公开(公告)号：US20240347373A1

公开(公告)日：2024-10-17

申请号：US18636304

申请日：2024-04-16

申请人： STATS ChipPAC Pte. Ltd.

发明人： JongChan PARK ,  YoungMin KIM ,  GilHo LEE ,  HyeongKwan KIM ,  TaeKeun LEE

IPC分类号： H01L21/687 ,  H01L21/68

CPC分类号： H01L21/68785 ,  H01L21/68

摘要： A device for holding a package substrate is provided. The device comprises: a lower jig comprising a base material, and magnets embedded within the base material; and an upper jig comprising a frame and a grid pattern inside the frame, wherein the frame has a skirt portion that defines a gap between the lower jig and the grid pattern to accommodate the package substrate, and wherein the grid pattern is attractable by the magnets such that when the upper jig is placed on the lower jig to accommodate the package substrate the grid pattern is in contact with the package substrate to apply a pressure to the package substrate due to a magnetic interaction between the magnets and the grid pattern.

公开(公告)号：US20240343055A1

公开(公告)日：2024-10-17

申请号：US18619148

申请日：2024-03-27

申请人： STATS ChipPAC Pte. Ltd.

发明人： HyunSeok PARK ,  KyoWang KOO ,  SeongKuk KIM ,  SeokBeom HEO

IPC分类号： B41N1/24 ,  B23K1/00 ,  B23K1/20 ,  B23K101/40 ,  B41C1/14 ,  B41M1/12 ,  B41M1/26 ,  G03F7/00 ,  H01L23/00

CPC分类号： B41N1/248 ,  B23K1/0016 ,  B23K1/203 ,  B41C1/148 ,  B41M1/12 ,  B41M1/26 ,  G03F7/0035 ,  H01L24/11 ,  H01L24/81 ,  B23K2101/40 ,  H01L2224/1147 ,  H01L2224/81815

摘要： A selective stencil mask and a stencil printing method are provided. The stencil mask is for printing a fluid material onto a substrate, and comprises: a stencil member comprising: at least one printing region each having an array of apertures that allow the fluid material to flow therethrough and deposit onto the substrate; and a blocking region configured to prevent the fluid material from flowing therethrough; and a supporting member attached to the stencil member and configured to, when the stencil mask is placed on the substrate, contact the substrate and create a gap between the stencil member and the substrate.

公开(公告)号：US20240332209A1

公开(公告)日：2024-10-03

申请号：US18603185

申请日：2024-03-12

申请人： STATS ChipPAC Pte. Ltd.

发明人： JiSik MOON ,  KyoWang KOO ,  HyunSeok PARK

IPC分类号： H01L23/552 ,  H01L21/683 ,  H01L21/78 ,  H01L23/31 ,  H01L23/498 ,  H01L25/16

CPC分类号： H01L23/552 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/3107 ,  H01L23/49816 ,  H01L25/16

摘要： A method for forming a shielding layer to a semiconductor device, wherein the semiconductor device comprises a substrate, one or more electronic components on a front surface of the substrate, an encapsulant layer on the front surface of the substrate that covers the one or more electronic components and one or more connectors on a back surface of the substrate, the method comprising: applying a coating layer onto the back surface of the substrate to cover the one or more connectors; attaching the coating layer onto a tape to load the semiconductor device to the tape, wherein the attachment between the coating layer and the tape is stronger than the attachment between the coating layer and the back surface of the substrate as well as the one or more connectors; forming the shielding layer onto the encapsulant layer to cover the one or more electronic components; and unloading the semiconductor device from the tape, wherein the coating layer is left on the tape.

公开(公告)号：US20240332207A1

公开(公告)日：2024-10-03

申请号：US18193894

申请日：2023-03-31

申请人： STATS ChipPAC Pte. Ltd.

