Nonvolatile memory device or a single crystal silicon film
    81.
    发明授权
    Nonvolatile memory device or a single crystal silicon film 失效
    非易失存储器件或单晶硅膜

    公开(公告)号:US4653026A

    公开(公告)日:1987-03-24

    申请号:US403016

    申请日:1982-07-29

    IPC分类号: G11C11/40 H01L27/088

    CPC分类号: H01L27/088

    摘要: A nonvolatile memory device comprising a plurality of memory cells composed of insulated gate-type field effect semiconductor elements, terminals for applying a writing voltage and a reading voltage to said plurality of memory cells, wirings for connecting in common insulated gate-type field effect transistor elements of said plurality of memory cells, and resistance elements or MISFET's which are connected between the wirings and the terminals, wherein said resistance elements or MISFET's are composed of a polycrystalline silicon film or a single crystal silicon film formed on the field insulation film.

    摘要翻译: 一种非易失性存储器件,包括由绝缘栅型场效应半导体元件构成的多个存储单元,用于对所述多个存储单元施加写入电压和读取电压的端子,用于连接公共绝缘栅型场效应晶体管的布线 所述多个存储单元的元件,以及连接在布线和端子之间的电阻元件或MISFET,其中所述电阻元件或MISFET由形成在场隔离膜上的多晶硅膜或单晶硅膜构成。

    Injection timing control device in a distributor-type fuel injection pump
    82.
    发明授权
    Injection timing control device in a distributor-type fuel injection pump 失效
    分配式燃油喷射泵中的喷油正时控制装置

    公开(公告)号:US4589394A

    公开(公告)日:1986-05-20

    申请号:US738075

    申请日:1985-05-24

    申请人: Satoru Ito

    发明人: Satoru Ito

    IPC分类号: F02D1/18 F02M41/12 F02M59/20

    CPC分类号: F02M41/128

    摘要: A distributor-type fuel injection pump for an internal combustion engine, having an injection timing control device for controlling the fuel injection timing by a timer piston displaceable in response to change of the fuel pressure within a suction space of the pump filled with fuel having a pressure variable as a function of the rotational speed of the engine. The pump housing has drain passage means formed in a partition wall thereof partitioning the injection timing control device from the suction space and in the timer piston, and communicating the suction space with a zone under a lower pressure, to always drain fuel within the suction space to the lower pressure zone during the operation of the pump. Therefore, a desired fuel injection timing characteristic substantially free of a hysteresis can be obtained within a predetermined rotational speed region of the engine.

    摘要翻译: 一种用于内燃机的分配器式燃料喷射泵,具有喷射正时控制装置,用于通过定时器活塞控制燃料喷射正时,所述定时器活塞响应于填充有具有燃料的燃料的泵的吸入空间内的燃料压力的变化而可移位 压力变量作为发动机转速的函数。 泵壳体具有形成在其分隔壁中的排出通道装置,其将喷射正时控制装置与吸入空间和计时器活塞分隔开,并将吸入空间与较低压力的区域连通,以总是在吸入空间内排出燃料 在泵的运行期间到达较低的压力区域。 因此,可以在发动机的预定旋转速度区域内获得基本上没有滞后的期望的燃料喷射正时特性。

    Fuel injection pump
    83.
    发明授权
    Fuel injection pump 失效
    燃油喷射泵

    公开(公告)号:US4509470A

    公开(公告)日:1985-04-09

    申请号:US353130

    申请日:1982-03-01

    摘要: A fuel injection advance angle control member (28) and a fuel control member (52) are manually and simultaneously controllable to increase the fuel injection angle and the volume of fuel injection, before an engine is started. A knob (112) is located in a position accessible for manipulation. A wire (110) connects the knob (112) to cams (102, 82) which are associated with the fuel injection advance angle control member (28) and the fuel control member (52), respectively. The connection between the knob (112) and the cam (102) includes a spring (210, 300) which is yieldable when the knob (112) is pulled, so that a reaction force counteracting the pulling effort is reduced to promote manipulation with a minimum of effort. Upon an engine start, the resilient force accumulated in the spring (210, 300) is released to move the member (28) to a desired advanced angle position through the cam (102).

    摘要翻译: 在发动机起动之前,燃料喷射提前角控制构件(28)和燃料控制构件(52)被手动地同时控制以增加燃料喷射角度和燃料喷射量。 旋钮(112)位于可操作的位置。 导线(110)将旋钮(112)分别连接到与燃料喷射提前角控制构件(28)和燃料控制构件(52)相关联的凸轮(102,82)。 旋钮(112)和凸轮(102)之间的连接包括弹簧(210,300),弹簧(210,300)在拉动旋钮(112)时是可屈服的,从而减小了抵抗牵引力的反作用力,以促进操纵 最小的努力。 在发动机启动时,释放积聚在弹簧(210,300)中的弹性力,以通过凸轮(102)将构件(28)移动到期望的提前角位置。

    Method for fabricating a semiconductor device by controlled diffusion
between adjacent layers
    86.
    发明授权
    Method for fabricating a semiconductor device by controlled diffusion between adjacent layers 失效
    通过相邻层之间的受控扩散制造半导体器件的方法

    公开(公告)号:US4239559A

    公开(公告)日:1980-12-16

    申请号:US30812

    申请日:1979-04-17

    申请人: Satoru Ito

    发明人: Satoru Ito

    摘要: A method for fabricating a semiconductor device is disclosed, which comprises forming a first polycrystalline silicon film containing an impurity such as phosphorus or boron on the surface of a silicon oxide film, forming an impurity-free second polycrystalline silicon film contiguous to the first polycrystalline silicon film, diffusing the impurity contained in the first polycrystalline silicon film into the second polycrystalline silicon film to form an impurity-containing region, and oxidizing the impurity-containing region to electrically separate the first and second polycrystalline silicon films from each other by the resulting oxide.

    摘要翻译: 公开了一种制造半导体器件的方法,其包括在氧化硅膜的表面上形成含有诸如磷或硼的杂质的第一多晶硅膜,形成与第一多晶硅邻接的无杂质的第二多晶硅膜 将包含在第一多晶硅膜中的杂质扩散到第二多晶硅膜中以形成含杂质区域,并且使含杂质区域氧化以将第一和第二多晶硅膜彼此电分离,由此产生的氧化物 。

    Thermoelectric conversion material and thermoelectric conversion module

    公开(公告)号:US10508324B2

    公开(公告)日:2019-12-17

    申请号:US12864068

    申请日:2009-01-22

    摘要: A thermoelectric conversion material having excellent thermoelectric performance over a wide temperature range, and a thermoelectric conversion module providing excellent junctions between thermoelectric conversion materials and electrodes. An R-T-M-X-N thermoelectric conversion material has a structure expressed by the following formula: RrTt-mMmXx-nNn (0≤r≤1, 3≤t−m≤5, 0≤m≤0.5, 10≤x≤15, 0≤n≤2), where R represents three or more elements selected from the group consisting of rare earth elements, alkali metal elements, alkaline-earth metal elements, group 4 elements, and group 13 elements, T represents at least one element selected from Fe and Co, M represents at least one element selected from the group consisting of Ru, Os, Rh, Ir, Ni, Pd, Pt, Cu, Ag, and Au, X represents at least one element selected from the group consisting of P, As, Sb, and Bi, and N represents at least one element selected from Se and Te.