公开(公告)号：US20110186815A1

公开(公告)日：2011-08-04

申请号：US13083990

申请日：2011-04-11

申请人： Soo Min LEE ,  Hee Seok Park ,  Jae Woong Han ,  Seong Suk Lee ,  Cheol Soo Sone

发明人： Soo Min LEE ,  Hee Seok Park ,  Jae Woong Han ,  Seong Suk Lee ,  Cheol Soo Sone

IPC分类号： H01L29/15

CPC分类号： H01L33/32 ,  B82Y10/00 ,  B82Y20/00 ,  H01L33/06

摘要： There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough.

摘要翻译： 提供了一种氮化物半导体器件，包括：n型氮化物半导体层; p型氮化物半导体层; 以及形成在所述n型和p型氮化物半导体层之间的有源层，所述有源层包括彼此交替沉积的多个量子阱层和至少一个量子势垒层，其中所述有源层包括第一量子阱 层，与第一量子阱层相邻形成朝向p型氮化物半导体层并且具有高于第一量子阱层的量子级的量子级的第二量子阱层，以及形成在第一量子阱层之间的隧穿量子势垒层 和第二量子阱层，并且具有能够使载体穿过其的厚度。

公开(公告)号：US20110042690A1

公开(公告)日：2011-02-24

申请号：US12608442

申请日：2009-10-29

申请人： Jin Bock LEE ,  Hee Seok Park ,  Hyung Kun Kim ,  Young Jin Lee

发明人： Jin Bock LEE ,  Hee Seok Park ,  Hyung Kun Kim ,  Young Jin Lee

IPC分类号： H01L33/00

CPC分类号： H01L33/483 ,  H01L24/48 ,  H01L24/73 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/05599

摘要： The present invention provides a light emitting diode package including: a package mold having a first cavity and a second cavity with a smaller size than that of the first cavity; first and second electrode pads provided on the bottom surfaces of the first cavity and the second cavity, respectively; an LED chip mounted on the first electrode pad; a wire for providing electrical connection between the LED chip and the second electrode pad; and a molding material filled within the first cavity and the second cavity.

摘要翻译： 本发明提供了一种发光二极管封装，其包括：封装模具，其具有第一空腔和具有比第一空腔小的尺寸的第二空腔; 分别设置在第一腔和第二腔的底表面上的第一和第二电极垫; 安装在所述第一电极焊盘上的LED芯片; 用于在所述LED芯片和所述第二电极焊盘之间提供电连接的导线; 以及填充在第一腔和第二腔内的成型材料。

公开(公告)号：US20070187702A1

公开(公告)日：2007-08-16

申请号：US11707062

申请日：2007-02-16

申请人： Tae Won Lee ,  Hee Seok Park ,  Masayoshi Koike

发明人： Tae Won Lee ,  Hee Seok Park ,  Masayoshi Koike

IPC分类号： H01L33/00 ,  H01L29/22

CPC分类号： H01L33/20

摘要： A facet extraction LED improved in light extraction efficiency and a manufacturing method thereof. A substrate is provided. A light emitting part includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer sequentially stacked on the substrate. A p-electrode and an n-electrode are connected to the p-type semiconductor layer and the n-type semiconductor layer, respectively. The p- and n-electrodes are formed on the same side of the LED. The light emitting part is structured as a ring.

摘要翻译： 提取光提取效率的小面提取LED及其制造方法。 提供基板。 发光部包括依次层叠在基板上的n型半导体层，有源层和p型半导体层。 p电极和n电极分别连接到p型半导体层和n型半导体层。 p电极和n电极形成在LED的同一侧。 发光部分被构造为环。

公开(公告)号：US20120294025A1

公开(公告)日：2012-11-22

申请号：US13475486

申请日：2012-05-18

申请人： Hee Dong KIM ,  Moo Youn PARK ,  Soo Hwan LEE ,  Hee Seok PARK

发明人： Hee Dong KIM ,  Moo Youn PARK ,  Soo Hwan LEE ,  Hee Seok PARK

IPC分类号： F21V13/04 ,  H01L33/60

CPC分类号： F21S48/1388 ,  F21S41/143 ,  F21S41/16 ,  F21S41/255 ,  F21S41/32 ,  F21S41/323 ,  F21S41/37 ,  H01L33/44 ,  H01L33/46 ,  H01L33/50 ,  H01L33/501 ,  H01L33/507 ,  H01L33/60 ,  H01L2933/0091

摘要： An LED assembly according to an embodiment of the present invention may improve dark regions generated between LED chips by employing a first reflective layer between the LED chips. By employing a transparent optical layer or an optical layer including a scattering particle between an LED chip and a phosphor layer, direct contact between the LED chip and the phosphor layer may be avoided, thereby preventing a low light extraction efficiency. Further, by employing a second reflection layer on side surfaces of an LED chip, an optical layer, and a phosphor layer, a relatively high contrast may be obtained. An LED assembly may enhance contrast through a reflective layer while increasing light extraction efficiency by including a scattering particle in a phosphor layer.

