公开(公告)号：US20150156829A1

公开(公告)日：2015-06-04

申请号：US14539082

申请日：2014-11-12

申请人： Shui-Mu Lin ,  Chien-Hua Lin ,  Ching-Yu Chen ,  Chin-Hui Wang ,  Yung-Chun Chuang ,  Ti-Ti Liu

发明人： Shui-Mu Lin ,  Chien-Hua Lin ,  Ching-Yu Chen ,  Chin-Hui Wang ,  Yung-Chun Chuang ,  Ti-Ti Liu

IPC分类号： H05B33/08

CPC分类号： H05B33/083 ,  G09G3/3216 ,  G09G2320/0209 ,  G09G2320/0233 ,  H05B33/0827

摘要： The present invention discloses a light emitting device array billboard and a control method thereof. The light emitting device array billboard includes a light emitting device array circuit, plural line switch circuits, plural channel switch circuits, plural ghost image compensation switch circuits, and a control circuit. The control circuit operates the line switch circuits and the channel switch circuit to turn ON a selected light emitting device for a duty period in a lighting period, and operates the plural ghost image compensation switch circuits to electrically connect a channel node corresponding to the selected light emitting device to a ghost image compensation voltage after the lighting period. The control circuit further adjusts a channel operation signal according to a gray scale compensation signal, to turn ON the selected light emitting device for a gray scale compensation period in addition to the duty period.

摘要翻译： 本发明公开了一种发光装置阵列广告牌及其控制方法。 发光器件阵列广告牌包括发光器件阵列电路，多个线路开关电路，多个通道开关电路，多个重影图像补偿开关电路和控制电路。 控制电路操作线路开关电路和通道开关电路，以在点亮周期内接通所选择的发光器件占空比，并且操作多个重影图像补偿开关电路以电连接对应于所选择的光的通道节点 发光装置在发光周期之后的重影图像补偿电压。 控制电路根据灰度补偿信号进一步调整通道操作信号，除了占空比周期之外，还使所选择的发光器件接通灰度补偿期间。

公开(公告)号：US20150154904A1

公开(公告)日：2015-06-04

申请号：US14555631

申请日：2014-11-27

申请人： Chien-Hua Lin ,  Shui-Mu Lin ,  Ti-Ti Liu ,  Ching-Yu Chen ,  Yung-Chun Chuang ,  Chin-Hui Wang ,  Shei-Chie Yang

发明人： Chien-Hua Lin ,  Shui-Mu Lin ,  Ti-Ti Liu ,  Ching-Yu Chen ,  Yung-Chun Chuang ,  Chin-Hui Wang ,  Shei-Chie Yang

IPC分类号： G09G3/32 ,  H05B37/02

CPC分类号： H05B37/0281 ,  G09G3/2081 ,  G09G3/3216 ,  G09G3/3283 ,  G09G2320/064 ,  H05B33/086

摘要： The present invention discloses a light emitting device control circuit and a control method thereof, for controlling a light emitting device array display. The present invention controls not only the conduction timing and duration of one or more selected light emitting devices in the light emitting device array display, but also controls the current flowing through the selected light emitting devices by a variable current source, such that in one frame of a given length, the resolution of the brightness of the light emitting devices is increased.

摘要翻译： 本发明公开了一种用于控制发光器件阵列显示器的发光器件控制电路及其控制方法。 本发明不仅控制发光器件阵列显示器中的一个或多个选择的发光器件的导通定时和持续时间，还控制通过可变电流源流过所选择的发光器件的电流，使得在一个帧 给定长度，发光器件的亮度分辨率提高。

公开(公告)号：US20140077153A1

公开(公告)日：2014-03-20

申请号：US13616345

申请日：2012-09-14

申请人： Zhen-Yu Li ,  Tzu-Te Yang ,  Hon-Way Lin ,  Chung-Pao Lin ,  Kuan-Chun Chen ,  Ching-Yu Chen ,  You-Da Lin ,  Hao-Chung Kuo

发明人： Zhen-Yu Li ,  Tzu-Te Yang ,  Hon-Way Lin ,  Chung-Pao Lin ,  Kuan-Chun Chen ,  Ching-Yu Chen ,  You-Da Lin ,  Hao-Chung Kuo

IPC分类号： H01L33/32

CPC分类号： H01S5/2013 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/14 ,  H01L33/145 ,  H01L33/30 ,  H01L33/305 ,  H01L33/32 ,  H01S5/2009 ,  H01S5/3063 ,  H01S5/34333

摘要： The present disclosure involves a light-emitting device. The light-emitting device includes an n-doped gallium nitride (n-GaN) layer located over a substrate. A multiple quantum well (MQW) layer is located over the n-GaN layer. An electron-blocking layer is located over the MQW layer. A p-doped gallium nitride (p-GaN) layer is located over the electron-blocking layer. The light-emitting device includes a hole injection layer. In some embodiments, the hole injection layer includes a p-doped indium gallium nitride (p-InGaN) layer that is located in one of the three following locations: between the MQW layer and the electron-blocking layer; between the electron-blocking layer and the p-GaN layer; and inside the p-GaN layer.

