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11 条记录 (耗时 0.051 秒)

    Method of manufacturing semiconductor components
    2.
    发明授权
    Method of manufacturing semiconductor components 失效
    制造半导体元件的方法

    公开(公告)号：US06372526B1

    公开(公告)日：2002-04-16

    申请号：US09055458

    申请日：1998-04-06

    申请人： Keith W. Bailey ,  Sury N. Darbha ,  Prosanto K. Mukerji ,  Gary R. Lorenzen

    发明人： Keith W. Bailey ,  Sury N. Darbha ,  Prosanto K. Mukerji ,  Gary R. Lorenzen

    IPC分类号： H01L2166

    CPC分类号： H01L22/32 ,  H01L22/20 ,  H01L2924/014

    摘要： A method of manufacturing semiconductor components (200, 400, 700) includes assembling, packaging, and testing the semiconductor components (200, 400, 700) while the semiconductor components (200, 400, 700) are mounted on an adhesive layer (220). The method of can also keep the semiconductor components (200, 400, 700) mounted on the adhesive layer (220) between each of the assembling, packaging, and testing steps.

    摘要翻译： 制造半导体部件（200,400,700）的方法包括在将半导体部件（200,400,700）安装在粘合剂层（220）上的同时组装，封装和测试半导体部件（200,400,700） 。 该方法还可以在组装，包装和测试步骤的每一个之间保持安装在粘合剂层（220）上的半导体部件（200,400,700）。

    Semiconductor encapsulation method
    4.
    发明授权
    Semiconductor encapsulation method 失效
    半导体封装方法

    公开(公告)号：US5930652A

    公开(公告)日：1999-07-27

    申请号：US654364

    申请日：1996-05-28

    申请人： Prosanto K. Mukerji ,  Rajesh Srinivasan

    发明人： Prosanto K. Mukerji ,  Rajesh Srinivasan

    IPC分类号： H01L21/56 ,  H01L21/683 ,  H01L21/30

    CPC分类号： H01L21/6838 ,  H01L21/56 ,  H01L2924/0002

    摘要： An encapsulant (17) is applied to a semiconductor wafer (16). The bottom surface (28) of the wafer (16) is held substantially planar while curing the encapsulant (17). The bottom surface (28) is held against a substantially planar support plate (12) to facilitate holding the wafer (16) substantially planar. A polisher plate (18) is pressed against the encapsulant (17) to assist ensuring that the encapsulant has a substantially smooth surface and substantially uniform thickness.

    摘要翻译： 将密封剂（17）施加到半导体晶片（16）。 晶片（16）的底表面（28）在固化密封剂（17）的同时被保持为基本平坦的。 底表面（28）被保持抵靠基本上平面的支撑板（12），以便于将晶片（16）保持基本平坦。 抛光板（18）被压靠在密封剂（17）上，以帮助确保密封剂具有基本平滑的表面和基本均匀的厚度。

    Polyimide coating having electroless metal plate
    5.
    发明授权
    Polyimide coating having electroless metal plate 失效
    具有无电金属板的聚酰亚胺涂层

    公开(公告)号：US5183692A

    公开(公告)日：1993-02-02

    申请号：US724029

    申请日：1991-07-01

    申请人： Prosanto K. Mukerji ,  Russell Mallen ,  George Demet ,  Harry Fuerhaupter

    发明人： Prosanto K. Mukerji ,  Russell Mallen ,  George Demet ,  Harry Fuerhaupter

    IPC分类号： C23C18/28 ,  H05K1/03 ,  H05K3/18 ,  H05K3/38

    CPC分类号： C23C18/28 ,  H05K1/0346 ,  H05K3/181 ,  H05K3/381

    摘要： A method for producing a coating composed of an electroless metal plate, such as a copper plate, tightly bonded to a polyimide layer comprises a multi-step cure of the polyimide layer carried out in combination with a palladium-catalyzed electroless deposition process. A solution of a polyamic acid compound that is the precursor for the desired polyimide resin in a vaporizable solvent is applied to a substrate and heated preferably to temperature below 250.degree. C., to form a soft-cured polyimide film. The film is immersed in an aqueous palladium-tin colloidal suspension to deposit the colloidal particles thereon, which particles are then activated to form palladium nuclei dspersed on the surface. The soft-cured film is then heated, preferably above about 250.degree. C., to vaporize residual solvent and form a hard-cured polyimide layer having the palladium nuclei dispersed on the surface. The hard-cured layer is immersed in an electroless metal plating solution, whereupon the palladium nuclei catalyze deposition of the metal to form a continuous plate. In one aspect of the method, the metal-clad layer is further heated between about 350.degree. C. and 450.degree. C. to final cure the polyimide. It is found that the plate of the coating formed by this multi-cure method strongly adheres to the polymer layer to permit extended deposition and thereby form a relatively thicker plate without catastrophic separation from the polymer.

