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公开(公告)号：US20100210091A1
公开(公告)日：2010-08-19
申请号：US12769976
申请日：2010-04-29
IPC分类号： H01L21/762 , H01L21/461 , H01L21/22 , H01L21/38 , H01L21/302
CPC分类号： H01L21/26506 , H01L21/263 , H01L21/3242
摘要： A method for producing a semiconductor includes providing a p-doped semiconductor body having a first side and a second side; implanting protons into the semiconductor body via the first side to a target depth of the semiconductor body; bonding the first side of the semiconductor body to a carrier substrate; forming an n-doped zone in the semiconductor body by heating the semiconductor body such that a pn junction arises in the semiconductor body; and removing the second side of the semiconductor body at least as far as a space charge zone spanned at the pn junction.
摘要翻译： 一种制造半导体的方法包括提供具有第一侧和第二侧的p掺杂半导体本体; 通过第一侧将半导体本体中的质子注入半导体本体的目标深度; 将半导体主体的第一侧接合到载体基板; 通过加热所述半导体本体从而在半导体本体中形成pn结，形成半导体本体中的n掺杂区; 以及移除所述半导体本体的所述第二侧至少与在所述pn结处跨过的空间电荷区域一样远。
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公开(公告)号：US08288258B2
公开(公告)日：2012-10-16
申请号：US12769976
申请日：2010-04-29
IPC分类号： H01L21/306
CPC分类号： H01L21/26506 , H01L21/263 , H01L21/3242
摘要： A method for producing a semiconductor includes providing a p-doped semiconductor body having a first side and a second side; implanting protons into the semiconductor body via the first side to a target depth of the semiconductor body; bonding the first side of the semiconductor body to a carrier substrate; forming an n-doped zone in the semiconductor body by heating the semiconductor body such that a pn junction arises in the semiconductor body; and removing the second side of the semiconductor body at least as far as a space charge zone spanned at the pn junction.
摘要翻译： 一种制造半导体的方法包括提供具有第一侧和第二侧的p掺杂半导体本体; 通过第一侧将半导体本体中的质子注入半导体本体的目标深度; 将半导体主体的第一侧接合到载体基板; 通过加热所述半导体本体从而在半导体本体中形成pn结，形成半导体本体中的n掺杂区; 以及移除所述半导体本体的所述第二侧至少与在所述pn结处跨过的空间电荷区域一样远。
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3.发明申请Normally-Off Field Effect Transistor, a Manufacturing Method Therefor and a Method for Programming a Power Field Effect Transistor 审中-公开常关场效应晶体管及其制造方法以及功率场效应晶体管编程方法公开(公告)号：US20120019284A1
公开(公告)日：2012-01-26
申请号：US12843181
申请日：2010-07-26
申请人： Anton Mauder , Helmut Strack , Wolfgang Werner
发明人： Anton Mauder , Helmut Strack , Wolfgang Werner
IPC分类号： H03K19/094 , H01L21/336 , H01L29/792 , H01L29/78
CPC分类号： H01L29/7828 , H01L29/0623 , H01L29/1608 , H01L29/2003 , H01L29/402 , H01L29/408 , H01L29/51 , H01L29/513 , H01L29/66068 , H01L29/66666 , H01L29/7787 , H01L29/7838 , H01L29/788 , H01L29/792
摘要： A normally-off power field-effect transistor semiconductor structure is provided. The structure includes a channel, a source electrode, a gate electrode and trapped charges which arranged between the gate electrode and the channel such that the channel is in an off-state when the source electrode and the gate electrode are on the same electric potential. Further, a method for forming a semiconductor device and a method for programming a power field effect transistor are provided.
摘要翻译： 提供了常关的功率场效应晶体管半导体结构。 该结构包括沟道，源电极，栅电极和被布置在栅电极和沟道之间的俘获电荷，使得当源电极和栅电极处于相同电位时，沟道处于截止状态。 此外，提供了一种用于形成半导体器件的方法和用于编程功率场效应晶体管的方法。
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公开(公告)号：US20090298270A1
公开(公告)日：2009-12-03
申请号：US12474464
申请日：2009-05-29
IPC分类号： H01L21/265
CPC分类号： H01L21/26513 , H01L21/263 , H01L21/26506 , H01L21/3242
摘要： A method for producing a semiconductor is disclosed. One embodiment provides a p-doped semiconductor body having a first side and a second side. An n-doped zone is formed in the semiconductor body by implantation of protons into the semiconductor body via the first side down to a specific depth of the semiconductor body and by subsequent heating at least of the proton-implanted region of the semiconductor body. A pn junction arises in the semiconductor body. The second side of the semiconductor body is removed at least as far as a space charge zone spanned at the pn junction.
