公开(公告)号：US06273794B1

公开(公告)日：2001-08-14

申请号：US09642182

申请日：2000-08-17

申请人： James V. Tietz ,  John M. White

发明人： James V. Tietz ,  John M. White

IPC分类号： B24B100

CPC分类号： B24B37/30 ,  B24B7/228 ,  B24B41/06

摘要： A semiconductor wafer fabrication apparatus includes a carrier head for holding a wafer and distributing a downward pressure across a back surface of the wafer. The apparatus also includes a wafer processing station disposed near the carrier head. The station includes a grinding wheel and a flat fluid bearing. The fluid bearing provides an upward pressure against a front surface of the wafer to substantially flatten the front surface of the wafer and conform it to the flatness of the bearing surface. The face of the wafer can move with very little friction across the bearing surface. The grinding wheel can be raised into contact with the front surface of the wafer and rotated to grind the front surface while the fluid bearing provides the upward pressure and the carrier head distributes the downward pressure. The technique can be used to planarize a wafer having one or more previously-formed layers despite variations in thickness of the wafer or warpage of the wafer.

摘要翻译： 半导体晶片制造装置包括用于保持晶片并且在晶片的后表面上分布向下的压力的载体头。 该设备还包括设置在承载头附近的晶片处理站。 该车站包括砂轮和扁平流体轴承。 流体轴承提供抵靠晶片前表面的向上压力，以使晶片的前表面基本平坦化，并使其符合轴承表面的平坦度。 晶片的表面可以以非常小的摩擦力在轴承表面上移动。 砂轮可以升高成与晶片的前表面接触并且旋转以研磨前表面，同时流体轴承提供向上的压力并且承载头分配向下的压力。 该技术可以用于平面化具有一个或多个预先形成的层的晶片，尽管晶片厚度的变化或晶片翘曲。

公开(公告)号：US5844205A

公开(公告)日：1998-12-01

申请号：US635270

申请日：1996-04-19

申请人： John M. White ,  Larry Chang

发明人： John M. White ,  Larry Chang

IPC分类号： H01L21/683 ,  C23C16/458 ,  C23C16/46 ,  C30B25/10 ,  C30B25/12 ,  H01L21/00 ,  H01L21/205 ,  H01L21/687 ,  F27B5/14 ,  F28F7/00

CPC分类号： H01L21/67103 ,  C23C16/4586 ,  C23C16/46 ,  C30B25/10 ,  C30B25/12

摘要： A heated substrate support plate for use in a process chamber. The support plate has grooves disposed therein for receiving heating elements. The heating elements are comprised of an outer sheath, a heater coil and a heat-conducting filler material. The heating element is disposed within a groove and compressed to compact the heat-conducting filler material about the heater coil.

摘要翻译： 用于处理室的加热衬底支撑板。 支撑板具有设置在其中用于接收加热元件的槽。 加热元件由外护套，加热器线圈和导热填充材料构成。 加热元件设置在凹槽内并被压缩以压缩围绕加热器线圈的导热填充材料。

公开(公告)号：US5773100A

公开(公告)日：1998-06-30

申请号：US746178

申请日：1996-11-06

申请人： Mei Chang ,  David N. K. Wang ,  John M. White ,  Dan Maydan

发明人： Mei Chang ,  David N. K. Wang ,  John M. White ,  Dan Maydan

IPC分类号： C23C16/50 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  B05D3/06

CPC分类号： C23C16/45565 ,  C23C16/345 ,  C23C16/455 ,  C23C16/5096

摘要： An inlet gas manifold for a vacuum deposition chamber incorporates inlet apertures which increase in diameter or cross-section transverse to the direction of gas flow. The aperture configuration increases the dissociation gases such as nitrogen and, thus increases the rate of silicon nitride deposition provided by nitrogen gas chemistry, without requiring the use of reactants such as ammonia. While one could use ammonia in the deposition gas chemistry if desired, the process provides the option of completely eliminating ammonia. The inlet manifold containing the increasing-diameter gas inlet holes provides enhanced control of the process and the deposited film.

