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    Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region
    3.
    发明授权
    Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region 有权
    在电介质区域上形成掩模层，以便在由电介质区域分隔的导电区域上形成覆盖层

    公开(公告)号：US08343866B2

    公开(公告)日：2013-01-01

    申请号：US13251952

    申请日：2011-10-03

    申请人： David E. Lazovsky ,  Sandra G. Malhotra ,  Thomas R. Boussie

    发明人： David E. Lazovsky ,  Sandra G. Malhotra ,  Thomas R. Boussie

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76829 ,  B82Y30/00 ,  H01L21/02183 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/31695 ,  H01L21/3185 ,  H01L21/76826 ,  H01L21/76849

    摘要： A masking layer is formed on a dielectric region of an electronic device so that, during subsequent formation of a capping layer on electrically conductive regions the masking layer inhibits formation of capping layer material on the dielectric region. The capping layer can be formed selectively on the electrically conductive regions or non-selectively; in either case, capping layer material formed over the dielectric region can subsequently be removed, thus ensuring that capping layer material is formed only on the electrically conductive regions. Silane-based materials, such as silane-based SAMs, can be used to form the masking layer. The capping layer can be formed of an electrically conductive, a semiconductor material, or an electrically insulative material, and can be formed using any appropriate process, including conventional deposition processes such as electroless deposition, chemical vapor deposition, physical vapor deposition or atomic layer deposition.

    摘要翻译： 在电子器件的电介质区域上形成掩模层，使得在导电区域之后形成覆盖层时，掩模层阻止在电介质区域上形成覆盖层材料。 可以选择性地在导电区域或非选择性地形成覆盖层; 在任一种情况下，形成在电介质区域上的覆盖层材料随后可以被去除，从而确保覆盖层材料仅在导电区域上形成。 可以使用诸如硅烷基SAM之类的硅烷基材料来形成掩模层。 覆盖层可以由导电，半导体材料或电绝缘材料形成，并且可以使用任何适当的工艺形成，包括常规沉积工艺，例如无电沉积，化学气相沉积，物理气相沉积或原子层沉积 。

    Molecular Self-Assembly In Substrate Processing
    4.
    发明申请
    Molecular Self-Assembly In Substrate Processing 有权
    分子自组装衬底加工

    公开(公告)号：US20110163424A1

    公开(公告)日：2011-07-07

    申请号：US13045298

    申请日：2011-03-10

    申请人： David E. Lazovsky ,  Tony P. Chiang ,  Majid Keshavarz

    发明人： David E. Lazovsky ,  Tony P. Chiang ,  Majid Keshavarz

    IPC分类号： H01L29/06 ,  H01L21/312

    CPC分类号： H01L23/5329 ,  B82Y30/00 ,  H01L21/31 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76873 ,  H01L21/76879 ,  H01L28/65 ,  H01L29/06 ,  H01L2924/0002 ,  Y10T428/249953 ,  H01L2924/00

    摘要： Methods for sealing a porous dielectric are presented including: receiving a substrate, the substrate including the porous dielectric; exposing the substrate to an organosilane, where the organosilane includes a hydrolysable group for facilitating attachment with the porous dielectric, and where the organosilane does not include an alkyl group; and forming a layer as a result of the exposing to seal the porous dielectric. In some embodiments, methods are presented where the organosilane includes: alkynyl groups, aryl groups, fluoroalkyl groups, heteroaryl groups, alcohol groups, thiol groups, amine groups, thiocarbamate groups, ester groups, ether groups, sulfide groups, and nitrile groups. In some embodiments, method further include: removing contamination from the porous dielectric and a conductive region of the substrate prior to the exposing; and removing contamination from the conductive region after the forming.

    摘要翻译： 提供了密封多孔电介质的方法，包括：接收衬底，所述衬底包括多孔电介质; 将基板暴露于有机硅烷中，其中有机硅烷包括用于促进与多孔电介质附着的可水解基团，并且其中有机硅烷不包括烷基; 并且由于暴露而形成层以密封多孔电介质。 在一些实施方案中，存在方法，其中有机硅烷包括：炔基，芳基，氟代烷基，杂芳基，醇基，硫醇基，胺基，硫代氨基甲酸酯基，酯基，醚基，硫醚基和腈基。 在一些实施例中，方法还包括：在暴露之前从多孔电介质和衬底的导电区域去除污染物; 并且在成形之后从导电区域去除污染物。

    Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region
    5.
    发明授权
    Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region 有权
    在电介质区域上形成掩模层，以便在由电介质区域分隔的导电区域上形成覆盖层

    公开(公告)号：US07749881B2

    公开(公告)日：2010-07-06

    申请号：US11132841

    申请日：2005-05-18

    申请人： David E. Lazovsky ,  Sandra G. Malhotra ,  Thomas R. Boussie

    发明人： David E. Lazovsky ,  Sandra G. Malhotra ,  Thomas R. Boussie

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76829 ,  B82Y30/00 ,  H01L21/02183 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/31695 ,  H01L21/3185 ,  H01L21/76826 ,  H01L21/76849

    摘要： A masking layer is formed on a dielectric region of an electronic device so that, during subsequent formation of a capping layer on electrically conductive regions of the electronic device that are separated by the dielectric region, the masking layer inhibits formation of capping layer material on or in the dielectric region. The capping layer can be formed selectively on the electrically conductive regions or non-selectively; in either case (particularly in the latter), capping layer material formed over the dielectric region can subsequently be removed, thus ensuring that capping layer material is formed only on the electrically conductive regions. Silane-based materials, such as silane-based SAMs, can be used to form the masking layer. The capping layer can be formed of an electrically conductive material (e.g., a cobalt alloy, a nickel alloy, tungsten, tantalum, tantalum nitride), a semiconductor material, or an electrically insulative material, and can be formed using any appropriate process, including conventional deposition processes such as electroless deposition, chemical vapor deposition, physical vapor deposition or atomic layer deposition.

    摘要翻译： 在电子器件的电介质区域上形成掩模层，使得在随后在由电介质区域分离的电子器件的导电区域上形成覆盖层时，掩模层阻止在其上形成覆盖层材料 在电介质区域。 可以选择性地在导电区域或非选择性地形成覆盖层; 在任一情况下（特别是在后者中），可以随后去除在电介质区域上形成的覆盖层材料，从而确保覆盖层材料仅在导电区域上形成。 可以使用诸如硅烷基SAM之类的硅烷基材料来形成掩模层。 覆盖层可以由导电材料（例如，钴合金，镍合金，钨，钽，氮化钽），半导体材料或电绝缘材料形成，并且可以使用任何适当的工艺形成，包括 常规沉积工艺如无电沉积，化学气相沉积，物理气相沉积或原子层沉积。

    Processing substrates using site-isolated processing
    7.
    发明授权
    Processing substrates using site-isolated processing 有权
    使用现场隔离处理处理衬底

    公开(公告)号：US08882914B2

    公开(公告)日：2014-11-11

    申请号：US11418689

    申请日：2006-05-05

    申请人： Tony P. Chiang ,  David E. Lazovsky ,  Sandra G. Malhotra

    发明人： Tony P. Chiang ,  David E. Lazovsky ,  Sandra G. Malhotra

    IPC分类号： C23C16/00 ,  C23C14/00 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/677 ,  H01L21/67

    CPC分类号： H01L22/26 ,  H01L21/32051 ,  H01L21/67028 ,  H01L21/6708 ,  H01L21/67207 ,  H01L21/67745 ,  H01L21/76834 ,  H01L21/76841 ,  H01L21/76849 ,  H01L21/76871

    摘要： Substrate processing systems and methods are described for processing substrates having two or more regions. The processing includes one or more of molecular self-assembly and combinatorial processing. At least one of materials, processes, processing conditions, material application sequences, and process sequences is different for the processing in at least one region of the substrate relative to at least one other region of the substrate. Processing systems are described that include numerous processing modules. The modules include a site-isolated reactor (SIR) configured for one or more of molecular self-assembly and combinatorial processing of a substrate.

    摘要翻译： 描述了用于处理具有两个或更多个区域的基板的基板处理系统和方法。 该处理包括分子自组装和组合处理中的一种或多种。 材料，工艺，加工条件，材料应用顺序和工艺顺序中的至少一个不同于衬底相对于衬底的至少一个其它区域的至少一个区域中的处理。 描述了包括许多处理模块的处理系统。 模块包括配置用于衬底的分子自组装和组合处理中的一个或多个的位点隔离反应器（SIR）。

    Molecular self-assembly in substrate processing
    8.
    发明授权
    Molecular self-assembly in substrate processing 有权
    基板加工中的分子自组装

