还公开了操作和校准激光器的方法。

公开(公告)号：US09236707B1

公开(公告)日：2016-01-12

申请号：US14616161

申请日：2015-02-06

Applicant: INSTITUT NATIONAL D'OPTIQUE

Inventor： Louis Desbiens

IPC: H01S3/10 ,  H01S5/042 ,  H01S5/0625 ,  H01S5/065 ,  H01S5/183 ,  H01S5/125 ,  H01S5/022 ,  H01S5/00 ,  H01S5/0683 ,  H01S3/00 ,  H01S5/12 ,  H01S5/187

CPC classification number: H01S3/0057 ,  H01S5/0057 ,  H01S5/02284 ,  H01S5/0428 ,  H01S5/06216 ,  H01S5/0622 ,  H01S5/06226 ,  H01S5/06835 ,  H01S5/12 ,  H01S5/1228 ,  H01S5/187

Abstract: A system and method generate laser pulses. Using the modulation signal from a pulse generation module, a seed laser diode generates seed light pulses in response to direct drive current modulation. The seed light pulses have a pulse duration longer than a target pulse duration and a spectral chirp. A compression module has dispersion characteristics over a broad spectral range. The pulse generation module is configured to adapt the modulation signal to tailor the spectral chirp of the seed light pulses in view of the dispersion characteristics of the compression module, such that propagation of the seed light pulses through the compression module compresses the seed pulses into output light pulses having the target pulse duration.

Abstract translation: 系统和方法产生激光脉冲。 使用来自脉冲发生模块的调制信号，种子激光二极管响应于直接驱动电流调制而产生种子光脉冲。 种子光脉冲的脉冲持续时间长于目标脉冲持续时间和光谱啁啾。 压缩模块在宽光谱范围内具有色散特性。 考虑到压缩模块的色散特性，脉冲发生模块被配置为使调制信号适应种子光脉冲的光谱啁啾，使得通过压缩模块的种子光脉冲的传播将种子脉冲压缩成输出 具有目标脉冲持续时间的光脉冲。

公开(公告)号：US20150162724A1

公开(公告)日：2015-06-11

申请号：US14103223

申请日：2013-12-11

Applicant: Wisconsin Alumni Research Foundation

Inventor： Luke J. Mawst ,  Dan Botez ,  Thomas L. Earles ,  Jeremy D. Kirch ,  Christopher A. Sigler

IPC: H01S5/34 ,  H01S5/187 ,  H01S5/343

CPC classification number: H01S5/3401 ,  H01S5/1046 ,  H01S5/1228 ,  H01S5/187 ,  H01S5/3402 ,  H01S5/34306 ,  H01S2301/145

Abstract: Semiconductor lasers comprise a substrate; an active layer configured to generate transverse magnetic (TM) polarized light under an electrical bias; an upper cladding layer; a lower cladding layer; and a distributed feedback (DFB) grating defined by the interface of a layer of metal and a layer of semiconductor under the layer of metal, the interface periodically corrugated in the longitudinal direction of the laser with a periodicity of ΛDFB=mλ/(2neff), wherein m>1. The DFB grating is configured such that loss of one or more antisymmetric longitudinal modes of the laser structure via absorption to the DFB grating is sufficiently maximized so as to produce lasing of a symmetric longitudinal mode of the laser with laser emission characterized by a single-lobe beam along each direction defined by the grating diffraction orders corresponding to emission away from the plane of the grating.

Abstract translation: 半导体激光器包括衬底; 有源层，被配置为在电偏压下产生横向磁（TM）偏振光; 上包层; 下包层; 以及由金属层与金属层之间的半导体界面界定的分布式反馈（DFB）光栅，该界面在激光器的纵向方向周期性地波纹，周期为ΛDFB=mλ/（2neff） 其中m> 1。 DFB光栅被配置为使得激光器结构经由吸收到DFB光栅的一个或多个反对称纵向模式的损耗被充分地最大化，以便产生具有以单瓣为特征的激光发射的激光的对称纵向模式的激光 沿着由对应于离开光栅平面的发射的光栅衍射级限定的每个方向的光束。