公开(公告)号：US08349401B2

公开(公告)日：2013-01-08

申请号：US12684283

申请日：2010-01-08

申请人： Jun Sato ,  Kiyotaka Kikuchi ,  Hiroki Murakami ,  Shigeru Nakajima ,  Kazuhide Hasebe

发明人： Jun Sato ,  Kiyotaka Kikuchi ,  Hiroki Murakami ,  Shigeru Nakajima ,  Kazuhide Hasebe

IPC分类号： B05D7/22 ,  C23C16/00

CPC分类号： C23C16/4405

摘要： A method for using a film formation apparatus includes performing a main cleaning process and a post cleaning process in this order inside a reaction chamber. The main cleaning process is arranged to supply a cleaning gas containing fluorine into the reaction chamber while exhausting gas from inside the reaction chamber, thereby etching a film formation by-product containing silicon. The post cleaning process is arranged to remove a silicon-containing fluoride generated by the main cleaning process and remaining inside the reaction chamber and to alternately repeat, a plurality of times, supplying an oxidizing gas into the reaction chamber to transform the silicon-containing fluoride into an intermediate product by oxidization, and supplying hydrogen fluoride gas into the reaction chamber while exhausting gas from inside the reaction chamber to remove the intermediate product by a reaction between the hydrogen fluoride gas and the intermediate product.

摘要翻译： 使用成膜装置的方法包括在反应室内依次进行主清洗处理和后清洗处理。 主要的清洗过程是在从反应室内部排出气体的同时，向反应室内供给含有氟的清洗气体，从而蚀刻含有硅的成膜副产物。 后清洗处理被设置为除去由主要清洗过程产生的含氟氟化物，并保留在反应室内，并交替重复多次，将氧化气体供应到反应室中以将含硅氟化物 通过氧化进入中间产物，并且在从反应室内排出气体的同时将氟化氢气体供应到反应室中，以通过氟化氢气体和中间产物之间的反应除去中间产物。

公开(公告)号：US20120267340A1

公开(公告)日：2012-10-25

申请号：US13420723

申请日：2012-03-15

申请人： Akinobu KAKIMOTO ,  Satoshi Takagi ,  Toshiyuki Ikeuchi ,  Katsuhiko Komori ,  Kazuhide Hasebe

发明人： Akinobu KAKIMOTO ,  Satoshi Takagi ,  Toshiyuki Ikeuchi ,  Katsuhiko Komori ,  Kazuhide Hasebe

IPC分类号： B44C1/22 ,  B05C11/00

CPC分类号： H01L21/02164 ,  C23C16/045 ,  C23C16/45546 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32779 ,  H01L21/02337 ,  H01L21/31116 ,  H01L21/67109

摘要： A disclosed film deposition method includes steps of loading plural substrates each of which includes a pattern including a concave part in a reaction chamber in the form of shelves; depositing a silicon oxide film on the plural substrates by supplying a silicon-containing gas and an oxygen-containing gas to the reaction chamber; etching the silicon oxide film deposited on the plural substrates in the step of depositing by supplying a fluorine-containing gas and an ammonia gas to the reaction chamber; and alternately repeating the step of depositing and the step of etching.

摘要翻译： 所公开的膜沉积方法包括加载多个基板的步骤，每个基板在支架的形式的反应室中包括包括凹部的图案; 通过向所述反应室供给含硅气体和含氧气体，在所述多个基板上沉积氧化硅膜; 在通过向反应室供给含氟气体和氨气的沉积步骤中蚀刻沉积在多个基板上的氧化硅膜; 并且交替地重复沉积步骤和蚀刻步骤。

公开(公告)号：US08257789B2

公开(公告)日：2012-09-04

申请号：US12564484

申请日：2009-09-22

申请人： Masanobu Matsunaga ,  Nobutake Nodera ,  Kazuhide Hasebe

发明人： Masanobu Matsunaga ,  Nobutake Nodera ,  Kazuhide Hasebe

IPC分类号： C23C16/00 ,  C23C16/453

CPC分类号： C23C16/345 ,  C23C16/455 ,  C23C16/45542 ,  C23C16/45546 ,  H01L21/3141 ,  H01L21/3185

摘要： A film formation method, in a vertical batch CVD apparatus, is preset to repeat a cycle a plurality of times to laminate thin films formed by respective times. The cycle alternately includes an adsorption step of adsorbing a source gas onto a surface of the target substrates and a reaction step of causing a reactive gas to react with the adsorbed source gas. The adsorption step is arranged to make a plurality of times a supply sub-step of performing supply of the source gas to the process field with an intermediate sub-step of stopping supply of the source gas to the process field interposed therebetween, while maintaining a shut-off state of supply of the reactive gas. The reaction step is arranged to continuously perform supply of the reactive gas to the process field, while maintaining a shut-off state of supply of the source gas.