摘要翻译： 用于真空沉积室的入口气体歧管包括入口孔，其直径或横截面横向于气体流动方向增加。 孔径构造增加了解离气体如氮气，从而增加了由氮气化学提供的氮化硅沉积速率，而不需要使用诸如氨的反应物。 虽然如果需要，可以在沉积气体化学中使用氨，该方法提供完全消除氨的选择。 包含增加直径的气体入口孔的入口歧管提供对过程和沉积膜的增强的控制。

公开(公告)号：USD350472S

公开(公告)日：1994-09-13

申请号：US7208

申请日：1993-03-25

申请人： John M. White ,  Govelio R. Gonzalez ,  You Ding

设计人： John M. White ,  Govelio R. Gonzalez ,  You Ding

公开(公告)号：US08877553B2

公开(公告)日：2014-11-04

申请号：US13195592

申请日：2011-08-01

申请人： John M. White ,  Shinichi Kurita ,  Takayuki Matsumoto

发明人： John M. White ,  Shinichi Kurita ,  Takayuki Matsumoto

IPC分类号： H01L21/00 ,  F16K51/02

CPC分类号： F16K51/02 ,  Y10S438/905 ,  Y10T29/49412

摘要： The present invention generally comprises a floating slit valve for interfacing with a chamber. A floating slit valve moves or “floats” relative to another object such as a chamber. The slit valve may be coupled between two chambers. When a chamber coupled with the slit valve is heated, the slit valve may also be heated by conduction. As the slit valve is heated, it may thermally expand. When a vacuum is drawn in a chamber, the slit valve may deform due to vacuum deflection. By disposing a low friction material spacer between the chamber and the slit valve, the slit valve may not rub against the chamber during thermal expansion/contraction and/or vacuum deflection and thus, may not generate undesirable particle contaminants. Additionally, slots drilled through the chamber for coupling the slit valve to the chamber may be sized to accommodate thermal expansion/contraction and vacuum deflection of the slit valve.

摘要翻译： 本发明通常包括用于与室连接的浮动狭缝阀。 浮动狭缝阀相对于诸如室的另一物体移动或“浮动”。 狭缝阀可以联接在两个腔室之间。 当与狭缝阀联接的室被加热时，狭缝阀也可以通过传导加热。 当狭缝阀被加热时，它可以热膨胀。 当在室中抽真空时，狭缝阀可能由于真空偏转而变形。 通过在室和狭缝阀之间设置低摩擦材料间隔件，狭缝阀在热膨胀/收缩和/或真空偏转期间可能不会摩擦室，因此不会产生不期望的颗粒污染物。 此外，穿过腔室钻出的狭缝阀可以被定尺寸以适应狭缝阀的热膨胀/收缩和真空偏转。

公开(公告)号：US08574411B2

公开(公告)日：2013-11-05

申请号：US13270058

申请日：2011-10-10

申请人： John M. White ,  Yan Ye ,  Akihiro Hosokawa

发明人： John M. White ,  Yan Ye ,  Akihiro Hosokawa

IPC分类号： C25B9/00 ,  C25B11/00 ,  C25B13/00 ,  C23C14/00 ,  C23C16/00 ,  C23C16/50

CPC分类号： C23C14/0063 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/34

摘要： A sputtering apparatus for processing large area substrates is provided. By introducing gas across the entire target surface, a uniform composition film may be formed on the substrate. When the gas is introduced merely at the perimeter, the gas distribution is not uniform. By providing a gas introduction tube across the processing area, the reactive gas will uniformly distribute to the whole target. Also, providing the gas tube with multiple inner tubes provides a quick, effective gas dispersion capability.

摘要翻译： 提供了一种用于处理大面积基板的溅射装置。 通过在整个靶表面上引入气体，可以在衬底上形成均匀的组成膜。 当气体仅在周边引入时，气体分布不均匀。 通过在处理区域内设置气体导入管，反应气体将均匀地分布到整个靶材上。 此外，为气体管提供多个内管提供了快速有效的气体分散能力。

公开(公告)号：US08377209B2

公开(公告)日：2013-02-19

申请号：US12370389

申请日：2009-02-12

申请人： John M. White

发明人： John M. White

IPC分类号： C23C16/00

CPC分类号： C23C16/545 ,  H01J37/32009 ,  H01J37/3277

摘要： The present invention generally relates to a method and apparatus for depositing a layer onto a substrate as the substrate is moving through the processing chamber. The substrate may move along a roll to roll system. A roll to roll system is a system where a substrate may be unwound from a first roll so that the substrate may undergo processing and then re-wound onto a second roll after the processing. As the substrate moves through the processing chamber, a plasma source may produce a plasma. An electrical bias applied to the substrate may draw the plasma to the substrate and hence, permit deposition of material onto the substrate as the substrate moves through the chamber.

