公开(公告)号：US08336488B2

公开(公告)日：2012-12-25

申请号：US11961718

申请日：2007-12-20

申请人： Aihua Chen ,  Yijun Liu ,  Jinyuan Chen ,  Lee Luo ,  Tuqiang Ni ,  Gerald Yin ,  Henry Ho

发明人： Aihua Chen ,  Yijun Liu ,  Jinyuan Chen ,  Lee Luo ,  Tuqiang Ni ,  Gerald Yin ,  Henry Ho

IPC分类号： C23C16/505

CPC分类号： C23C16/54 ,  C23C16/36 ,  C23C16/505 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32862

摘要： A plasma chamber is constructed to have a chamber body defining therein a plurality of process stations. A plurality of rotating substrate holders are each situated in one of the process stations and a plurality of in-situ plasma generation regions are each provided above one of the substrate holders. A plurality of quasi-remote plasma generation regions are each provided above a corresponding in-situ plasma generation region and being in gaseous communication with the corresponding in-situ plasma generation region. An RF energy source is coupled to each of the quasi-remote plasma generation regions.

摘要翻译： 等离子体室被构造成具有在其中限定多个处理站的室主体。 多个旋转基板保持器各自位于一个处理站中，并且多个原位等离子体产生区域分别设置在一个基板保持器的上方。 多个准远程等离子体产生区域分别设置在相应的原位等离子体产生区域的上方并与相应的原位等离子体产生区域气态连通。 RF能量源耦合到准远程等离子体产生区域中的每一个。

公开(公告)号：US20090139453A1

公开(公告)日：2009-06-04

申请号：US11961718

申请日：2007-12-20

申请人： AIHUA CHEN ,  Yijun Liu ,  Jinyuan Chen ,  Lee Luo ,  Tuqiang Ni ,  Gerald Yin ,  Henry Ho

发明人： AIHUA CHEN ,  Yijun Liu ,  Jinyuan Chen ,  Lee Luo ,  Tuqiang Ni ,  Gerald Yin ,  Henry Ho

IPC分类号： C23C16/505

CPC分类号： C23C16/54 ,  C23C16/36 ,  C23C16/505 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32862

摘要： A plasma chamber is constructed to have a chamber body defining therein a plurality of process stations. A plurality of rotating substrate holders are each situated in one of the process stations and a plurality of in-situ plasma generation regions are each provided above one of the substrate holders. A plurality of quasi-remote plasma generation regions are each provided above a corresponding in-situ plasma generation region and being in gaseous communication with the corresponding in-situ plasma generation region. An RF energy source is coupled to each of the quasi-remote plasma generation regions.

摘要翻译： 等离子体室被构造成具有在其中限定多个处理站的室主体。 多个旋转基板保持器各自位于一个处理站中，并且多个原位等离子体产生区域分别设置在一个基板保持器的上方。 多个准远程等离子体产生区域分别设置在相应的原位等离子体产生区域的上方并与相应的原位等离子体产生区域气态连通。 RF能量源耦合到准远程等离子体产生区域中的每一个。

公开(公告)号：US08366829B2

公开(公告)日：2013-02-05

申请号：US11772726

申请日：2007-07-02

申请人： Gerald Yin ,  Tuqiang Ni ,  Jinyuan Chen ,  Xueyu Qian

发明人： Gerald Yin ,  Tuqiang Ni ,  Jinyuan Chen ,  Xueyu Qian

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32642 ,  H01J37/32889 ,  H01J37/32899 ,  H01J2237/334 ,  H01L21/67161 ,  H01L21/67173 ,  H01L21/6719

摘要： A tandem processing-zones chamber having plasma isolation and frequency isolation is provided. At least two RF frequencies are fed from the cathode for each processing zones, where one frequency is about ten times higher than the other, so as to provide decoupled reactive ion etch capability. The chamber body is ground all around and in-between the two processing zones. The use of frequency isolation enables feed of multiple RF frequencies from the cathode, without having crosstalk and beat. A plasma confinement ring is also used to prevent plasma crosstalk. A grounded common evacuation path is connected to a single vacuum pump.

公开(公告)号：US20100126667A1

公开(公告)日：2010-05-27

申请号：US12498295

申请日：2009-07-06

申请人： Gerald Yin ,  Jinyuan Chen ,  Tuqiang Ni

发明人： Gerald Yin ,  Jinyuan Chen ,  Tuqiang Ni

IPC分类号： C23F1/08 ,  C23C16/54

CPC分类号： H01L21/68764 ,  C23C16/4405 ,  C23C16/5096 ,  H01J37/32091 ,  H01J2237/2001 ,  H01L21/68771

摘要： A decoupled capacitive CVD reactor is described, which provides improved CVD capabilities, including processing at lower temperatures, performing alternating deposition and etching steps, and performing in situ cleaning of the chamber, without the need for a remote plasma source. Two RF frequencies are coupled to the susceptor, while the anode is grounded. The high frequency RF source is operated so as to control the plasma density, while the low frequency RF source is operated to control species bombardment on the substrate, so as to control the properties of the film being deposited. Additionally, both RF sources may be controlled, together with selection of gasses supplied to the chamber, to operate the chamber either in deposition mode, partial etch mode, etching mode, or cleaning mode.

