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    Display device and controlling method thereof
    83.
    发明授权
    Display device and controlling method thereof 有权
    显示装置及其控制方法

    公开(公告)号：US09147698B2

    公开(公告)日：2015-09-29

    申请号：US14321874

    申请日：2014-07-02

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Keisuke Miyagawa ,  Jun Koyama

    IPC: H01L27/12 ,  G09G3/32

    CPC classification number: H01L27/124 ,  G09G3/3233 ,  G09G2300/0426 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/0251 ,  G09G2320/029 ,  G09G2320/0295 ,  G09G2320/043 ,  G09G2330/021 ,  G09G2330/028

    Abstract: A conventional setting voltage was a value with an estimated margin of a characteristic change of a light emitting element. Therefore, a voltage between the source and drain of a driver transistor Vds had to be set high (Vds≧Vgs−VTh+a). This caused high heat generation and power consumption because a voltage applied to the light emitting element. The invention is characterized by feedbacking a change in a current value in accordance with the deterioration of a light emitting element and a power source voltage controller which modifies a setting voltage. Namely, according to the invention, the setting voltage is to be set in the vicinity of the boundary (critical part) between a saturation region and a linear region, and a voltage margin for the deterioration is not required particularly for an initial setting voltage.

    Abstract translation: 传统的设定电压是具有发光元件的特性变化的估计裕量的值。 因此，必须将驱动晶体管Vds的源极和漏极之间的电压设置为高（Vds≥Vgs-VTh + a）。 这导致由于施加到发光元件的电压而导致高的发热和功率消耗。 本发明的特征在于根据改变设定电压的发光元件和电源电压控制器的劣化反馈电流值的变化。 也就是说，根据本发明，将设定电压设定在饱和区域和线性区域之间的边界（临界部分）附近，并且对初始设定电压不需要劣化的电压余量。

    Signal processing circuit and method for driving the same
    84.
    发明授权
    Signal processing circuit and method for driving the same 有权
    信号处理电路及其驱动方法

    公开(公告)号：US09147462B2

    公开(公告)日：2015-09-29

    申请号：US14088498

    申请日：2013-11-25

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Jun Koyama ,  Shunpei Yamazaki

    IPC: G11C11/24 ,  G11C11/4074 ,  G11C11/412 ,  G11C27/02 ,  H03K3/037 ,  H03K3/356 ,  H01L27/12

    CPC classification number: G11C11/4074 ,  G11C11/412 ,  G11C27/024 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1251 ,  H03K3/0375 ,  H03K3/356008

    Abstract: It is an object to provide a memory device for which a complex manufacturing process is not necessary and whose power consumption can be suppressed and a signal processing circuit including the memory device. In a memory element including a phase-inversion element by which the phase of an input signal is inverted and the signal is output such as an inverter or a clocked inverter, a capacitor which holds data and a switching element which controls storing and releasing of electric charge in the capacitor are provided. For the switching element, a transistor including an oxide semiconductor in a channel formation region is used. The memory element is applied to a memory device such as a register or a cache memory included in a signal processing circuit.

    Abstract translation: 本发明的目的是提供一种不需要复杂的制造过程并且可以抑制其功耗的存储器件，以及包括存储器件的信号处理电路。 在包括输入信号的相位被反相并且输出信号如反相器或时钟反相器的相位反转元件的存储元件中，保存数据的电容器和控制电存储和释放的开关元件 提供电容器中的电荷。 对于开关元件，使用在沟道形成区域中包括氧化物半导体的晶体管。 存储器元件被应用于包括在信号处理电路中的寄存器或高速缓冲存储器等存储器件。

    Semiconductor device
    87.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US09054201B2

    公开(公告)日：2015-06-09

    申请号：US13928425

    申请日：2013-06-27

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Kiyoshi Kato

    IPC: H01L29/78 ,  H01L29/786 ,  H01L21/84 ,  H01L27/108 ,  H01L27/11 ,  H01L27/115 ,  H01L27/118 ,  H01L27/12 ,  G11C16/04 ,  G11C16/26

    CPC classification number: H01L27/1255 ,  G11C16/0433 ,  G11C16/26 ,  H01L21/84 ,  H01L27/108 ,  H01L27/10805 ,  H01L27/10873 ,  H01L27/11 ,  H01L27/1108 ,  H01L27/11517 ,  H01L27/11521 ,  H01L27/1156 ,  H01L27/11803 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/7869

    Abstract: An object of the present invention is to provide a semiconductor device having a novel structure in which in a data storing time, stored data can be stored even when power is not supplied, and there is no limitation on the number of writing. A semiconductor device includes a first transistor including a first source electrode and a first drain electrode; a first channel formation region for which an oxide semiconductor material is used and to which the first source electrode and the first drain electrode are electrically connected; a first gate insulating layer over the first channel formation region; and a first gate electrode over the first gate insulating layer. One of the first source electrode and the first drain electrode of the first transistor and one electrode of a capacitor are electrically connected to each other.

    Abstract translation: 本发明的目的是提供一种具有新颖结构的半导体器件，其中在数据存储时间中，即使在不提供电力的情况下也可以存储所存储的数据，并且对写入次数没有限制。 半导体器件包括：第一晶体管，包括第一源极和第一漏极; 使用氧化物半导体材料并且第一源电极和第一漏电极电连接的第一沟道形成区域; 在所述第一通道形成区域上的第一栅极绝缘层; 以及在所述第一栅极绝缘层上方的第一栅电极。 第一晶体管的第一源电极和第一漏电极之一和电容器的一个电极彼此电连接。

    Semiconductor device
    90.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08995218B2

    公开(公告)日：2015-03-31

    申请号：US13783573

    申请日：2013-03-04

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Jun Koyama

    IPC: G11C5/14 ,  G06F1/20 ,  G06F1/32

    CPC classification number: G11C5/14 ,  G06F1/206 ,  G06F1/3203 ,  G11C5/148 ,  G11C7/00 ,  H01L27/1203 ,  H01L29/786

    Abstract: To provide a semiconductor device including a plurality of circuit blocks each of which is capable of performing power gating by setting off periods appropriate to temperatures of the respective circuit blocks. Specifically, the semiconductor device includes an arithmetic circuit, a memory circuit configured to hold data obtained by the arithmetic circuit, a power supply control switch configured to control supply of the power supply voltage to the arithmetic circuit, a temperature detection circuit configured to detect the temperature of the memory circuit and to estimate overhead from the temperature, and a controller configured to set a period during which supply of the power supply voltage is stopped in the case where a power consumption of the arithmetic circuit during the period is larger than the overhead period and to control the power supply control switch.

    Abstract translation: 提供一种包括多个电路块的半导体器件，每个电路块能够通过适当地适应各个电路块的温度的周期来执行电源门控。 具体地说，半导体装置具有运算电路，保存由运算电路得到的数据的存储电路，配置为控制向运算电路供给电源电压的电源控制开关，配置为检测运算电路 存储电路的温度和从温度估计开销;以及控制器，被配置为设置在该期间内的运算电路的功耗大于开销的情况下停止供电电压的期间 周期并控制电源控制开关。

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