公开(公告)号：US10410865B2

公开(公告)日：2019-09-10

申请号：US16128962

申请日：2018-09-12

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Benjamin Schmiege ,  Jeffrey W. Anthis ,  Abhijit Basu Mallick ,  Susmit Singha Roy ,  Ziqing Duan ,  Yihong Chen ,  Kelvin Chan ,  Srinivas Gandikota

IPC: H01L21/00 ,  H01L21/033 ,  C23F1/00 ,  H01L21/3213 ,  H01L21/321 ,  H01L21/768

Abstract: Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create a self-aligned via.

公开(公告)号：US20190256467A1

公开(公告)日：2019-08-22

申请号：US16400269

申请日：2019-05-01

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  David Thompson

IPC: C07D213/38 ,  C07F7/00 ,  C07D207/335 ,  C07F1/00 ,  C07C211/13 ,  C07C211/54 ,  C23C16/18 ,  C07F15/00 ,  C07F1/08 ,  C07F5/02 ,  C07F5/06 ,  C07F7/28 ,  C07F9/00 ,  C07F11/00 ,  C07F13/00 ,  C23C16/455 ,  C07D213/36 ,  C23C16/50

Abstract: Methods for deposition of elemental metal films on surfaces using metal coordination complexes comprising nitrogen-containing ligands are provided. Also provided are nitrogen-containing ligands useful in the methods of the invention and metal coordination complexes comprising these ligands.

公开(公告)号：US10366878B2

公开(公告)日：2019-07-30

申请号：US15587997

申请日：2017-05-05

Applicant: Applied Materials, Inc.

Inventor： Jessica Sevanne Kachian ,  Tobin Kaufman-Osborn ,  David Thompson

IPC: H01L21/02 ,  C23C16/56 ,  C23C16/455 ,  C23C16/40 ,  C23C16/04 ,  C23C16/02 ,  H01L21/3105 ,  H01L21/768

Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include net chemisorption of a self-assembled monolayer on the second surface to prevent deposition of the film on the second surface.

公开(公告)号：US10170321B2

公开(公告)日：2019-01-01

申请号：US15462214

申请日：2017-03-17

Applicant: Applied Materials, Inc.

Inventor： Wenyu Zhang ,  Wei V. Tang ,  Yixiong Yang ,  Chen-Han Lin ,  Yi Xu ,  Yu Lei ,  Naomi Yoshida ,  Lin Dong ,  Drew Phillips ,  Srividya Natarajan ,  Atashi Basu ,  Kaliappan Muthukumar ,  David Thompson ,  Paul F. Ma

IPC: H01L21/285 ,  C23C14/14 ,  C23C12/00 ,  H01L29/66 ,  H01L29/45 ,  H01L21/28 ,  H01L29/49

Abstract: Described are methods of depositing a titanium aluminum nitride film on a substrate surface with a controlled amount of carbon. The methods include exposing a substrate surface to a titanium precursor, a nitrogen reactant and an aluminum precursor with purges of the unreacted titanium and aluminum precursors and unreacted nitrogen reactants between each exposure.

公开(公告)号：US10121671B2

公开(公告)日：2018-11-06

申请号：US15234448

申请日：2016-08-11

Applicant: Applied Materials, Inc.

Inventor： Xinyu Fu ,  David Knapp ,  David Thompson ,  Jeffrey W. Anthis ,  Mei Chang

IPC: H01L21/44 ,  H01L21/285 ,  C23C16/08 ,  C23C16/455 ,  C23C16/06 ,  H01L29/786

Abstract: Processing methods comprising exposing a substrate to an optional nucleation promoter followed by sequential exposure of a first reactive gas comprising a metal oxyhalide compound and a second reactive gas to form a metal film on the substrate.

公开(公告)号：US20180291052A1

公开(公告)日：2018-10-11

申请号：US15947695

申请日：2018-04-06

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  Atashi Basu ,  David Thompson ,  Nasrin Kazem

IPC: C07F15/06 ,  C23C16/18

CPC classification number: C07F15/065 ,  C23C16/18 ,  C23C16/45553

Abstract: Metal coordination complexes comprising at least one diazabutadiene based ligand having a structure represented by: where R1 and R4 are selected from the group consisting of C4-C10 alkyl groups; and R2 and R3 are each independently selected from the group consisting of H, C1-C6 alkyl, cycloalkyl, or aryl groups and the difference in the number of carbons in R2 and R3 is greater than or equal to 2. Processing methods using the metal coordination complexes are also described.

公开(公告)号：US20180195167A1

公开(公告)日：2018-07-12

申请号：US15863203

申请日：2018-01-05

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Feng F. Chen ,  Jeffrey W. Anthis ,  David Thompson ,  Mei Chang

IPC: C23C16/06 ,  C23C16/455

CPC classification number: C23C16/06 ,  C23C16/18 ,  C23C16/45527 ,  C23C16/45553 ,  H01L21/28556 ,  H01L21/32051 ,  H01L21/76838

Abstract: Processing methods comprising exposing a substrate to a first reactive gas comprising an ethylcyclopentadienyl ruthenium complex or a cyclohexadienyl ruthenium complex and a second reactive gas comprising water to form a ruthenium film are described.

公开(公告)号：US20180187304A1

公开(公告)日：2018-07-05

申请号：US15909352

申请日：2018-03-01

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Mei Chang ,  David Thompson

IPC: C23C16/18 ,  C23C16/455 ,  C23C16/02 ,  C23C16/04 ,  C23C16/458

Abstract: Methods of depositing a metal selectively onto a metal surface relative to a dielectric surface are described. Methods include reducing a metal oxide surface to a metal surface and protecting a dielectric surface to minimize deposition thereon and exposing the substrate to a metal precursor and an alcohol to deposit a film.

公开(公告)号：US20180148466A1

公开(公告)日：2018-05-31

申请号：US15823755

申请日：2017-11-28

Applicant: Applied Materials, Inc.

Inventor： Benjamin Schmiege ,  Jeffrey W. Anthis ,  David Thompson

IPC: C07F15/04 ,  C07F15/02

CPC classification number: C07F15/045 ,  C07F5/00 ,  C07F15/025 ,  C07F15/06

Abstract: Metal coordination complexes comprising a metal atom coordinated to at least one aza-allyl ligand having the structure represented by: where each R1-R4 are independently selected from the group consisting of H, branched or unbranched C1-C6 alkyl, branched or unbranched C1-C6 alkenyl, branched or unbranched C1-C6 alkynyl, cycloalkyl groups having in the range of 1 to 6 carbon atoms, silyl groups and halogens. Methods of depositing a film using the metal coordination complex and a suitable reactant are also described.

公开(公告)号：US09914995B2

公开(公告)日：2018-03-13

申请号：US14920001

申请日：2015-10-22

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Mei Chang ,  David Thompson

IPC: C23C16/18 ,  C23C16/02 ,  C23C16/455 ,  C23C16/04 ,  C23C16/458

CPC classification number: C23C16/18 ,  C23C16/0281 ,  C23C16/04 ,  C23C16/45534 ,  C23C16/45551 ,  C23C16/45553 ,  C23C16/4583 ,  H01L21/28562 ,  H01L21/76826 ,  H01L21/76849 ,  H01L21/76883

Abstract: Methods of depositing a metal selectively onto a metal surface relative to a dielectric surface are described. Methods include reducing a metal oxide surface to a metal surface and protecting a dielectric surface to minimize deposition thereon and exposing the substrate to a metal precursor and an alcohol to deposit a film.