摘要翻译： 根据本发明的实施例的LED组件可以通过在LED芯片之间采用第一反射层来改善在LED芯片之间产生的暗区域。 通过在LED芯片和荧光体层之间采用透明光学层或包含散射粒子的光学层，可以避免LED芯片与荧光体层之间的直接接触，从而防止低的光提取效率。 此外，通过在LED芯片，光学层和荧光体层的侧表面上采用第二反射层，可以获得相对较高的对比度。 LED组件可以通过反射层增强对比度，同时通过在荧光体层中包括散射粒子来提高光提取效率。

公开(公告)号：US20100210051A1

公开(公告)日：2010-08-19

申请号：US12704570

申请日：2010-02-12

申请人： Tae Won Lee ,  Hee Seok Park ,  Masayoshi Koike

发明人： Tae Won Lee ,  Hee Seok Park ,  Masayoshi Koike

IPC分类号： H01L33/02 ,  H01L33/46

CPC分类号： H01L33/20

摘要： A facet extraction LED improved in light extraction efficiency and a manufacturing method thereof. A substrate is provided. A light emitting part includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer sequentially stacked on the substrate. A p-electrode and an n-electrode are connected to the p-type semiconductor layer and the n-type semiconductor layer, respectively. The p- and n-electrodes are formed on the same side of the LED. The light emitting part is structured as a ring.

摘要翻译： 提取光提取效率的小面提取LED及其制造方法。 提供基板。 发光部包括依次层叠在基板上的n型半导体层，有源层和p型半导体层。 p电极和n电极分别连接到p型半导体层和n型半导体层。 p电极和n电极形成在LED的同一侧。 发光部分被构造为环。

公开(公告)号：US20100090246A1

公开(公告)日：2010-04-15

申请号：US12328142

申请日：2008-12-04

申请人： Jin Bock LEE ,  Jin Hyun Lee ,  Hee Seok Park ,  Pun Jae Choi ,  Jong In Yang

发明人： Jin Bock LEE ,  Jin Hyun Lee ,  Hee Seok Park ,  Pun Jae Choi ,  Jong In Yang

IPC分类号： H01L33/00 ,  H01L21/18

CPC分类号： H01L33/62 ,  H01L21/268 ,  H01L33/40 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a vertical nitride-based LED including a first electrode; a first nitride semiconductor layer that is disposed on the first electrode; an active layer that is disposed on the first nitride semiconductor layer; a second nitride semiconductor layer that is disposed on the active layer; an ohmic contact pattern that is disposed on the second nitride semiconductor layer; a second electrode that is disposed on the ohmic contact pattern; and a bonding pad that is electrically connected to the second electrode and disposed on the second nitride semiconductor layer.

摘要翻译： 提供了包括第一电极的垂直氮化物基LED; 设置在所述第一电极上的第一氮化物半导体层; 设置在所述第一氮化物半导体层上的有源层; 设置在所述有源层上的第二氮化物半导体层; 设置在所述第二氮化物半导体层上的欧姆接触图案; 设置在所述欧姆接触图案上的第二电极; 以及与第二电极电连接并设置在第二氮化物半导体层上的接合焊盘。

公开(公告)号：US07691651B2

公开(公告)日：2010-04-06

申请号：US11448866

申请日：2006-06-08

申请人： Hee Seok Park

发明人： Hee Seok Park

IPC分类号： H01L21/00

CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/12

摘要： In a method for manufacturing a high-quality GaN-based semiconductor layer on a substrate of different material, an AlN nucleation layer is grown on a substrate, a GaN buffer layer is grown on the AlN nucleation layer, and the substrate annealed. The AlN nucleation layer is formed to have a thickness greater than a critical radius of a nucleus of AlN crystal and less than a critical resilient thickness of AlN, and the GaN buffer layer is formed to have a thickness greater than a critical radius of a nucleus of GaN crystal and less than a critical resilient thickness of GaN. Annealing time is greater than L2/DGa where L indicates a diffusion distance of Ga, and DGa indicates a diffusion coefficient of Ga in the AlN nucleation layer.

