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    SEMICONDUCTOR DEVICE WITH THROUGH-SUBSTRATE VIA AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE WITH THROUGH-SUBSTRATE VIA
    2.
    发明申请
    SEMICONDUCTOR DEVICE WITH THROUGH-SUBSTRATE VIA AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE WITH THROUGH-SUBSTRATE VIA 有权

    公开(公告)号：US20220059434A1

    公开(公告)日：2022-02-24

    申请号：US17415167

    申请日：2019-12-20

    Applicant: ams AG

    Inventor： Bernhard LOEFFLER ,  Thomas BODNER ,  Joerg SIEGERT

    IPC: H01L23/48 ,  H01L23/522 ,  H01L23/31 ,  H01L23/528 ,  H01L21/768

    Abstract: An intermetal dielectric and metal layers embedded in the intermetal dielectric are arranged on a substrate of semiconductor material. A via hole is formed in the substrate, and a metallization contacting a contact area of one of the metal layers is applied in the via hole. The metallization, the metal layer comprising the contact area and the intermetal dielectric are partially removed at the bottom of the via hole in order to form a hole penetrating the intermetal dielectric and extending the via hole. A continuous passivation is arranged on sidewalls within the via hole and the hole, and the metallization contacts the contact area around the hole. Thus the presence of a thin membrane of layers, which is usually formed at the bottom of a hollow through-substrate via, is avoided.

    METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
    4.
    发明申请
    METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20200243387A1

    公开(公告)日：2020-07-30

    申请号：US16754323

    申请日：2018-10-11

    Applicant: ams AG

    Inventor： Thomas BODNER ,  Stefan JESSENIG ,  Franz SCHRANK

    IPC: H01L21/768 ,  H01L23/48 ,  H01L21/56

    Abstract: A method for manufacturing a semiconductor device comprises the steps of providing a semiconductor body with a main plane of extension, and forming a trench in the semiconductor body from a top side of the semiconductor body in a vertical direction which is perpendicular to the main plane of extension of the semiconductor body. The method further comprises the steps of coating inner walls of the trench with an isolation layer, depositing a metallization layer within the trench, and depositing a passivation layer within the trench such that an inner volume of the trench is free of any material, wherein inner surfaces that are adjacent to the inner volume are treated to be hydrophobic at least in places. Furthermore, a semiconductor device is provided.

    METHOD FOR MANUFACTURING AN OPTICAL SENSOR AND OPTICAL SENSOR
    6.
    发明申请
    METHOD FOR MANUFACTURING AN OPTICAL SENSOR AND OPTICAL SENSOR 审中-公开

    公开(公告)号：US20200313031A1

    公开(公告)日：2020-10-01

    申请号：US16756025

    申请日：2018-10-15

    Applicant: ams AG

    Inventor： Gregor TOSCHKOFF ,  Thomas BODNER ,  Franz SCHRANK ,  Miklos LABODI ,  Joerg SIEGERT ,  Martin SCHREMS

    IPC: H01L31/18 ,  G01J1/04 ,  G01J1/02 ,  H01L31/0216 ,  H01L31/02 ,  H01L31/0203

    Abstract: A method for manufacturing an optical sensor is provided. The method comprises providing an optical sensor arrangement which comprises at least two optical sensor elements on a carrier, where the optical sensor arrangement comprises a light entrance surface at the side of the optical sensor elements facing away from the carrier. The method further comprises forming a trench between two optical sensor elements in a vertical direction which is perpendicular to the main plane of extension of the carrier, where the trench extends from the light entrance surface of the sensor arrangement at least to the carrier. Moreover, the method comprises coating the trench with an opaque material, forming electrical contacts for the at least two optical sensor elements on a back side of the carrier facing away from the optical sensor elements, and forming at least one optical sensor by dicing the optical sensor arrangement along the trench. Each optical sensor comprises an optical sensor element, and the light entrance surface is free of electrical contacts and at least partially free of the opaque material above the optical sensor elements. Furthermore, an optical sensor is provided.

    METHOD OF PRODUCING A REMOVABLE WAFER CONNECTION AND CARRIER FOR WAFER SUPPORT
    7.
    发明申请
    METHOD OF PRODUCING A REMOVABLE WAFER CONNECTION AND CARRIER FOR WAFER SUPPORT 有权
    生产可移动波浪连接的方法和用于波形支持的载波

    公开(公告)号：US20150348817A1

    公开(公告)日：2015-12-03

    申请号：US14654471

    申请日：2013-12-19

    Applicant: AMS AG

    Inventor： Thomas BODNER ,  Joerg SIEGERT ,  Martin SCHREMS

    IPC: H01L21/683

    CPC classification number: H01L21/6835 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  Y10T156/10 ,  Y10T156/1111

    Abstract: A relief structure is formed on a surface of a carrier provided for accommodating a wafer, which is fastened to the carrier by a removable adhesive contacting the carrier. The relief structure, which may be spatially confined to the centre of the carrier, reduces the strength of adhesion between the wafer and the carrier. If the adhesive is appropriately selected and maintains the connection between the wafer and the carrier at elevated temperatures, further process steps can be performed at temperatures of typically 300° C. or more. The subsequent mechanical separation of the adhesive joint is facilitated by the relief structure on the carrier.

    Abstract translation: 浮雕结构形成在用于容纳晶片的载体的表面上，该晶片通过与载体接触的可移除的粘合剂固定到载体上。 可以在空间上限制在载体的中心的浮雕结构降低了晶片和载体之间的粘合强度。 如果适当地选择粘合剂并且在升高的温度下维持晶片和载体之间的连接，则可以在通常为300℃或更高的温度下进行进一步的工艺步骤。 粘合剂接头随后的机械分离由载体上的浮雕结构促进。

    METHOD FOR FABRICATING A PLURALITY OF TIME-OF-FLIGHT SENSOR DEVICES
    9.
    发明申请
    METHOD FOR FABRICATING A PLURALITY OF TIME-OF-FLIGHT SENSOR DEVICES 审中-公开

    公开(公告)号：US20200333442A1

    公开(公告)日：2020-10-22

    申请号：US16754335

    申请日：2018-10-10

    Applicant: ams AG

    Inventor： Harald ETSCHMAIER ,  Thomas BODNER

    IPC: G01S7/481 ,  H01L31/173 ,  G01S17/10 ,  H01L31/0232 ,  H01L31/0203 ,  H01L31/18

    Abstract: A method for fabricating a plurality of Time-of-Flight sensor devices (1) comprises a step of providing a wafer (100) including a plurality of wafer portions (110) for a respective one of the Time-of-Flight sensor devices (1), wherein each of the wafer portions (110) includes a first light detecting area (10) and a second light detecting area (20) and a respective light emitter device (30). The respective light emitter device (30) and the respective first light detecting area (10) is encapsulated by a first volume (40) of a light transparent material (130), and the respective second light detecting area (20) is encapsulated by a second volume (50) of the light transparent material (130). Before singulation of the devices (1), an opaque material (60) is placed on the wafer portions (110) in a space (120) between the respective first and second volume (40, 50) of the light transparent material (130).

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