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公开(公告)号：US20110103418A1
公开(公告)日：2011-05-05
申请号：US12913638
申请日：2010-10-27
申请人： Matthew T. Hardy , You-Da Lin , Hiroaki Ohta , Steven P. DenBaars , James S. Speck , Shuji Nakamura , Kathryn M. Kelchner
发明人： Matthew T. Hardy , You-Da Lin , Hiroaki Ohta , Steven P. DenBaars , James S. Speck , Shuji Nakamura , Kathryn M. Kelchner
IPC分类号： H01S5/323 , H01L33/22 , H01L21/302
CPC分类号： H01L33/0045 , B82Y20/00 , H01S5/1082 , H01S5/22 , H01S5/34333
摘要： An optoelectronic device, comprising an active region and a waveguide structure to provide optical confinement of light emitted from the active region; a pair of facets on opposite ends of the device, having opposite surface polarity; and one of the facets which has been roughened by a crystallographic chemical etching process, wherein the device is a nonpolar or semipolar (Ga,In,Al,B)N based device.
摘要翻译： 一种光电子器件，包括有源区和波导结构，以提供从有源区发射的光的光学限制; 在装置的相对端上的一对具有相反表面极性的小面; 和通过结晶化学蚀刻工艺被粗糙化的其中一个方面，其中该器件是基于非极性或半极性（Ga，In，Al，B）N的器件。
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2.发明申请公开(公告)号：US20110170569A1
公开(公告)日：2011-07-14
申请号：US12908478
申请日：2010-10-20
申请人： Anurag Tyagi , Robert M. Farrell , Chia-Yen Huang , Po Shan Hsu , Daniel A. Haeger , Kathryn M. Kelchner , Hiroaki Ohta , Shuji Nakamura , Steven P. DenBaars , James S. Speck
发明人： Anurag Tyagi , Robert M. Farrell , Chia-Yen Huang , Po Shan Hsu , Daniel A. Haeger , Kathryn M. Kelchner , Hiroaki Ohta , Shuji Nakamura , Steven P. DenBaars , James S. Speck
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01S5/0014 , H01S5/06216 , H01S5/2009 , H01S5/3202 , H01S5/3211
摘要： A semipolar {20-21} III-nitride based laser diode employing a cavity with one or more etched facet mirrors. The etched facet mirrors provide an ability to arbitrarily control the orientation and dimensions of the cavity or stripe of the laser diode, thereby enabling control of electrical and optical properties of the laser diode.
摘要翻译： 采用具有一个或多个蚀刻小面镜的空腔的半极性{20-21} III族氮化物基激光二极管。 蚀刻刻面镜提供了任意控制激光二极管的空腔或条纹的取向和尺寸的能力，从而能够控制激光二极管的电学和光学性质。
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3.发明申请ALUMINUM GALLIUM NITRIDE BARRIERS AND SEPARATE CONFINEMENT HETEROSTRUCTURE (SCH) LAYERS FOR SEMIPOLAR PLANE III-NITRIDE SEMICONDUCTOR-BASED LIGHT EMITTING DIODES AND LASER DIODES 有权二氧化氮玻璃氮化物阻挡层和单独配置结构（SCH）层用于半平面三氮化硅半导体发光二极管和激光二极管公开(公告)号：US20110243172A1
公开(公告)日：2011-10-06
申请号：US13080260
申请日：2011-04-05
申请人： You-Da Lin , Hiroaki Ohta , Shuji Nakamura , Steven P. DenBaars , James S. Speck
发明人： You-Da Lin , Hiroaki Ohta , Shuji Nakamura , Steven P. DenBaars , James S. Speck
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/06 , H01L33/16 , H01L33/32 , H01S5/3063 , H01S5/3202 , H01S5/3406 , H01S5/342 , H01S2304/04
摘要： A semipolar plane III-nitride semiconductor-based laser diode or light emitting diode, comprising a semipolar Indium containing multiple quantum wells for emitting light, having Aluminum containing quantum well barriers, wherein the Indium containing multiple quantum well and Aluminum containing barriers are grown in a semipolar orientation on a semipolar plane.
