Localized plasma processing
    2.
    发明授权
    Localized plasma processing 有权
    局部等离子体处理

    公开(公告)号:US08530006B2

    公开(公告)日:2013-09-10

    申请号:US12877002

    申请日:2010-09-07

    摘要: A method of localized plasma processing improves processing speed and reduces work piece damage compared to charged particle beam deposition and etching. In one embodiment, a plasma jet exits a plasma generating chamber and activates a reactive gas. A jet of plasma and reactive gas impacts and processes the work piece. Because the plasma and the ions in the reactive gas can have low kinetic energy, there can be little or no surface damage. This is particularly useful for deposition processes. When it is desired to etch material, the reactive ions can be more energetic to enhance etching.

    摘要翻译: 与带电粒子束沉积和蚀刻相比,局部等离子体处理的方法提高了处理速度并减少了工件损伤。 在一个实施例中,等离子体射流离开等离子体产生室并激活反应气体。 等离子体和反应气体射流冲击和处理工件。 因为反应气体中的等离子体和离子可以具有低的动能,所以可能很少或没有表面损伤。 这对于沉积工艺特别有用。 当需要蚀刻材料时,反应离子可以更有活力以增强蚀刻。

    Localized Plasma Processing
    4.
    发明申请
    Localized Plasma Processing 有权
    本地等离子体处理

    公开(公告)号:US20110117748A1

    公开(公告)日:2011-05-19

    申请号:US12877002

    申请日:2010-09-07

    IPC分类号: H01L21/3065

    摘要: A method of localized plasma processing improves processing speed and reduces work piece damage compared to charged particle beam deposition and etching. In one embodiment, a plasma jet exits a plasma generating chamber and activates a reactive gas. A jet of plasma and reactive gas impacts and processes the work piece. Because the plasma and the ions in the reactive gas can have low kinetic energy, there can be little or no surface damage. This is particularly useful for deposition processes. When it is desired to etch material, the reactive ions can be more energetic to enhance etching.

    摘要翻译: 与带电粒子束沉积和蚀刻相比,局部等离子体处理的方法提高了处理速度并减少了工件损伤。 在一个实施例中,等离子体射流离开等离子体产生室并激活反应气体。 等离子体和反应气体射流冲击和处理工件。 因为反应气体中的等离子体和离子可以具有低的动能,所以可能很少或没有表面损伤。 这对于沉积工艺特别有用。 当需要蚀刻材料时,反应离子可以更有活力以增强蚀刻。