公开(公告)号：US20140361839A1

公开(公告)日：2014-12-11

申请号：US14298872

申请日：2014-06-06

Applicant: RF Micro Devices, Inc.

Inventor： Baker Scott ,  George Maxim ,  Dirk Robert Walter Leipold ,  Christian Rye Iversen ,  Eric K. Bolton ,  Daniel Charles Kerr

IPC: H03F3/193

CPC classification number: H03H7/465 ,  H03F1/565 ,  H03F3/193 ,  H03F3/245 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/267 ,  H03F2200/451 ,  H03F2203/7209 ,  H03H7/0115 ,  H03H7/0153 ,  H03H7/09 ,  H03H7/1775 ,  H03H7/46 ,  H03H7/463 ,  H03H2210/012 ,  H03H2210/025 ,  H03H2210/04 ,  H04B1/1027 ,  H04B1/18

Abstract: An apparatus, which includes a first electronic device, a first nonlinear capacitance compensation circuit, and a capacitance compensation control circuit, is disclosed. The first electronic device has a first nonlinear capacitance and is coupled to the first nonlinear capacitance compensation circuit, which has a first compensation capacitance and receives a first compensation control signal. The capacitance compensation control circuit adjusts the first compensation capacitance using the first compensation control signal to at least partially linearize the first nonlinear capacitance.

Abstract translation: 公开了一种装置，其包括第一电子装置，第一非线性电容补偿电路和电容补偿控制电路。 第一电子设备具有第一非线性电容并且耦合到具有第一补偿电容并且接收第一补偿控制信号的第一非线性电容补偿电路。 电容补偿控制电路使用第一补偿控制信号来调整第一补偿电容，以使第一非线性电容至少部分线性化。

公开(公告)号：US20140266531A1

公开(公告)日：2014-09-18

申请号：US14215800

申请日：2014-03-17

Applicant: RF Micro Devices, Inc.

Inventor： Dirk Robert Walter Leipold ,  George Maxim ,  Baker Scott ,  Danny W. Chang

IPC: H01F27/38 ,  H01F27/28

CPC classification number: H03F1/3241 ,  H01F27/28 ,  H01F27/385 ,  H03F1/22 ,  H03F1/32 ,  H03F1/34 ,  H03F3/19 ,  H03F3/195 ,  H03F3/211 ,  H03F3/213 ,  H03H7/09 ,  H03H7/1775

Abstract: Radio frequency (RF) filters configured to filter undesired signal components (e.g., noise and harmonics) from RF signals are disclosed. In one embodiment, an RF filter includes a first inductor coil having a first winding and a second inductor coil having a second winding and a third winding. The second winding of the second inductor coil is configured to have a first mutual magnetic coupling with the first winding, while the third winding of the second inductor coil is configured to have a second mutual magnetic coupling with the first winding. The second winding is connected to the third winding such that the first mutual magnetic coupling and the second mutual magnetic coupling are in opposition. In this manner, the first inductor coil and the second inductor coil may be provided in a compact arrangement while providing weak mutual magnetic coupling between the first inductor coil and the second inductor coil.

Abstract translation: 公开了用于从RF信号滤波不期望的信号分量（例如，噪声和谐波）的射频（RF）滤波器。 在一个实施例中，RF滤波器包括具有第一绕组的第一电感线圈和具有第二绕组和第三绕组的第二电感线圈。 第二电感线圈的第二绕组被配置为具有与第一绕组的第一互耦合，而第二电感线圈的第三绕组被配置为具有与第一绕组的第二互耦合耦合。 第二绕组连接到第三绕组，使得第一互磁耦合和第二互磁耦合相对。 以这种方式，第一电感线圈和第二电感线圈可以以紧凑的布置提供，同时在第一电感线圈和第二电感线圈之间提供弱的互耦合。

公开(公告)号：US10121718B2

公开(公告)日：2018-11-06

申请号：US14885202

申请日：2015-10-16

Applicant: RF Micro Devices, Inc.

Inventor： Dirk Robert Walter Leipold ,  Julio C. Costa ,  Baker Scott ,  George Maxim

IPC: H01L23/29 ,  H01L23/31 ,  H01L21/304 ,  H01L21/02 ,  H01L21/683 ,  H01L23/373 ,  H01L23/00 ,  H05K1/02 ,  H05K1/18 ,  H01Q1/50 ,  H01L23/36 ,  H01L21/56 ,  H01L23/20 ,  H01L23/367 ,  H01L21/306 ,  H01L23/522 ,  H01L49/02

CPC classification number: H01L23/315 ,  H01L21/02266 ,  H01L21/02282 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/565 ,  H01L21/6835 ,  H01L23/20 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/36 ,  H01L23/367 ,  H01L23/3731 ,  H01L23/3737 ,  H01L23/5223 ,  H01L23/5227 ,  H01L23/5228 ,  H01L23/562 ,  H01L24/17 ,  H01L28/10 ,  H01L28/20 ,  H01L28/40 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/73204 ,  H01L2224/92125 ,  H01L2924/0002 ,  H01L2924/19011 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01Q1/50 ,  H05K1/0203 ,  H05K1/181 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/00014

Abstract: A printed circuit module having a protective layer in place of a low-resistivity handle layer and methods for manufacturing the same are disclosed. The printed circuit module includes a printed circuit substrate with a thinned die attached to the printed circuit substrate. The thinned die includes at least one device layer over the printed circuit substrate and at least one deep well within the at least one device layer. A protective layer is disposed over the at least one deep well, wherein the protective layer has a thermal conductivity greater than 2 watts per meter Kelvin (W/mK) and an electrical resistivity of greater than 106 Ohm-cm.