摘要翻译： 在垂直分批CVD装置中，成膜方法被预先设定为重复多次循环以层压各时间形成的薄膜。 循环交替地包括将源气体吸附到目标基板的表面上的吸附步骤和使反应性气体与吸附的源气体反应的反应步骤。 吸附工序被配置为进行多次供给副工序，该供给副工序用于停止将源气体供给到工艺场的中间子步骤，同时保持原料气体 关闭反应气体供应状态。 反应步骤被设置成在保持源气体的供应关闭状态的同时连续地向工艺场供应反应气体。

公开(公告)号：US07906168B2

公开(公告)日：2011-03-15

申请号：US11902782

申请日：2007-09-25

申请人： Kazuhide Hasebe ,  Yoshihiro Ishida ,  Takehiko Fujita ,  Jun Ogawa ,  Shigeru Nakajima

发明人： Kazuhide Hasebe ,  Yoshihiro Ishida ,  Takehiko Fujita ,  Jun Ogawa ,  Shigeru Nakajima

IPC分类号： B05D5/12

CPC分类号： C23C16/509 ,  C23C16/402 ,  C23C16/45542 ,  C23C16/45546 ,  H01J37/3244 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/0228

摘要： An oxide film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas including a silicon source gas and a second process gas including an oxidizing gas. The oxide film is formed by performing cycles each alternately including first and second steps. The first step performs supply of the first process gas, thereby forming an adsorption layer containing silicon on a surface of the target substrate. The second performs supply of the second process gas, thereby oxidizing the adsorption layer on the surface of the target substrate. The silicon source gas is a univalent or bivalent aminosilane gas, and each of the cycles is arranged to use a process temperature lower than that used for a trivalent aminosilane gas.

摘要翻译： 在选择性地供给包括硅源气体的第一工艺气体和包括氧化气体的第二工艺气体的工艺领域中，通过CVD在目标衬底上形成氧化物膜。 氧化膜是通过循环执行而形成的，每个循环包括第一和第二步骤。 第一步进行第一处理气体的供给，由此在目标基板的表面形成含有硅的吸附层。 第二工序气体供给第二工序气体，从而氧化目标衬底表面上的吸附层。 硅源气体是一价或二价氨基硅烷气体，并且每个循环被设置为使用低于用于三价氨基硅烷气体的工艺温度的工艺温度。

公开(公告)号：US07795158B2

公开(公告)日：2010-09-14

申请号：US11892949

申请日：2007-08-28

申请人： Takehiko Fujita ,  Jun Ogawa ,  Shigeru Nakajima ,  Kazuhide Hasebe

发明人： Takehiko Fujita ,  Jun Ogawa ,  Shigeru Nakajima ,  Kazuhide Hasebe

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： C30B33/005 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/31662

摘要： In an oxidation method for a semiconductor process, target substrates are placed at intervals in a vertical direction within a process field of a process container. An oxidizing gas and a deoxidizing gas are supplied to the process field from one side of the process field while gas is exhausted from the other side. One or both of the oxidizing gas and the deoxidizing gas are activated. The oxidizing gas and the deoxidizing gas are caused to react with each other, thereby generating oxygen radicals and hydroxyl group radicals within the process field. An oxidation process is performed on the surfaces of the target substrate by use of the oxygen radicals and the hydroxyl group radicals.

