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1.发明公开公开(公告)号：US20240304746A1
公开(公告)日：2024-09-12
申请号：US18601486
申请日：2024-03-11
IPC分类号： H01L31/18
CPC分类号： H01L31/184 , H01L31/186
摘要： A method for stripping a III-V semiconductor layer epitaxially grown on a semiconductor wafer, and the semiconductor wafer is designed as a substrate and has an upper side, a buffer layer and the semiconductor layer being formed on the upper side, and a carrier layer being formed above the semiconductor layer, and the sacrificial layer having a higher wet chemical etching rate compared to the semiconductor layer, the semiconductor layer being introduced into a receiving device in a process step, and position data of points arranged on the upper side being read out from a memory device in a process step, and a laser approaching the points based on the position data in a process step, and holes having a base being produced through the carrier layer and the layer formed beneath the carrier layer via the laser, the base of the hole being formed within the buffer layer.
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公开(公告)号：US20240282873A1
公开(公告)日：2024-08-22
申请号：US18583680
申请日：2024-02-21
发明人： Ivica ZRINSCAK
IPC分类号： H01L31/044 , H01L31/041 , H01L31/05
CPC分类号： H01L31/044 , H01L31/041 , H01L31/0508 , H01L31/0512
摘要： Protection of space solar cells in an arrangement in the form of a string extending in an X direction, and two directly adjacent space solar cells in the X direction in each case are electrically connected to each other in series with the aid of a metallic connector. The string has a first end and a second end opposite the first end, and a protection arrangement formed along a Y direction is formed on one of the two ends. The protection arrangement has a first string protection diode formed in the Y direction and a metal strip and a second string protection diode. The protection arrangement is electrically connected to one of the two ends of the string and each string protection diode is uncased and has exactly one metal contact on the upper side and exactly one metal contact on the underside.
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公开(公告)号：US11859310B2
公开(公告)日：2024-01-02
申请号：US17129737
申请日：2020-12-21
发明人： Clemens Waechter , Gregor Keller , Daniel Fuhrmann
CPC分类号： C30B29/40 , C30B25/14 , C30B25/165 , C30B25/18 , H01L21/0251 , H01L21/0257 , H01L21/0262 , H01L21/02463 , H01L21/02538 , H01L21/02546 , H01L21/02576 , H01L21/02579
摘要： A vapor phase epitaxy method of growing a III-V layer with a doping that changes from a first conductivity type to a second conductivity type on a surface of a substrate or a preceding layer in a reaction chamber from the vapor phase from an epitaxial gas flow comprising a carrier gas, at least one first precursor for an element from main group III, and at least one second precursor for an element from main group V, wherein when a first growth height is reached, a first initial doping level of the first conductivity type is set by means of a ratio of a first mass flow of the first precursor to a second mass flow of the second precursor in the epitaxial gas flow, the first initial doping level is then reduced to a second initial doping level of the first or low second conductivity type.
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公开(公告)号：US11837672B2
公开(公告)日：2023-12-05
申请号：US17007517
申请日：2020-08-31
发明人： Tim Kubera , Bianca Fuhrmann
IPC分类号： H01L31/00 , H01L31/0224 , H01L31/056 , H01L31/0216 , H01L31/0687
CPC分类号： H01L31/02245 , H01L31/02167 , H01L31/056 , H01L31/0687
摘要： A stacked multijunction solar cell having a dielectric insulating layer system, a germanium substrate, which forms an underside of the multijunction solar cell, a germanium subcell and at least two III-V subcells, which follow each other in the specified order, the insulating layer system includes a layer sequence made up of at least one bottom insulating layer, which is integrally connected to a first surface section of the multijunction solar cell and a top insulating layer forming an upper side of the insulating layer system, and a metal coating of the multijunction solar cell is integrally and electrically conductively connected to a second surface section abutting the first surface section of the multijunction solar cell and is integrally connected to a section of the upper side of the insulating layer system, and the top insulating layer comprises amorphous silicon or is made up of amorphous silicon.
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公开(公告)号：US11830962B2
公开(公告)日：2023-11-28
申请号：US17668133
申请日：2022-02-09
发明人： Alexander Frey , Benjamin Hagedorn
IPC分类号： H01L31/18 , H01L31/0384 , H01L31/0216 , H01L31/0224
CPC分类号： H01L31/1808 , H01L31/02167 , H01L31/02245 , H01L31/0384 , H01L31/1852 , H01L31/1868 , Y02E10/544
摘要： A method for structuring an insulating layer on a semiconductor wafer, at least comprising the steps of: Provision of a semiconductor wafer with a top, a bottom and comprising multiple solar cell stacks, wherein each solar cell stack is a Ge substrate, which forms the bottom of the semiconductor wafer, a Ge subcell and at least two III-V subcells, in the above order, and at least one passage opening, which extends from the top to the bottom of the semiconductor wafer and has a connected side wall, an insulating layer two-dimensionally deposited on the top of the semiconductor wafer, on the side wall of the passage opening and/or on the bottom of the semiconductor wafer, and the deposition of an etch-resistant filling material by means of a printing process on an area of the top which comprises the passage opening, and into the passage opening.
