公开(公告)号：US07247889B2

公开(公告)日：2007-07-24

申请号：US11004628

申请日：2004-12-03

申请人： Allen W. Hanson ,  John Claassen Roberts ,  Edwin L. Piner ,  Pradeep Rajagopal

发明人： Allen W. Hanson ,  John Claassen Roberts ,  Edwin L. Piner ,  Pradeep Rajagopal

IPC分类号： H01L31/00 ,  H01L21/28

CPC分类号： H01L29/267 ,  H01L29/2003 ,  H01L29/7787

摘要： III-nitride material structures including silicon substrates, as well as methods associated with the same, are described. Parasitic losses in the structures may be significantly reduced which is reflected in performance improvements. Devices (such as RF devices) formed of structures of the invention may have higher output power, power gain and efficiency, amongst other advantages.

摘要翻译： 描述了包括硅衬底的III族氮化物材料结构以及与其相关的方法。 结构中的寄生损失可能会显着降低，这反映在性能改进中。 由本发明的结构形成的器件（例如RF器件）可以具有更高的输出功率，功率增益和效率等优点。

公开(公告)号：US20090194773A1

公开(公告)日：2009-08-06

申请号：US12025976

申请日：2008-02-05

申请人： Allen W. Hanson ,  Edwin L. Piner

发明人： Allen W. Hanson ,  Edwin L. Piner

IPC分类号： H01L29/15 ,  H01L21/02

CPC分类号： H01L23/3732 ,  H01L21/02389 ,  H01L21/02488 ,  H01L21/02527 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/7787 ,  H01L29/812 ,  H01L2224/48091 ,  H01L2224/48472 ,  H01L2924/00014 ,  H01L2924/00

摘要： Gallium nitride material structures are provided, as well as devices and methods associated with such structures. The structures include a diamond region which may facilitate conduction and removal of heat generated within the gallium nitride material during device operation. The structures described herein may form the basis of a number of semiconductor devices and, in particular, transistors (e.g., FETs).

摘要翻译： 提供了氮化镓材料结构，以及与这种结构相关联的装置和方法。 这些结构包括金刚石区域，其可以在器件操作期间促进在氮化镓材料内产生的热的传导和去除。 本文描述的结构可以形成多个半导体器件，特别是晶体管（例如，FET）的基础。

公开(公告)号：US07135720B2

公开(公告)日：2006-11-14

申请号：US10913297

申请日：2004-08-05

申请人： Walter H. Nagy ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook, Jr. ,  Allen W. Hanson ,  Jerry W. Johnson ,  Kevin J. Linthicum ,  Edwin L. Piner ,  Pradeep Rajagopal ,  John C. Roberts ,  Sameer Singhal ,  Robert J. Therrien ,  Andrei Vescan

发明人： Walter H. Nagy ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook, Jr. ,  Allen W. Hanson ,  Jerry W. Johnson ,  Kevin J. Linthicum ,  Edwin L. Piner ,  Pradeep Rajagopal ,  John C. Roberts ,  Sameer Singhal ,  Robert J. Therrien ,  Andrei Vescan

IPC分类号： H01L31/072

CPC分类号： H01L29/812 ,  H01L29/2003 ,  H01L29/7787

摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

公开(公告)号：US07994540B2

公开(公告)日：2011-08-09

申请号：US12508871

申请日：2009-07-24

申请人： Walter H. Nagy ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook, Jr. ,  Allen W. Hanson ,  Jerry W. Johnson ,  Kevin J. Linthicum ,  Edwin L. Piner ,  Pradeep Rajagopal ,  John C. Roberts ,  Sameer Singhal ,  Robert J. Therrien ,  Andrei Vescan

发明人： Walter H. Nagy ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook, Jr. ,  Allen W. Hanson ,  Jerry W. Johnson ,  Kevin J. Linthicum ,  Edwin L. Piner ,  Pradeep Rajagopal ,  John C. Roberts ,  Sameer Singhal ,  Robert J. Therrien ,  Andrei Vescan