摘要翻译： 在半导体工艺的氧化方法中，目标衬底在处理容器的工艺场内沿垂直方向间隔放置。 从处理场的一侧向工艺场供给氧化气体和脱氧气体，同时从另一侧排出气体。 一种或两种氧化气体和脱氧气体被激活。 使氧化气体和脱氧气体相互反应，从而在工艺场内产生氧自由基和羟基自由基。 通过氧自由基和羟基自由基在目标基材的表面进行氧化处理。

公开(公告)号：US07655574B2

公开(公告)日：2010-02-02

申请号：US11289330

申请日：2005-11-30

申请人： Takuya Sugawara ,  Yoshihide Tada ,  Genji Nakamura ,  Shigenori Ozaki ,  Toshio Nakanishi ,  Masaru Sasaki ,  Seiji Matsuyama ,  Kazuhide Hasebe ,  Shigeru Nakajima ,  Tomonori Fujiwara

发明人： Takuya Sugawara ,  Yoshihide Tada ,  Genji Nakamura ,  Shigenori Ozaki ,  Toshio Nakanishi ,  Masaru Sasaki ,  Seiji Matsuyama ,  Kazuhide Hasebe ,  Shigeru Nakajima ,  Tomonori Fujiwara

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02112 ,  H01L21/0234 ,  H01L21/28176 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/3144 ,  H01L21/31658 ,  H01L29/518 ,  H01L29/78

摘要： An insulting film is modified by subjecting the insulting film to a modification treatment comprising a combination of a plasma treatment and a thermal annealing treatment. There is provided a method of enhancing the characteristic of an insulating film by improving deterioration in the characteristic of the insulating film due to carbon, a suboxide, a dangling bond or the like contained in the insulating film.

摘要翻译： 通过对绝缘膜进行包括等离子体处理和热退火处理的组合的改性处理来修饰绝缘膜。 通过改善绝缘膜中所含的碳，低氧化物，悬挂键等导致的绝缘膜的特性劣化，提供了提高绝缘膜特性的方法。

公开(公告)号：US07648895B2

公开(公告)日：2010-01-19

申请号：US12341642

申请日：2008-12-22

申请人： Masaki Kurokawa ,  Katsuhiko Komori ,  Norifumi Kimura ,  Kazuhide Hasebe ,  Takehiko Fujita ,  Akitake Tamura ,  Yoshikazu Furusawa

发明人： Masaki Kurokawa ,  Katsuhiko Komori ,  Norifumi Kimura ,  Kazuhide Hasebe ,  Takehiko Fujita ,  Akitake Tamura ,  Yoshikazu Furusawa

IPC分类号： H01L21/00

CPC分类号： C23C16/22 ,  C23C16/45578

摘要： A vertical CVD apparatus is arranged to process a plurality of target substrates all together to form a silicon germanium film. The apparatus includes a reaction container having a process field configured to accommodate the target substrates, and a common supply system configured to supply a mixture gas into the process field. The mixture gas includes a first process gas of a silane family and a second process gas of a germane family. The common supply system includes a plurality of supply ports disposed at different heights.

摘要翻译： 布置垂直CVD装置以一起处理多个目标基板以形成硅锗膜。 该装置包括反应容器，其具有被配置为容纳目标基板的过程区域，以及配置成将混合气体供应到过程区域中的公共供应系统。 混合气体包括硅烷族的第一工艺气体和锗族的第二工艺气体。 共同供应系统包括设置在不同高度的多个供应口。

公开(公告)号：US07546840B2

公开(公告)日：2009-06-16

申请号：US10480488

申请日：2002-03-08

申请人： Kazuhide Hasebe ,  Daisuke Nozu ,  Dong-Kyun Choi

发明人： Kazuhide Hasebe ,  Daisuke Nozu ,  Dong-Kyun Choi

IPC分类号： B08B9/00 ,  B44C1/22

CPC分类号： B08B7/0035 ,  B08B7/00 ,  C23C14/086 ,  C23C14/3414 ,  C23C16/4404 ,  Y10S438/905 ,  Y10S438/906

摘要： After semiconductor wafers are loaded into a reaction vessel, and ruthenium (Ru) film or ruthenium oxide film is formed, the interior of the reaction vessel is efficiently cleaned without contaminating the wafers. The interior of the reaction vessel is heated to a temperature of above 850° C. while the pressure inside the reaction vessel is reduced to, e.g., 133 pa (1 Torr)-13.3 Kpa (100 Torr), and oxygen gas is fed into the reaction vessel at a flow rate of, e.g., above 1.5 Lm, whereby the ruthenium film or the ruthenium oxide film formed inside the reaction vessel is cleaned off. In place of oxygen gas, active oxygen, such as O3, O* and OH*, etc. may be used.