公开(公告)号：US09899289B2

公开(公告)日：2018-02-20

申请号：US14885202

申请日：2015-10-16

Applicant: RF Micro Devices, Inc.

Inventor： Dirk Robert Walter Leipold ,  Julio C. Costa ,  Baker Scott ,  George Maxim

IPC: H01L23/29 ,  H01L23/31 ,  H01L21/304 ,  H01L21/02 ,  H01L21/683 ,  H01L23/373 ,  H01L23/00 ,  H05K1/02 ,  H05K1/18 ,  H01Q1/50 ,  H01L23/36 ,  H01L21/56 ,  H01L23/20 ,  H01L23/367 ,  H01L21/306 ,  H01L23/522 ,  H01L49/02

CPC classification number: H01L23/315 ,  H01L21/02266 ,  H01L21/02282 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/565 ,  H01L21/6835 ,  H01L23/20 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/36 ,  H01L23/367 ,  H01L23/3731 ,  H01L23/3737 ,  H01L23/5223 ,  H01L23/5227 ,  H01L23/5228 ,  H01L23/562 ,  H01L24/17 ,  H01L28/10 ,  H01L28/20 ,  H01L28/40 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/73204 ,  H01L2224/92125 ,  H01L2924/0002 ,  H01L2924/19011 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01Q1/50 ,  H05K1/0203 ,  H05K1/181 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/00014

Abstract: A printed circuit module having a protective layer in place of a low-resistivity handle layer and methods for manufacturing the same are disclosed. The printed circuit module includes a printed circuit substrate with a thinned die attached to the printed circuit substrate. The thinned die includes at least one device layer over the printed circuit substrate and at least one deep well within the at least one device layer. A protective layer is disposed over the at least one deep well, wherein the protective layer has a thermal conductivity greater than 2 watts per meter Kelvin (W/mK) and an electrical resistivity of greater than 106 Ohm-cm.

公开(公告)号：US09780756B2

公开(公告)日：2017-10-03

申请号：US14449764

申请日：2014-08-01

Applicant: RF Micro Devices, Inc.

Inventor： George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

IPC: H03H7/09 ,  H03H7/01 ,  H03J5/24 ,  H03F1/56 ,  H03F3/193 ,  H03F3/24 ,  H03F3/68 ,  H03F3/72

CPC classification number: H03H7/0161 ,  H03F1/565 ,  H03F3/193 ,  H03F3/245 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/267 ,  H03F2200/391 ,  H03F2200/451 ,  H03F2203/7209 ,  H03H7/0153 ,  H03H7/09 ,  H03H7/1775 ,  H03H2210/012 ,  H03H2210/025 ,  H03H2210/04 ,  H03J5/242

Abstract: Embodiments of radio frequency (RF) front-end circuitry are disclosed where the RF front-end circuitry includes a tunable RF filter structure and a calibration circuit. The tunable RF filter structure includes (at least) a pair of weakly coupled resonators and defines a transfer function with a passband. The calibration circuit is configured to shape the passband so that the passband defines a center frequency. Additionally, the calibration circuit is configured to detect a phase difference at the target center frequency between the pair of weakly coupled resonators and adjust the phase difference of the pair of weakly coupled resonators at the target center frequency so as to reduce a frequency displacement between the center frequency of the passband and the target center frequency. In this manner, the calibration circuit calibrates the tunable RF filter structure to correct for errors in the center frequency of the passband due to component manufacturing variations.

公开(公告)号：US09761367B2

公开(公告)日：2017-09-12

申请号：US14927546

申请日：2015-10-30

Applicant: RF Micro Devices, Inc.

Inventor： Dirk Robert Walter Leipold ,  George Maxim ,  Baker Scott

IPC: H03H7/46 ,  H01F27/28 ,  H03H7/38 ,  H04B1/40 ,  H04J1/08

CPC classification number: H01F27/2804 ,  H01F2027/2809 ,  H03H7/38 ,  H03H7/463 ,  H04B1/40 ,  H04J1/08

Abstract: Multiplexing circuitry is disclosed that includes filtering circuitry, which provides a first transfer function between a common port and a first port and a second transfer function between the common port and a second port. The first transfer function and second transfer function provide a first passband and a second passband, respectively. The first transfer function also has a stopband provided within the second passband of the second transfer function due to the filtering circuitry including a first parallel resonant circuit provided in series in a first filter path being weakly coupled to a second parallel resonant provided in shunt with respect to a second filter path. The weak coupling between the first parallel resonant circuit and the second parallel resonant circuit thus naturally provides a stopband in the first transfer function within the second passband of the second transfer function.