摘要翻译： 本发明涉及一种发光装置。 发光器件包括位于衬底上方的n掺杂氮化镓（n-GaN）层。 多量子阱（MQW）层位于n-GaN层上。 电子阻挡层位于MQW层上。 p型掺杂氮化镓（p-GaN）层位于电子阻挡层上方。 发光装置包括空穴注入层。 在一些实施例中，空穴注入层包括位于以下三个位置之一的p掺杂的氮化铟镓（p-InGaN）层：在MQW层和电子阻挡层之间; 在电子阻挡层和p-GaN层之间; 并在p-GaN层内部。

公开(公告)号：US08225179B2

公开(公告)日：2012-07-17

申请号：US12210123

申请日：2008-09-12

申请人： Chiung-Ying Peng ,  Ching-Yu Chen

发明人： Chiung-Ying Peng ,  Ching-Yu Chen

IPC分类号： G11C29/00

CPC分类号： G11B20/1833 ,  H03M13/09

摘要： A method for generating error detection code is disclosed. Firstly, a first error detection code PEDC is derived by using 12-byte unknown sector data information including ID, IED, RSV and the 2048-byte main data while the main data is delivered from a host. Secondly, a second error detection code MEDC is obtained by using known 12-byte sector data information including ID, IED, RSV and the 2048-byte main data. Thereafter, the real error detection code EDC is obtained by applying an exclusive-OR operation to both the PEDC and MEDC.

摘要翻译： 公开了一种用于产生错误检测码的方法。 首先，通过使用包含ID，IED，RSV和2048字节主数据的12字节的未知扇区数据信息，从主机传送主数据，导出第一错误检测码PEDC。 其次，通过使用包括ID，IED，RSV和2048字节主数据的已知的12字节扇区数据信息来获得第二错误检测码MEDC。 此后，通过对PEDC和MEDC应用异或运算来获得错误检测码EDC。

公开(公告)号：US20110155061A1

公开(公告)日：2011-06-30

申请号：US12945903

申请日：2010-11-15

申请人： Wei-Kuo CHEN ,  Ching-Yu CHEN

发明人： Wei-Kuo CHEN ,  Ching-Yu CHEN

IPC分类号： H01L21/36

CPC分类号： C23C16/46 ,  C23C16/301 ,  C23C16/45504 ,  C23C16/4557 ,  C23C16/4583 ,  C23C16/4587 ,  C30B25/10 ,  H01L21/0237 ,  H01L21/02521 ,  H01L21/0254 ,  H01L21/0262

摘要： A reactor for film deposition having a first heating unit and the second heating units is described. The temperature of each heating unit is controlled individually by heating and/or cooling means. The first heating unit and the second heating unit are disposed face-to-face to each other to form a reaction region therein, and their inner sides are placed with an inclined angle. At least one substrate is disposed on the inner surface of the first heating unit. The temperature of the second heating unit can be adapted to a temperature higher than the temperature of the first heating unit to improve the thermal decomposition efficiency of input reactants so that a low-temperature film deposition can be accomplished.

摘要翻译： 描述了具有第一加热单元和第二加热单元的用于成膜沉积的反应器。 每个加热单元的温度由加热和/或冷却装置单独控制。 第一加热单元和第二加热单元彼此面对地设置以在其中形成反应区域，并且其内侧以倾斜角度放置。 至少一个基板设置在第一加热单元的内表面上。 第二加热单元的温度可以适应于高于第一加热单元的温度的温度，以提高输入反应物的热分解效率，从而可以实现低温膜沉积。

公开(公告)号：US07560338B2

公开(公告)日：2009-07-14

申请号：US11747230

申请日：2007-05-11

申请人： Hsiu-Han Liao ,  Chi-Hung Chao ,  Ching-Yu Chen

发明人： Hsiu-Han Liao ,  Chi-Hung Chao ,  Ching-Yu Chen

IPC分类号： H01L21/00

CPC分类号： H01L29/7923 ,  H01L27/115 ,  H01L27/11568 ,  H01L29/66833

摘要： A nonvolatile memory consisting of a substrate, a dielectric layer, word lines, word gates, conductive spacers, electron trapping layer, insulation layer and buried bit lines is provided. The dielectric layer is on the substrate and has several poly trenches thereon, and the word lines are disposed over the substrate across the poly trenches. The word gates are in the poly trenches between the word lines and the substrate, and the conductive spacers are between the word gates and the inner wall of each poly trench. The electron trapping layer is disposed between the conductive spacers and the inner wall of each poly trench and between the conductive spacers and the substrate. The insulation layer is between the conductive spacers and the word gates. The buried bit lines are in the substrate between the poly trenches.