    摘要翻译： 用于与由聚酰亚胺层紧密接合的铜板等化学金属板构成的涂层的制造方法包括与钯催化的无电沉积工艺结合进行的多层聚酰亚胺层的固化。 将作为所需聚酰亚胺树脂的前体的聚酰胺酸化合物在可汽化溶剂中的溶液施加到基底上，并优选加热至低于250℃，形成软固化的聚酰亚胺膜。 将膜浸入钯 - 锡胶体悬浮液中以沉积其上的胶体颗粒，然后将该颗粒活化以形成在表面上分散的钯核。 然后将软化固化膜加热，优选高于约250℃，蒸发残余溶剂，并形成具有分散在表面上的钯核的硬固化聚酰亚胺层。 将硬固化层浸渍在无电镀金属溶液中，由此钯核催化金属沉积形成连续板。 在该方法的一个方面，金属包覆层在约350℃至450℃之间进一步加热以最终固化聚酰亚胺。 发现通过这种多固化方法形成的涂层的板强烈地粘附到聚合物层以允许延长的沉积，从而形成相对较厚的板，而没有与聚合物的灾难性分离。

    GaN LED with solderable backside metal
    6.
    发明授权
    GaN LED with solderable backside metal 有权
    具有可焊接背面金属的GaN LED

    公开(公告)号：US07190005B2

    公开(公告)日：2007-03-13

    申请号：US10874104

    申请日：2004-06-22

    申请人： Shawn R. Gibb ,  Robert F. Karlicek ,  Prosanto K. Mukerji ,  Hari S. Venugopalan ,  Ivan Eliashevich

    发明人： Shawn R. Gibb ,  Robert F. Karlicek ,  Prosanto K. Mukerji ,  Hari S. Venugopalan ,  Ivan Eliashevich

    IPC分类号： H01L33/00 ,  H01L21/76

    CPC分类号： H01L33/40 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A light-emitting element (24) is disclosed. A light emitting diode (LED) includes a sapphire substrate (26) having front and back sides (33, 35), and a plurality of semiconductor layers (28, 30, 32) deposited on the front side (33) of the sapphire substrate (26). The semiconductor layers (28, 30, 32) define a light-emitting structure that emits light responsive to an electrical input. A metallization stack (40) includes an adhesion layer (34) deposited on the back side (35) of the sapphire substrate (26), and a solderable layer (38) connected to the adhesion layer (34) such that the solderable layer (38) is secured to the sapphire substrate (26) by the adhesion layer (34). A support structure (42) is provided on which the LED is disposed. A solder bond (44) is arranged between the LED and the support structure (42). The solder bond (44) secures the LED to the support structure (42).

    摘要翻译： 公开了一种发光元件（24）。 发光二极管（LED）包括具有正面和背面（33,35）的蓝宝石衬底（26）和沉积在蓝宝石衬底的前侧（33）上的多个半导体层（28,30,32） （26）。 半导体层（28,30,32）限定响应于电输入而发光的发光结构。 金属化堆叠（40）包括沉积在蓝宝石衬底（26）的背面（35）上的粘合层（34）和连接到粘合层（34）的可焊接层（38），使得可焊层（ 38）通过粘合层（34）固定到蓝宝石衬底（26）。 设置有LED的支撑结构（42）。 在LED和支撑结构（42）之间布置有焊料接合（44）。 焊接接合（44）将LED固定到支撑结构（42）。

    GaN LED with solderable backside metal
    8.
    发明授权
    GaN LED with solderable backside metal 有权
    具有可焊接背面金属的GaN LED

    公开(公告)号：US06787435B2

    公开(公告)日：2004-09-07

    申请号：US10064359

    申请日：2002-07-05

    申请人： Shawn R. Gibb ,  Robert F. Karlicek ,  Prosanto K. Mukerji ,  Hari S. Venugopalan ,  Ivan Eliashevich