摘要翻译： 一种半极性III族氮化物半导体激光二极管或发光二极管，其包含含有多个用于发光的量子阱的半极性铟，其具有含铝的量子阱屏障，其中含有多量子阱和含铝屏障的铟在 在半极性平面上的半极性取向。
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4.发明授权Aluminum gallium nitride barriers and separate confinement heterostructure (SCH) layers for semipolar plane III-nitride semiconductor-based light emitting diodes and laser diodes 有权氮化镓氮化镓屏障和用于半极性平面III氮化物半导体的发光二极管和激光二极管的分离的限制异质结构（SCH）层公开(公告)号：US08761218B2
公开(公告)日：2014-06-24
申请号：US13080260
申请日：2011-04-05
申请人： You-Da Lin , Hiroaki Ohta , Shuji Nakamura , Steven P. DenBaars , James S. Speck
发明人： You-Da Lin , Hiroaki Ohta , Shuji Nakamura , Steven P. DenBaars , James S. Speck
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/06 , H01L33/16 , H01L33/32 , H01S5/3063 , H01S5/3202 , H01S5/3406 , H01S5/342 , H01S2304/04
摘要： A semipolar plane III-nitride semiconductor-based laser diode or light emitting diode, comprising a semipolar Indium containing multiple quantum wells for emitting light, having Aluminum containing quantum well barriers, wherein the Indium containing multiple quantum well and Aluminum containing barriers are grown in a semipolar orientation on a semipolar plane.
摘要翻译： 一种半极性III族氮化物半导体激光二极管或发光二极管，其包含含有多个用于发光的量子阱的半极性铟，其具有含铝的量子阱屏障，其中含有多量子阱和含铝屏障的铟在 在半极性平面上的半极性取向。
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5.发明申请STRUCTURE FOR IMPROVING THE MIRROR FACET CLEAVING YIELD OF (Ga,Al,In,B)N LASER DIODES GROWN ON NONPOLAR OR SEMIPOLAR (Ga,Al,In,B)N SUBSTRATES 审中-公开（Ga，Al，In，B）N基板上形成的（Ga，Al，In，B）N激光二极管的反射面薄膜的结构公开(公告)号：US20110007766A1
公开(公告)日：2011-01-13
申请号：US12833607
申请日：2010-07-09
申请人： Robert M. Farrell , Matthew T. Hardy , Hiroaki Ohta , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Robert M. Farrell , Matthew T. Hardy , Hiroaki Ohta , Steven P. DenBaars , James S. Speck , Shuji Nakamura
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/16 , H01L33/32 , H01S5/0202 , H01S5/2018 , H01S5/2031
摘要： A structure for improving the mirror facet cleaving yield of (Ga,Al,In,B)N laser diodes grown on nonpolar or semipolar (Ga,Al,In,B)N substrates. The structure comprises a nonpolar or semipolar (Ga,Al,In,B)N laser diode including a waveguide core that provides sufficient optical confinement for the device's operation in the absence of p-type doped aluminum-containing waveguide cladding layers, and one of more n-type doped aluminum-containing layers that can be used to assist with facet cleaving along a particular crystallographic plane.
