摘要:
A nonvolatile memory device comprising a plurality of memory cells composed of insulated gate-type field effect semiconductor elements, terminals for applying a writing voltage and a reading voltage to said plurality of memory cells, wirings for connecting in common insulated gate-type field effect transistor elements of said plurality of memory cells, and resistance elements or MISFET's which are connected between the wirings and the terminals, wherein said resistance elements or MISFET's are composed of a polycrystalline silicon film or a single crystal silicon film formed on the field insulation film.
摘要:
A distributor-type fuel injection pump for an internal combustion engine, having an injection timing control device for controlling the fuel injection timing by a timer piston displaceable in response to change of the fuel pressure within a suction space of the pump filled with fuel having a pressure variable as a function of the rotational speed of the engine. The pump housing has drain passage means formed in a partition wall thereof partitioning the injection timing control device from the suction space and in the timer piston, and communicating the suction space with a zone under a lower pressure, to always drain fuel within the suction space to the lower pressure zone during the operation of the pump. Therefore, a desired fuel injection timing characteristic substantially free of a hysteresis can be obtained within a predetermined rotational speed region of the engine.
摘要:
A fuel injection advance angle control member (28) and a fuel control member (52) are manually and simultaneously controllable to increase the fuel injection angle and the volume of fuel injection, before an engine is started. A knob (112) is located in a position accessible for manipulation. A wire (110) connects the knob (112) to cams (102, 82) which are associated with the fuel injection advance angle control member (28) and the fuel control member (52), respectively. The connection between the knob (112) and the cam (102) includes a spring (210, 300) which is yieldable when the knob (112) is pulled, so that a reaction force counteracting the pulling effort is reduced to promote manipulation with a minimum of effort. Upon an engine start, the resilient force accumulated in the spring (210, 300) is released to move the member (28) to a desired advanced angle position through the cam (102).
摘要:
A semiconductor device has a passivation layer disposed on a semiconductor body having at least one circuit element therein. This layer is made of a silicon nitride material containing 0.8-5.9 weight-% of H, together with 61-70 weight-% of Si, 25-37 weight-% of N and up to 0.6 weight-% of O and has a density of 2.9-3.05 gr/cm.sup.3.
摘要:
A process for forming a metallic paint film comprising(a) coating on a substrate surface a metallic paint containing as a vehicle component a modified vinyl-type copolymer obtained by copolymerizing 5-75 weight % of cellulose acetate butyrate with 95-25 weight % of a monomeric component consisting of one or more vinyl-type monomers,(b) if necessary, coating a thermosetting resin-type clear topcoating while said coated metallic paint film is in the unhardened state and(c) then baking the paint film.
摘要:
A method for fabricating a semiconductor device is disclosed, which comprises forming a first polycrystalline silicon film containing an impurity such as phosphorus or boron on the surface of a silicon oxide film, forming an impurity-free second polycrystalline silicon film contiguous to the first polycrystalline silicon film, diffusing the impurity contained in the first polycrystalline silicon film into the second polycrystalline silicon film to form an impurity-containing region, and oxidizing the impurity-containing region to electrically separate the first and second polycrystalline silicon films from each other by the resulting oxide.
摘要:
A thermoelectric conversion material having excellent thermoelectric performance over a wide temperature range, and a thermoelectric conversion module providing excellent junctions between thermoelectric conversion materials and electrodes. An R-T-M-X-N thermoelectric conversion material has a structure expressed by the following formula: RrTt-mMmXx-nNn (0≤r≤1, 3≤t−m≤5, 0≤m≤0.5, 10≤x≤15, 0≤n≤2), where R represents three or more elements selected from the group consisting of rare earth elements, alkali metal elements, alkaline-earth metal elements, group 4 elements, and group 13 elements, T represents at least one element selected from Fe and Co, M represents at least one element selected from the group consisting of Ru, Os, Rh, Ir, Ni, Pd, Pt, Cu, Ag, and Au, X represents at least one element selected from the group consisting of P, As, Sb, and Bi, and N represents at least one element selected from Se and Te.
摘要:
A nonvolatile memory element including: a first electrode; a second electrode; a variable resistance layer that is between the first electrode and the second electrode and includes, as stacked layers, a first variable resistance layer connected to the first electrode and a second variable resistance layer connected to the second electrode; and a side wall protecting layer that has oxygen barrier properties and covers a side surface of the variable resistance layer. The first variable resistance layer includes a first metal oxide and a third metal oxide formed around the first metal oxide and having an oxygen deficiency lower than that of the first metal oxide, and the second variable resistance layer includes a second metal oxide having an oxygen deficiency lower than that of the first metal oxide.
摘要:
An integrated circuit device includes first to Nth circuit blocks CB1 to CBN, a first interface region disposed along a fourth side and on the D2 side of the first to Nth circuit blocks CB1 to CBN, and a second interface region disposed along a second side and on the D4 side of the first to Nth circuit blocks CB1 to CBN. A local line LLG formed using a wiring layer lower than an Ith layer is provided between the adjacent circuit blocks as at least one of a signal line and a power supply line. Global lines GLG and GLD formed using the Ith or higher wiring layer are provided along the direction D1 over the circuit block disposed between the nonadjacent circuit blocks as at least one of a signal line and a power supply line.
摘要:
The present invention relates to pyrazolopyridines and imidazopyridines which are inhibitors of the kinase PDK1 and are thus useful for the treatment of myeloproliferative disorders or cancer. The compounds are also useful as inhibitors of other kinases such as FGFR3, NTRK3, RP-S6K and WEE1. Furthermore, the present compounds also selectively inhibit microtubule affinity regulating kinase (MARK) and are therefore useful for the treatment or prevention of Alzheimer's disease.