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    LIGHT DETECTOR
    71.
    发明申请
    LIGHT DETECTOR 审中-公开

    公开(公告)号：US20200249094A1

    公开(公告)日：2020-08-06

    申请号：US16636539

    申请日：2018-07-24

    申请人： HAMAMATSU PHOTONICS K.K.

    发明人： Masahiro YAMAZAKI ,  Katsumi SHIBAYAMA ,  Ryusuke KITAURA ,  Ryosuke KOIKE ,  Go TANAKA

    IPC分类号： G01J5/20 ,  G01J1/02 ,  G01J5/04 ,  G01J5/02 ,  H01L27/144 ,  H01L31/0248 ,  H01L31/09 ,  H01L31/0232

    摘要： A light detector includes a substrate, a membrane disposed on a surface of the substrate, a first and a second electrode post supporting the membrane. The first electrode post includes a first main body portion having a tubular shape spreading from a first electrode pad toward a side opposite to the substrate, and a first flange portion provided in an end portion at the side opposite to the substrate in the first main body portion. The first flange portion is provided with a first sloped surface inclined so as to approach the substrate as it goes away from the first main body portion. A first wiring layer reaches an inner surface of the first main body portion through the first sloped surface. The second electrode post and the second wiring layer are formed similarly to the first electrode post and the first wiring layer.

    Thin-film integrated spectrally-selective plasmonic absorber/ emitter for solar thermophotovoltaic applications
    73.
    发明授权
    Thin-film integrated spectrally-selective plasmonic absorber/ emitter for solar thermophotovoltaic applications 有权

    公开(公告)号：US10197711B2

    公开(公告)日：2019-02-05

    申请号：US13306975

    申请日：2011-11-29

    申请人： Gennady Shvets ,  Chih-Hui Wu

    发明人： Gennady Shvets ,  Chih-Hui Wu

    IPC分类号： H01L31/0248 ,  G02B5/00 ,  H02S10/30 ,  F24S70/20 ,  F24S60/00

    摘要： Thin-film integrated spectrally-selective plasmonic absorber/emitter (ISSAE) that is simultaneously (i) an efficient sunlight absorber; (ii) an efficient heat insulator that enables modest sunlight concentration to produce a high temperature by reducing infrared emission by a hot surface; (iii) a spectrally-selective infrared emitter that supplies infrared photons of the right energy to a targeted photovoltaic cell, thereby matching its bandgap. Additionally, said ISSAE is sufficiently thin to enable its use as a wrapping/cloaking material for use with hot storage pipes containing heat exchange fluid. Said ISSAE is incorporated into a number of solar-conversion apparatus, taking advantage of the unique properties of said ISSAE.

    Plasmonic graphene devices
    78.
    发明授权
    Plasmonic graphene devices 有权
    等离子体石墨烯装置

    公开(公告)号：US09172041B2

    公开(公告)日：2015-10-27

    申请号：US14322729

    申请日：2014-07-02

    申请人： Solan, LLC

    发明人： Mark Alan Davis

    IPC分类号： H01L31/028 ,  H01L49/00 ,  H01L29/16 ,  H01L31/0248 ,  H01L31/18

    CPC分类号： H01L49/006 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  G02B5/008 ,  H01L29/0665 ,  H01L29/1606 ,  H01L29/1608 ,  H01L31/0248 ,  H01L31/028 ,  H01L31/18 ,  Y02E10/547

    摘要： An integrated graphene-based structure comprises an N-dimensional array of elements formed on a surface of a substrate. The N-dimensional array of elements includes a plurality of rows. Each respective row in the plurality of rows comprises a corresponding plurality of elements formed along a first dimension. Each element in the corresponding plurality of elements comprising at least one graphene stack and separated from an adjacent element along the first dimension by a first average spatial separation thereby resulting in a first periodicity in lateral spacing along the first dimension. Each respective row in the plurality of rows is separated from an adjacent row along a second dimension by a second average spatial separation, thereby resulting in a second periodicity in lateral spacing along the second dimension. The N-dimensional array exhibits a set of characteristic electromagnetic interference properties in response to electromagnetic radiation incident on the N-dimensional array.

    摘要翻译： 集成的基于石墨烯的结构包括形成在基底表面上的元素的N维阵列。 元素的N维阵列包括多行。 多行中的每个行包括沿着第一维度形成的对应的多个元件。 相应的多个元件中的每个元件包括至少一个石墨烯堆叠并且沿着第一维度与相邻元件分开第一平均空间间隔，从而导致沿第一维度的横向间隔的第一周期性。 多行中的每一行都沿着第二维与相邻行分开第二平均空间间隔，从而导致沿着第二维度的横向间隔的第二周期性。 N维阵列响应于入射到N维阵列上的电磁辐射，表现出一组特征电磁干扰特性。

    Ultra-violet light sensing device and manufacturing method thereof
    79.
    发明授权
    Ultra-violet light sensing device and manufacturing method thereof 有权
    紫外光检测装置及其制造方法

    公开(公告)号：US08912619B2

    公开(公告)日：2014-12-16

    申请号：US13907437

    申请日：2013-05-31

    申请人： Han-Chi Liu ,  Huan-Kun Pan ,  Eiichi Okamoto

    发明人： Han-Chi Liu ,  Huan-Kun Pan ,  Eiichi Okamoto

    IPC分类号： H01L33/00 ,  H01L21/00 ,  H01L31/0248

    CPC分类号： H01L31/0248 ,  H01L31/03529 ,  H01L31/103 ,  Y02E10/50

    摘要： The present invention provides an ultra-violet light sensing device. The ultra-violet light sensing device includes a first conductivity type substrate, a second conductivity type region, and a first conductivity type high density region. The first conductivity type substrate includes a light incident surface. The second conductivity type region is disposed in the first conductivity type substrate and adjacent to the light incident surface. The first conductivity type high density region is disposed under the second conductivity type region. The present invention also provides another ultra-violet light sensing device, which further includes a first conductivity type high density shallow region which is sandwiched between the light incident surface and the second conductivity type region. Manufacturing methods for these ultra-violet light sensing devices are also disclosed in the present invention.

    摘要翻译： 本发明提供一种紫外线感测装置。 紫外线感测装置包括第一导电型基板，第二导电型区域和第一导电型高密度区域。 第一导电型基板包括光入射面。 第二导电类型区域设置在第一导电类型基板中并与光入射表面相邻。 第一导电型高密度区域设置在第二导电类型区域的下方。 本发明还提供另一种紫外线感测装置，其还包括夹在光入射表面和第二导电类型区域之间的第一导电类型的高密度浅区域。 本发明还公开了这些紫外线感测装置的制造方法。