摘要翻译： 提供了由基板，电介质层，字线，字栅，导电间隔物，电子俘获层，绝缘层和掩埋位线组成的非易失性存储器。 电介质层在衬底上并且在其上具有多个多沟槽，并且字线被布置在穿过多沟槽的衬底上。 字门位于字线和衬底之间的多沟槽中，并且导电间隔物位于字栅和每个多沟槽的内壁之间。 电子捕获层设置在导电间隔物和每个多晶硅沟槽的内壁之间以及导电间隔物和衬底之间。 绝缘层位于导电间隔物和字门之间。 掩埋位线位于多沟槽之间的衬底中。

公开(公告)号：US20060214216A1

公开(公告)日：2006-09-28

申请号：US11161618

申请日：2005-08-10

申请人： Hsiu-Han Liao ,  Chi-Hung Chao ,  Ching-Yu Chen

发明人： Hsiu-Han Liao ,  Chi-Hung Chao ,  Ching-Yu Chen

IPC分类号： H01L29/788

CPC分类号： H01L29/7923 ,  H01L27/115 ,  H01L27/11568 ,  H01L29/66833

摘要： A nonvolatile memory consisting of a substrate, a dielectric layer, word lines, word gates, conductive spacers, electron trapping layer, insulation layer and buried bit lines is provided. The dielectric layer is on the substrate and has several poly trenches thereon, and the word lines are disposed over the substrate across the poly trenches. The word gates are in the poly trenches between the word lines and the substrate, and the conductive spacers are between the word gates and the inner wall of each poly trench. The electron trapping layer is disposed between the conductive spacers and the inner wall of each poly trench and between the conductive spacers and the substrate. The insulation layer is between the conductive spacers and the word gates. The buried bit lines are in the substrate between the poly trenches.

摘要翻译： 提供了由基板，电介质层，字线，字栅，导电间隔物，电子俘获层，绝缘层和掩埋位线组成的非易失性存储器。 电介质层在衬底上并且在其上具有多个多沟槽，并且字线被布置在穿过多沟槽的衬底上。 字门位于字线和衬底之间的多沟槽中，并且导电间隔物位于字栅和每个多沟槽的内壁之间。 电子捕获层设置在导电间隔物和每个多晶硅沟槽的内壁之间以及导电间隔物和衬底之间。 绝缘层位于导电间隔物和字门之间。 掩埋位线位于多沟槽之间的衬底中。

公开(公告)号：US20050050431A1

公开(公告)日：2005-03-03

申请号：US10924952

申请日：2004-08-25

申请人： Dao-Ning Guo ,  Ching-Yu Chen ,  Meng-Huang Chu ,  Pei-Jei Hu

发明人： Dao-Ning Guo ,  Ching-Yu Chen ,  Meng-Huang Chu ,  Pei-Jei Hu

IPC分类号： G11B20/18 ,  H03M13/00 ,  G11C29/00

CPC分类号： G11B20/1833 ,  G11B2020/1836

摘要： An apparatus and method for accessing data from a storage medium is disclosed. The apparatus fetches a data block from the storage medium via an accessing unit, and corrects an error of the data block by an error correction code (ECC) decoder according to an ECC of the data block. The apparatus also includes an error detection code (EDC) processor for calculating an EDC of each data sector of the data block, and a flag register for storing a flag associated with each data sector. The method includes re-fetching a data sector if the associated flag indicates the EDC of the data sector is incorrect; and bypassing a data sector if the associated flag indicates that the EDC of the data sector is correct, even though the ECC of the data block indicates that the data sector contains an error.

