摘要:
The fabrication of a semiconductor integrated circuit device involves testing using a pushing mechanism that is constructed by forming, over the upper surface of a thin film probe, a reinforcing material having a linear expansion coefficient (thermal expansion coefficient) almost equal to that of a wafer to be tested; forming a groove in the reinforcing material above a contact terminal; placing an elastomer in the groove so that a predetermined amount projects out of the groove; and disposing a pusher and another elastomer to sandwich the pusher between the elastomers. With the use of such a probe, it is possible to improve the throughput of wafer-level electrical testing of a semiconductor integrated circuit.
摘要:
A probe card has first contact terminals electrically connected to the fine-pitch electrodes of a test target; wirings drawn from the first contact terminals; and second contact terminals electrically connected to the wirings, wherein the first contact terminals are formed each using an anisotropically etched hole in a crystalline substrate, and a semiconductor device test method (fabrication method) using the probe card.
摘要:
The fabrication of a semiconductor integrated circuit device involves testing using a pushing mechanism that is constructed by forming, over the upper surface of a thin film probe, a reinforcing material having a linear expansion coefficient (thermal expansion coefficient) almost equal to that of a wafer to be tested; forming a groove in the reinforcing material above a contact terminal; placing an elastomer in the groove so that a predetermined amount projects out of the groove; and disposing a pusher and another elastomer to sandwich the pusher between the elastomers. With the use of such a probe, it is possible to improve the throughput of wafer-level electrical testing of a semiconductor integrated circuit.
摘要:
The fabrication of a semiconductor integrated circuit device involves testing using a pushing mechanism that is constructed by forming, over the upper surface of a thin film probe, a reinforcing material having a linear expansion coefficient (thermal expansion coefficient) almost equal to that of a wafer to be tested; forming a groove in the reinforcing material above a contact terminal; placing an elastomer in the groove so that a predetermined amount projects out of the groove; and disposing a pusher and another elastomer to sandwich the pusher between the elastomers. With the use of such a probe, it is possible to improve the throughput of wafer-level electrical testing of a semiconductor integrated circuit.
摘要:
In a probe memory device, a technique of realizing consistency of high-density recording and high-speed reading/writing is provided. A recording medium is placed to a probe array chip on which a plurality of probes are arranged in such a way as to maintain a constant spacing thereto by adopting a high-stiffness elastic support structure. The recording medium is equipped with a stage scanner that is driven continuously while drawing a constant trajectory on an X-Y plane almost in parallel to a probe array chip plane. The probes are equipped with respective actuators each being driven in a Z direction almost perpendicular to the X-Y plane. Each of the probes is made to write or read by altering a distance between the probe and the recording medium in parallel processing. The X-Y actuator is controlled so that the probe may continue a predetermined cyclic movement. Moreover, a tracking area is provided in a portion of the recording medium, and a trajectory of the probe by actuation is controlled so as to have a fixed geometry.
摘要:
The invention provides an electronic apparatus having a metal core substrate including a metal plate, an insulating layer formed on the metal plate and a conductive layer formed on the insulating layer, and an electronic part, and to which the conductive layer and a terminal of the electronic part are connected. In the electronic apparatus, a member having a high thermal conductivity is arranged so as to be in contact with both of the metal plate and the electronic part. Accordingly, a heat radiating property of the electronic apparatus is increased.
摘要:
Provided is a valuable-metal recovery method for recovering metals from lithium ion batteries using comparatively simple equipment and without using a cumbersome process. In said method, a positive electrode material from lithium ion batteries, containing lithium and a transition metal, is dissolved in an acidic solution, thereby generating lithium ions and ions of the transition metal in the acidic solution. Said acidic solution and a recovery liquid are then made to flow with an anion-permeable membrane interposed therebetween, causing the lithium ions to permeate from the acidic solution to recovery solution. Lithium ions are then recovered from the recovery liquid containing dissolved lithium ions.
摘要:
An actuator using a piezoelectric element is stably operated at high speed. The actuator includes driving units provided to face a carrier stage and moving the carrier stage in an X-axis direction, piezoelectric elements provided to the driving units respectively and expanding and contracting in the X-axis direction, a carrier electrode provided on a surface of the carrier stage on a driving-unit side, and driving electrodes provided on surfaces of the driving units on a carrier stage side and electrostatically adsorbing the carrier electrode. Signals not synchronized with each other are applied to the piezoelectric elements.
摘要:
The invention provides an electronic apparatus having a metal core substrate including a metal plate, an insulating layer formed on the metal plate and a conductive layer formed on the insulating layer, and an electronic part, and to which the conductive layer and a terminal of the electronic part are connected. In the electronic apparatus, a member having a high thermal conductivity is arranged so as to be in contact with both of the metal plate and the electronic part. Accordingly, a heat radiating property of the electronic apparatus is increased.
摘要:
An actuator using a piezoelectric element is stably operated at high speed. The actuator includes driving units provided to face a carrier stage and moving the carrier stage in an X-axis direction, piezoelectric elements provided to the driving units respectively and expanding and contracting in the X-axis direction, a carrier electrode provided on a surface of the carrier stage on a driving-unit side, and driving electrodes provided on surfaces of the driving units on a carrier stage side and electrostatically adsorbing the carrier electrode. Signals not synchronized with each other are applied to the piezoelectric elements.