公开(公告)号：US20100109052A1

公开(公告)日：2010-05-06

申请号：US12608751

申请日：2009-10-29

申请人： Shizuki NAKAJIMA ,  Hiroyuki NAGAI ,  Yuji SHIRAI ,  Hirokazu NAKEJIMA ,  Chushiro KUSANO ,  Yu HASEGAWA ,  Chiko YORITA ,  Yasuo OSONE

发明人： Shizuki NAKAJIMA ,  Hiroyuki NAGAI ,  Yuji SHIRAI ,  Hirokazu NAKEJIMA ,  Chushiro KUSANO ,  Yu HASEGAWA ,  Chiko YORITA ,  Yasuo OSONE

IPC分类号： H01L27/082 ,  H01L27/088 ,  H01L21/8222 ,  H01L29/78

CPC分类号： H01L29/7835 ,  H01L21/823425 ,  H01L21/823475 ,  H01L23/66 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/17 ,  H01L24/28 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L25/16 ,  H01L27/088 ,  H01L29/04 ,  H01L29/0692 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1087 ,  H01L29/41758 ,  H01L29/66659 ,  H01L29/7371 ,  H01L2223/6644 ,  H01L2223/6677 ,  H01L2224/0401 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05171 ,  H01L2224/05553 ,  H01L2224/05644 ,  H01L2224/05666 ,  H01L2224/1134 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/10161 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13064 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1517 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/30111 ,  H05K1/0206 ,  H05K2201/09481 ,  H05K2201/096 ,  H05K2201/10674 ,  H01L2924/00 ,  H01L2924/01028 ,  H01L2924/01032 ,  H01L2924/01083 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/013

摘要： In a semiconductor chip in which LDMOSFET elements for power amplifier circuits used for a power amplifier module are formed, a source bump electrode is disposed on an LDMOSFET formation region in which a plurality of source regions, a plurality of drain regions and a plurality of gate electrodes for the LDMOSFET elements are formed. The source bump electrode is formed on a source pad mainly made of aluminum via a source conductor layer which is thicker than the source pad and mainly made of copper. No resin film is interposed between the source bump electrode and the source conductor layer.

摘要翻译： 在其中形成用于功率放大器模块的功率放大器电路的LDMOSFET元件形成的半导体芯片中，源极突起电极设置在LDMOSFET形成区域中，其中多个源极区域，多个漏极区域和多个栅极 形成用于LDMOSFET元件的电极。 源极突起电极通过源极导体层形成在主要由铝制成的源极焊盘上，该源极导体层比源焊盘厚，主要由铜制成。 在源凸起电极和源极导体层之间不设置树脂膜。