摘要翻译： 用于改善生长在非极性或半极性（Ga，Al，In，B）N衬底上的（Ga，Al，In，B）N激光二极管的镜面切割产率的结构。 该结构包括非极性或半极性（Ga，Al，In，B）N激光二极管，其包括波导芯，其在不存在p型掺杂的含铝波导覆层的情况下为器件的工作提供足够的光学限制，并且 更多n型掺杂的含铝层，可用于辅助沿着特定结晶平面的切面。
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6.发明授权Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than +/-15 degrees in the C-direction 有权半平面III族氮化物光电子器件在M面平面衬底上，在C方向上具有小于+/- 15度的倾斜度公开(公告)号：US09077151B2
公开(公告)日：2015-07-07
申请号：US13041120
申请日：2011-03-04
申请人： Po Shan Hsu , Kathryn M. Kelchner , Robert M. Farrell , Daniel A. Haeger , Hiroaki Ohta , Anurag Tyagi , Shuji Nakamura , Steven P. DenBaars , S. James Speck
发明人： Po Shan Hsu , Kathryn M. Kelchner , Robert M. Farrell , Daniel A. Haeger , Hiroaki Ohta , Anurag Tyagi , Shuji Nakamura , Steven P. DenBaars , S. James Speck
IPC分类号： H01S5/00 , H01S5/32 , B82Y20/00 , H01L21/02 , H01S5/343 , H01S5/20 , H01S5/22 , H01S5/30 , H01S5/34
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01L31/03044 , H01L31/036 , H01L31/0735 , H01L33/0025 , H01L33/0045 , H01L33/06 , H01L33/16 , H01L33/32 , H01S5/0014 , H01S5/2009 , H01S5/2031 , H01S5/22 , H01S5/3063 , H01S5/3202 , H01S5/3404 , H01S2304/04
摘要： An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15
摘要翻译： 在杂交GaN上生长的光电子器件，其中杂交包括GaN的半极性GaN晶体平面（从GaN的m面）和GaN的c方向偏离x度，其中-15
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7.发明申请SEMI-POLAR III-NITRIDE OPTOELECTRONIC DEVICES ON M-PLANE SUBSTRATES WITH MISCUTS LESS THAN +/-15 DEGREES IN THE C-DIRECTION 有权M-PLANE基板上的半极性III型氮化物光电器件，C型方向的误差小于+/- 15度公开(公告)号：US20110216795A1
公开(公告)日：2011-09-08
申请号：US13041120
申请日：2011-03-04
申请人： Po Shan Hsu , Kathryn M. Kelchner , Robert M. Farrell , Daniel A. Haeger , Hiroaki Ohta , Anurag Tyagi , Shuji Nakamura , Steven P. DenBaars , S. James Speck
发明人： Po Shan Hsu , Kathryn M. Kelchner , Robert M. Farrell , Daniel A. Haeger , Hiroaki Ohta , Anurag Tyagi , Shuji Nakamura , Steven P. DenBaars , S. James Speck
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01L31/03044 , H01L31/036 , H01L31/0735 , H01L33/0025 , H01L33/0045 , H01L33/06 , H01L33/16 , H01L33/32 , H01S5/0014 , H01S5/2009 , H01S5/2031 , H01S5/22 , H01S5/3063 , H01S5/3202 , H01S5/3404 , H01S2304/04
摘要： An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15
摘要翻译： 在杂交GaN上生长的光电子器件，其中杂交包括GaN的半极性GaN晶体平面（从GaN的m面）和GaN的c方向偏离x度，其中-15
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8.发明授权Suppression of inclined defect formation and increase in critical thickness by silicon doping on non-c-plane (Al,Ga,In)N 有权通过硅掺杂在非c面（Al，Ga，In）N上抑制倾斜缺陷形成和临界厚度增加公开(公告)号：US08772758B2
公开(公告)日：2014-07-08
申请号：US13470598
申请日：2012-05-14
IPC分类号： H01L29/06
CPC分类号： H01L21/0254 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02513
摘要： A method for fabricating a III-nitride based semiconductor device, including (a) growing one or more buffer layers on or above a semi-polar or non-polar GaN substrate, wherein the buffer layers are semi-polar or non-polar III-nitride buffer layers; and (b) doping the buffer layers so that a number of crystal defects in III-nitride device layers formed on or above the doped buffer layers is not higher than a number of crystal defects in III-nitride device layers formed on or above one or more undoped buffer layers. The doping can reduce or prevent formation of misfit dislocation lines and additional threading dislocations. The thickness and/or composition of the buffer layers can be such that the buffer layers have a thickness near or greater than their critical thickness for relaxation. In addition, one or more (AlInGaN) or III-nitride device layers can be formed on or above the buffer layers.