摘要翻译： 公开了半导体的制造方法。 一个实施例提供了具有第一侧和第二侧的p掺杂半导体本体。 通过将半导体本体中的质子经由第一侧向下注入到半导体本体的特定深度并且随后至少加热半导体本体的质子注入区域，在半导体本体中形成n掺杂区。 在半导体体中产生pn结。 半导体主体的第二面至少与在pn结处跨过的空间电荷区域一样被去除。
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5.发明授权Power semiconductor component with charge compensation structure and method for the fabrication thereof 有权具有电荷补偿结构的功率半导体元件及其制造方法公开(公告)号：US08263450B2
公开(公告)日：2012-09-11
申请号：US12350776
申请日：2009-01-08
申请人： Stefan Sedlmaier , Hans-Joachim Schulze , Anton Mauder , Helmut Strack , Armin Willmeroth , Frank Pfirsch
发明人： Stefan Sedlmaier , Hans-Joachim Schulze , Anton Mauder , Helmut Strack , Armin Willmeroth , Frank Pfirsch
IPC分类号： H01L21/00
CPC分类号： H01L29/7811 , H01L21/2205 , H01L21/2252 , H01L21/2255 , H01L23/291 , H01L23/298 , H01L29/0634 , H01L29/0661 , H01L29/1095 , H01L29/1604 , H01L29/1608 , H01L29/165 , H01L29/66712 , H01L29/7802 , H01L29/7813 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor component with charge compensation structure has a semiconductor body having a drift path between two electrodes. The drift path has drift zones of a first conduction type, which provide a current path between the electrodes in the drift path, while charge compensation zones of a complementary conduction type constrict the current path of the drift path. For this purpose, the drift path has two alternately arranged, epitaxially grown diffusion zone types, the first drift zone type having monocrystalline semiconductor material on a monocrystalline substrate, and a second drift zone type having monocrystalline semiconductor material in a trench structure, with complementarily doped walls, the complementarily doped walls forming the charge compensation zones.
摘要翻译： 具有电荷补偿结构的半导体部件具有在两个电极之间具有漂移路径的半导体本体。 漂移路径具有第一导电类型的漂移区域，其在漂移路径中的电极之间提供电流路径，而互补导电类型的电荷补偿区域限制漂移路径的电流路径。 为此，漂移路径具有两个交替布置的外延生长的扩散区类型，第一漂移区类型在单晶衬底上具有单晶半导体材料，以及在沟槽结构中具有单晶半导体材料的第二漂移区类型，具有互补掺杂 壁，形成电荷补偿区的互补掺杂壁。
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6.发明申请METHOD FOR TREATING AN OXYGEN-CONTAINING SEMICONDUCTOR WAFER, AND SEMICONDUCTOR COMPONENT 审中-公开用于处理含氧半导体波长的方法和半导体元件公开(公告)号：US20110042791A1
公开(公告)日：2011-02-24
申请号：US12161472
申请日：2007-01-19
IPC分类号： H01L29/08 , H01L21/26 , H01L21/322
CPC分类号： H01L21/26506 , H01L21/263 , H01L21/3221 , H01L21/3225 , H01L29/0873 , H01L29/0878 , H01L29/32 , H01L29/66704 , H01L29/66727 , H01L29/861
摘要： A method for treating an oxygen-containing semiconductor wafer, and semiconductor component. One embodiment provides a first side, a second side opposite the first side. A first semiconductor region adjoins the first side. A second semiconductor region adjoins the second side. The second side of the wafer is irridated such that lattice vacancies arise in the second semiconductor region. A first thermal process is carried out the duration of which is chosen such that oxygen agglomerates form in the second semiconductor region and that lattice vacancies diffuse from the first semiconductor region into the second semiconductor region.
摘要翻译： 一种处理含氧半导体晶片和半导体元件的方法。 一个实施例提供了第一侧，与第一侧相对的第二侧。 第一半导体区域邻接第一侧。 第二半导体区域邻接第二侧。 搅拌晶片的第二面使得在第二半导体区域中出现晶格空位。 进行第一热处理，其持续时间被选择为使得在第二半导体区域中形成氧团聚体，并且晶格空位从第一半导体区扩散到第二半导体区域。
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7.发明申请Capacitor Structure in Trench Structures of Semiconductor Devices and Semiconductor Devices Comprising Capacitor Structures of this Type and Methods for Fabricating the Same 有权包括这种类型的电容器结构的半导体器件和半导体器件的沟槽结构中的电容器结构及其制造方法公开(公告)号：US20100264456A1
公开(公告)日：2010-10-21
申请号：US12827035
申请日：2010-06-30
CPC分类号： H01L29/66181 , H01L27/10861 , H01L28/82
摘要： A capacitor structure in trench structures of a semiconductor device includes conductive regions made of metallic and/or semiconducting materials. The conducting regions are surrounded by a dielectric and form stacked layers in the trench structure of the semiconductor device.
