公开(公告)号：US20140077153A1

公开(公告)日：2014-03-20

申请号：US13616345

申请日：2012-09-14

申请人： Zhen-Yu Li ,  Tzu-Te Yang ,  Hon-Way Lin ,  Chung-Pao Lin ,  Kuan-Chun Chen ,  Ching-Yu Chen ,  You-Da Lin ,  Hao-Chung Kuo

发明人： Zhen-Yu Li ,  Tzu-Te Yang ,  Hon-Way Lin ,  Chung-Pao Lin ,  Kuan-Chun Chen ,  Ching-Yu Chen ,  You-Da Lin ,  Hao-Chung Kuo

IPC分类号： H01L33/32

CPC分类号： H01S5/2013 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/14 ,  H01L33/145 ,  H01L33/30 ,  H01L33/305 ,  H01L33/32 ,  H01S5/2009 ,  H01S5/3063 ,  H01S5/34333

摘要： The present disclosure involves a light-emitting device. The light-emitting device includes an n-doped gallium nitride (n-GaN) layer located over a substrate. A multiple quantum well (MQW) layer is located over the n-GaN layer. An electron-blocking layer is located over the MQW layer. A p-doped gallium nitride (p-GaN) layer is located over the electron-blocking layer. The light-emitting device includes a hole injection layer. In some embodiments, the hole injection layer includes a p-doped indium gallium nitride (p-InGaN) layer that is located in one of the three following locations: between the MQW layer and the electron-blocking layer; between the electron-blocking layer and the p-GaN layer; and inside the p-GaN layer.

摘要翻译： 本发明涉及一种发光装置。 发光器件包括位于衬底上方的n掺杂氮化镓（n-GaN）层。 多量子阱（MQW）层位于n-GaN层上。 电子阻挡层位于MQW层上。 p型掺杂氮化镓（p-GaN）层位于电子阻挡层上方。 发光装置包括空穴注入层。 在一些实施例中，空穴注入层包括位于以下三个位置之一的p掺杂的氮化铟镓（p-InGaN）层：在MQW层和电子阻挡层之间; 在电子阻挡层和p-GaN层之间; 并在p-GaN层内部。

公开(公告)号：US20080246143A1

公开(公告)日：2008-10-09

申请号：US12136519

申请日：2008-06-10

申请人： Yan-Kuin Su ,  Kuan-Chun Chen ,  Chun-Liang Lin ,  Jin-Quan Huang ,  Shu-Kai Hu

发明人： Yan-Kuin Su ,  Kuan-Chun Chen ,  Chun-Liang Lin ,  Jin-Quan Huang ,  Shu-Kai Hu

IPC分类号： H01L23/36

CPC分类号： H01L33/641 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01S5/0226 ,  H01S5/02276 ,  H01S5/02469 ,  H01L2924/00014

摘要： An embedded metal heat sink for a semiconductor device is described. The embedded metal heat sink for a semiconductor device comprises a metal thin layer, a metal heat sink and two bonding pads. The metal thin layer including a first surface and a second surface on opposite sides, wherein at least one semiconductor device is embedded in the first surface of the metal thin layer, and the semiconductor device has two electrodes with different conductivity types. The metal heat sink is deposited on the second surface of the metal thin layer. The bonding pads are deposed on the first surface of the metal thin layer around the semiconductor device and are respectively corresponding to the electrodes, wherein the electrodes are electrically and respectively connected to the corresponding bonding pads by at least two wires, and the bonding pads are electrically connected to an outer circuit.

摘要翻译： 描述了一种用于半导体器件的嵌入式金属散热器。 用于半导体器件的嵌入式金属散热器包括金属薄层，金属散热器和两个接合焊盘。 所述金属薄层包括相对侧的第一表面和第二表面，其中至少一个半导体器件嵌入在所述金属薄层的第一表面中，并且所述半导体器件具有两个具有不同导电类型的电极。 金属散热器沉积在金属薄层的第二表面上。 接合焊盘被放置在半导体器件周围的金属薄层的第一表面上，并且分别对应于电极，其中电极通过至少两根电线电连接并分别连接到相应的焊盘，并且焊盘是 电连接到外部电路。

