Method for manufacturing flexible semiconductor device
    82.
    发明授权
    Method for manufacturing flexible semiconductor device 有权
    柔性半导体器件的制造方法

    公开(公告)号:US08435842B2

    公开(公告)日:2013-05-07

    申请号:US12681399

    申请日:2009-07-30

    IPC分类号: H01L21/00

    摘要: A method for manufacturing a flexible semiconductor device comprises (i) forming an insulating film on the upper surface of a resin film, (ii) forming a pattern of extraction electrodes on the upper surface of the resin film, (iii) forming a semiconductor layer on the insulating film in such a manner that the semiconductor layer is in contact with the pattern of extraction electrodes, and (iv) forming a sealing resin layer on the upper surface of the resin film in such a manner that the sealing resin layer covers the semiconductor layer and the pattern of extraction electrodes, wherein at least one of the stepsof the above steps (i) to (iv) is carried out by a printing method. With this manufacturing method, various layers can be formed by a simple printing process without using a vacuum process, photolithography, or the like.

    摘要翻译: 一种制造柔性半导体器件的方法包括:(i)在树脂膜的上表面上形成绝缘膜,(ii)在树脂膜的上表面上形成提取电极的图案,(iii)形成半导体层 以使得半导体层与提取电极的图案接触的方式在绝缘膜上,以及(iv)在树脂膜的上表面上形成密封树脂层,使得密封树脂层覆盖 半导体层和提取电极的图案,其中通过印刷方法进行上述步骤(i)至(iv)中的步骤中的至少一个。 利用该制造方法,可以通过简单的印刷工艺形成各种层,而不使用真空工艺,光刻等。

    Flexible semiconductor device and method for manufacturing same
    83.
    发明授权
    Flexible semiconductor device and method for manufacturing same 有权
    柔性半导体器件及其制造方法

    公开(公告)号:US08343822B2

    公开(公告)日:2013-01-01

    申请号:US12681445

    申请日:2009-07-30

    IPC分类号: H01L21/84 H01L21/00

    摘要: A method for manufacturing a flexible semiconductor device includes (i) forming an insulating film on the upper surface of metal foil, (ii) forming an extraction electrode pattern on the upper surface of the metal foil, (iii) forming a semiconductor layer on the insulating film such that the semiconductor layer is in contact with the extraction electrode pattern, (iv) forming a sealing resin layer on the upper surface of the metal foil such that the sealing resin layer covers the semiconductor layer and the extraction electrode pattern, and (v) forming electrodes by etching the metal foil, the metal foil being used as a support for the insulating film, the extraction electrode pattern, the semiconductor layer, and the sealing resin layer formed in (i) to (iv) and used as a constituent material for the electrodes in (v). The metal foil need not be stripped, and a high-temperature process can be used.

    摘要翻译: 一种制造柔性半导体器件的方法包括:(i)在金属箔的上表面上形成绝缘膜,(ii)在金属箔的上表面上形成引出电极图案,(iii)在金属箔的上表面上形成半导体层 绝缘膜,使得半导体层与引出电极图案接触,(iv)在金属箔的上表面上形成密封树脂层,使得密封树脂层覆盖半导体层和引出电极图案,和( v)通过蚀刻金属箔形成电极,金属箔用作绝缘膜的支撑体,引出电极图案,半导体层和形成在(i)至(iv)中的密封树脂层,并用作 (v)中的电极的构成材料。 金属箔不需要剥离,可以使用高温工艺。

    Semiconductor device, semiconductor device manufacturing method and image display device
    84.
    发明授权
    Semiconductor device, semiconductor device manufacturing method and image display device 有权
    半导体器件,半导体器件制造方法和图像显示器件

    公开(公告)号:US08143617B2

    公开(公告)日:2012-03-27

    申请号:US12667297

    申请日:2008-07-01

    摘要: A semiconductor device having semiconductor elements disposed with higher density and a method for manufacturing the same are provided. An image display device employing the semiconductor device is also provided. A semiconductor device comprises a resin film having a through hole; and a semiconductor element comprising a gate electrode disposed on the inner wall of the through hole, an insulating layer that covers the gate electrode within the through hole, an organic semiconductor disposed on the insulating layer within the through hole, and a source electrode and a drain electrode which are electrically connected to the organic semiconductor.