摘要翻译： 本发明一般涉及当衬底移动通过处理室时将层沉积到衬底上的方法和装置。 衬底可以沿着辊到辊系统移动。 卷对卷系统是其中可以从第一辊展开衬底的系统，使得衬底可以经过处理，然后在处理之后再次缠绕到第二辊上。 当衬底移动通过处理室时，等离子体源可产生等离子体。 施加到衬底的电偏压可以将等离子体吸引到衬底，并且因此当衬底移动通过腔室时，允许材料沉积到衬底上。

公开(公告)号：US08328939B2

公开(公告)日：2012-12-11

申请号：US11780478

申请日：2007-07-20

申请人： Soo Young Choi ,  John M. White

发明人： Soo Young Choi ,  John M. White

IPC分类号： C23C16/00 ,  C23C16/455 ,  C23C16/50 ,  C23C16/507 ,  H01L21/3065

CPC分类号： C23C16/345 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32596

摘要： The present invention generally comprises a diffuser plate for a PECVD chamber. The diffuser plate comprises a plurality of hollow cathode cavities. The edge of the diffuser plate that will reside closest to a slit valve within a processing chamber may have the shape and/or size of the hollow cathode cavities adjusted to compensate for the proximity to the slit valve. By adjusting the shape and/or size of the hollow cathode cavities closest to the slit valve, the diffuser plate may permit a uniform plasma distribution across the processing chamber and thus, a uniform film thickness upon a substrate during a PECVD process.

摘要翻译： 本发明通常包括用于PECVD室的扩散板。 扩散板包括多个空心阴极腔。 最靠近处理室内的狭缝阀的扩散器板的边缘可以具有被调整以补偿与狭缝阀接近的空心阴极腔的形状和/或尺寸。 通过调节最接近狭缝阀的中空阴极腔的形状和/或尺寸，扩散板可以允许跨过处理室的均匀的等离子体分布，从而在PECVD工艺期间在衬底上具有均匀的膜厚度。

公开(公告)号：US08225496B2

公开(公告)日：2012-07-24

申请号：US12202199

申请日：2008-08-29

申请人： Robert Z. Bachrach ,  Yong-Kee Chae ,  Soo Young Choi ,  Nicholas G. J. De Vries ,  Yacov Elgar ,  Eric A. Englhardt ,  Michel R. Frei ,  Charles Gay ,  Parris Hawkins ,  Choi (Gene) Ho ,  James Craig Hunter ,  Penchala N. Kankanala ,  Liwei Li ,  Wing Hoo (Hendrick) Lo ,  Danny Cam Toan Lu ,  Fang Mei ,  Stephen P. Murphy ,  Srujal (Steve) Patel ,  Matthew J. B. Saunders ,  Asaf Schlezinger ,  Shuran Sheng ,  Tzay-Fa (Jeff) Su ,  Jeffrey S. Sullivan ,  David Tanner ,  Teresa Trowbridge ,  Brice Walker ,  John M. White ,  Tae K. Won

发明人： Robert Z. Bachrach ,  Yong-Kee Chae ,  Soo Young Choi ,  Nicholas G. J. De Vries ,  Yacov Elgar ,  Eric A. Englhardt ,  Michel R. Frei ,  Charles Gay ,  Parris Hawkins ,  Choi (Gene) Ho ,  James Craig Hunter ,  Penchala N. Kankanala ,  Liwei Li ,  Wing Hoo (Hendrick) Lo ,  Danny Cam Toan Lu ,  Fang Mei ,  Stephen P. Murphy ,  Srujal (Steve) Patel ,  Matthew J. B. Saunders ,  Asaf Schlezinger ,  Shuran Sheng ,  Tzay-Fa (Jeff) Su ,  Jeffrey S. Sullivan ,  David Tanner ,  Teresa Trowbridge ,  Brice Walker ,  John M. White ,  Tae K. Won