公开(公告)号：US20080090334A1

公开(公告)日：2008-04-17

申请号：US11840342

申请日：2007-08-17

申请人： Kuan-Chun Chen

发明人： Kuan-Chun Chen

IPC分类号： H01L21/00

CPC分类号： H01L33/642 ,  F21K9/00 ,  H01L25/0753 ,  H01L2224/48091 ,  H01L2924/19107 ,  H01L2933/0075 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor device is described. The method comprises: providing a mold; coating a glue on a surface of the mold; providing at least one semiconductor chip, wherein the semiconductor chip includes a first side and a second side on opposite sides, and the first side of the semiconductor chip is pressed into a portion of the glue to expose the second side of the semiconductor chip; forming an adhesive layer to cover the second side of the semiconductor chip and the exposed portion of the glue; forming a metal heat sink on the adhesive layer; removing the glue and the mold; disposing a circuit board on the exposed portion of the adhesive layer; providing wires to electrically connect the circuit board to the semiconductor chip; and forming an encapsulation layer to completely encapsulate the semiconductor chip, the wires and the exposed portion of the adhesive layer.

摘要翻译： 对半导体装置的制造方法进行说明。 该方法包括：提供模具; 在模具的表面上涂胶; 提供至少一个半导体芯片，其中所述半导体芯片包括在相对侧上的第一侧和第二侧，并且所述半导体芯片的第一侧被压入所述胶的一部分以暴露所述半导体芯片的第二侧; 形成粘合剂层以覆盖半导体芯片的第二侧和胶的露出部分; 在粘合剂层上形成金属散热器; 去除胶水和模具; 将电路板设置在所述粘合剂层的暴露部分上; 提供电线以将电路板电连接到半导体芯片; 并且形成封装层以完全封装半导体芯片，电线和粘合剂层的暴露部分。

公开(公告)号：US07387915B2

公开(公告)日：2008-06-17

申请号：US11470273

申请日：2006-09-06

申请人： Yan-Kuin Su ,  Kuan-Chun Chen ,  Chun-Liang Lin ,  Jin-Quan Huang ,  Shu-Kai Hu

发明人： Yan-Kuin Su ,  Kuan-Chun Chen ,  Chun-Liang Lin ,  Jin-Quan Huang ,  Shu-Kai Hu

IPC分类号： H01L21/00

CPC分类号： H01L33/0079 ,  H01L33/641 ,  H01S5/02256 ,  H01S5/02272 ,  H01S5/024 ,  H01S5/02476 ,  H01S5/4093

摘要： A method for manufacturing a heat sink of a semiconductor device is described. In the method, an adhesive tape is provided, wherein the adhesive tape includes a first surface and a second surface on opposite sides, and the first surface of the adhesive tape adheres to a surface of a temporary substrate. At least one semiconductor device is provided, wherein the semiconductor device includes a first side and a second side opposite to the first side, and the first side of the one semiconductor device is pressed and set into a portion of the second surface of the adhesive tape, and the second side of the one semiconductor device is exposed. A thin metal layer is formed on the second side of the semiconductor device and the exposed portion of the second surface of the adhesive tape. A metal heat sink is formed on the thin metal layer. Then, the adhesive tape and the temporary substrate are removed.

摘要翻译： 描述了制造半导体器件的散热器的方法。 在该方法中，提供了一种粘合带，其中胶带包括第一表面和相对侧上的第二表面，并且粘合带的第一表面粘附到临时基底的表面。 提供至少一个半导体器件，其中半导体器件包括与第一侧相对的第一侧和第二侧，并且一个半导体器件的第一侧被压入并设置在粘合带的第二表面的一部分中 并且暴露一个半导体器件的第二面。 在半导体器件的第二侧和胶带的第二表面的暴露部分上形成薄金属层。 在薄金属层上形成金属散热器。 然后，去除胶带和临时基板。

公开(公告)号：US20120149138A1

公开(公告)日：2012-06-14

申请号：US13031736

申请日：2011-02-22

申请人： Yan-Kuin Su ,  Kuan-Chun Chen ,  Chun-Liang Lin

发明人： Yan-Kuin Su ,  Kuan-Chun Chen ,  Chun-Liang Lin

IPC分类号： H01L33/48

CPC分类号： H01L23/36 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/92 ,  H01L24/97 ,  H01L33/48 ,  H01L33/641 ,  H01L2224/0401 ,  H01L2224/06181 ,  H01L2224/13016 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/16245 ,  H01L2224/81005 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/92125 ,  H01L2224/97 ,  H01L2924/12041 ,  H01L2924/1304 ,  H01L2924/14 ,  H01L2933/0075 ,  H01S5/024 ,  H01L2224/81

摘要： A method for manufacturing a heat dissipation bulk of a semiconductor device including the following steps is described. An electrically conductive layer is formed to cover a surface of a temporary substrate. At least one semiconductor chip is connected to the electrically conductive layer by at least one metal bump, wherein the at least one metal bump is located between the at least one semiconductor chip and the electrically conductive layer. A metal substrate is formed on the electrically conductive layer, wherein the metal substrate fills up a gap between the at least one semiconductor chip and the electrically conductive layer. The temporary substrate is removed.

