公开(公告)号：US20230282758A1

公开(公告)日：2023-09-07

申请号：US18005683

申请日：2020-12-14

Applicant: Wuhan Optical Valley Information Optoelectronics Innovation Center Co., Ltd

Inventor： Xiao HU ,  Xi XIAO ,  Daigao CHEN ,  Lei WANG ,  Yuguang ZHANG ,  Miaofeng LI

IPC: H01L31/107 ,  H01L31/0224 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/18

CPC classification number: H01L31/107 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/1804

Abstract: A laterally structured avalanche photodetector and a manufacturing method therefor. The laterally structured avalanche photodetector comprises: a substrate, comprising a first semiconductor material region (103), an avalanche region (115) being formed in the first semiconductor material region (103); a first epitaxial growth layer (120), formed as an absorption region (180), the upper surface of the first epitaxial growth layer (120) being a light absorption surface and protruding from the upper surface of the first semiconductor material region (103), and the lower surface of the first epitaxial growth layer (120) being lower than the upper surface of the first semiconductor material region (103); and a second epitaxial growth layer (130), at least comprising a first portion and a second portion which are located at two sides of the first epitaxial growth layer (120) in a first direction, the first portion and the second portion respectively covering two side walls of the first epitaxial growth layer (120) protruding above the first semiconductor material region (103), the first portion and the second portion being respectively formed as at least a part of a first charge region (113) and at least a part of a second charge region (114), and the first charge region (113), the absorption region (180), the second charge region (114) and the avalanche region (115) at least partially overlapping in the first direction.

公开(公告)号：US20230268453A1

公开(公告)日：2023-08-24

申请号：US17771661

申请日：2020-10-27

Applicant: Kyocera Corporation

Inventor： Akihiko FUNAHASHI

IPC: H01L31/12 ,  H01L31/0232

CPC classification number: H01L31/12 ,  H01L31/02327

Abstract: A mounting board includes a base portion and a frame portion. The base portion includes a first upper surface including a first mounting region. The frame portion includes a second upper surface including a second mounting region and an inner wall surface intersecting with the second upper surface. The inner wall surface of the frame portion includes a first portion connecting with the second upper surface, and a second portion located opposite to the first portion with the first mounting region interposed therebetween. In the second portion, a first film that absorbs light and having a reflectance lower than a reflectance of the inner wall surface of the frame portion is located.

公开(公告)号：US11726274B1

公开(公告)日：2023-08-15

申请号：US17516583

申请日：2021-11-01

Applicant: Wavefront Research, Inc.

Inventor： Randall C. Veitch ,  Thomas W. Stone

IPC: G02B6/42 ,  H05K1/18 ,  H05K1/02 ,  H05K3/28 ,  H01L31/0232

CPC classification number: G02B6/4212 ,  G02B6/4204 ,  G02B6/4239 ,  G02B6/4244 ,  H05K1/0274 ,  H05K1/181 ,  H01L31/02327 ,  H05K3/284 ,  H05K2201/10121 ,  H05K2201/10128 ,  H05K2201/10143 ,  Y02P70/50 ,  Y10T29/49002 ,  Y10T29/49117 ,  Y10T29/49144

Abstract: Compact ASIC, chip-on-board, flip-chip, interposer, and related packaging techniques are incorporated to minimize the footprint of optoelectronic interconnect devices, including the Optical Data Pipe. In addition, ruggedized packaging techniques are incorporated to increase the durability and application space for optoelectronic interconnect devices, including an Optical Data Pipe.

公开(公告)号：US11719575B2

公开(公告)日：2023-08-08

申请号：US16641300

申请日：2018-08-16

Applicant: TOHOKU UNIVERSITY

Inventor： Yoshiaki Kanamori ,  Kazuhiro Hane ,  Daisuke Ema

IPC: G01J3/18 ,  G01J3/51 ,  G02B6/12 ,  G02B6/122 ,  G02B6/124 ,  G02B6/13 ,  H01L27/144 ,  H01L31/0216 ,  H01L31/0232 ,  H01L31/18

CPC classification number: G01J3/18 ,  G01J3/51 ,  G02B6/12004 ,  G02B6/124 ,  G02B6/1226 ,  G02B6/13 ,  H01L27/1446 ,  H01L31/02162 ,  H01L31/02327 ,  H01L31/18 ,  G02B2006/12107 ,  G02B2006/12123 ,  G02B2006/12138

Abstract: The present invention provides a transmission guided-mode resonant grating integrated spectroscopy device (transmission GMRG integrated spectroscopy device) characterized by comprising, disposed in this order on an optical detector array in which a plurality of diodes are mounted on a substrate made of a semiconductor: a transparent spacer layer; a waveguide layer; a transparent buffer layer provided as desired; a transmission metallic grating layer having a thickness causing surface plasmon; and a transparent protection film layer which is provided as desired.

公开(公告)号：US11703445B2

公开(公告)日：2023-07-18

申请号：US17333870

申请日：2021-05-28

Applicant: VisEra Technologies Company Limited

Inventor： Hsin-Yi Hsieh

IPC: G02B5/18 ,  G01N21/31 ,  H01L31/0232

CPC classification number: G01N21/31 ,  G02B5/1823 ,  G02B5/1866 ,  H01L31/02327 ,  G01N2201/0635

Abstract: A biosensor is provided. The biosensor includes a plurality of sensor units. Each of the sensor units includes one or more photodiodes, a first aperture feature disposed above the photodiodes, an interlayer disposed on the first aperture feature, a second aperture feature disposed on the interlayer, and a waveguide disposed above the second aperture feature. The second aperture feature includes an upper grating element and the first aperture feature includes one or more lower grating elements, and a grating period of the upper grating element is less than or equal to a grating period of the one or more lower grating elements. A difference of the absolute values between a first polarizing angle of the upper and lower grating elements in one of the sensor units and a second polarizing angle of the upper and lower grating elements in adjacent one of the sensor units is 90°.

