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25 条记录 (耗时 0.025 秒)

    Photoelectric structure and method of manufacturing thereof
    2.
    发明授权
    Photoelectric structure and method of manufacturing thereof 失效
    光电结构及其制造方法

    公开(公告)号：US08080856B2

    公开(公告)日：2011-12-20

    申请号：US12552393

    申请日：2009-09-02

    申请人： Gady Golan ,  Alex Axelevitch ,  Ronen Shavit

    发明人： Gady Golan ,  Alex Axelevitch ,  Ronen Shavit

    IPC分类号： H01L31/102

    CPC分类号： H01L31/022425 ,  H01L31/022433 ,  H01L31/0543 ,  H01L31/0547 ,  H01L31/075 ,  H01L31/105 ,  Y02E10/52 ,  Y02E10/548

    摘要： A photoelectric structure is presented, comprising one or more PiN cells. The PiN cell is formed by an intrinsic semiconductor bulk having front and rear surfaces enclosed between p- and n-type regions extending along side surfaces of said semiconductor bulk. The front and rear surfaces of the intrinsic semiconductor bulk are active surfaces of the PiN cell and said side surfaces of said semiconductor bulk formed with said p- and n-type regions are configured and operable for collecting excess charged carriers generated in said semiconductor bulk in response to collected electromagnetic radiation to which at least one of the active surfaces is exposed during the PiN cell operation.

    摘要翻译： 提出了包括一个或多个PiN单元的光电结构。 PiN单元由本征半导体本体形成，其具有包围在沿着所述半导体体的侧表面延伸的p型区域和n型区域之间的前表面和后表面。 本征半导体本体的前表面和后表面是PiN单元的有源表面，并且所述p型和n型区形成的所述半导体体的所述侧表面被构造和操作用于收集在所述半导体体中产生的过量的电荷载流子 响应于在PiN单元操作期间暴露至少一个活性表面的收集​​的电磁辐射。

    Locking mechanism for intramedullary nails
    4.
    发明申请
    Locking mechanism for intramedullary nails 审中-公开
    髓内钉锁定机制

    公开(公告)号：US20050069397A1

    公开(公告)日：2005-03-31

    申请号：US10502563

    申请日：2003-01-22

    申请人： Ronen Shavit ,  Oren Globerman ,  Mordechay Beyar

    发明人： Ronen Shavit ,  Oren Globerman ,  Mordechay Beyar

    IPC分类号： A61B17/78 ,  F16B15/00

    CPC分类号： A61B17/744

    摘要： Intramedullary nail apparatus comprising: an intramedullary nail having an axis, a proximal end, a distal end, a first hole going through the nail at an angle to the axis, and a second hole going through said nail at the same or a different angle to the axis, with the second hole closer to the proximal end than the first hole; a first screw which goes through the first hole; a second screw which goes through the second hole; and a locking mechanism, accessible from the proximal end of the nail, operative to selectively lock in place the first screw.

    摘要翻译： 髓内钉装置，包括：髓内钉，其具有轴线，近端，远端，与轴线成一定角度穿过指甲的第一孔，和以相同或不同角度穿过所述钉的第二孔， 所述轴线，其中所述第二孔比所述第一孔更靠近所述近端; 穿过第一孔的第一螺钉; 穿过第二孔的第二螺钉; 以及从钉子的近端可接近的锁定机构，可操作以选择性地锁定第一螺钉。

    Liners for medical joint implants with improved wear-resistance
    7.
    发明授权
    Liners for medical joint implants with improved wear-resistance 有权
    具有改善耐磨性的医用关节植入物的衬垫

    公开(公告)号：US09579205B2

    公开(公告)日：2017-02-28

    申请号：US14482431

    申请日：2014-09-10

    申请人： Ronen Shavit

    发明人： Ronen Shavit

    IPC分类号： A61F2/30 ,  A61L27/44

    CPC分类号： A61L27/446 ,  A61F2/30721 ,  A61F2/30767 ,  A61F2/32 ,  A61F2/38 ,  A61F2/40 ,  A61F2/42 ,  A61F2/44 ,  A61F2002/30733 ,  A61F2230/0071 ,  A61L27/443 ,  A61L2400/12 ,  A61L2430/24 ,  C08L23/06

    摘要： A polymeric liner for joint implants includes at least one friction reducing member and at least one body member. The friction reducing member is made of a polymeric matrix which contains a polymeric material and at least one nanotube nanoparticle having a volume concentration of between 5%-99% v/v (volume per volume). The body member is formed of at least a polymeric material. The friction reducing member and the body member are conjoined preferably by compression molding or any other method of coupling such as mold injection, 3D printing, adhesion or any other suitable method can be applied. A method produces the polymeric.

    摘要翻译： 用于接合植入物的聚合物衬里包括至少一个摩擦减小构件和至少一个主体构件。 摩擦减少构件由聚合物基质制成，其包含聚合物材料和体积浓度为5％-99％v / v（体积/体积）的至少一种纳米管纳米颗粒。 主体部件至少由聚合物材料形成。 摩擦减小构件和主体构件优选地通过压缩成型结合，或者可以应用任何其它联接方法，例如注模，3D印刷，粘合或任何其它合适的方法。 一种方法产生聚合物。

    Photoelectric Structure and Method of Manufacturing Thereof
    10.
    发明申请
    Photoelectric Structure and Method of Manufacturing Thereof 失效
    光电结构及其制造方法

    公开(公告)号：US20100052089A1

    公开(公告)日：2010-03-04

    申请号：US12552393

    申请日：2009-09-02

    申请人： Gady GOLAN ,  Alex AXELEVITCH ,  Ronen SHAVIT

    发明人： Gady GOLAN ,  Alex AXELEVITCH ,  Ronen SHAVIT

    IPC分类号： H01L31/105 ,  H01L31/18

    CPC分类号： H01L31/022425 ,  H01L31/022433 ,  H01L31/0543 ,  H01L31/0547 ,  H01L31/075 ,  H01L31/105 ,  Y02E10/52 ,  Y02E10/548

    摘要： A photoelectric structure is presented, comprising one or more PiN cells. The PiN cell is formed by an intrinsic semiconductor bulk having front and rear surfaces enclosed between p- and n-type regions extending along side surfaces of said semiconductor bulk. The front and rear surfaces of the intrinsic semiconductor bulk are active surfaces of the PiN cell and said side surfaces of said semiconductor bulk formed with said p- and n-type regions are configured and operable for collecting excess charged carriers generated in said semiconductor bulk in response to collected electromagnetic radiation to which at least one of the active surfaces is exposed during the PiN cell operation.

    摘要翻译： 提出了包括一个或多个PiN单元的光电结构。 PiN单元由本征半导体本体形成，其具有包围在沿着所述半导体体的侧表面延伸的p型区域和n型区域之间的前表面和后表面。 本征半导体本体的前表面和后表面是PiN单元的有源表面，并且所述p型和n型区形成的所述半导体体的所述侧表面被构造和操作用于收集在所述半导体体中产生的过量的电荷载流子 响应于在PiN单元操作期间暴露至少一个活性表面的收集​​的电磁辐射。