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    Protection of a plated through hole from chemical attack
    2.
    发明授权
    Protection of a plated through hole from chemical attack 失效
    保护电镀通孔免受化学侵蚀

    公开(公告)号：US06537608B2

    公开(公告)日：2003-03-25

    申请号：US09752915

    申请日：2001-01-02

    申请人： Thomas R. Miller ,  Kristen A. Stauffer ,  Michael Wozniak

    发明人： Thomas R. Miller ,  Kristen A. Stauffer ,  Michael Wozniak

    IPC分类号： B05D512

    CPC分类号： H05K3/0094 ,  H05K3/385 ,  H05K2201/0959 ,  Y10S428/901 ,  Y10T428/24273 ,  Y10T428/24917 ,  Y10T428/249985

    摘要： A method of forming an electronic structure, including adhesively coupling a plated metallic layer (e.g. a copper layer) of a plated through hole (PTH) to holefill material (e.g., epoxy resin) distributed within the PTH. The adhesive coupling utilizes an adhesion promoter film on the plated metallic layer such that the adhesion promoter film is bonded to the resin. The adhesion promoter film may include a metallic oxide layer such as a layer containing cupric oxide and cuprous oxide, which could be formed from bathing a PTH plated with copper in a solution of sodium chlorite. The adhesion promoter film may alternatively include an organometallic layer such as a layer that includes a chemical complex of metal and an organic corrosion inhibitor. The organometallic layer could be formed from bathing the PTH in a bath of hydrogen peroxide, sulfuric acid, and the organic corrosion inhibitor.

    摘要翻译： 一种形成电子结构的方法，包括将电镀通孔（PTH）的电镀金属层（例如铜层）粘附到分布在PTH内的孔填充材料（例如环氧树脂）。 粘合剂偶联剂在镀金属层上使用粘合促进剂膜，使粘合促进剂膜与树脂结合。 粘合促进剂膜可以包括金属氧化物层，例如含有氧化铜和氧化亚铜的层，其可以通过在亚氯酸钠溶液中洗涤镀铜的PTH来形成。 粘合促进剂膜可以替代地包括有机金属层，例如包含金属和有机腐蚀抑制剂的化学络合物的层。 有机金属层可以通过在过氧化氢，硫酸和有机腐蚀抑制剂的浴中洗涤PTH而形成。

    Protection of a plated through hole from chemical attack
    3.
    发明授权
    Protection of a plated through hole from chemical attack 有权
    保护电镀通孔免受化学侵蚀

    公开(公告)号：US06188027B1

    公开(公告)日：2001-02-13

    申请号：US09345474

    申请日：1999-06-30

    申请人： Thomas R. Miller ,  Kristen A. Stauffer ,  Michael Wozniak

    发明人： Thomas R. Miller ,  Kristen A. Stauffer ,  Michael Wozniak

    IPC分类号： H01K909

    CPC分类号： H05K3/0094 ,  H05K3/385 ,  H05K2201/0959 ,  Y10S428/901 ,  Y10T428/24273 ,  Y10T428/24917 ,  Y10T428/249985

    摘要： An electronic structure, and associated method of formation, in which a plated metallic layer such as a copper layer, of a plated through hole (PTH) is adhesively coupled to holefill material distributed within the PTH. The holefill material includes a resin such as an epoxy and optionally includes a particulate component such as a copper powder. The adhesive coupling is accomplished by forming an adhesion promoter film on the plated metallic layer such that the adhesion promoter film is bonded to the resin. The adhesion promoter film may include a metallic oxide layer such as layer containing cupric oxide and cuprous oxide, which could be formed from bathing the PTH in a solution of sodium chlorite. Application of a reducing solution of dimethylamine borane to the cuprous oxide layer would convert some of the cuprous oxide to cupric oxide in the metallic oxide layer. Another possibility for an adhesion promoter film is an organometallic layer such as a layer that includes a chemical complex of metal and an organic corrosion inhibitor. Useful organic corrosion inhibitors for this purpose include triazoles, tetrazoles, and imidazoles. The organometallic layer could be formed from bathing the PTH in a bath of hydrogen peroxide, sulfuric acid, and an organic corrosion inhibitor.