IPC分类号： H01L51/44 ,  H01L51/48 ,  H01L21/768 ,  H01L31/072

CPC分类号： H01L21/67236 ,  B23K26/364 ,  B26F3/002 ,  B26F3/004 ,  B65G49/064 ,  B65G2249/02 ,  B65G2249/04 ,  C03B33/03 ,  C03B33/033 ,  H01L21/67132 ,  H01L21/67712 ,  H01L21/67715 ,  H01L21/67721 ,  H01L21/67727 ,  H01L21/6776 ,  H01L31/022425 ,  H01L31/03921 ,  H01L31/0504 ,  H01L31/075 ,  H02S50/00 ,  H02S50/10 ,  Y02E10/548 ,  Y02P40/57 ,  Y10T29/49002 ,  Y10T29/49355 ,  Y10T29/5196 ,  Y10T29/53113 ,  Y10T29/5313 ,  Y10T29/5317 ,  Y10T29/53187 ,  Y10T29/53365 ,  Y10T29/53417 ,  Y10T225/10 ,  Y10T225/325 ,  Y10T225/329

摘要： The present invention generally relates to a system that can be used to form a photovoltaic device, or solar cell, using processing modules that are adapted to perform one or more steps in the solar cell formation process. The automated solar cell fab is generally an arrangement of automated processing modules and automation equipment that is used to form solar cell devices. The automated solar fab will thus generally comprise a substrate receiving module that is adapted to receive a substrate, one or more absorbing layer deposition cluster tools having at least one processing chamber that is adapted to deposit a silicon-containing layer on a surface of the substrate, one or more back contact deposition chambers, one or more material removal chambers, a solar cell encapsulation device, an autoclave module, an automated junction box attaching module, and one or more quality assurance modules that are adapted to test and qualify the completely formed solar cell device.

摘要翻译： 本发明一般涉及一种可用于形成光伏器件或太阳能电池的系统，该系统使用适于在太阳能电池形成过程中执行一个或多个步骤的处理模块。 自动化太阳能电池制造厂通常是用于形成太阳能电池器件的自动化处理模块和自动化设备的布置。 因此，自动化太阳能工厂将通常包括适于接收衬底的衬底接收模块，一个或多个吸收层沉积簇工具，其具有至少一个适于在衬底的表面上沉积含硅层的处理室 ，一个或多个背接触沉积室，一个或多个材料去除室，太阳能电池封装装置，高压釜模块，自动接线盒附接模块和一个或多个质量保证模块，其适于测试和限定完全形成 太阳能电池装置。

公开(公告)号：US08206075B2

公开(公告)日：2012-06-26

申请号：US11145018

申请日：2005-06-02

申请人： John M. White ,  Shinichi Kurita ,  William N. Sterling ,  Yoshiaki Tanase

发明人： John M. White ,  Shinichi Kurita ,  William N. Sterling ,  Yoshiaki Tanase

IPC分类号： H01L21/67 ,  C23C16/00

CPC分类号： H01L21/67126 ,  H01L21/67201

摘要： In certain aspects, a load lock chamber is provided that includes a body having at least one sealing surface wall including a sealing surface. The sealing surface wall has an opening adjacent the sealing surface adapted to input or output a substrate. The body further includes a plurality of side walls. The load lock chamber also includes a top coupled to the body. The top includes one or more openings that divide the top into a first portion and a second portion. The load lock chamber further includes one or more top sealing members adapted to cover each opening of the top. Each top sealing member absorbs a movement of the first portion of the top relative to the second portion of the top. Numerous other aspects are provided.

摘要翻译： 在某些方面，提供了一种装载锁定室，其包括具有包括密封表面的至少一个密封表面壁的主体。 密封表面壁具有邻近密封表面的开口，适于输入或输出基底。 身体还包括多个侧壁。 负载锁定室还包括联接到主体的顶部。 顶部包括将顶部分成第一部分和第二部分的一个或多个开口。 负载锁定室还包括适于覆盖顶部的每个开口的一个或多个顶部密封构件。 每个顶部密封构件吸收顶部相对于顶部的第二部分的第一部分的运动。 提供了许多其他方面。