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    Field emitter having source, channel, and drain layers
    71.
    发明授权
    Field emitter having source, channel, and drain layers 失效
    具有源极，沟道和漏极层的场致发射体

    公开(公告)号：US5710478A

    公开(公告)日：1998-01-20

    申请号：US698260

    申请日：1996-08-14

    Applicant: Seigo Kanemaru ,  Junji Itoh

    Inventor： Seigo Kanemaru ,  Junji Itoh

    IPC: H01J1/304 ,  H01J1/308 ,  H01J1/30 ,  H01J19/24

    CPC classification number: H01J3/022 ,  H01J1/3042 ,  H01J1/308 ,  H01J2201/319

    Abstract: A field emission device of simple structure enables stabilization and control of field emission current. A three-dimensional emitter formed on a base member incorporates therein a source layer on the side in contact with the base member, a drain layer on the side of the distal end including a tip and a channel region layer between the source layer and the drain layer. A gate is formed near the emitter. A strong electric field generated by applying a voltage to the gate causes cold electrons to be emitted from the emitter tip and the voltage applied to the gate also controls the conductivity of the channel region layer, whereby the field emission current emitted from the tip of the emitter is stabilized and controlled.

    Abstract translation: 具有简单结构的场致发射器件可实现场发射电流的稳定和控制。 形成在基底构件上的三维发射体在其中包括与基底构件接触的一侧的源极层，在远端侧的漏极层包括尖端和在源极层和漏极之间的沟道区域层 层。 在发射极附近形成栅极。 通过向栅极施加电压产生的强电场使得发射极尖端发出冷电子，并且施加到栅极的电压也控制沟道区域层的导电性，从而从 发射极稳定并受到控制。

    Electron tube comprising a semiconductor cathode
    72.
    发明授权
    Electron tube comprising a semiconductor cathode 失效
    包括半导体阴极的电子管

    公开(公告)号：US5604355A

    公开(公告)日：1997-02-18

    申请号：US442565

    申请日：1995-05-16

    Applicant: Tom Van Zutphen

    Inventor： Tom Van Zutphen

    IPC: H01J1/304 ,  H01J1/308 ,  H01J29/04

    CPC classification number: H01J29/04 ,  H01J1/308

    Abstract: By providing a semiconductor device such as a cold cathode (7) with extra zener or avalanche structures (26, 27 and 32, 33, respectively) a robust structure is obtained which is resistant to damage during manufacture and use of a vacuum tube. The semiconductor zones (26, 27, 32, 33) are thus also utilized for realizing electron optics (particle optics).

    Abstract translation: 通过提供具有额外的齐纳或雪崩结构（分别为26,27和32,33）的冷阴极（7）的半导体器件，获得了坚固的结构，其在真空管的制造和使用期间耐受损坏。 因此，半导体区域（26,27,32,33）也用于实现电子光学（粒子光学）。

    Heterostructure electron emitter utilizing a quantum well
    73.
    发明授权
    Heterostructure electron emitter utilizing a quantum well 失效
    异质结电子发射体利用量子阱

    公开(公告)号：US5442192A

    公开(公告)日：1995-08-15

    申请号：US187258

    申请日：1994-01-27

    Applicant: Herbert Goronkin ,  Lawrence N. Dworsky

    Inventor： Herbert Goronkin ,  Lawrence N. Dworsky

    IPC: H01J1/308 ,  H01L27/14 ,  H01L29/161

    CPC classification number: H01J1/308

    Abstract: A heterostructure electron emitter including a substrate having a surface with a predetermined potential barrier and a quantum well formed in the substrate adjacent the surface. Contacts are positioned on the substrate for coupling free electrons to the substrate and into the quantum well. An acoustic wave device is positioned on the substrate so as to direct acoustic waves to strike the free electrons in the quantum well and excite the free electrons sufficiently to cause the free electrons to overcome the potential barrier and to be emitted from the surface of the substrate.

    Abstract translation: 异质结构电子发射体包括具有预定势垒的表面的衬底和与衬底相邻的表面形成的量子阱。 触点位于衬底上，用于将自由电子耦合到衬底并进入量子阱。 声波器件位于衬底上，以引导声波冲击量子阱中的自由电子，并充分激发自由电子，使自由电子克服势垒并从衬底的表面发射 。

    Cold cathode device
    75.
    发明授权
    Cold cathode device 失效
    冷阴极装置

    公开(公告)号：US4994708A

    公开(公告)日：1991-02-19

    申请号：US515352

    申请日：1990-04-30

    Applicant: Akira Shimizu ,  Takeo Tsukamoto ,  Akira Suzuki ,  Masao Sugata ,  Isamu Shimoda ,  Masahiko Okunuki

    Inventor： Akira Shimizu ,  Takeo Tsukamoto ,  Akira Suzuki ,  Masao Sugata ,  Isamu Shimoda ,  Masahiko Okunuki

    IPC: H01J1/308 ,  H01J21/10

    CPC classification number: H01J1/308 ,  H01J21/105

    Abstract: A cold cathode device wherein a cold cathode and an anode face each other with an electron transit path intermediated therebetween, and one or more control electrodes structurally insulated from the said cathode and the anode, are provided exposing to the electron transit path. A cold cathode vacuum tube has an electron emission element having a p-type semiconductor region on an electron emission side and a work function lowering region with junctional relation to the p-type semiconductor region; and a plate electrode structurally insulated from the electron emission element by using an insulation layer which is formed with an electron transmit path corresponding in position to an electron emission area of the electron emission element.

