Semiconductor device substrate and semiconductor device
    85.
    发明授权
    Semiconductor device substrate and semiconductor device 有权
    半导体器件衬底和半导体器件

    公开(公告)号:US08659120B2

    公开(公告)日:2014-02-25

    申请号:US13173907

    申请日:2011-06-30

    IPC分类号: H01L29/02 H01L23/48

    摘要: There is provided a semiconductor device substrate including: a multi-layer wiring layer; a first capacitor pad which is provided on an uppermost layer of the multi-layer wiring layer, and which includes a first power supply pad connected to a power supply layer of the multi-layer wiring layer through a first via and a first ground pad connected to a ground layer of the multi-layer wiring layer through a second via; and a second capacitor pad which is provided on the uppermost layer of the multi-layer wiring layer, and which includes a second power supply pad connected to the first power supply pad through a first wire and a second ground pad connected to the first ground pad through a second wire.

    摘要翻译: 提供一种半导体器件基板,包括:多层布线层; 第一电容器衬垫,其设置在所述多层布线层的最上层,并且包括通过第一通孔连接到所述多层布线层的电源层的第一电源焊盘和连接到所述多层布线层的第一接地焊盘的第一电源焊盘 通过第二通孔连接到多层布线层的接地层; 以及第二电容器焊盘,其设置在所述多层布线层的最上层,并且包括通过第一布线连接到所述第一电源焊盘的第二电源焊盘和连接到所述第一接地焊盘的第二接地焊盘 通过第二根线。