    摘要翻译: 提供了具有以更高密度设置的半导体元件的半导体器件及其制造方法。 还提供了采用半导体器件的图像显示装置。 半导体器件包括具有通孔的树脂膜; 以及半导体元件,包括设置在通孔的内壁上的栅电极,覆盖通孔内的栅电极的绝缘层,设置在通孔内的绝缘层上的有机半导体,以及源电极和 电极与有机半导体电连接。

    Magnetic sheet with stripe-arranged magnetic grains, RFID magnetic sheet, magnetic shielding sheet and method of manufacturing the same
    85.
    发明授权
    Magnetic sheet with stripe-arranged magnetic grains, RFID magnetic sheet, magnetic shielding sheet and method of manufacturing the same 有权
    具有带状磁性颗粒的磁性片,RFID磁性片,磁屏蔽片及其制造方法

    公开(公告)号:US07981528B2

    公开(公告)日:2011-07-19

    申请号:US11848407

    申请日:2007-08-31

    IPC分类号: B32B15/00

    摘要: A water-repelling layer is formed on a resin film, and a stripe pattern region is formed so as to be positioned within a surface region of the water-repelling layer and so as to be relatively hydrophilic with respect to water repellency of the water-repelling layer. A magnetic stripe pattern is formed of needle-shaped magnetic grains oriented and aggregated in the stripe pattern region. The needle-shaped magnetic grains are arranged in a desirable state in a predetermined stripe pattern, with a high magnetic permeability and a magnetic sheet with stripe-arranged magnetic grains that is thin and flexible is obtained.

    摘要翻译: 在树脂膜上形成防水层,并且形成条纹图案区域,以便位于防水层的表面区域内,并且相对于水溶性防水层的防水性而相对亲水, 排斥层。 磁条图案由在条纹图案区域中定向和聚集的针状磁性颗粒形成。 针状磁性颗粒以预定的条纹图案被布置成期望的状态,具有高磁导率,并且获得薄且柔性的带状排列的磁性颗粒的磁性片。

    MANUFACTURING METHOD OF FLEXIBLE SEMICONDUCTOR DEVICE
    86.
    发明申请
    MANUFACTURING METHOD OF FLEXIBLE SEMICONDUCTOR DEVICE 有权
    柔性半导体器件的制造方法

    公开(公告)号:US20110121298A1

    公开(公告)日:2011-05-26

    申请号:US13054049

    申请日:2010-02-05

    IPC分类号: H01L29/786 H01L21/336

    摘要: A method includes the steps of preparing a multilayer film 80 formed by sequentially stacking a first metal layer 10, an inorganic insulating layer 20, a semiconductor layer 30, and a second metal layer 40; forming a source electrode 42s and a drain electrode 42d comprised of the second metal layer 40 by etching the second metal layer 40; pressure-bonding a resin layer 50 onto a surface of the multilayer film 80 provided with the source electrode 42s and the drain electrode 42d to burry the source electrode 42s and the drain electrode 42d in the resin layer 50; and forming a gate electrode 10g comprised of the first metal layer 10 by etching the first metal layer 10. The inorganic insulating layer 20g functions as a gate insulating film. The semiconductor layer 30 functions as a channel.

    摘要翻译: 一种方法包括制备通过顺序堆叠第一金属层10,无机绝缘层20,半导体层30和第二金属层40而形成的多层膜80的步骤; 通过蚀刻第二金属层40形成由第二金属层40构成的源电极42s和漏电极42d; 将树脂层50压接到设置有源电极42s和漏电极42d的多层膜80的表面,以将树脂层50中的源电极42s和漏电极42d嵌入; 以及通过蚀刻第一金属层10形成由第一金属层10构成的栅极电极10g。无机绝缘层20g用作栅极绝缘膜。 半导体层30用作沟道。