摘要翻译： 半导体器件的沟槽结构中的电容器结构包括由金属和/或半导体材料制成的导电区域。 导电区域被电介质包围，并在半导体器件的沟槽结构中形成叠层。
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公开(公告)号：US07317252B2
公开(公告)日：2008-01-08
申请号：US10686849
申请日：2003-10-16
IPC分类号： H01L23/48
CPC分类号： H01L29/7802 , H01L29/1604 , H01L29/41766 , H01L29/456 , H01L29/7396 , H01L29/7813 , H01L2924/0002 , H01L2924/00
摘要： A contact configuration has an ohmic contact between a metalization layer and a semiconductor body of monocrystalline semiconductor material. An amorphous semiconductor layer is formed between the metalization layer and the monocrystalline semiconductor body. The layer is formed of the same semiconductor material as the body. The contact configuration is either produced by applying amorphous semiconductor material on the semiconductor body (e.g., sputtering, vapor deposition, glow discharge) or by damage formation in the semiconductor body.
摘要翻译： 接触构造在金属化层和单晶半导体材料的半导体本体之间具有欧姆接触。 在金属化层和单晶半导体本体之间形成非晶半导体层。 该层由与本体相同的半导体材料形成。 接触构造是通过在半导体本体上施加非晶半导体材料（例如溅射，气相沉积，辉光放电）或通过半导体本体中的损伤形成来制造的。
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9.发明申请公开(公告)号：US20140001514A1
公开(公告)日：2014-01-02
申请号：US13539944
申请日：2012-07-02
申请人： Hans-Joachim Schulze , Franz Hirler , Anton Mauder , Helmut Strack , Frank Kahlmann , Gerhard Miller
发明人： Hans-Joachim Schulze , Franz Hirler , Anton Mauder , Helmut Strack , Frank Kahlmann , Gerhard Miller
IPC分类号： H01L29/36 , H01L21/225
CPC分类号： H01L29/66348 , H01L21/2205 , H01L21/2658 , H01L29/0619 , H01L29/0634 , H01L29/0638 , H01L29/0878 , H01L29/102 , H01L29/1095 , H01L29/165 , H01L29/167 , H01L29/36 , H01L29/402 , H01L29/404 , H01L29/407 , H01L29/7397 , H01L29/7428 , H01L29/7802 , H01L29/7811 , H01L29/7813 , H01L29/7816 , H01L29/861 , H01L29/872
摘要： A semiconductor device includes a device region. The device region includes at least one device region section including dopant atoms of a first doping type and with a first doping concentration of at least 1E16 cm−3 and dopant atoms of a second doping type and with a second doping concentration of at least 1E16 cm−3.
摘要翻译： 半导体器件包括器件区域。 器件区域包括至少一个器件区域部分，其包括第一掺杂类型的掺杂剂原子和具有至少1E16cm-3的第一掺杂浓度和第二掺杂类型的掺杂剂原子，并且具有至少1E16cm的第二掺杂浓度 -3。
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公开(公告)号：US20120256250A1
公开(公告)日：2012-10-11
申请号：US13082679
申请日：2011-04-08
IPC分类号： H01L27/06 , H01L21/336
CPC分类号： H01L21/823487 , H01L27/0694 , H01L27/1207 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor component includes a sequence of layers, the sequence of layers including a first insulator layer, a first semiconductor layer disposed on the first insulator layer, a second insulator layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the second insulator layer. The semiconductor component also includes a plurality of devices at least partly formed in the first semiconductor layer. A first one of the plurality of devices is a power transistor formed in a first region of the first semiconductor layer and a first region of the second semiconductor layer. The first region of the first and second semiconductor layers are in electrical contact with one another through a first opening in the second insulator layer.
摘要翻译： 半导体部件包括一层层，所述层序列包括第一绝缘体层，设置在第一绝缘体层上的第一半导体层，设置在第一半导体层上的第二绝缘体层，以及设置在第二绝缘体层上的第二半导体层 绝缘体层。 半导体部件还包括至少部分地形成在第一半导体层中的多个器件。 多个器件中的第一个是在第一半导体层的第一区域和第二半导体层的第一区域中形成的功率晶体管。 第一和第二半导体层的第一区域通过第二绝缘体层中的第一开口彼此电接触。
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