发明人： ChangOh Kim ,  JinHee Jung

IPC分类号： H01L23/552 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L23/498

CPC分类号： H01L23/552 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/565 ,  H01L23/3128 ,  H01L23/49822

摘要： A semiconductor device has a substrate and an electrical component disposed over the substrate. An encapsulant is deposited over the electrical component and substrate. A magnetic film material is formed over the encapsulant. The magnetic film material may extend down a side surface of the semiconductor device. The magnetic film material is subject to laser spike annealing in a magnetic field. A shielding layer is formed over the magnetic film material. The laser spike annealing of the magnetic film material in the magnetic field can be done after forming the shielding layer. The shielding layer may extend down a side surface of the semiconductor device. A first magnet is disposed on a first side of the semiconductor device. A second magnet is disposed on a second side of the semiconductor device opposite the first side of the semiconductor device.

公开(公告)号：US20240332151A1

公开(公告)日：2024-10-03

申请号：US18605841

申请日：2024-03-15

申请人： STATS ChipPAC Pte. Ltd.

发明人： JinHee JUNG ,  ChangOh KIM

IPC分类号： H01L23/498 ,  H01L21/32 ,  H01L21/48 ,  H01L23/00 ,  H01L23/552 ,  H01L25/065

CPC分类号： H01L23/49822 ,  H01L21/32 ,  H01L21/486 ,  H01L23/49816 ,  H01L23/552 ,  H01L24/05 ,  H01L24/29 ,  H01L25/0652 ,  H01L2224/05005 ,  H01L2224/05025 ,  H01L2224/29005 ,  H01L2224/29021 ,  H01L2924/0665 ,  H01L2924/15311 ,  H01L2924/18161 ,  H01L2924/182 ,  H01L2924/3025

摘要： An integrated package and a method for making the same are provided. The integrated package may include: a substate; a first electronic component mounted on the substrate; a first dielectric layer formed on the substrate and covering the first electric component, wherein the dielectric layer is made of photo imageable dielectric material; a first redistribution layer formed in the first dielectric layer, wherein the first redistribution layer includes a first vertical portion running through the first dielectric layer and a first lateral portion formed on a top surface of the first dielectric layer; a second electronic component mounted above the first dielectric layer and coupled with the lateral portion of the first redistribution layer; and a second dielectric layer formed above the first dielectric layer and covering the second electronic component.

公开(公告)号：US12107028B2

公开(公告)日：2024-10-01

申请号：US18305913

申请日：2023-04-24

申请人： STATS ChipPAC Pte. Ltd.

发明人： KyungOe Kim ,  Wagno Alves Braganca, Jr. ,  DongSam Park

IPC分类号： H01L23/367 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498

CPC分类号： H01L23/367 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/4871 ,  H01L21/565 ,  H01L23/3185 ,  H01L23/49816 ,  H01L23/49822 ,  H01L24/16 ,  H01L2224/16227 ,  H01L2924/15311 ,  H01L2924/18161

摘要： A semiconductor device has a heat spreader with an opening formed through the heat spreader. The heat spreader is disposed over a substrate with a semiconductor die disposed on the substrate in the opening. A thermally conductive material, e.g., adhesive or an elastomer plug, is disposed in the opening between the heat spreader and semiconductor die. A conductive layer is formed over the substrate, heat spreader, and thermally conductive material.

公开(公告)号：US20240321768A1

公开(公告)日：2024-09-26

申请号：US18188720

申请日：2023-03-23

申请人： STATS ChipPAC Pte. Ltd.

发明人： YongMoo Shin ,  HeeSoo Lee ,  HeeYoun Kim

IPC分类号： H01L23/552 ,  H01L21/56 ,  H01L23/00 ,  H01L23/29 ,  H01L23/66

CPC分类号： H01L23/552 ,  H01L21/565 ,  H01L23/29 ,  H01L23/66 ,  H01L24/16 ,  H01L2223/6661 ,  H01L2224/16227 ,  H01L2924/186 ,  H01L2924/3025

摘要： A semiconductor device has a substrate and an electrical component disposed over the substrate. A first encapsulant is deposited over the electrical component and substrate. A first shielding layer with a graphene core shell is formed on a surface of the first encapsulant. A second encapsulant is deposited over the first encapsulant and first shielding layer. A second shielding layer is formed over the second encapsulant. The first shielding layer is formed at least partially in an opening of the first encapsulant. The graphene core shell has a copper core. The first shielding layer has a plurality of cores covered by graphene and the graphene is interconnected within the first shielding layer to form an electrical path. The electrical path dissipates any charge incident on shielding layer, such as an ESD event, to reduce or inhibit the effects of EMI, RFI, and other inter-device interference.