    摘要翻译： 将电镀通孔（PTH）的电镀金属层（例如铜层）粘合地耦合到分布在PTH内的孔填充材料的电子结构及其相关联的形成方法。 孔填充材料包括诸如环氧树脂的树脂，并且任选地包括诸如铜粉末的颗粒组分。 通过在电镀金属层上形成粘合促进剂膜，使粘合促进剂膜与树脂结合，实现粘接剂的连接。 粘合促进剂膜可以包括金属氧化物层，例如含有氧化铜和氧化亚铜的层，其可以通过在亚氯酸钠溶液中洗涤PTH而形成。 将二甲胺硼烷的还原溶液应用于氧化亚铜层将将一些氧化亚铜转化为金属氧化物层中的氧化铜。 粘合促进剂膜的另一种可能性是有机金属层，例如包含金属和有机缓蚀剂的化学络合物的层。 用于此目的的有用的有机腐蚀抑制剂包括三唑，四唑和咪唑。 可以通过在过氧化氢，硫酸和有机腐蚀抑制剂的浴中洗涤PTH来形成有机金属层。

    Fine pitch circuitization with unfilled plated through holes
    4.
    发明授权
    Fine pitch circuitization with unfilled plated through holes 失效
    精细间距电路与未填充电镀通孔

    公开(公告)号：US06467160B1

    公开(公告)日：2002-10-22

    申请号：US09537960

    申请日：2000-03-28

    申请人： Michael J. Cummings ,  Michael V. Longo ,  Curtis L. Miller ,  Thomas R. Miller ,  Michael Wozniak

    发明人： Michael J. Cummings ,  Michael V. Longo ,  Curtis L. Miller ,  Thomas R. Miller ,  Michael Wozniak

    IPC分类号： H01K310

    CPC分类号： H05K3/427 ,  H05K3/0094 ,  H05K3/064 ,  H05K2201/0959 ,  H05K2203/1394 ,  Y10T29/49128 ,  Y10T29/49165

    摘要： A method of making a circuitized substrate having plated through holes free of filler material is provided. The method includes the steps of providing a dielectric substrate having first and second opposite faces. At least one via hole is formed from one face to the other. A first electrically conductive layer is applied onto the top and bottom faces of the dielectric member and onto the side wall of the via. First layers of photoresist are applied to each layer of conductive material and entering at least partially into the via hole. The first layers of photoresist are selectively exposed and developed to remove all of the photoresist, except that photoresist which is disposed in the via holes. Thereafter, a portion of the faces of the metal coatings on the surfaces of dielectric material and any photoresist remaining in the holes extending above the layers of electrically conductive material are removed to form a planar surface thinner than the thickness of the metal in the through hole. Thereafter, a second layer of photoresist material is applied to both the surfaces of the metal on both faces of the dielectric material and exposed to a desired circuit pattern. Thereafter, the second layers of the photoresist material are developed to reveal the underlying metal which is then etched to form a circuit pattern in the metal layer on both faces. Thereafter, the second layers of the remaining photoresist are stripped and also the photoresist remaining in the hole is stripped, thereby to provide a circuitized substrate with plated through holes having an opening extending from the upper face of the substrate to the lower face of the substrate.

    摘要翻译： 提供了一种制造电路化基板的方法，该基板具有不含填料的电镀通孔。 该方法包括提供具有第一和第二相对面的电介质基板的步骤。 至少一个通孔从一个面到另一个形成。 将第一导电层施加到电介质构件的顶表面和底表面上并通过通孔的侧壁。 将第一层光致抗蚀剂施加到每个导电材料层并且至少部分地进入通孔。 除了设置在通孔中的光致抗蚀剂之外，第一层光致抗蚀剂被选择性地曝光和显影以除去所有光致抗蚀剂。 此后，介电材料表面上的金属涂层表面的一部分和残留在延伸到导电材料层之上的孔中的任何光致抗蚀剂被去除以形成比通孔中的金属厚度更薄的平面 。 此后，将第二层光致抗蚀剂材料施加到电介质材料的两个表面上的金属的两个表面上并暴露于期望的电路图案。 此后，第二层光致抗蚀剂材料被显影以露出下面的金属，然后将其蚀刻以在两面上的金属层中形成电路图案。 此后，残留的光致抗蚀剂的第二层被剥离，并且剥离残留在孔中的光致抗蚀剂，从而为电路化基板提供具有从基板的上表面延伸到基板的下表面的开口的电镀通孔 。