IPC分类号： H01L31/0328

CPC分类号： H01L29/812 ,  H01L29/2003 ,  H01L29/7787

摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

摘要翻译： 提供了氮化镓材料晶体管和与之相关的方法。 晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。 晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。 这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。 晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。 这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。

公开(公告)号：US20100019850A1

公开(公告)日：2010-01-28

申请号：US12508871

申请日：2009-07-24

申请人： Walter H. Nagy ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook, JR. ,  Allen W. Hanson ,  Jerry W. Johnson ,  Kevin J. Linthicum ,  Edwin L. Piner ,  Pradeep Rajagopal ,  John C. Roberts ,  Sameer Singhal ,  Robert J. Therrien ,  Andrei Vescan

发明人： Walter H. Nagy ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook, JR. ,  Allen W. Hanson ,  Jerry W. Johnson ,  Kevin J. Linthicum ,  Edwin L. Piner ,  Pradeep Rajagopal ,  John C. Roberts ,  Sameer Singhal ,  Robert J. Therrien ,  Andrei Vescan

IPC分类号： H03F3/16 ,  H01L29/20

CPC分类号： H01L29/812 ,  H01L29/2003 ,  H01L29/7787

摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

摘要翻译： 提供了氮化镓材料晶体管和与之相关的方法。 晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。 晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。 这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。 晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。 这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。

公开(公告)号：US20080246058A1

公开(公告)日：2008-10-09

申请号：US12059182

申请日：2008-03-31

申请人： Walter H. Nagy ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook ,  Allen W. Hanson ,  Jerry W. Johnson ,  Kevin J. Linthicum ,  Edwin L. Piner ,  Pradeep Rajagopal ,  John C. Roberts ,  Sameer Singhal ,  Robert J. Therrien ,  Andrei Vescan

发明人： Walter H. Nagy ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook ,  Allen W. Hanson ,  Jerry W. Johnson ,  Kevin J. Linthicum ,  Edwin L. Piner ,  Pradeep Rajagopal ,  John C. Roberts ,  Sameer Singhal ,  Robert J. Therrien ,  Andrei Vescan

IPC分类号： H01L29/00

CPC分类号： H01L29/812 ,  H01L29/2003 ,  H01L29/7787

摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

摘要翻译： 提供了氮化镓材料晶体管和与之相关的方法。 晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。 晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。 这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。 晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。 这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。

公开(公告)号：US06617060B2

公开(公告)日：2003-09-09

申请号：US10188814

申请日：2002-07-02

申请人： T. Warren Weeks, Jr. ,  Edwin L. Piner ,  Thomas Gehrke ,  Kevin J. Linthicum

发明人： T. Warren Weeks, Jr. ,  Edwin L. Piner ,  Thomas Gehrke ,  Kevin J. Linthicum

IPC分类号： B32B900

CPC分类号： H01L29/155 ,  C30B23/02 ,  C30B23/025 ,  C30B25/02 ,  C30B25/18 ,  C30B25/183 ,  C30B29/06 ,  C30B29/403 ,  C30B29/406 ,  C30B29/68 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02598 ,  H01L21/0262 ,  H01L29/04 ,  H01L29/045 ,  H01L29/0649 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/225 ,  H01L29/66462 ,  H01L29/7787 ,  H01L29/78 ,  H01L33/0066 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/04 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  Y10T428/24942 ,  Y10T428/26 ,  Y10T428/265

摘要： The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.