公开(公告)号：US20240258246A1

公开(公告)日：2024-08-01

申请号：US18635819

申请日：2024-04-15

申请人： STATS ChipPAC Pte. Ltd.

发明人： YongKook Shin ,  KyoWang Koo ,  HeeYoun Kim ,  SeongKuk Kim

IPC分类号： H01L23/552 ,  H01L21/48 ,  H01L21/50 ,  H01L23/31

CPC分类号： H01L23/552 ,  H01L21/4871 ,  H01L21/50 ,  H01L23/3121

摘要： A semiconductor device has a substrate and first and second electrical component disposed over the substrate. A first metal bar is disposed over the substrate between the first electrical component and second electrical component. The first metal bar is formed by disposing a mask over a carrier. An opening is formed in the mask and a metal layer is sputtered over the mask. The mask is removed to leave the metal layer within the opening as the first metal bar. The first metal bar can be stored in a tape-and-reel.

公开(公告)号：US20240250062A1

公开(公告)日：2024-07-25

申请号：US18414500

申请日：2024-01-17

申请人： STATS ChipPAC Pte. Ltd.

发明人： JinHee JUNG ,  ChangOh KIM ,  HeeSoo LEE

IPC分类号： H01L23/00 ,  H01L21/56 ,  H01L23/29 ,  H01L23/31 ,  H01L25/00 ,  H01L25/065

CPC分类号： H01L24/82 ,  H01L21/561 ,  H01L24/24 ,  H01L25/0655 ,  H01L25/50 ,  H01L21/568 ,  H01L23/295 ,  H01L23/3185 ,  H01L2224/24137 ,  H01L2224/245 ,  H01L2224/82005 ,  H01L2224/82103 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079

摘要： A method for making a semiconductor device is provided. The method includes: providing a semiconductor assembly comprising a first semiconductor die and a second semiconductor die, wherein a first interconnection structure is electrically coupled to the first semiconductor die and a second interconnection structure is electrically coupled to the second semiconductor die; depositing an encapsulant layer over the semiconductor assembly to encapsulate the first interconnection structure and the second interconnection structure, wherein the encapsulant layer comprises an additive activatable by laser; forming an interconnection channel in the encapsulant layer and activating the additive of the encapsulant layer in the interconnection channel as a seed layer by laser patterning, wherein the interconnection channel exposes and interconnects the first and the second interconnection structures; forming a conductive layer in the interconnection channel of the encapsulant layer; and forming an outer layer on the encapsulant layer to cover the conductive layer.

公开(公告)号：US20240234291A1

公开(公告)日：2024-07-11

申请号：US18150567

申请日：2023-01-05

申请人： STATS ChipPAC Pte. Ltd.

发明人： YongMoo Shin ,  HyunSeok Park ,  KyoWang Koo ,  Sinjae Kim

IPC分类号： H01L23/498 ,  H01L21/48 ,  H01L25/16

CPC分类号： H01L23/49877 ,  H01L21/4857 ,  H01L23/49822 ,  H01L23/49894 ,  H01L25/16 ,  H01L24/16

摘要： A semiconductor device has a one-layer interconnect substrate and electrical component disposed over a first surface of the interconnect substrate. The electrical components can be discrete electrical devices, IPDs, semiconductor die, semiconductor packages, surface mount devices, and RF components. An RDL with a graphene core shell is formed over a second surface of the interconnect substrate. The graphene core shell has a copper core and a graphene coating formed over the copper core. The RDL further has a matrix to embed the graphene core shell. The graphene core shells through RDL form an electrical path. The RDL can be thermoset material or polymer or composite epoxy type matrix. The graphene core shell is embedded within the thermoset material or polymer or composite epoxy type matrix. The RDL with graphene core shell is useful for electrical conductivity and electrical interconnect within an SIP.