公开(公告)号：US09755671B2

公开(公告)日：2017-09-05

申请号：US14450028

申请日：2014-08-01

Applicant: RF Micro Devices, Inc.

Inventor： George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

IPC: H03F3/24 ,  H03F3/19 ,  H04B1/16 ,  H04B1/04 ,  H03F1/56 ,  H03F3/193 ,  H03F3/68 ,  H03F3/72 ,  H03H7/09 ,  H03H7/01

CPC classification number: H04B1/0458 ,  H03F1/565 ,  H03F3/193 ,  H03F3/245 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/267 ,  H03F2200/391 ,  H03F2200/451 ,  H03F2203/7209 ,  H03H7/09 ,  H03H7/1775 ,  H03H2210/012 ,  H03H2210/025 ,  H03H2210/04

Abstract: Embodiments of radio frequency (RF) filter front-end circuitry are disclosed that include a tunable RF filter structure having weakly coupled resonators and a Voltage Standing Wave Ratio (VSWR) control circuit. The VSWR control circuit is configured to detect a VSWR at a terminal of the tunable RF filter structure and to dynamically tune the tunable RF filter structure based on the VSWR. In this manner, the VSWR control circuit tunes the tunable RF filter structure to improve performance of tunable RF filter structure over variations in the VSWR.

公开(公告)号：US09653772B2

公开(公告)日：2017-05-16

申请号：US14931621

申请日：2015-11-03

Applicant: RF Micro Devices, Inc.

Inventor： George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

IPC: H01L27/08 ,  H01P7/06 ,  H01L21/027 ,  H01L49/02 ,  H03H9/24 ,  H01P7/08

CPC classification number: H01F27/2804 ,  H01F2027/2809 ,  H01L21/0276 ,  H01L28/10 ,  H01P7/06 ,  H01P7/065 ,  H01P7/08 ,  H03H7/38 ,  H03H7/463 ,  H03H9/24 ,  H04B1/40 ,  H04J1/08

Abstract: A resonator includes a laminate, an inductive element on the laminate, and a semiconductor die attached to the inductive element and the laminate. The semiconductor die includes a substrate and a device layout area. The device layout area is separated into a number of device layout sub-areas, each of which has an area between about 1.0 μm2 and 100.0 μm2. By limiting the area of each one of the device layout sub-areas with the charge carrier trap trenches, the total area of the semiconductor die prone to inducement of eddy currents (i.e., the layer of accumulated charge at the interface of the substrate and the device layout area) is reduced, which in turn reduces interference with the magnetic field of the inductive element and thus improves the performance of the resonator.

公开(公告)号：US09647641B2

公开(公告)日：2017-05-09

申请号：US14450199

申请日：2014-08-01

Applicant: RF Micro Devices, inc.

Inventor： George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

IPC: H03J3/06 ,  H03H7/01 ,  H03H7/46 ,  H03F1/56 ,  H03F3/193 ,  H03F3/24 ,  H03F3/68 ,  H03F3/72 ,  H03H7/09 ,  H03J5/24 ,  H03H7/38

Abstract: RF communications circuitry, which includes a first tunable RF filter and a first RF low noise amplifier (LNA) is disclosed. The first tunable RF filter includes a pair of weakly coupled resonators, and receives and filters a first upstream RF signal to provide a first filtered RF signal. The first RF LNA is coupled to the first tunable RF filter, and receives and amplifies an RF input signal to provide an RF output signal.

公开(公告)号：US09614490B2

公开(公告)日：2017-04-04

申请号：US14298852

申请日：2014-06-06

Applicant: RF Micro Devices, Inc.

Inventor： George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

IPC: H03H7/01 ,  H03H7/46 ,  H03F3/193 ,  H04B1/10 ,  H03F1/56 ,  H03F3/24 ,  H03F3/68 ,  H03F3/72 ,  H04B1/18 ,  H03H7/09

CPC classification number: H03H7/465 ,  H03F1/565 ,  H03F3/193 ,  H03F3/245 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/267 ,  H03F2200/451 ,  H03F2203/7209 ,  H03H7/0115 ,  H03H7/0153 ,  H03H7/09 ,  H03H7/1775 ,  H03H7/46 ,  H03H7/463 ,  H03H2210/012 ,  H03H2210/025 ,  H03H2210/04 ,  H04B1/1027 ,  H04B1/18

Abstract: RF communications circuitry, which includes a first RF filter structure and control circuitry, is disclosed. The first RF filter structure includes a pair of weakly coupled resonators and a first tunable RF filter. The control circuitry provides a first filter control signal. The first tunable RF filter receives and filters an upstream RF signal to provide a first filtered RF signal, such that a center frequency of the first tunable RF filter is based on the first filter control signal.