摘要翻译： 描述了去耦合的电容CVD反应器，其提供改进的CVD能力，包括在较低温度下处理，执行交替沉积和蚀刻步骤，以及执行腔室的原位清洁，而不需要远程等离子体源。 两个RF频率耦合到基座，而阳极接地。 操作高频RF源以控制等离子体密度，同时操作低频RF源以控制基板上的物质轰击，以便控制被沉积的膜的性质。 此外，可以控制两个RF源以及供应到腔室的气体的选择，以沉积模式，局部蚀刻模式，蚀刻模式或清洁模式来操作腔室。

公开(公告)号：US20130008605A1

公开(公告)日：2013-01-10

申请号：US13620654

申请日：2012-09-14

申请人： Gerald Yin ,  Tuqiang Ni ,  Jinyuan Chen ,  Xueyu Qian

发明人： Gerald Yin ,  Tuqiang Ni ,  Jinyuan Chen ,  Xueyu Qian

IPC分类号： H01L21/3065

CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32642 ,  H01J37/32889 ,  H01J37/32899 ,  H01J2237/334 ,  H01L21/67161 ,  H01L21/67173 ,  H01L21/6719

摘要： A tandem processing-zones chamber having plasma isolation and frequency isolation is provided. At least two RF frequencies are fed from the cathode for each processing zones, where one frequency is about ten times higher than the other, so as to provide decoupled reactive ion etch capability. The chamber body is ground all around and in-between the two processing zones. The use of frequency isolation enables feed of multiple RF frequencies from the cathode, without having crosstalk and beat. A plasma confinement ring is also used to prevent plasma crosstalk. A grounded common evacuation path is connected to a single vacuum pump.

摘要翻译： 提供了具有等离子体隔离和频率隔离的串联处理区室。 对于每个处理区域，至少两个RF频率从阴极馈送，其中一个频率比另一个频率高约十倍，以便提供去耦反应离子蚀刻能力。 室体在两个处理区之间周围和两者之间被磨碎。 使用频率隔离可以从阴极馈送多个RF频率，而不会产生串扰和拍频。 等离子体约束环也用于防止等离子体串扰。 接地的公共排气路径连接到单个真空泵。

公开(公告)号：US20080251207A1

公开(公告)日：2008-10-16

申请号：US11739785

申请日：2007-04-25

申请人： Jinyuan Chen ,  Gerald Yin ,  Xueyu Qian ,  Tuqiang Ni ,  Hiroshi Iizuka

发明人： Jinyuan Chen ,  Gerald Yin ,  Xueyu Qian ,  Tuqiang Ni ,  Hiroshi Iizuka

IPC分类号： H01L21/306

CPC分类号： H01J37/32165 ,  H01J37/32082 ,  H01J37/32174 ,  H03H7/46 ,  H03H11/34

摘要： An RF power supplier is provided, that enables multiple-frequency RF power. The system uses N RF signal generators, combines the RF signals, amplify the combined signals, and then separates the amplified signal. The output of the system is then a multiple-frequency RF power. Optionally, the frequencies are switchable, so that one may select which frequencies the system outputs.

摘要翻译： 提供了RF电源，可实现多频RF功率。 该系统使用N个RF信号发生器，组合RF信号，放大组合信号，然后分离放大的信号。 然后系统的输出是多频RF功率。 可选地，频率是可切换的，使得可以选择系统输出的频率。

公开(公告)号：US09208998B2

公开(公告)日：2015-12-08

申请号：US13620654

申请日：2012-09-14

申请人： Gerald Yin ,  Tuqiang Ni ,  Jinyuan Chen ,  Xueyu Qian

发明人： Gerald Yin ,  Tuqiang Ni ,  Jinyuan Chen ,  Xueyu Qian

IPC分类号： H01J37/32 ,  H01L21/67

CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32642 ,  H01J37/32889 ,  H01J37/32899 ,  H01J2237/334 ,  H01L21/67161 ,  H01L21/67173 ,  H01L21/6719

摘要： A tandem processing-zones chamber having plasma isolation and frequency isolation is provided. At least two RF frequencies are fed from the cathode for each processing zones, where one frequency is about ten times higher than the other, so as to provide decoupled reactive ion etch capability. The chamber body is ground all around and in-between the two processing zones. The use of frequency isolation enables feed of multiple RF frequencies from the cathode, without having crosstalk and beat. A plasma confinement ring is also used to prevent plasma crosstalk. A grounded common evacuation path is connected to a single vacuum pump.