摘要翻译： 对包括以下步骤的半导体装置的散热体的制造方法进行说明。 形成导电层以覆盖临时衬底的表面。 至少一个半导体芯片通过至少一个金属凸块连接到导电层，其中至少一个金属凸块位于至少一个半导体芯片和导电层之间。 金属基板形成在导电层上，其中金属基板填充至少一个半导体芯片和导电层之间的间隙。 移除临时衬底。

公开(公告)号：US07943430B2

公开(公告)日：2011-05-17

申请号：US12170482

申请日：2008-07-10

申请人： Kuan-Chun Chen

发明人： Kuan-Chun Chen

IPC分类号： H01L23/36 ,  H01L23/367

CPC分类号： H01L23/36 ,  H01L24/48 ,  H01L33/642 ,  H01L33/647 ,  H01L2224/32188 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device and a method for manufacturing the same are described. The semiconductor device comprises: a heat sink having at least one opening passing through the heat sink; at least one semiconductor chip disposed in the opening, wherein the semiconductor chip includes a first side and a second side on opposite sides; an electricity conducting thin film filling in a first depth portion of the opening, wherein the second side of the semiconductor chip is embedded in the electricity conducting thin film; a heat conducting thick film filling in a second depth portion of the opening, wherein the electricity conducting thin film is directly connected with the heat conducting thick film; at least one wire electrically connecting the semiconductor chip and an external circuit; and an encapsulant covering a portion of the heat sink, the semiconductor chip, the wire and an exposed portion of the electricity conducting thin film.

摘要翻译： 对半导体装置及其制造方法进行说明。 半导体器件包括：散热器，具有通过散热器的至少一个开口; 设置在所述开口中的至少一个半导体芯片，其中所述半导体芯片包括在相对侧上的第一侧和第二侧; 所述导电薄膜填充在所述开口的第一深度部分中，其中所述半导体芯片的第二侧嵌入所述导电薄膜中; 导电厚膜填充在开口的第二深度部分中，其中导电薄膜直接与导热厚膜连接; 电连接半导体芯片和外部电路的至少一根线; 以及覆盖散热器，半导体芯片，导线的一部分和导电薄膜的暴露部分的密封剂。

公开(公告)号：US20090026606A1

公开(公告)日：2009-01-29

申请号：US12170482

申请日：2008-07-10

申请人： Kuan-Chun Chen

发明人： Kuan-Chun Chen

IPC分类号： H01L23/36 ,  H01L21/58

CPC分类号： H01L23/36 ,  H01L24/48 ,  H01L33/642 ,  H01L33/647 ,  H01L2224/32188 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device and a method for manufacturing the same are described. The semiconductor device comprises: a heat sink having at least one opening passing through the heat sink; at least one semiconductor chip disposed in the opening, wherein the semiconductor chip includes a first side and a second side on opposite sides; an electricity conducting thin film filling in a first depth portion of the opening, wherein the second side of the semiconductor chip is embedded in the electricity conducting thin film; a heat conducting thick film filling in a second depth portion of the opening, wherein the electricity conducting thin film is directly connected with the heat conducting thick film; at least one wire electrically connecting the semiconductor chip and an external circuit; and an encapsulant covering a portion of the heat sink, the semiconductor chip, the wire and an exposed portion of the electricity conducting thin film.

摘要翻译： 对半导体装置及其制造方法进行说明。 半导体器件包括：散热器，具有通过散热器的至少一个开口; 设置在所述开口中的至少一个半导体芯片，其中所述半导体芯片包括在相对侧上的第一侧和第二侧; 所述导电薄膜填充在所述开口的第一深度部分中，其中所述半导体芯片的第二侧嵌入所述导电薄膜中; 导电厚膜填充在开口的第二深度部分中，其中导电薄膜直接与导热厚膜连接; 电连接半导体芯片和外部电路的至少一根线; 以及覆盖散热器，半导体芯片，导线的一部分和导电薄膜的暴露部分的密封剂。