摘要翻译： 公开了一种从存储介质访问数据的装置和方法。 该装置经由访问单元从存储介质取出数据块，根据数据块的ECC，通过纠错码（ECC）解码器校正数据块的错误。 该装置还包括用于计算数据块的每个数据扇区的EDC的错误检测码（EDC）处理器，以及用于存储与每个数据扇区相关联的标志的标志寄存器。 该方法包括：如果相关联的标志指示数据扇区的EDC不正确，则重新读取数据扇区; 并且如果相关联的标志指示数据扇区的EDC正确，则绕过数据扇区，即使数据块的ECC指示数据扇区包含错误。

公开(公告)号：US5173318A

公开(公告)日：1992-12-22

申请号：US707143

申请日：1991-05-30

申请人： Sheng-I Leu ,  I-Chang Lin ,  Ching-Yu Chen ,  Chen-Shun Chen

发明人： Sheng-I Leu ,  I-Chang Lin ,  Ching-Yu Chen ,  Chen-Shun Chen

IPC分类号： C12H1/12 ,  C12H1/16

CPC分类号： C12H1/12 ,  C12H1/16

摘要： A method for aging a fermented product includes the steps of: (a) cooling the fermented product in a container; (b) introducing ozone in the cooled fermented product for oxidation; and (c) applying an ultrasonic vibration to the container to vibrate and heat the fermented product in step (b) for oxidizing the fermented product. An aging device for a fermented product includes: an aging tank for containing the fermented product, the aging tank having an inlet and an outlet for the fermented product; an ozone supplying unit having an inlet pipe and an outlet pipe which are connected to the aging tank; a cooling unit mounted to the aging tank; an ultrasonic vibration unit mounted to the aging tank; and a thermometer mounted on the aging tank to detect the temperature of the fermented product. A method for preparing a distilled liquor includes the steps of (a') distilling a fermented precursor; (b') chilling the distilled fermented precursor; and (c') aging the chilled fermented precursor by the aging method described above.

摘要翻译： 一种老化发酵产品的方法包括以下步骤：（a）将容器中的发酵产物冷却; （b）在冷却的发酵产物中引入臭氧进行氧化; 和（c）在所述容器中施加超声波振动以振动并加热步骤（b）中的用于氧化发酵产品的发酵产品。 用于发酵产品的老化装置包括：用于容纳发酵产品的老化罐，老化罐具有用于发酵产品的入口和出口; 臭氧供给单元，其具有与老化罐连接的入口管和出口管; 安装在老化罐上的冷却单元; 安装在老化罐上的超声波振动装置; 和安装在老化罐上的温度计，以检测发酵产品的温度。 制备蒸馏液的方法包括以下步骤：（a'）蒸发发酵的前体; （b'）冷却蒸馏的发酵前体; 和（c'）通过上述老化方法使冷冻的发酵前体老化。

公开(公告)号：US09107265B2

公开(公告)日：2015-08-11

申请号：US14539082

申请日：2014-11-12

申请人： Shui-Mu Lin ,  Chien-Hua Lin ,  Ching-Yu Chen ,  Chin-Hui Wang ,  Yung-Chun Chuang ,  Ti-Ti Liu

发明人： Shui-Mu Lin ,  Chien-Hua Lin ,  Ching-Yu Chen ,  Chin-Hui Wang ,  Yung-Chun Chuang ,  Ti-Ti Liu

IPC分类号： H05B37/02 ,  H05B33/08

CPC分类号： H05B33/083 ,  G09G3/3216 ,  G09G2320/0209 ,  G09G2320/0233 ,  H05B33/0827

摘要： The present invention discloses a light emitting device array billboard and a control method thereof. The light emitting device array billboard includes a light emitting device array circuit, plural line switch circuits, plural channel switch circuits, plural ghost image compensation switch circuits, and a control circuit. The control circuit operates the line switch circuits and the channel switch circuit to turn ON a selected light emitting device for a duty period in a lighting period, and operates the plural ghost image compensation switch circuits to electrically connect a channel node corresponding to the selected light emitting device to a ghost image compensation voltage after the lighting period. The control circuit further adjusts a channel operation signal according to a gray scale compensation signal, to turn ON the selected light emitting device for a gray scale compensation period in addition to the duty period.

摘要翻译： 本发明公开了一种发光装置阵列广告牌及其控制方法。 发光器件阵列广告牌包括发光器件阵列电路，多个线路开关电路，多个通道开关电路，多个重影图像补偿开关电路和控制电路。 控制电路操作线路开关电路和通道开关电路，以在点亮周期内接通所选择的发光器件占空比，并且操作多个重影图像补偿开关电路以电连接对应于所选择的光的通道节点 发光装置在发光周期之后的重影图像补偿电压。 控制电路根据灰度补偿信号进一步调整通道操作信号，除了占空比周期之外，还使所选择的发光器件接通灰度补偿期间。