摘要:
Disclosed is a method and apparatus to extend TDC resolution to better than 1 ps without incurring a matching and power penalty. Higher resolution can be achieved by segmenting the resolution between a mismatch free re-circulating time-to-digital converter (RTDC) and a stochastic time-to-digital converter (STDC). The disclosed RTDC replicates the same delay element to eliminate mismatch with the required dynamic range (200 ps for a 5 GHz example) and moderate resolution (3-5 ps typical corresponding to 6-7 bits for the 5 GHz case). While the STDC can achieve a resolution of 50 fs but with a range of only 3-5 ps which also corresponds to approximately 6-7 additional bits by exploiting process variations and mismatch to achieve a very fine resolution with limited dynamic range.
摘要:
An inverter-driven resistor-ladder digital-to-analog (DAC) converter includes a resistor-ladder network that comprises a resistor for each bit signal of a multi-bit input signal. Each resistor of the resistor-ladder network comprises an input end and an output end. The input end of each resistor is coupled to a corresponding bit signal of the multi-bit input signal, and the output end of each resistor is coupled to an output node of the resistor-ladder network. An output voltage is generated at the output node that is based on the multi-bit input signal. In one exemplary embodiment, the multi-bit input signal is a sigma-delta (ΣΔ) modulated multi-bit input signal. In another exemplary embodiment, resistance values of the resistors of the resistor-ladder network are related by a binary weighting. In still another exemplary embodiment, resistance values of the resistors of the resistor-ladder network are substantially equal.
摘要:
An inverter-driven resistor-ladder digital-to-analog (DAC) converter includes a resistor-ladder network that comprises a resistor for each bit signal of a multi-bit input signal. Each resistor of the resistor-ladder network comprises an input end and an output end. The input end of each resistor is coupled to a corresponding bit signal of the multi-bit input signal, and the output end of each resistor is coupled to an output node of the resistor-ladder network. An output voltage is generated at the output node that is based on the multi-bit input signal. In one exemplary embodiment, the multi-bit input signal is a sigma-delta (ΣΔ) modulated multi-bit input signal. In another exemplary embodiment, resistance values of the resistors of the resistor-ladder network are related by a binary weighting. In still another exemplary embodiment, resistance values of the resistors of the resistor-ladder network are substantially equal.
摘要:
A re-circulating time-to-digital converter (TDC) can include a triggered reference ring oscillator (TRRO) and a delay module. The triggered reference ring oscillator can, when triggered by a reference signal edge, generate a periodic ring oscillator signal with a ring oscillator period that is a selected ratio of a voltage-controlled oscillator (VCO) period. The delay module can store, in a plurality of latches, samples of a VCO signal docked by the periodic ring oscillator signal. Each latch can generate an output of the sample, and each latch output can represent a time difference polarity between VCO signal and TRRO signal. In another example, the re-circulating TDC can include the triggered reference ring oscillator, a digital frequency lock module, and a TDC post-process module. The digital frequency lock module can generate a ring oscillator control signal, which sets the ring oscillator period for the triggered reference ring oscillator. The TDC post-process module can generate a TDC output, which can be a binary representation of a phase difference between a reference signal and a VCO signal.
摘要:
A re-circulating time-to-digital converter (TDC) can include a triggered reference ring oscillator (TRRO) and a delay module. The triggered reference ring oscillator can, when triggered by a reference signal edge, generate a periodic ring oscillator signal with a ring oscillator period that is a selected ratio of a voltage-controlled oscillator (VCO) period. The delay module can store, in a plurality of latches, samples of a VCO signal docked by the periodic ring oscillator signal. Each latch can generate an output of the sample, and each latch output can represent a time difference polarity between VCO signal and TRRO signal. In another example, the re-circulating TDC can include the triggered reference ring oscillator, a digital frequency lock module, and a TDC post-process module. The digital frequency lock module can generate a ring oscillator control signal, which sets the ring oscillator period for the triggered reference ring oscillator. The TDC post-process module can generate a TDC output, which can be a binary representation of a phase difference between a reference signal and a VCO signal.
摘要:
A semiconductor memory device includes a memory string coupled to a bit line, a page buffer configured to sense a sensing current of the bit line in an erase verification operation or a program verification operation, and a sensing control circuit configured to differently set a level of the sensing current in the erase verification operation and the program verification operation in order to sense the threshold voltage level of a selected memory cell of the memory string.
摘要:
Erase and program methods of a flash memory device including MLCs for increasing the program speed are described. In the erase method, MLCs are pre-programmed so that a voltage range in which threshold voltages of MLCs are distributed can be reduced. Therefore, a fail occurrence ratio can be reduced when erasing MLCs, the threshold voltage distribution of MLCs can be improved and an overall program time can be shortened in a subsequent program operation.
摘要:
The invention relates to recombinant plasmid pDSBCm harboring the gene vapk-repeated region, which gene encodes alkalic protease VapK, a microorganism Vibrio metschnikovii transformed therewith, and method for producing an alkaline protease VapK using the same microorganism.
摘要:
A method of erasing and programming a flash memory device including multi-level cells (MLCs). MLCs of a word line are selected and some of the MLCs are pre-programmed based on whether their individual threshold voltages are included in a first voltage range. The selected MLCs are pre-programmed with a pre-program (first) voltage; and the remaining MLCs are prohibited from pre-programming; then the remaining MLCs connected to the selected word line are programmed by applying a program (second) voltage that gradually rises from the pre-program voltage at a ratio of a step voltage n for the selected line.
摘要:
Erase and program methods of a flash memory device including MLCs for increasing the program speed. In the erase method, MLCs are pre-programmed so that a voltage range in which threshold voltages of MLCs are distributed can be reduced. Therefore, a fail occurrence ratio can be reduced when erasing MLCs, the threshold voltage distribution of MLCs can be improved and an overall program time can be shortened in a subsequent program operation.