公开(公告)号：US06247556B1

公开(公告)日：2001-06-19

申请号：US09406808

申请日：1999-09-28

申请人： Kuan-Chun Chen

发明人： Kuan-Chun Chen

IPC分类号： F16H2522

CPC分类号： F16H25/2204 ,  F16H57/0497 ,  Y10T74/19991

摘要： The present invention discloses screw bolt and nut with lubricant oil contained ball bush bearing. There is a deep oil storage hole formed in the nut parallel to axial direction of the bolt for storing the lubricant oil. An oil nipple or an oil packing is provided at one end of the deep oil storage hole for preventing leakage of the lubricant oil. A threaded oil dripping hole intersecting the deep oil storage hole with an oil containing member therein is formed in the nut thereby causing the lubricant oil to drip gradually into the spiral grooves and lubricate the rolling balls thereof. The oil containing member can be made of felt, wool, cotton (cloth or thread) or the like. Furthermore, an oil adjusting screw is provided with the oil dripping hole for controlling the flow rate of lubricant oil into the spiral grooves.

摘要翻译： 本发明公开了具有润滑油的滚珠轴承的螺栓和螺母。 在与螺栓的轴向平行的螺母中形成有用于储存润滑油的深油储存孔。 在深油储存孔的一端设有油嘴或油包装，用于防止润滑油泄漏。 在螺母中形成有与深油存储孔相交的带螺纹的油滴孔，其中，润滑油逐渐滴入螺旋槽并润滑其滚珠。 含油部件可以由毡，羊毛，棉（布或线）等制成。 此外，油调节螺钉设置有用于控制润滑油进入螺旋槽的流量的漏油孔。

公开(公告)号：US20120319149A1

公开(公告)日：2012-12-20

申请号：US13230917

申请日：2011-09-13

申请人： Yan-Kuin Su ,  Kuan-Chun Chen ,  Chun-Liang Lin

发明人： Yan-Kuin Su ,  Kuan-Chun Chen ,  Chun-Liang Lin

IPC分类号： H01L33/58 ,  H01L33/48

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/22

摘要： A light-emitting device structure and a method for manufacturing the same are described. The light-emitting device structure includes a substrate and an illuminant structure. The substrate has a top surface and a lower surface on opposite sides, and two inclined side surfaces on opposite sides. Two sides of each inclined side surface are respectively connected to the top surface and the lower surface. The illuminant structure is disposed on the top surface.

摘要翻译： 描述了一种发光器件结构及其制造方法。 发光装置结构包括基板和发光体结构。 基板在相对侧具有顶表面和下表面，在相对侧上具有两个倾斜侧表面。 每个倾斜侧表面的两侧分别连接到顶表面和下表面。 光源结构设置在顶面上。

公开(公告)号：US07723829B2

公开(公告)日：2010-05-25

申请号：US12136519

申请日：2008-06-10

申请人： Yan-Kuin Su ,  Kuan-Chun Chen ,  Chun-Liang Lin ,  Jin-Quan Huang ,  Shu-Kai Hu

发明人： Yan-Kuin Su ,  Kuan-Chun Chen ,  Chun-Liang Lin ,  Jin-Quan Huang ,  Shu-Kai Hu

IPC分类号： H01L23/495

CPC分类号： H01L33/641 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01S5/0226 ,  H01S5/02276 ,  H01S5/02469 ,  H01L2924/00014

摘要： An embedded metal heat sink for a semiconductor device is described. The embedded metal heat sink for a semiconductor device comprises a metal thin layer, a metal heat sink and two bonding pads. The metal thin layer including a first surface and a second surface on opposite sides, wherein at least one semiconductor device is embedded in the first surface of the metal thin layer, and the semiconductor device has two electrodes with different conductivity types. The metal heat sink is deposited on the second surface of the metal thin layer. The bonding pads are deposed on the first surface of the metal thin layer around the semiconductor device and are respectively corresponding to the electrodes, wherein the electrodes are electrically and respectively connected to the corresponding bonding pads by at least two wires, and the bonding pads are electrically connected to an outer circuit.

摘要翻译： 描述了一种用于半导体器件的嵌入式金属散热器。 用于半导体器件的嵌入式金属散热器包括金属薄层，金属散热器和两个接合焊盘。 所述金属薄层包括相对侧的第一表面和第二表面，其中至少一个半导体器件嵌入在所述金属薄层的第一表面中，并且所述半导体器件具有两个具有不同导电类型的电极。 金属散热器沉积在金属薄层的第二表面上。 接合焊盘被放置在半导体器件周围的金属薄层的第一表面上，并且分别对应于电极，其中电极通过至少两根电线电连接并分别连接到相应的焊盘，并且焊盘是 电连接到外部电路。