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公开(公告)号：US11588067B2
公开(公告)日：2023-02-21
申请号：US17373228
申请日：2021-07-12
发明人： Matthias Meusel , Alexander Berg , Philipp Schroth
IPC分类号： H01L31/0725 , H01L31/054 , H01L31/074
摘要： A monolithic multi-junction solar cell comprising a first III-V subcell and a second III-V subcell and a third III-V subcell and a fourth Ge subcell, wherein the subcells are stacked on top of one another in the specified order, and the first subcell forms the top subcell and a metamorphic buffer is formed between the third subcell and the fourth subcell and all subcells each have an n-doped emitter layer and a p-doped base layer and the emitter doping in the second subcell is lower than the base doping.
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公开(公告)号：US20220254947A1
公开(公告)日：2022-08-11
申请号：US17668133
申请日：2022-02-09
发明人： Alexander FREY , Benjamin HAGEDORN
IPC分类号： H01L31/18 , H01L31/0384
摘要： A method for structuring an insulating layer on a semiconductor wafer, at least comprising the steps of: Provision of a semiconductor wafer with a top, a bottom and comprising multiple solar cell stacks, wherein each solar cell stack is a Ge substrate, which forms the bottom of the semiconductor wafer, a Ge subcell and at least two III-V subcells, in the above order, and at least one passage opening, which extends from the top to the bottom of the semiconductor wafer and has a connected side wall, an insulating layer two-dimensionally deposited on the top of the semiconductor wafer, on the side wall of the passage opening and/or on the bottom of the semiconductor wafer, and the deposition of an etch-resistant filling material by means of a printing process on an area of the top which comprises the passage opening, and into the passage opening.
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公开(公告)号：US11374140B2
公开(公告)日：2022-06-28
申请号：US17373254
申请日：2021-07-12
IPC分类号： H01L31/0725 , H01L31/0735
摘要： A monolithic metamorphic multi-junction solar cell comprising a first III-V subcell and a second III-V subcell and a third III-V subcell and a fourth Ge subcell, wherein the subcells are stacked on top of each other in the indicated order, and the first subcell forms the topmost subcell, and a metamorphic buffer is formed between the third subcell and the fourth subcell and all subcells each have an n-doped emitter layer and a p-doped base layer, and the emitter layer of the second subcell is greater than the base layer.
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公开(公告)号：US20220115501A1
公开(公告)日：2022-04-14
申请号：US17559656
申请日：2021-12-22
发明人： Daniel FUHRMANN , Gregor KELLER , Clemens WAECHTER
IPC分类号： H01L29/15 , H01L29/06 , H01L29/205 , H01L29/861
摘要： A stacked high barrier III-V power semiconductor diode having an at least regionally formed first metallic terminal contact layer and a heavily doped semiconductor contact region of a first conductivity type with a first lattice constant, a drift layer of a second conductivity type, a heavily doped metamorphic buffer layer sequence of the second conductivity type is formed. The metamorphic buffer layer sequence has an upper side with the first lattice constant and a lower side with a second lattice constant. The first lattice constant is greater than the second lattice constant. The upper side of the metamorphic buffer layer sequence is arranged in the direction of the drift layer. A second metallic terminal contact layer is arranged below the lower side of the metamorphic buffer layer sequence. The second metallic terminal contact layer is integrally bonded with a semiconductor contact layer.
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公开(公告)号：US20220077342A1
公开(公告)日：2022-03-10
申请号：US17468367
申请日：2021-09-07
发明人： Matthias MEUSEL , Alexander BERG , Wolfgang GUTER
IPC分类号： H01L31/05 , H01L31/054 , H01L31/043
摘要： A stacked monolithic multi-junction solar cell having at least four subcells, wherein the band gap increases starting from the first subcell in the direction of the fourth subcell, each subcell has an n-doped emitter and a p-doped base, the emitter and the base of the first subcell each have germanium or consist of germanium, all following subcells each have at least one element of main group III and V of the periodic table, a tunnel diode with a p-n junction is placed between each two subcells, all subcells following the first subcell are formed lattice-matched to one another, a semiconductor mirror having a plurality of doped semiconductor layers with alternately different refractive indices is placed between the first and second subcell, and the semiconductor mirror is placed between the first subcell and the first tunnel diode.
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