摘要翻译： 提供了具有等离子体隔离和频率隔离的串联处理区室。 对于每个处理区域，至少两个RF频率从阴极馈送，其中一个频率比另一个频率高约十倍，以提供去耦反应离子蚀刻能力。 室体在两个处理区之间周围和两者之间被磨碎。 使用频率隔离可以从阴极馈送多个RF频率，而不会产生串扰和拍频。 等离子体约束环也用于防止等离子体串扰。 接地的公共排气路径连接到单个真空泵。

公开(公告)号：US08297225B2

公开(公告)日：2012-10-30

申请号：US12498295

申请日：2009-07-06

申请人： Gerald Yin ,  Jinyuan Chen ,  Tuqiang Ni

发明人： Gerald Yin ,  Jinyuan Chen ,  Tuqiang Ni

IPC分类号： C23C16/54 ,  C23F1/08

CPC分类号： H01L21/68764 ,  C23C16/4405 ,  C23C16/5096 ,  H01J37/32091 ,  H01J2237/2001 ,  H01L21/68771

摘要： A decoupled capacitive CVD reactor is described, which provides improved CVD capabilities, including processing at lower temperatures, performing alternating deposition and etching steps, and performing in situ cleaning of the chamber, without the need for a remote plasma source. Two RF frequencies are coupled to the susceptor, while the anode is grounded. The high frequency RF source is operated so as to control the plasma density, while the low frequency RF source is operated to control species bombardment on the substrate, so as to control the properties of the film being deposited. Additionally, both RF sources may be controlled, together with selection of gasses supplied to the chamber, to operate the chamber either in deposition mode, partial etch mode, etching mode, or cleaning mode.

摘要翻译： 描述了去耦合的电容CVD反应器，其提供改进的CVD能力，包括在较低温度下处理，执行交替沉积和蚀刻步骤，以及执行腔室的原位清洁，而不需要远程等离子体源。 两个RF频率耦合到基座，而阳极接地。 操作高频RF源以控制等离子体密度，同时操作低频RF源以控制基板上的物质轰击，以便控制被沉积的膜的性质。 此外，可以控制两个RF源以及供应到腔室的气体的选择，以沉积模式，局部蚀刻模式，蚀刻模式或清洁模式来操作腔室。

公开(公告)号：US07503996B2

公开(公告)日：2009-03-17

申请号：US11739785

申请日：2007-04-25

申请人： Jinyuan Chen ,  Gerald Yin ,  Xueyu Qian ,  Tuqiang Ni ,  Hiroshi Iizuka

发明人： Jinyuan Chen ,  Gerald Yin ,  Xueyu Qian ,  Tuqiang Ni ,  Hiroshi Iizuka

IPC分类号： C23F1/02

CPC分类号： H01J37/32165 ,  H01J37/32082 ,  H01J37/32174 ,  H03H7/46 ,  H03H11/34

摘要： An RF power supplier is provided, that enables multiple-frequency RF power. The system uses N RF signal generators, combines the RF signals, amplify the combined signals, and then separates the amplified signal. The output of the system is then a multiple-frequency RF power. Optionally, the frequencies are switchable, so that one may select which frequencies the system outputs.

摘要翻译： 提供了RF电源，可实现多频RF功率。 该系统使用N个RF信号发生器，组合RF信号，放大组合信号，然后分离放大的信号。 然后系统的输出是多频RF功率。 可选地，频率是可切换的，使得可以选择系统输出的频率。

公开(公告)号：US07658800B2

公开(公告)日：2010-02-09

申请号：US11602568

申请日：2006-11-20

申请人： AiHua Chen ,  Shulin Wang ,  Henry Ho ,  Gerald Yin ,  Qing Lv ,  Li Fu

发明人： AiHua Chen ,  Shulin Wang ,  Henry Ho ,  Gerald Yin ,  Qing Lv ,  Li Fu

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： C23C16/45565 ,  C23C16/45574

摘要： A semiconductor work piece processing reactor is described and which includes a processing chamber defining a deposition region; a pedestal which supports and moves a semiconductor work piece to be processed within the deposition region of the processing chamber; and a gas distribution assembly mounted within the processing chamber and which defines first and second reactive gas passageways which are separated from each other, and which deliver two reactant gases to a semiconductor work piece which is positioned near the gas distribution assembly.

摘要翻译： 描述了半导体工件处理反应器，其包括限定沉积区域的处理室; 基座，其在所述处理室的所述沉积区域内支撑并移动待处理的半导体工件; 以及气体分配组件，其安装在所述处理室内并且限定彼此分离的第一和第二反应气体通道，并且将两个反应气体输送到位于所述气体分配组件附近的半导体工件。