    发明人： Shawn R. Gibb ,  Robert F. Karlicek ,  Prosanto K. Mukerji ,  Hari S. Venugopalan ,  Ivan Eliashevich

    IPC分类号： H01L2120

    CPC分类号： H01L33/40 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A light-emitting element (24) is disclosed. A light emitting diode (LED) includes a sapphire substrate (26) having front and back sides (33, 35), and a plurality of semiconductor layers (28, 30, 32) deposited on the front side (33) of the sapphire substrate (26). The semiconductor layers (28, 30, 32) define a light-emitting structure that emits light responsive to an electrical input. A metallization stack (40) includes an adhesion layer (34) deposited on the back side (35) of the sapphire substrate (26), and a solderable layer (38) connected to the adhesion layer (34) such that the solderable layer (38) is secured to the sapphire substrate (26) by the adhesion layer (34). A support structure (42) is provided on which the LED is disposed. A solder bond (44) is arranged between the LED and the support structure (42). The solder bond (44) secures the LED to the support structure (42).

    摘要翻译： 公开了一种发光元件（24）。 发光二极管（LED）包括具有正面和背面（33,35）的蓝宝石衬底（26）和沉积在蓝宝石衬底的前侧（33）上的多个半导体层（28,30,32） （26）。 半导体层（28,30,32）限定响应于电输入而发光的发光结构。 金属化堆叠（40）包括沉积在蓝宝石衬底（26）的背面（35）上的粘合层（34）和连接到粘合层（34）的可焊接层（38），使得可焊层（ 38）通过粘合层（34）固定到蓝宝石衬底（26）。 设置有LED的支撑结构（42）。 在LED和支撑结构（42）之间布置有焊料接合（44）。 焊接接合（44）将LED固定到支撑结构（42）。

    Method of adhesion to a polyimide surface by formation of covalent bonds
    10.
    发明授权
    Method of adhesion to a polyimide surface by formation of covalent bonds 失效
    通过形成共价键与聚酰亚胺表面粘合的方法

    公开(公告)号：US5442240A

    公开(公告)日：1995-08-15

    申请号：US332155

    申请日：1994-10-31

    申请人： Prosanto K. Mukerji

    发明人： Prosanto K. Mukerji

    IPC分类号： H01L21/52 ,  C08J7/12 ,  H01L21/56 ,  H05K1/03 ,  H05K3/38 ,  H01L23/28

    CPC分类号： C08J7/12 ,  H01L21/563 ,  H01L24/29 ,  C08J2379/08 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2924/01019 ,  H01L2924/09701 ,  H05K1/0346 ,  H05K3/381 ,  Y10T428/31721

    摘要： A polyimide surface (18) of a semiconductor device (12) is pretreat the polyimide layer with a hydroxyl amine solution at an elevated temperature to form functional groups that react with an underfill encapsulant (16) to form covalent bonds during a cure cycle between the polyimide layer and the encapsulant material between the semiconductor device and a substrate (10). The hydroxyl amine solution include a reagent such as 2,(2-aminoethoxy) ethanol dissolved in a solvent like N-methyl pyrolidione at 65.degree. C. for sixty seconds. The hydroxyl amine solution may be sprayed onto the polyimide layer, or deposited by vapor deposition. The semiconductor die with the treated polyimide layer is attached to the substrate by DCA methods leaving a gap between the assemblies. The encapsulant is introduced between the semiconductor die and the substrate and cured to form a covalent bond with the polyimide layer and an environmental seal between the assemblies resulting in enhanced adhesion.

    摘要翻译： 半导体器件（12）的聚酰亚胺表面（18）在升高的温度下用羟胺溶液预处理聚酰亚胺层，形成与底层填料密封剂（16）反应形成共价键的官能团， 聚酰亚胺层和半导体器件与衬底（10）之间的密封材料。 羟胺溶液包括在65℃下溶于溶剂如N-甲基吡咯烷酮的二（2-氨基乙氧基）乙醇等试剂，持续六十秒。 羟胺溶液可以喷涂到聚酰亚胺层上，或者通过蒸镀沉积。 具有经处理的聚酰亚胺层的半导体管芯通过DCA方法附着到基板上，在组件之间留下间隙。 将密封剂引入到半导体管芯和衬底之间并固化以与聚酰亚胺层形成共价键，并且在组件之间形成环境密封，从而提高了附着力。