    Abstract translation: 一种冷阴极器件，其中冷阴极和阳极彼此面对并具有中间的电子传输路径，以及与所述阴极和阳极结构绝缘的一个或多个控制电极暴露于电子传输路径。 冷阴极真空管具有在电子发射侧具有p型半导体区域的电子发射元件和与p型半导体区域具有连接关系的功函数降低区域; 以及通过使用形成有与电子发射元件的电子发射区域相对应的电子发射路径的绝缘层与电子发射元件结构地绝缘的平板电极。

    Device for the multiplication of charge carriers by an avalanche phenomenon and application of the said device to photosensors, photocathodes and infrared viewing devices
    76.
    发明授权
    Device for the multiplication of charge carriers by an avalanche phenomenon and application of the said device to photosensors, photocathodes and infrared viewing devices 失效
    用于通过雪崩现象使电荷载体倍增的装置，并将所述装置应用于感光器，光电阴极和红外观察装置

    公开(公告)号：US4907042A

    公开(公告)日：1990-03-06

    申请号：US130647

    申请日：1987-12-09

    Applicant: Armand Tardella ,  Thierry Weil ,  Borge Vinter

    Inventor： Armand Tardella ,  Thierry Weil ,  Borge Vinter

    IPC: H01L31/0264 ,  H01J1/30 ,  H01J1/308 ,  H01J1/34 ,  H01L27/14 ,  H01L27/146 ,  H01L29/86 ,  H01L31/0352 ,  H01L31/09 ,  H01L31/107 ,  H01L31/111 ,  H01L31/153

    CPC classification number: B82Y20/00 ,  H01L31/035236 ,  H01L31/1075 ,  H01L31/111 ,  H01L31/153

    Abstract: A device for the multiplication of charge carriers of a given type by an avalanche phenomenon includes:a semiconductor material of homogeneous composition, placed in an electrical field.Perpendicular to the working field, plane and parallel layers which are thin as compared with the thickness of the material separating them, are made in this material and are n-doped or p-doped depending on the type of charge carrier, the said layers forming reservoirs where charge carriers of the said type are confined. The injection of at least one charge carrier of the said type in the charge carrier multiplying device sets off the multiplication of charge carriers through a process of impact ionization. This charge carrier is accelerated by the working field and thus acquires energy sufficient to make it capable of ejecting a charge carrier of the said type from the doped layer. The charge carriers obtained are guided by the working field. This impact ionization process is repeated from one layer to the next, and thus constitutes an avalanche multiplication phenomenon. The device can be applied to photosensors, photocathodes and infrared viewing devices.

    Abstract translation: 用于通过雪崩现象乘法给定类型的电荷载体的装置包括：放置在电场中的均匀组成的半导体材料。 垂直于工作场，与分离它们的材料的厚度相比薄的平面和平行层在该材料中制成，并且根据电荷载体的类型是n掺杂或p掺杂的，所述层形成 所述类型的电荷载体被限制的储存器。 在电荷载体倍增装置中注入所述类型的至少一个电荷载体通过冲击电离的过程来设定载流子的乘法。 该载流子被工作场加速，从而获得足以使其能够从掺杂层喷射所述类型的电荷载体的能量。 获得的电荷载体由工作场引导。 这种冲击电离过程从一层到另一层重复，从而构成雪崩倍增现象。 该设备可应用于光电传感器，光电阴极和红外观察设备。

    Device for producing or amplifying coherent radiation
    78.
    发明授权
    Device for producing or amplifying coherent radiation 失效
    用于产生或放大相干辐射的装置

    公开(公告)号：US4631731A

    公开(公告)日：1986-12-23

    申请号：US576974

    申请日：1984-02-03

    Applicant: Joachim H. Wolter ,  Robert E. Horstman

    Inventor： Joachim H. Wolter ,  Robert E. Horstman

    IPC: H01S5/00 ,  H01J1/308 ,  H01S3/0959 ,  H01S3/09

    CPC classification number: H01J1/308 ,  H01S3/0959

    Abstract: A device for producing or amplifying coherent radiation includes a semiconductor device such as a laser. By means of electrons of high energy produced by a semiconductor cathode of the device, population inversion is obtained in an active layer of the laser structure. In this manner, laser action is obtained, which offers advantages, especially with II-VI materials which emit radiation of a wavelength shorter than the usual III-V materials, and which do not permit the desired population inversion to be obtained in the same manner as in III-V materials, by means of current injection across a pn junction. The semiconductor cathode and the laser structure can be arranged in mutual separation in a vacuum tube or be realized in one semiconductor body. The short-wave laser is especially advantageous for CD,DOR and VLP applications.

    Abstract translation: 用于产生或放大相干辐射的装置包括诸如激光器的半导体器件。 通过由器件的半导体阴极产生的高能量的电子，在激光器结构的有源层中获得群体反转。 以这种方式，获得激光作用，其具有优点，特别是对于发射比通常的III-V材料短的波长的II-VI材料，并且不能以相同的方式获得所需的群体反转 如在III-V材料中，通过在pn结上的电流注入。 半导体阴极和激光器结构可以在真空管中相互分离地布置或者在一个半导体本体中实现。 短波激光器对于CD，DOR和VLP应用尤为有利。

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