公开(公告)号：US20080185616A1

公开(公告)日：2008-08-07

申请号：US12023500

申请日：2008-01-31

申请人： Jerry W. Johnson ,  Edwin L. Piner ,  Kevin J. Linthicum

发明人： Jerry W. Johnson ,  Edwin L. Piner ,  Kevin J. Linthicum

IPC分类号： H01L29/78

CPC分类号： G01N27/129 ,  G01N27/4148 ,  H01L2224/48091 ,  H01L2924/00014

摘要： Semiconductor device-based chemical sensors and methods associated with the same are provided. The sensors include regions that can interact with chemical species being detected. The chemical species may, for example, be a component of a fluid (e.g., gas or liquid). The interaction between the chemical species and a region of the sensor causes a change in a measurable property (e.g., an electrical property) of the device. These changes may be related to the concentration of the chemical species in the medium being characterized.

摘要翻译： 提供了基于半导体器件的化学传感器和与其相关联的方法。 这些传感器包括可以与被检测的化学物质相互作用的区域。 化学物质可以例如是流体（例如气体或液体）的组分。 化学物质和传感器的区域之间的相互作用导致装置的可测量性质（例如，电气性能）的改变。 这些变化可能与所述介质中化学物质的浓度有关。

公开(公告)号：US06727531B1

公开(公告)日：2004-04-27

申请号：US09633598

申请日：2000-08-07

申请人： Joan M. Redwing ,  Edwin L. Piner

发明人： Joan M. Redwing ,  Edwin L. Piner

IPC分类号： H01L313028

CPC分类号： H01L29/7783 ,  H01L29/2003

摘要： A gallium nitride-based HEMT device, comprising a channel layer formed of an InGaN alloy. Such device may comprise an AlGaN/InGaN heterostructure, e.g., in a structure including a GaN layer, an InGaN layer over the GaN layer, and a (doped or undoped) AlGaN layer over the InGaN layer. Alternatively, the HEMT device of the invention may be fabricated as a device which does not comprise any aluminum-containing layer, e.g., a GaN/InGaN HEMT device or an InGaN/InGaN HEMT device.

摘要翻译： 一种基于氮化镓的HEMT器件，包括由InGaN合金形成的沟道层。 这样的器件可以包括AlGaN / InGaN异质结构，例如在包括GaN层，GaN层上的InGaN层和InGaN层上的（掺杂或未掺杂的）AlGaN层的结构中。 或者，本发明的HEMT器件可以制造为不包含任何含铝层的器件，例如GaN / InGaN HEMT器件或InGaN / InGaN HEMT器件。

公开(公告)号：US08748298B2

公开(公告)日：2014-06-10

申请号：US12023451

申请日：2008-01-31

申请人： Edwin L. Piner ,  John C. Roberts ,  Pradeep Rajagopal

发明人： Edwin L. Piner ,  John C. Roberts ,  Pradeep Rajagopal

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L29/7787 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02543 ,  H01L29/2003 ,  H01L29/432

摘要： Semiconductor materials including a gallium nitride material region and methods associated with such structures are provided. The semiconductor structures include a strain-absorbing layer formed within the structure. The strain-absorbing layer may be formed between the substrate (e.g., a silicon substrate) and an overlying layer. It may be preferable for the strain-absorbing layer to be very thin, have an amorphous structure and be formed of a silicon nitride-based material. The strain-absorbing layer may reduce the number of misfit dislocations formed in the overlying layer (e.g., a nitride-based material layer) which limits formation of other types of defects in other overlying layers (e.g., gallium nitride material region), amongst other advantages. Thus, the presence of the strain-absorbing layer may improve the quality of the gallium nitride material region which can lead to improved device performance.

摘要翻译： 提供了包括氮化镓材料区域的半导体材料和与这种结构相关联的方法。 半导体结构包括在该结构内形成的应变吸收层。 应变吸收层可以形成在衬底（例如，硅衬底）和上覆层之间。 应变吸收层非常薄，具有非晶结构并且由氮化硅基材料形成可能是优选的。 应变吸收层可以减少在上层（例如，氮化物基材料层）中形成的失配位错的数量，其限制在其它覆盖层（例如，氮化镓材料区域）中形成其他类型的缺陷，其他 优点。 因此，应变吸收层的存在可以提高氮化镓材料区域的质量，这可以导致改进的器件性能。