    公开(公告)号：US08586485B2

    公开(公告)日：2013-11-19

    申请号：US13074695

    申请日：2011-03-29

    申请人： David E. Lazovsky ,  Tony P. Chiang ,  Majid Keshavarz

    发明人： David E. Lazovsky ,  Tony P. Chiang ,  Majid Keshavarz

    IPC分类号： H01L21/31 ,  H01L21/44

    CPC分类号： H01L23/5329 ,  B82Y30/00 ,  H01L21/31 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76873 ,  H01L21/76879 ,  H01L28/65 ,  H01L29/06 ,  H01L2924/0002 ,  Y10T428/249953 ,  H01L2924/00

    摘要： Methods for sealing a porous dielectric are presented including: receiving a substrate, the substrate including the porous dielectric; exposing the substrate to an organosilane, where the organosilane includes a hydrolysable group for facilitating attachment with the porous dielectric, and where the organosilane does not include an alkyl group; and forming a layer as a result of the exposing to seal the porous dielectric. In some embodiments, methods are presented where the organosilane includes: alkynyl groups, aryl groups, flouroalkyl groups, heteroarlyl groups, alcohol groups, thiol groups, amine groups, thiocarbamate groups, ester groups, ether groups, sulfide groups, and nitrile groups. In some embodiments, method further include: removing contamination from the porous dielectric and a conductive region of the substrate prior to the exposing; and removing contamination from the conductive region after the forming.

    摘要翻译： 提供了密封多孔电介质的方法，包括：接收衬底，所述衬底包括多孔电介质; 将基板暴露于有机硅烷中，其中有机硅烷包括用于促进与多孔电介质附着的可水解基团，并且其中有机硅烷不包括烷基; 并且由于暴露而形成层以密封多孔电介质。 在一些实施方案中，存在方法，其中有机硅烷包括：炔基，芳基，氟烷基，杂芳基，醇基，硫醇基，胺基，硫代氨基甲酸酯基，酯基，醚基，硫醚基和腈基。 在一些实施例中，方法还包括：在暴露之前从多孔电介质和衬底的导电区域去除污染物; 并且在成形之后从导电区域去除污染物。

    Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region
    10.
    发明授权
    Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region 有权
    在电介质区域上形成掩模层，以便在由电介质区域分隔的导电区域上形成覆盖层

    公开(公告)号：US08030772B2

    公开(公告)日：2011-10-04

    申请号：US12124113

    申请日：2008-05-20

    申请人： David E. Lazovsky ,  Sandra G. Malhotra ,  Thomas R. Boussie

    发明人： David E. Lazovsky ,  Sandra G. Malhotra ,  Thomas R. Boussie

    IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

    CPC分类号： H01L21/7685 ,  B82Y30/00 ,  H01L21/02118 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02203 ,  H01L21/288 ,  H01L21/31 ,  H01L21/76834

    摘要： Devices are presented including: a substrate including a dielectric region and a conductive region; a molecular self-assembled layer selectively formed on the dielectric region; and a capping layer formed on the conductive region, where the capping layer is an electrically conductive material such as: an alloy of cobalt and boron material, an alloy of cobalt, tungsten, and phosphorous material, an alloy of nickel, molybdenum, and phosphorous. In some embodiments, devices are presented where the molecular self-assembled layer includes one or more of a polyelectrolyte, a dendrimer, a hyper-branched polymer, a polymer brush, a block co-polymer, and a silane-based material where the silane-based material includes one or more hydrolysable substituents of a general formula RnSiX4-n, where R is: an alkyl, a substituted alkyl, a fluoroalkyl, an aryl, a substituted aryl, and a fluoroaryl, and where X is: a halo, an alkoxy, an aryloxy, an amino, an octadecyltrichlorosilane, and an aminopropyltrimethoxysilane.

    摘要翻译： 本发明提供了包括：包括电介质区域和导电区域的衬底; 选择性地形成在电介质区域上的分子自组装层; 以及形成在导电区域上的覆盖层，其中覆盖层是导电材料，例如钴和硼材料的合金，钴，钨和磷材料的合金，镍，钼和磷的合金 。 在一些实施方案中，存在装置，其中分子自组装层包括聚电解质，树枝状聚合物，超支化聚合物，聚合物刷，嵌段共聚物和硅烷基材料中的一种或多种，​​其中硅烷 基团的材料包括一个或多个通式R n SiX 4-n的可水解取代基，其中R是：烷基，取代的烷基，氟代烷基，芳基，取代的芳基和氟代芳基，其中X是：卤素， 烷氧基，芳氧基，氨基，十八烷基三氯硅烷和氨基丙基三甲氧基硅烷。