摘要翻译： 将半导体晶片装载到反应容器中后，形成钌（Ru）膜或氧化钌膜，能够有效地清洗反应容器的内部而不污染晶片。 将反应容器的内部加热到高于850℃的温度，同时将反应容器内的压力降低至例如133pa（1Torr）-13.3Kpa（100Torr），并将氧气送入 该反应容器的流速例如高于1.5Lm，由此清除反应容器内形成的钌膜或氧化钌膜。 可以使用氧，例如O 3，O *和OH *等活性氧代替氧气。

公开(公告)号：US20090124087A1

公开(公告)日：2009-05-14

申请号：US12285885

申请日：2008-10-15

申请人： Nobutake Nodera ,  Jun Sato ,  Masanobu Matsunaga ,  Kazuhide Hasebe ,  Hisashi Inoue

发明人： Nobutake Nodera ,  Jun Sato ,  Masanobu Matsunaga ,  Kazuhide Hasebe ,  Hisashi Inoue

IPC分类号： H01L21/3065 ,  H01L21/28 ,  C23C16/00 ,  C23F1/08

CPC分类号： C23C16/509 ,  C23C16/345 ,  C23C16/452 ,  C23C16/45542 ,  C23C16/45546 ,  H01J37/32091 ,  H01J37/32174

摘要： A vertical plasma processing apparatus for a semiconductor process for performing a plasma process on target substrates all together includes an exciting mechanism configured to turn at least part of a process gas into plasma. The exciting mechanism includes first and second electrodes provided to a plasma generation box and facing each other with a plasma generation area interposed therebetween, and an RF power supply configured to supply an RF power for plasma generation to the first and second electrodes and including first and second output terminals serving as grounded and non-grounded terminals, respectively. A switching mechanism is configured to switch between a first state where the first and second electrodes are connected to the first and second output terminals, respectively, and a second state where the first and second electrodes are connected to the second and first output terminals, respectively.

摘要翻译： 一种用于对目标衬底执行等离子体处理的半导体工艺的垂直等离子体处理装置一起包括一个激励机构，其构造成将至少部分工艺气体转化为等离子体。 励磁机构包括提供给等离子体发生箱并且彼此面对的等离子体产生区域的第一和第二电极以及被配置为向第一和第二电极提供用于等离子体产生的RF功率的RF电源，包括第一和第二电极 第二输出端分别用作接地端子和非接地端子。 开关机构被配置为分别在第一和第二电极分别连接到第一和第二输出端子的第一状态和第一和第二电极分别连接到第二和第二输出端子的第二状态 。

公开(公告)号：US20080107824A1

公开(公告)日：2008-05-08

申请号：US11896752

申请日：2007-09-05

申请人： Kazuhide Hasebe ,  Yoshihiro Ishida ,  Takehiko Fujita ,  Jun Ogawa ,  Shigeru Nakajima

发明人： Kazuhide Hasebe ,  Yoshihiro Ishida ,  Takehiko Fujita ,  Jun Ogawa ,  Shigeru Nakajima

IPC分类号： C23C16/513 ,  C23C16/40 ,  B05C11/00

CPC分类号： C23C16/45525 ,  C23C16/45527 ,  C23C16/45542 ,  C23C16/45544

摘要： An oxide film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas including a source gas containing a film source element and no amino group, a second process gas including an oxidizing gas, and a third process gas including a preliminary treatment gas. A first step includes an excitation period of supplying the third process gas excited by an exciting mechanism, thereby performing a preliminary treatment on the target substrate by preliminary treatment gas radicals. A second step performs supply of the first process gas, thereby adsorbing the film source element on the target substrate. A third step includes an excitation period of supplying the second process gas excited by an exciting mechanism, thereby oxidizing the film source element adsorbed on the target substrate by oxidizing gas radicals.

摘要翻译： 在目标基板上通过CVD形成氧化膜，在选择性地供给包括含有膜源元素而不含氨基的源气体的第一工艺气体的工艺领域中，包含氧化气体的第二工艺气体和 包括初步处理气体的第三工艺气体。 第一步骤包括供给由激励机构激励的第三处理气体的激发期，由此通过预处理气体基团对目标基板进行预处理。 第二步进行第一处理气体的供给，从而将膜源元件吸附在目标基板上。 第三步骤包括供给由激励机构激励的第二处理气体的激励周期，从而通过氧化气体基团氧化吸附在目标基板上的膜源元件。