摘要翻译： 一种用于制造III族氮化物的半导体器件的方法，包括（a）在半极性或非极性GaN衬底上或之上生长一个或多个缓冲层，其中缓冲层是半极性或非极性III- 氮化物缓冲层; 并且（b）掺杂缓冲层，使得形成在掺杂缓冲层上或上方的III族氮化物器件层中的多个晶体缺陷不高于形成在一个或多个第一或第二晶体管上形成的III族氮化物器件层中的多个晶体缺陷 更多未掺杂的缓冲层。 掺杂可以减少或防止错配位错线的形成和额外的穿线位错。 缓冲层的厚度和/或组成可以使得缓冲层的厚度接近或大于其缓解的临界厚度。 此外，可以在缓冲层上或上方形成一个或多个（AlInGaN）或III族氮化物器件层。
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9.发明申请STRAIN COMPENSATED SHORT-PERIOD SUPERLATTICES ON SEMIPOLAR OR NONPOLAR GAN FOR DEFECT REDUCTION AND STRESS ENGINEERING 审中-公开用于缺陷减少和应力工程的二极管或非燃烧棒的应变补偿短周期监测公开(公告)号：US20120104360A1
公开(公告)日：2012-05-03
申请号：US13284449
申请日：2011-10-28
CPC分类号： H01L33/0075 , B82Y20/00 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01L33/16 , H01L33/32 , H01S5/3201 , H01S5/3216 , H01S5/34333
摘要： An (AlInGaN) based semiconductor device, comprising a first layer that is a semipolar or nonpolar nitride (AlInGaN) layer having a lattice constant that is partially or fully relaxed, deposited on a substrate or a template, wherein there are one or more dislocations at a heterointerface between the first layer and the substrate or the template; one or more strain compensated layers on the first layer, for defect reduction and stress engineering in the device, that is lattice matched to a larger lattice constant of the first layer; and one or more nonpolar or semipolar (AlInGaN) device layers on the strain compensated layers.
摘要翻译： 一种基于（AlInGaN）的半导体器件，其包括第一层，其是具有部分或完全弛豫的晶格常数的半极性或非极性氮化物（AlInGaN）层，沉积在衬底或模板上，其中存在一个或多个位错 在第一层和衬底或模板之间的异质界面; 第一层上的一个或多个应变补偿层，用于器件中的缺陷减少和应力工程，其与第一层的较大晶格常数晶格匹配; 以及应变补偿层上的一个或多个非极性或半极性（AlInGaN）器件层。
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10.发明申请SUPPRESSION OF INCLINED DEFECT FORMATION AND INCREASE IN CRITICAL THICKNESS BY SILICON DOPING ON NON-C-PLANE (Al,Ga,In)N 有权通过在非C平面上的硅掺杂（Al，Ga，In）N来抑制密封形成和增加关键厚度的抑制公开(公告)号：US20120286241A1
公开(公告)日：2012-11-15
申请号：US13470598
申请日：2012-05-14
CPC分类号： H01L21/0254 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02513
摘要： A method for fabricating a III-nitride based semiconductor device, including (a) growing one or more buffer layers on or above a semi-polar or non-polar GaN substrate, wherein the buffer layers are semi-polar or non-polar III-nitride buffer layers; and (b) doping the buffer layers so that a number of crystal defects in III-nitride device layers formed on or above the doped buffer layers is not higher than a number of crystal defects in III-nitride device layers formed on or above one or more undoped buffer layers. The doping can reduce or prevent formation of misfit dislocation lines and additional threading dislocations. The thickness and/or composition of the buffer layers can be such that the buffer layers have a thickness near or greater than their critical thickness for relaxation. In addition, one or more (AlInGaN) or III-nitride device layers can be formed on or above the buffer layers.
摘要翻译： 一种用于制造III族氮化物的半导体器件的方法，包括（a）在半极性或非极性GaN衬底上或之上生长一个或多个缓冲层，其中缓冲层是半极性或非极性III- 氮化物缓冲层; 并且（b）掺杂缓冲层，使得形成在掺杂缓冲层上或上方的III族氮化物器件层中的多个晶体缺陷不高于形成在一个或多个第一或第二晶体管上形成的III族氮化物器件层中的多个晶体缺陷 更多未掺杂的缓冲层。 掺杂可以减少或防止错配位错线的形成和额外的穿线位错。 缓冲层的厚度和/或组成可以使得缓冲层的厚度接近或大于其缓解的临界厚度。 此外，可以在缓冲层上或上方形成一个或多个（AlInGaN）或III族氮化物器件层。
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