摘要翻译： 在用于在不同材料的衬底上制造高质量GaN基半导体层的方法中，在衬底上生长AlN成核层，在AlN成核层上生长GaN缓冲层，并且衬底退火。 AlN成核层形成为具有大于AlN晶体的核的临界半径的厚度并且小于AlN的临界弹性厚度，并且GaN缓冲层形成为具有大于核的临界半径的厚度 的GaN晶体并且小于GaN的临界弹性厚度。 退火时间大于L2 / DGa，其中L表示Ga的扩散距离，DGa表示AlN成核层中的Ga的扩散系数。

公开(公告)号：US07683385B2

公开(公告)日：2010-03-23

申请号：US11707062

申请日：2007-02-16

申请人： Tae Won Lee ,  Hee Seok Park ,  Masayoshi Koike

发明人： Tae Won Lee ,  Hee Seok Park ,  Masayoshi Koike

IPC分类号： H01L27/15 ,  H01L31/12 ,  H01L31/153 ,  H01L33/00

CPC分类号： H01L33/20

摘要： A facet extraction LED improved in light extraction efficiency and a manufacturing method thereof. A substrate is provided. A light emitting part includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer sequentially stacked on the substrate. A p-electrode and an n-electrode are connected to the p-type semiconductor layer and the n-type semiconductor layer, respectively. The p- and n-electrodes are formed on the same side of the LED. The light emitting part is structured as a ring.

摘要翻译： 提取光提取效率的小面提取LED及其制造方法。 提供基板。 发光部包括依次层叠在基板上的n型半导体层，有源层和p型半导体层。 p电极和n电极分别连接到p型半导体层和n型半导体层。 p电极和n电极形成在LED的同一侧。 发光部分被构造为环。

公开(公告)号：US20080087907A1

公开(公告)日：2008-04-17

申请号：US11898542

申请日：2007-09-13

申请人： Hee Seok Park ,  Gil Han Park ,  Sang Duk Yoo ,  Ki Tae Park ,  Myoung Sik Jung ,  Kyeong Ik Min

发明人： Hee Seok Park ,  Gil Han Park ,  Sang Duk Yoo ,  Ki Tae Park ,  Myoung Sik Jung ,  Kyeong Ik Min

IPC分类号： H01L33/00

CPC分类号： H01L33/56 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A light emitting diode package including: a package substrate having a mounting area and first and second wiring structures partially exposed in the mounting area; a light emitting diode having first and second electrodes, the light emitting diode mounted on the mounting area of the package substrate to allow the first and second electrodes to be connected to first and second bonding pads, respectively; a transparent cover mounted above the mounting area of the package substrate to hermetically seal a mounting space in which the light emitting diode is mounted; and a transparent electric insulation fluid filled in the mounting space of the hermetically sealed light emitting diode and having a refractive index smaller than a refractive index of a material forming the light emitting diode.

摘要翻译： 一种发光二极管封装，包括：具有安装区域的封装基板和在所述安装区域中部分地露出的第一和第二布线结构; 具有第一和第二电极的发光二极管，所述发光二极管分别安装在所述封装基板的安装区域上，以允许所述第一和第二电极分别连接到第一和第二焊盘; 透明盖，安装在封装基板的安装区域上方，以密封安装发光二极管的安装空间; 以及填充在所述密封发光二极管的安装空间中并且具有小于形成所述发光二极管的材料的折射率的折射率的透明电绝缘流体。

公开(公告)号：US20080035951A1

公开(公告)日：2008-02-14

申请号：US11822185

申请日：2007-07-03

申请人： Hee Seok Park ,  Gil Han Park ,  Sang Duk Yoo ,  Young Min Park ,  Hak Hwan Kim ,  Seon Young Myoung ,  Sang Bum Lee ,  Ki Tae Park ,  Myoung Sik Jung ,  Kyeong Ik Min

发明人： Hee Seok Park ,  Gil Han Park ,  Sang Duk Yoo ,  Young Min Park ,  Hak Hwan Kim ,  Seon Young Myoung ,  Sang Bum Lee ,  Ki Tae Park ,  Myoung Sik Jung ,  Kyeong Ik Min

IPC分类号： H01L29/24 ,  H01L21/36 ,  H01L33/00

CPC分类号： C30B25/04 ,  C30B25/02 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/24

摘要： A method for selectively growing a nitride semiconductor, in which a mask is formed, with an opening formed therein, on a nitride semiconductor layer. A nitride semiconductor crystal is selectively grown on a portion of the nitride semiconductor layer exposed through the opening in the mask, the nitride semiconductor crystal shaped as a hexagonal pyramid and having crystal planes inclined with respect to a top surface of the nitride semiconductor. Here, the nitride semiconductor crystal has at least one intermediate stress-relieving area having crystal planes inclined at a greater angle than those of upper and lower areas of the nitride semiconductor crystal, the intermediate stress-relieving area relieving stress which occurs from continuity in the inclined crystal planes.

摘要翻译： 一种在氮化物半导体层上选择性地生长其中形成掩模的氮化物半导体，其中形成有开口的方法。 氮化物半导体晶体选择性地生长在通过掩模中的开口暴露的氮化物半导体层的一部分上，氮化物半导体晶体形状为六角锥，并具有相对于氮化物半导体的顶表面倾斜的晶面。 这里，氮化物半导体晶体具有至少一个具有比氮化物半导体晶体的上部和下部区域倾斜角度大的晶面的中间应力消除区域，由中间应力消除区域的连续性产生的中间应力消除面积减轻应力 斜晶面。