公开(公告)号：US20230213713A1

公开(公告)日：2023-07-06

申请号：US17568965

申请日：2022-01-05

Applicant: SCIDATEK INC.

Inventor： Tomoyuki Izuhara ,  Junichiro Fujita ,  Louay Eldada

IPC: G02B6/42 ,  G02B5/20 ,  H01L23/00 ,  H01L31/0232 ,  H01L31/105

CPC classification number: G02B6/4215 ,  G02B5/201 ,  G02B6/4204 ,  H01L24/08 ,  H01L24/80 ,  H01L31/105 ,  H01L31/02327 ,  H01L2224/08145 ,  H01L2224/80895 ,  H01L2224/80896

Abstract: A large single-photon avalanche diode (SPAD) array is integrated with optical waveguide (WG) based devices. SPAD is a very sensitive optical detector fabricated on a semiconductor chip and WG structures are also built into the same chip. WG structures are configured to accumulate SPAD detection current. Together, they form an ultra-sensitive optical detector with high-speed response and a large aperture.

公开(公告)号：US11695090B2

公开(公告)日：2023-07-04

申请号：US17958868

申请日：2022-10-03

Applicant: THE TRUSTEES OF DARTMOUTH COLLEGE

Inventor： Zhiyuan Wang ,  Xiaoxin Wang ,  Jifeng Liu

IPC: H01L31/0232 ,  H01L31/119 ,  H01L27/146 ,  H01L27/148 ,  H01L27/144

CPC classification number: H01L31/119 ,  H01L27/146 ,  H01L27/1446 ,  H01L27/14875 ,  H01L31/02327

Abstract: Disclosed are infrared (IR) light detectors. The detectors operate by generating hot electrons in a metallic absorber layer on photon absorption, the electrons being transported through an energy barrier of an insulating layer to a metal or semiconductor conductive layer. The energy barrier is set to bar response to wavelengths longer than a maximum wavelength. Particular embodiments also have a pattern of metallic shapes above the metallic absorber layer that act to increase photon absorption while reflecting photons of short wavelengths; these particular embodiments have a band-pass response.

公开(公告)号：US11688824B2

公开(公告)日：2023-06-27

申请号：US17307112

申请日：2021-05-04

Applicant: Silergy Semiconductor Technology (Hangzhou) LTD

Inventor： Zheng Lv ,  Huisen He ,  Xianguo Huang

IPC: H01L31/18 ,  H01L31/0232 ,  H01L31/101 ,  H01L31/0216 ,  H01L27/146

CPC classification number: H01L31/186 ,  H01L27/1462 ,  H01L27/14685 ,  H01L31/02161 ,  H01L31/02327 ,  H01L31/101

Abstract: A method of manufacturing an optoelectronic integrated device can include: providing a semiconductor substrate including at least one optoelectronic device in the semiconductor substrate; forming a first dielectric layer on a first surface of the semiconductor substrate; forming a multilayer insulating layer on the first dielectric layer; forming a first opening in the multilayer insulating layer to expose the first dielectric layer above the optoelectronic device area; and forming a second dielectric layer on the dielectric layer, where the first dielectric layer and the second dielectric layer are anti-reflection layers.

公开(公告)号：US20230197702A1

公开(公告)日：2023-06-22

申请号：US17990158

申请日：2022-11-18

Applicant: EMINENT ELECTRONIC TECHNOLOGY CORP. LTD.

Inventor： Zhong-Hao DENG ,  Chien-Yu Huang ,  Yi-Yung CHEN ,  KAO-PIN WU

IPC: H01L25/16 ,  H01L23/053 ,  H01L23/552 ,  H01L31/0232

CPC classification number: H01L25/167 ,  H01L25/165 ,  H01L23/053 ,  H01L23/552 ,  H01L31/02327 ,  H01L2224/48227 ,  H01L24/48

Abstract: A sunk-type package structure includes a substrate, an optical sensing chip, and a housing. The substrate has a cavity with a first depth. The optical sensing chip is disposed inside the cavity and electrically connected with the substrate. A surface of the optical sensing chip has a first sensing area for sensing light. The housing covers the substrate and the optical sensing chip. The housing has a light-permeable portion disposed above the first sensing area.

公开(公告)号：US11682661B2

公开(公告)日：2023-06-20

申请号：US15929340

申请日：2020-04-27

Applicant: AT&S Austria Technologie & Systemtechnik Aktiengesellschaft

Inventor： Andreas Zluc ,  Johannes Stahr

IPC: H01L25/16 ,  H01L31/0203 ,  H01L31/0232 ,  H01L31/18 ,  H01L33/48 ,  H01L33/58 ,  H01L33/60 ,  H01L33/00

CPC classification number: H01L25/165 ,  H01L25/167 ,  H01L31/0203 ,  H01L31/02325 ,  H01L31/18 ,  H01L33/005 ,  H01L33/486 ,  H01L33/58 ,  H01L33/60

Abstract: A hermetic package includes a base body, wherein dielectric material of a bottom of the base body is made of an organic material, an optical component mounted on the base body, and inorganic material hermetically enclosing the optical component along all surrounding sides.